摘要:
A package structure includes a substrate, a first die and at least one second die. The substrate includes a first pair of parallel edges and a second pair of parallel edges. The first die is mounted over the substrate. The first die includes a third pair of parallel edges and a fourth pair of parallel edges, wherein the third pair of parallel edges and the fourth pair of parallel edges are not parallel to the first pair of parallel edges and the second pair of parallel edges, respectively. The at least one second die is mounted over the first die.
摘要:
A bonding pad design is disclosed that includes one or more pad groups on a semiconductor device. Each pad group is made up of two or more bonding pads that have an alternating orientation, such that adjacent bonding pads have their bond ball on opposite sides in relation to the adjacent bonding pad.
摘要:
A semiconductor package structure is provided. The structure includes a semiconductor chip having a plurality of interconnect layers formed thereover. A first passivation layer is formed over the plurality of interconnect layers. A stress buffer layer is formed over the first passivation layer. A bonding pad is formed over the stress buffer layer. A second passivation layer is formed over a portion of the bonding pad, the second passivation having at least one opening therein exposing a portion of the bonding pad.
摘要:
Provided is a test structure for testing an unpackaged semiconductor wafer. The test structure includes a force-application component that is coupled to an interconnect structure of the semiconductor wafer. The force-application component is operable to exert a force to the semiconductor wafer. The test structure also includes first and second test portions that are coupled to the interconnect structure. The first and second test portions are operable to measure an electrical performance associated with a predetermined region of the interconnect structure. The first and second test portions are operable to measure the electrical performance while the force is exerted to the semiconductor wafer.
摘要:
A pad structure in a semiconductor wafer for wafer testing is described. The pad structure includes at least two metal pads connected there-between by a plurality of conductive vias in one or more insulation layers. A plurality of contact bars in contact with the bottom-most metal pad extends substantially vertically from the bottom-most metal pad into the substrate. An isolation structure substantially surrounds the plurality of contact bars to isolate the pad structure.
摘要:
An integrated circuit parametric testline providing increased test pattern areas is disclosed. The testline comprises a dielectric layer over a substrate, a plurality of probe pads over the dielectric layer, and a first device under test (DUT) formed in the testline in a space underlying the probe pads. The testline may also include a second DUT, which is formed in a space underlying the probe pads overlying the first DUT in an overlaying configuration. The testline may further include a polygon shaped probe pad structure providing an increased test pattern area between adjacent probe pads.
摘要:
A die includes a metal pad, a passivation layer, and a patterned buffer layer over the passivation layer. The patterned buffer layer includes a plurality of discrete portions separated from each other. An under-bump-metallurgy (UBM) is formed in an opening in the patterned buffer layer and an opening in the passivation layer. A metal bump is formed over and electrically coupled to the UBM.
摘要:
A package structure includes a substrate, a first die and at least one second die. The substrate includes a first pair of parallel edges and a second pair of parallel edges. The first die is mounted over the substrate. The first die includes a third pair of parallel edges and a fourth pair of parallel edges, wherein the third pair of parallel edges and the fourth pair of parallel edges are not parallel to the first pair of parallel edges and the second pair of parallel edges, respectively. The at least one second die is mounted over the first die.
摘要:
An integrated circuit structure includes a semiconductor substrate, and an active device formed at a front surface of the semiconductor substrate. A bond pad is over the front surface of the semiconductor substrate. The bond pad has a first dimension in a first direction parallel to the front surface of the semiconductor substrate. A bump ball is over the bond pad, wherein the bump ball has a diameter in the first direction, and wherein an enclosure of the first dimension and the diameter is greater than about −1 μm.
摘要:
An integrated circuit structure comprising a fuse and a method for forming the same are provided. The integrated circuit structure includes a substrate, an interconnection structure over the substrate, a fuse connected to the interconnection structure, and an anti-reflective coating (ARC) on the fuse. The ARC has an increased thickness and acts as a remaining oxide, and no further remaining passivation layer exists on the ARC.