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81.发明授权Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition 有权通过金属有机化学气相沉积制造非极性氮化铟镓薄膜，异质结构和器件公开(公告)号：US07504274B2
公开(公告)日：2009-03-17
申请号：US11621479
申请日：2007-01-09
申请人： Arpan Chakraborty , Benjamin A. Haskell , Stacia Keller , James S. Speck , Steven P. DenBaars , Shuji Nakamura , Umesh K. Mishra
发明人： Arpan Chakraborty , Benjamin A. Haskell , Stacia Keller , James S. Speck , Steven P. DenBaars , Shuji Nakamura , Umesh K. Mishra
IPC分类号： H01L21/205
CPC分类号： H01L33/06 , B82Y20/00 , C30B25/02 , C30B29/403 , H01L21/0237 , H01L21/02389 , H01L21/02433 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/02609 , H01L33/0075 , H01S5/0213 , H01S5/3202 , H01S5/34333 , H01S2304/04 , H01S2304/12
摘要： A method for the fabrication of nonpolar indium gallium nitride (InGaN) films as well as nonpolar InGaN-containing device structures using metalorganic chemical vapor deposition (MOVCD). The method is used to fabricate nonpolar InGaN/GaN violet and near-ultraviolet light emitting diodes and laser diodes.
摘要翻译： 制造非极性铟镓氮（InGaN）膜以及使用金属有机化学气相沉积（MOVCD）的非极性含InGaN的器件结构的方法。 该方法用于制造非极性InGaN / GaN紫外线和近紫外发光二极管和激光二极管。
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82.发明授权Growth of reduced dislocation density non-polar gallium nitride by hydride vapor phase epitaxy 有权通过氢化物气相外延生长减少的位错密度非极性氮化镓公开(公告)号：US07220658B2
公开(公告)日：2007-05-22
申请号：US10537644
申请日：2003-07-15
申请人： Benjamin A Haskell , Michael D. Craven , Paul T. Fini , Steven P. DenBaars , James S. Speck , Shuji Nakamura
发明人： Benjamin A Haskell , Michael D. Craven , Paul T. Fini , Steven P. DenBaars , James S. Speck , Shuji Nakamura
IPC分类号： H01L21/20
CPC分类号： C30B29/406 , C30B25/02 , C30B29/403 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02609 , H01L21/0262 , H01L21/02639 , H01L21/02647
摘要： Lateral epitaxial overgrowth (LEO) of non-polar a-plane gallium nitride (GaN) films by hydride vapor phase epitaxy (HVPE) results in significantly reduced defect density.
摘要翻译： 通过氢化物气相外延（HVPE）的非极性a面平面氮化镓（GaN）膜的横向外延生长（LEO）导致显着降低的缺陷密度。
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83.发明授权Limiting strain relaxation in III-nitride hetero-structures by substrate and epitaxial layer patterning 有权通过衬底和外延层图案化限制III族氮化物异质结构中的应变松弛公开(公告)号：US08853669B2
公开(公告)日：2014-10-07
申请号：US13281775
申请日：2011-10-26
IPC分类号： H01L33/16 , H01L33/12 , H01L29/04 , H01L33/00 , B82Y20/00 , H01S5/343 , H01S5/32 , H01L29/778 , H01L29/20
CPC分类号： H01L29/045 , B82Y20/00 , H01L29/2003 , H01L29/7787 , H01L33/0075 , H01L33/16 , H01S5/3201 , H01S5/3202 , H01S5/34333 , H01S2304/12
摘要： A method of fabricating a substrate for a semipolar III-nitride device, comprising patterning and forming one or more mesas on a surface of a semipolar III-nitride substrate or epilayer, thereby forming a patterned surface of the semipolar III-nitride substrate or epilayer including each of the mesas with a dimension l along a direction of a threading dislocation glide, wherein the threading dislocation glide results from a III-nitride layer deposited heteroepitaxially and coherently on a non-patterned surface of the substrate or epilayer.
摘要翻译： 一种制造用于半极性III族氮化物器件的衬底的方法，包括在半极性III族氮化物衬底或外延层的表面上图案化和形成一个或多个台面，从而形成半极性III族氮化物衬底或外延层的图案化表面，包括 沿着穿透位错滑移的方向具有尺寸l的每个台面，其中穿透位错滑动来自在基底或外延层的非图案化表面上异质外延和相干沉积的III族氮化物层。
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84.发明申请公开(公告)号：US20130264540A1
公开(公告)日：2013-10-10
申请号：US13909775
申请日：2013-06-04
申请人： Arpan Chakraborty , Benjamin A. Haskell , Stacia Keller , James S. Speck , Steven P. DenBaars , Shuji Nakamura , Umesh K. Mishra
发明人： Arpan Chakraborty , Benjamin A. Haskell , Stacia Keller , James S. Speck , Steven P. DenBaars , Shuji Nakamura , Umesh K. Mishra
IPC分类号： H01L33/06
CPC分类号： H01L33/06 , B82Y20/00 , C30B25/02 , C30B29/403 , H01L21/0237 , H01L21/02389 , H01L21/02433 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/02609 , H01L33/0075 , H01S5/0213 , H01S5/3202 , H01S5/34333 , H01S2304/04 , H01S2304/12
摘要： A method for the fabrication of nonpolar indium gallium nitride (InGaN) films as well as nonpolar InGaN-containing device structures using metalorganic chemical vapor deposition (MOVCD). The method is used to fabricate nonpolar InGaN/GaN violet and near-ultraviolet light emitting diodes and laser diodes.
摘要翻译： 制造非极性铟镓氮（InGaN）膜以及使用金属有机化学气相沉积（MOVCD）的非极性含InGaN的器件结构的方法。 该方法用于制造非极性InGaN / GaN紫外线和近紫外发光二极管和激光二极管。
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85.发明申请SUPPRESSION OF INCLINED DEFECT FORMATION AND INCREASE IN CRITICAL THICKNESS BY SILICON DOPING ON NON-C-PLANE (Al,Ga,In)N 有权通过在非C平面上的硅掺杂（Al，Ga，In）N来抑制密封形成和增加关键厚度的抑制公开(公告)号：US20120286241A1
公开(公告)日：2012-11-15
申请号：US13470598
申请日：2012-05-14
CPC分类号： H01L21/0254 , H01L21/02389 , H01L21/02433 , H01L21/02458 , H01L21/02513
摘要： A method for fabricating a III-nitride based semiconductor device, including (a) growing one or more buffer layers on or above a semi-polar or non-polar GaN substrate, wherein the buffer layers are semi-polar or non-polar III-nitride buffer layers; and (b) doping the buffer layers so that a number of crystal defects in III-nitride device layers formed on or above the doped buffer layers is not higher than a number of crystal defects in III-nitride device layers formed on or above one or more undoped buffer layers. The doping can reduce or prevent formation of misfit dislocation lines and additional threading dislocations. The thickness and/or composition of the buffer layers can be such that the buffer layers have a thickness near or greater than their critical thickness for relaxation. In addition, one or more (AlInGaN) or III-nitride device layers can be formed on or above the buffer layers.
摘要翻译： 一种用于制造III族氮化物的半导体器件的方法，包括（a）在半极性或非极性GaN衬底上或之上生长一个或多个缓冲层，其中缓冲层是半极性或非极性III- 氮化物缓冲层; 并且（b）掺杂缓冲层，使得形成在掺杂缓冲层上或上方的III族氮化物器件层中的多个晶体缺陷不高于形成在一个或多个第一或第二晶体管上形成的III族氮化物器件层中的多个晶体缺陷 更多未掺杂的缓冲层。 掺杂可以减少或防止错配位错线的形成和额外的穿线位错。 缓冲层的厚度和/或组成可以使得缓冲层的厚度接近或大于其缓解的临界厚度。 此外，可以在缓冲层上或上方形成一个或多个（AlInGaN）或III族氮化物器件层。
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86.发明授权Method for fabrication of semipolar (Al, In, Ga, B)N based light emitting diodes 有权用于制造半极性（Al，In，Ga，B）N型发光二极管的方法公开(公告)号：US08299452B2
公开(公告)日：2012-10-30
申请号：US13405590
申请日：2012-02-27
申请人： Hitoshi Sato , Hirohiko Hirasawa , Roy B. Chung , Steven P. DenBaars , James S. Speck , Shuji Nakamura
发明人： Hitoshi Sato , Hirohiko Hirasawa , Roy B. Chung , Steven P. DenBaars , James S. Speck , Shuji Nakamura
IPC分类号： H01L29/06
摘要： A yellow Light Emitting Diode (LED) with a peak emission wavelength in the range 560-580 nm is disclosed. The LED is grown on one or more III-nitride-based semipolar planes and an active layer of the LED is composed of indium (In) containing single or multi-quantum well structures. The LED quantum wells have a thickness in the range 2-7 nm. A multi-color LED or white LED comprised of at least one semipolar yellow LED is also disclosed.
摘要翻译： 公开了具有560-580nm范围内的峰值发射波长的黄色发光二极管（LED）。 LED在一个或多个III族氮化物基半极平面上生长，并且LED的有源层由包含单量子阱或多量子阱结构的铟（In）组成。 LED量子阱的厚度范围为2-7nm。 还公开了由至少一个半极性黄色LED组成的多色LED或白色LED。
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87.发明授权公开(公告)号：US08203159B2
公开(公告)日：2012-06-19
申请号：US12889787
申请日：2010-09-24
申请人： Hong Zhong , John F. Kaeding , Rajat Sharma , James S. Speck , Steven P. DenBaars , Shuji Nakamura
发明人： Hong Zhong , John F. Kaeding , Rajat Sharma , James S. Speck , Steven P. DenBaars , Shuji Nakamura
IPC分类号： H01L33/00
CPC分类号： H01L31/0236 , C30B25/186 , C30B29/403 , H01L21/02389 , H01L21/0242 , H01L21/02458 , H01L21/02647 , H01L21/02658 , H01L29/2003 , H01L29/778 , H01L31/18 , H01L33/0075 , Y02E10/50
摘要： A method of fabricating an optoelectronic device, comprising growing an active layer of the device on an oblique surface of a suitable material, wherein the oblique surface comprises a facetted surface. The present invention also discloses a method of fabricating the facetted surfaces. One fabrication process comprises growing an epitaxial layer on a suitable material, etching the epitaxial layer through a mask to form the facets having a specific crystal orientation, and depositing one or more active layers on the facets. Another method comprises growing a layer of material using a lateral overgrowth technique to produce a facetted surface, and depositing one or more active layers on the facetted surfaces. The facetted surfaces are typically semipolar planes.
摘要翻译： 一种制造光电器件的方法，包括在合适材料的倾斜表面上生长所述器件的有源层，其中所述倾斜表面包括刻面。 本发明还公开了一种制造分面表面的方法。 一个制造工艺包括在合适的材料上生长外延层，通过掩模蚀刻外延层以形成具有特定晶体取向的刻面，以及在该刻面上沉积一个或多个活性层。 另一种方法包括使用横向过度生长技术生长材料层以产生刻面，以及在刻面上沉积一个或多个活性层。 分面表面通常是半极性平面。
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88.发明申请VICINAL SEMIPOLAR III-NITRIDE SUBSTRATES TO COMPENSATE TILT OF RELAXED HETERO-EPITAXIAL LAYERS 审中-公开VICINAL SEMICOLAR III-NITRIDE SUBSTRATES COMPINATE TILT OF RELAXED HETERO-EPITAXIAL LAYERS公开(公告)号：US20120100650A1
公开(公告)日：2012-04-26
申请号：US13281767
申请日：2011-10-26
CPC分类号： H01L29/2003 , B82Y20/00 , H01L21/02389 , H01L21/02433 , H01L21/0254 , H01L29/045 , H01L33/0075 , H01L33/16 , H01S5/2009 , H01S5/3202 , H01S5/34333
摘要： A method for fabricating a semi-polar III-nitride substrate for semi-polar III-nitride device layers, comprising providing a vicinal surface of the III-nitride substrate, so that growth of relaxed heteroepitaxial III-nitride device layers on the vicinal surface compensates for epilayer tilt of the III-nitride device layers caused by one or more misfit dislocations at one or more heterointerfaces between the device layers.
摘要翻译： 一种制造用于半极性III族氮化物器件层的半极性III族氮化物衬底的方法，包括提供III族氮化物衬底的邻近表面，使得邻近表面上的松弛异质外延III族氮化物器件层的生长补偿 用于由器件层之间的一个或多个异质界面处的一个或多个失配位错引起的III族氮化物器件层的外延层倾斜。
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89.发明授权Planar nonpolar m-plane group III nitride films grown on miscut substrates 有权在miscut衬底上生长的平面非极性m面III族氮化物膜公开(公告)号：US08158497B2
公开(公告)日：2012-04-17
申请号：US12140096
申请日：2008-06-16
申请人： Asako Hirai , Zhongyuan Jia , Makoto Saito , Hisashi Yamada , Kenji Iso , Steven P. DenBaars , Shuji Nakamura , James S. Speck
发明人： Asako Hirai , Zhongyuan Jia , Makoto Saito , Hisashi Yamada , Kenji Iso , Steven P. DenBaars , Shuji Nakamura , James S. Speck
IPC分类号： H01L21/20
CPC分类号： C30B29/406 , C30B23/025 , C30B23/066 , C30B25/18 , C30B25/186 , C30B25/20 , C30B29/403 , C30B29/60 , H01L21/0237 , H01L21/02389 , H01L21/0243 , H01L21/02433 , H01L21/02529 , H01L21/0254 , H01L21/02565 , H01L21/02609 , H01L21/02617 , H01L21/02636 , H01L29/04 , H01L29/1608 , H01L29/2003 , H01L29/26 , H01L31/03044 , H01L31/036 , H01L31/1856 , H01L33/0075 , H01L33/16 , H01L33/32 , H01S5/34333 , Y10T428/24612
摘要： A nonpolar III-nitride film grown on a miscut angle of a substrate, in order to suppress the surface undulations, is provided. The surface morphology of the film is improved with a miscut angle towards an a-axis direction comprising a 0.15° or greater miscut angle towards the a-axis direction and a less than 30° miscut angle towards the a-axis direction.
摘要翻译： 提供了为了抑制表面波动而在衬底的错误角度上生长的非极性III族氮化物膜。 膜的表面形态通过朝向a轴方向的误差角而改进，包括朝向a轴方向的0.15°或更大的误差角和朝向a轴方向的小于30°的倾斜角。
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90.发明申请METHOD FOR INCREASING THE AREA OF NON-POLAR AND SEMI-POLAR NITRIDE SUBSTRATES 有权增加非极性和半极性氮化物衬底区域的方法公开(公告)号：US20120086106A1
公开(公告)日：2012-04-12
申请号：US13327521
申请日：2011-12-15
CPC分类号： C30B33/00 , C30B29/403 , H01L21/02389 , H01L21/02433 , H01L21/0254 , H01L21/02658 , H01L29/2003
摘要： A method for fabricating a high quality freestanding nonpolar and semipolar nitride substrate with increased surface area, comprising stacking multiple films by growing the films one on top of each other with different and non-orthogonal growth directions.
摘要翻译： 一种用于制造具有增加的表面积的高质量独立非极性和半极性氮化物衬底的方法，包括通过用不同的和非正交的生长方向将膜形成在一个层叠上来堆叠多个膜。
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