公开(公告)号：US07960442B2

公开(公告)日：2011-06-14

申请号：US11111343

申请日：2005-04-20

申请人： Jennifer Nam Cha ,  Geraud Jean-Michel Dubois ,  James Lupton Hedrick ,  Ho-Cheol Kim ,  Victor Yee-Way Lee ,  Teddie Peregrino Magbitang ,  Robert Dennis Miller ,  Willi Volksen

发明人： Jennifer Nam Cha ,  Geraud Jean-Michel Dubois ,  James Lupton Hedrick ,  Ho-Cheol Kim ,  Victor Yee-Way Lee ,  Teddie Peregrino Magbitang ,  Robert Dennis Miller ,  Willi Volksen

IPC分类号： C08J9/00

CPC分类号： C08G63/66 ,  C08J9/26 ,  C08K5/5419 ,  C08L67/00 ,  C08L83/04 ,  C08L83/00

摘要： Substantially or roughly spherical micellar structures useful in the formation of nanoporous materials by templating are disclosed. A roughly spherical micellar structure is formed by organization of one or more spatially unsymmetric organic amphiphilic molecules. Each of those molecules comprises a branched moiety and a second moiety. The branched moiety can form part of either the core or the surface of the spherical micellar structure, depending on the polarity of the environment. The roughly spherical micellar structures form in a thermosetting polymer matrix. They are employed in a templating process whereby the amphiphilic molecules are dispersed in the polymer matrix, the matrix is cured, and the porogens are then removed, leaving nanoscale pores.

摘要翻译： 公开了用于通过模板形成纳米多孔材料的基本或大致球形的胶束结构。 通过组织一个或多个空间上不对称的有机两亲分子形成大致球形的胶束结构。 这些分子中的每一个包括支链部分和第二部分。 取决于环境的极性，支化部分可以形成球形胶束结构的芯或表面的一部分。 大致球形的胶束结构在热固性聚合物基体中形成。 它们用于模板化过程，由此将两亲分子分散在聚合物基质中，使基质固化，然后去除孔隙原，留下纳米孔。

公开(公告)号：US20110059299A1

公开(公告)日：2011-03-10

申请号：US12554175

申请日：2009-09-04

申请人： Ho-Cheol Kim ,  Sang-min Park ,  Charles T. Rettner

发明人： Ho-Cheol Kim ,  Sang-min Park ,  Charles T. Rettner

IPC分类号： B32B3/00 ,  B05D3/02 ,  B44C1/22

CPC分类号： H01L29/0657 ,  B81C1/00031 ,  B81C2201/0149 ,  G03F7/0002 ,  Y10T428/24479 ,  Y10T428/24521 ,  Y10T428/2457 ,  Y10T428/24612 ,  Y10T428/24802

摘要： A method of forming a block copolymer pattern comprises providing a substrate comprising a topographic pre-pattern comprising a ridge surface separated by a height, h, greater than 0 nanometers from a trench surface; disposing a block copolymer comprising two or more block components on the topographic pre-pattern to form a layer having a thickness of more than 0 nanometers over the ridge surface and the trench surface; and annealing the layer to form a block copolymer pattern having a periodicity of the topographic pre-pattern, the block copolymer pattern comprising microdomains of self-assembled block copolymer disposed on the ridge surface and the trench surface, wherein the microdomains disposed on the ridge surface have a different orientation compared to the microdomains disposed on the trench surface.

摘要翻译： 形成嵌段共聚物图案的方法包括提供包括地形预图案的基材，所述地貌预图案包括从沟槽表面分开高度h，大于0纳米的脊表面; 在所述地形预图案上设置包含两个或更多个嵌段组分的嵌段共聚物，以在所述脊表面和所述沟槽表面上形成厚度大于0纳米的层; 并退火所述层以形成具有所述地形预图案的周期性的嵌段共聚物图案，所述嵌段共聚物图案包括设置在所述脊表面上的自组装嵌段共聚物的微区域和所述沟槽表面，其中所述微区域设置在所述脊表面上 与设置在沟槽表面上的微区域相比具有不同的取向。

公开(公告)号：US20110037175A1

公开(公告)日：2011-02-17

申请号：US12540759

申请日：2009-08-13

申请人： Sarunya Bangsaruntip ,  Daniel C. Edelstein ,  William D. Hinsberg ,  Ho-Cheol Kim ,  Steven Koester ,  Paul M. Solomon

发明人： Sarunya Bangsaruntip ,  Daniel C. Edelstein ,  William D. Hinsberg ,  Ho-Cheol Kim ,  Steven Koester ,  Paul M. Solomon

IPC分类号： H01L23/48 ,  H05K1/11 ,  B05D5/12 ,  G03F7/20

CPC分类号： H01L21/76816 ,  H01L21/31144 ,  H01L21/76838 ,  H01L21/76897 ,  H01L2924/0002 ,  H01L2924/00

摘要： An interconnection between a sublithographic-pitched structure and a lithographic pitched structure is formed. A plurality of conductive lines having a sublithographic pitch may be lithographically patterned and cut along a line at an angle less than 45 degrees from the lengthwise direction of the plurality of conductive lines. Alternately, a copolymer mixed with homopolymer may be placed into a recessed area and self-aligned to form a plurality of conductive lines having a sublithographic pitch in the constant width region and a lithographic dimension between adjacent lines at a trapezoidal region. Yet alternately, a first plurality of conductive lines with the sublithographic pitch and a second plurality of conductive lines with the lithographic pitch may be formed at the same level or at different.

摘要翻译： 形成了亚光刻间距结构和光刻凸出结构之间的互连。 具有亚光刻间距的多条导线可以被光刻图案化并且沿着与多根导线的长度方向成小于45度的角度的切割。 或者，与均聚物混合的共聚物可以放置在凹陷区域中并自对准以形成在恒定宽度区域具有亚光刻间距的多条导线，以及在梯形区域处的相邻线之间的光刻尺寸。 或者，具有亚光刻间距的第一多个导线和具有光刻间距的第二多个导线可以形成在相同的水平或不同的位置。

公开(公告)号：US07569469B2

公开(公告)日：2009-08-04

申请号：US11499132

申请日：2006-08-03

申请人： Ho-Cheol Kim ,  Robert D. Miller

发明人： Ho-Cheol Kim ,  Robert D. Miller

IPC分类号： H01L21/44

CPC分类号： H01L21/02118 ,  H01L21/02126 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/312 ,  H01L21/3121 ,  H01L21/3122 ,  H01L21/3124 ,  H01L21/3125 ,  H01L21/7682 ,  H01L23/5222 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/09701 ,  Y10S977/70 ,  H01L2924/00

摘要： The present invention relates to dielectric nanostructures useful in semiconductor devices and other electronic devices and methods for manufacturing the dielectric nanostructures. The nanostructures generally comprises an array of isolated pillars positioned on a substrate. The methods of the present invention involve using semiconductor technology to manufacture the nanostructures from a mixture of a crosslinkable dielectric material and an amphiphilic block copolymer.

摘要翻译： 本发明涉及可用于半导体器件和其它电子器件的电介质纳米结构以及用于制造电介质纳米结构的方法。 纳米结构通常包括位于基底上的分离柱的阵列。 本发明的方法涉及使用半导体技术从可交联介电材料和两亲性嵌段共聚物的混合物制造纳米结构。

公开(公告)号：US20090179001A1

公开(公告)日：2009-07-16

申请号：US12013444

申请日：2008-01-12

申请人： Joy Cheng ,  Ho-Cheol Kim ,  Charles T. Rettner ,  Daniel P. Sanders ,  Ratnam Sooriyakumaran ,  Linda Sundberg

发明人： Joy Cheng ,  Ho-Cheol Kim ,  Charles T. Rettner ,  Daniel P. Sanders ,  Ratnam Sooriyakumaran ,  Linda Sundberg

IPC分类号： B32B37/14 ,  B32B38/10

CPC分类号： B05D5/00 ,  B05D7/14 ,  B05D7/52 ,  C08L53/00 ,  C09D125/14 ,  C09D153/00

摘要： Disclosed herein is a method of controlling the orientation of microphase-separated domains in a block copolymer film, comprising forming an orientation control layer comprising an epoxy-containing cycloaliphatic acrylic polymer on a surface of a substrate, irradiating and/or heating the substrate to crosslink the orientation control layer, and forming a block copolymer assembly layer comprising block copolymers which form microphase-separated domains, on a surface of the orientation control layer opposite the substrate. The orientation control layer can be selectively cross-linked to expose regions of the substrate, or the orientation control layer can be patterned without removing the layer, to provide selective patterning on the orientation control layer. In further embodiments, bilayer and trilayer imaging schemes are disclosed.

摘要翻译： 本文公开了一种控制嵌段共聚物膜中微相分离的区域的取向的方法，包括在基材的表面上形成包含含环氧基的脂环族丙烯酸聚合物的取向控制层，照射和/或加热该基材以交联 取向控制层，并且在与衬底相对的取向控制层的表面上形成包含形成微相分离结构域的嵌段共聚物的嵌段共聚物组合层。 取向控制层可以选择性地交联以暴露衬底的区域，或者可以将取向控制层图案化而不去除该层，以在取向控制层上提供选择性图案化。 在另外的实施方案中，公开了双层和三层成像方案。

公开(公告)号：US20090107953A1

公开(公告)日：2009-04-30

申请号：US12057565

申请日：2008-03-28

申请人： Joy Cheng ,  Mark W. Hart ,  Hiroshi Ito ,  Ho-Cheol Kim ,  Robert Miller

发明人： Joy Cheng ,  Mark W. Hart ,  Hiroshi Ito ,  Ho-Cheol Kim ,  Robert Miller

IPC分类号： C23F1/00

CPC分类号： H01L21/0337 ,  B81C1/00031 ,  B81C2201/0149 ,  B81C2201/0198 ,  H01L21/0271 ,  H01L21/0332

摘要： A method for producing surface features and an etch masking method. A combination is provided of a block copolymer and additional material. The block copolymer includes a first block of a first polymer covalently bonded to a second block of a second polymer. The additional material is miscible with the first polymer. A film is formed of the combination directly onto a surface of a first layer. Nanostructures of the additional material self-assemble within the first polymer block. The film of the combination and the first layer are etched. The nanostructures have an etch rate lower than an etch rate of the block copolymer and lower than an etch rate of the first layer. The film is removed and features remain on the surface of the first layer. Also included is an etch masking method where the nanostructures mask portions of the first layer from said etchant.

摘要翻译： 一种用于产生表面特征的方法和蚀刻掩模方法。 提供了一种嵌段共聚物和另外的材料的组合。 嵌段共聚物包括共价键合到第二聚合物的第二嵌段的第一聚合物的第一嵌段。 附加材料与第一聚合物混溶。 膜由直接形成在第一层的表面上。 附加材料的纳米结构在第一聚合物嵌段内自组装。 蚀刻组合和第一层的膜。 纳米结构的蚀刻速率低于嵌段共聚物的蚀刻速率，并且低于第一层的蚀刻速率。 去除膜并且特征保留在第一层的表面上。 还包括蚀刻掩模法，其中纳米结构掩盖了来自所述蚀刻剂的第一层的部分。

公开(公告)号：US07521094B1

公开(公告)日：2009-04-21

申请号：US12013957

申请日：2008-01-14

申请人： Joy Cheng ,  William D. Hinsberg ,  Ho-Cheol Kim ,  Charles T. Rettner ,  Daniel P. Sanders

发明人： Joy Cheng ,  William D. Hinsberg ,  Ho-Cheol Kim ,  Charles T. Rettner ,  Daniel P. Sanders

IPC分类号： B05D3/00

CPC分类号： G03F7/0002 ,  B82Y10/00 ,  B82Y40/00

摘要： Disclosed herein is a method of forming polymer structures comprising applying a solution of a diblock copolymer assembly comprising at least one diblock copolymer that forms lamellae, to a neutral surface of a substrate having a chemical pattern thereon, the chemical pattern comprising alternating pinning and neutral regions that are chemically distinct and which have a chemical pattern spatial frequency given by the number of paired sets of pinning and neutral regions along a given direction on the substrate; and forming domains comprising blocks of the diblock copolymer. The domains form by lateral segregation of the blocks. At least one domain has an affinity for the pinning regions and forms on the pinning region, the domains so formed on the pinning region are aligned with the underlying chemical pattern, and domains that do not form on the pinning region form adjacent to and are aligned with the domains formed on the pinning regions. In this way, a structure comprising repeating sets of domains is formed on the chemical pattern with a spatial frequency given by the number of repeating sets of domains in the given direction, that is at least twice that of the chemical pattern spatial frequency. Methods of forming the chemical patterns, and pattern transfer methods using patterned domains, are also disclosed.

摘要翻译： 本文公开了形成聚合物结构的方法，包括将包含至少一种形成薄片的二嵌段共聚物的二嵌段共聚物组合物的溶液施加到其上具有化学图案的基材的中性表面上，所述化学图案包括交替的钉扎和中性区域 其在化学上是不同的，并且具有由沿着衬底上的给定方向的成套组的钉扎和中性区域的数量给出的化学图案空间频率; 以及形成包含二嵌段共聚物嵌段的畴。 这些区域由块的横向偏析形成。 至少一个结构域对钉扎区域的钉扎区域和形成具有亲和性，因此形成在钉扎区域上的区域与下面的化学图案对准，并且不在钉扎区域上形成的区域形成为邻近并对齐 其中所述域形成在钉扎区域上。 以这种方式，在化学图案上形成包括重复的畴集合的结构，其空间频率由给定方向上的重复域集合的数量给出，即至少是化学图案空间频率的两倍。 还公开了形成化学图案的方法和使用图案域的图案转印方法。

公开(公告)号：US20080311228A1

公开(公告)日：2008-12-18

申请号：US11762350

申请日：2007-06-13

申请人： Ho Cheol Kim ,  Ha Young Lee ,  Ni Na Ha ,  Min Jung Kong ,  Seung Ju Rho ,  Nak Sul Seong ,  Geum Soog Kim ,  Yun Tai Kim ,  Youngmin Bu

发明人： Ho Cheol Kim ,  Ha Young Lee ,  Ni Na Ha ,  Min Jung Kong ,  Seung Ju Rho ,  Nak Sul Seong ,  Geum Soog Kim ,  Yun Tai Kim ,  Youngmin Bu

IPC分类号： A61K36/30 ,  A61K31/22 ,  A61P25/00

CPC分类号： A61K36/30 ,  A61K31/22

摘要： The present invention relates to a pharmaceutical composition for protecting neurons or for preventing and treating ischemic neuronal diseases comprising the extract of Lithospermum erythrorhizon Sieb. Et Zucc extracted with water, low-alcohols or their mixture or acetylshikonin separated therefrom as an effective ingredient. The extract of Lithospermum erythrorhizon Sieb. Et. Zucc or acetylshikonin separated therefrom of the present invention has neuronal protective effect, so that it not only interrupts the development of ischemic neuronal diseases but also is very safe, indicating that the extract or acetylshikonin can be used as a medicinal drug for prevention and treatment of degenerative brain disease caused by neuronal apoptosis such as stroke, apoplexy, dementia, Alzheimer's disease, Parkinson's disease, Huntington's disease, Pick's disease and Creutzfeldt-Jakob disease and further can be developed as functional health food.

摘要翻译： 本发明涉及一种用于保护神经元或预防和治疗缺血性神经元疾病的药物组合物，其包含紫苏红提取物的提取物。 Et Zucc用水，低级醇或其混合物或与其分离的乙酰紫草素作为有效成分提取。 紫草提取物。 等等 本发明分离的Zucc或乙酰基紫草素具有神经元保护作用，不仅中断缺血性神经元疾病的发展，而且非常安全，表明提取物或乙酰草酮可用作预防和治疗的药物 由脑卒中，中风，痴呆，阿尔茨海默病，帕金森氏病，亨廷顿舞蹈病，皮克病和克ut特 - 雅各布病引起的退行性脑病也可作为功能保健食品开发。

公开(公告)号：US07459183B2

公开(公告)日：2008-12-02

申请号：US11190644

申请日：2005-07-27

申请人： Geraud Jean-Michel Dubois ,  James Lupton Hedrick ,  Ho-Cheol Kim ,  Victor Yee-Way Lee ,  Teddie Peregrino Magbitang ,  Robert Dennis Miller ,  Muthumanickam Sankarapandian ,  Linda Karin Sundberg ,  Willi Volksen

发明人： Geraud Jean-Michel Dubois ,  James Lupton Hedrick ,  Ho-Cheol Kim ,  Victor Yee-Way Lee ,  Teddie Peregrino Magbitang ,  Robert Dennis Miller ,  Muthumanickam Sankarapandian ,  Linda Karin Sundberg ,  Willi Volksen

IPC分类号： B05D3/02 ,  B05D3/06

CPC分类号： C08L101/12 ,  H01L21/02118 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/31695 ,  H01L21/76807 ,  H01L21/7682 ,  H01L2221/1047

摘要： A method of forming a structure. The method including: forming a precursor layer on a substarte, the precursor layer including a resin and, polymeric nano-particles dispersed in the resin, and a solvent, each the polymeric nano-particle comprising a multi-arm core polymer and pendent polymers attached to the milti-arm core polymer and pendent polymers attached to the multi-arm core polymer, the multi-arm core polymer immiscible with the resin and the pendent polymers miscuble with the resin; heating the precursor layer to cross-link at least about 90% of the resin thereby converting the pre-baked precursor layer to a dielectric layer; forming trenches in the dielectric layer and filling the trenches with an electrical conductor; heating the dielectric layer to thermally decompose at least acout 99.5% of the polymeric nano-particles into decomposition products and to drive the decomposition products out of the dielectric layer.

摘要翻译： 一种形成结构的方法。 该方法包括：在基体上形成前体层，前体层包括树脂和分散在树脂中的聚合物纳米颗粒和溶剂，每个聚合物纳米颗粒包含多臂核聚合物和附着的悬置聚合物 连接到多臂芯聚合物的多芯聚合物和附着的聚合物，与树脂不混溶的多臂芯聚合物和与该树脂不相容的侧链聚合物; 加热前体层以交联至少约90％的树脂，从而将预烘烤的前体层转化为电介质层; 在电介质层中形成沟槽并用电导体填充沟槽; 加热电介质层以将至少99.5％的聚合物纳米颗粒的热量分解成分解产物并将分解产物驱出电介质层。

公开(公告)号：US20080233323A1

公开(公告)日：2008-09-25

申请号：US11690295

申请日：2007-03-23

申请人： Joy Cheng ,  Ho-Cheol Kim ,  Robert D. Miller

发明人： Joy Cheng ,  Ho-Cheol Kim ,  Robert D. Miller

IPC分类号： B29D22/00 ,  B05D3/06

CPC分类号： B29D22/00 ,  B33Y10/00 ,  B33Y80/00 ,  B81C1/00031 ,  B81C2201/0149 ,  B82Y30/00 ,  C08L53/00 ,  G03F7/0002 ,  Y10S977/70 ,  Y10S977/701 ,  Y10S977/712 ,  Y10S977/788 ,  Y10S977/932 ,  Y10T428/1393 ,  Y10T428/24132 ,  Y10T428/249921 ,  C08L2666/02 ,  C08L2666/24

摘要： A method. A first copolymer is provided. A substrate is provided having an energetically neutral surface layer with at least one trough integrally disposed thereon with sidewalls. A first film of the first copolymer is coated inside the trough. Line-forming microdomains are assembled of the first copolymer forming first self-assembled structures within the first film normal to the sidewalls and parallel to the surface layer. The first and second polymer blocks are removed from the first film and oriented structures remain in the trough normal to the sidewalls and parallel to the surface layer. A second film of a second copolymer is coated inside the trough. Line-forming microdomains are assembled of the second copolymer, and form second self-assembled structures within the second film oriented normal to the oriented structures and parallel to the sidewalls. The third and fourth polymer blocks are removed, and at least one second oriented structure remains.

摘要翻译： 一个方法。 提供第一共聚物。 提供具有能量中性的表面层的基底，其中至少一个槽与其一体地设置有侧壁。 第一共聚物的第一膜涂覆在槽内。 线形成微区由第一共聚物组装，该第一共聚物在垂直于侧壁的第一膜内平行于表面层形成第一自组装结构。 第一和第二聚合物嵌段从第一膜去除，并且取向结构保持在垂直于侧壁并平行于表面层的槽中。 第二共聚物的第二膜涂覆在槽内。 线形成微区由第二共聚物组装，并且在第二膜中形成第二自组装结构，该结构定向成垂直于取向结构并且平行于侧壁。 去除第三和第四聚合物嵌段，并保留至少一个第二取向结构。