公开(公告)号：US06526910B2

公开(公告)日：2003-03-04

申请号：US09727440

申请日：2000-12-04

申请人： Takahiro Yajima ,  Masahiro Kanai ,  Takeshi Shishido

发明人： Takahiro Yajima ,  Masahiro Kanai ,  Takeshi Shishido

IPC分类号： C23C1600

CPC分类号： H01J37/32009 ,  C23C16/5096 ,  C23C16/545

摘要： A film-forming apparatus by means of plasma CVD, comprising at least a vacuum chamber, a power application electrode for introducing a discharging power into said vacuum chamber, and a raw material gas supply means for supplying a film-forming raw material gas into said vacuum chamber, said power application electrode being arranged in said vacuum chamber so as to oppose to a substrate arranged in said vacuum chamber, characterized in that said power application electrode has a reinforcing member or said power application electrode comprises a power application electrode with no reinforcing member which has a thickness which is greater than a distance between said substrate and said power application electrode. A film-forming method using said film-forming apparatus.

公开(公告)号：US06273955B1

公开(公告)日：2001-08-14

申请号：US08704138

申请日：1996-08-28

申请人： Takehito Yoshino ,  Hiroshi Echizen ,  Masahiro Kanai ,  Hirokazu Otoshi ,  Atsushi Yasuno ,  Kohei Yoshida ,  Koichiro Moriyama ,  Masatoshi Tanaka

发明人： Takehito Yoshino ,  Hiroshi Echizen ,  Masahiro Kanai ,  Hirokazu Otoshi ,  Atsushi Yasuno ,  Kohei Yoshida ,  Koichiro Moriyama ,  Masatoshi Tanaka

IPC分类号： C23C1600

CPC分类号： C23C16/545 ,  C23C16/24 ,  C23C16/4401 ,  C23C16/511 ,  H01L31/202 ,  H01L31/204 ,  H01L31/206 ,  Y02E10/50 ,  Y02P70/521

摘要： A film forming apparatus for forming a plurality of films on a substrate through a continuous process, comprising a plurality of vacuum chambers in communication to each other via connection, at least vacuum chamber having internally a treatment detachable from the vacuum chamber for fulfilling a predetermined treatment on the substrate.

摘要翻译： 一种用于通过连续工艺在基板上形成多个膜的成膜装置，包括通过连接彼此连通的多个真空室，至少具有可从真空室中分离的处理的真空室，用于实现预定处理 在基板上。

公开(公告)号：US5391232A

公开(公告)日：1995-02-21

申请号：US73976

申请日：1993-06-08

申请人： Masahiro Kanai ,  Masaaki Hirooka ,  Junichi Hanna ,  Isamu Shimizu ,  Eiji Takeuchi

发明人： Masahiro Kanai ,  Masaaki Hirooka ,  Junichi Hanna ,  Isamu Shimizu ,  Eiji Takeuchi

IPC分类号： C23C16/44 ,  C23C16/455 ,  H01L31/20 ,  C23C16/00

CPC分类号： C23C16/45568 ,  C23C16/455 ,  C23C16/45561 ,  C23C16/45576 ,  H01L31/202 ,  Y02E10/50

摘要： There is described a device for forming a deposited film on a substrate in a vacuum chamber through utilization of reaction between a gasifiable starting material for formation of a deposited film and a gaseous halogenic oxidizing agent having the property of oxidization action for the gasifiable starting material which has a gas introducing means comprising a pipe for introducing said gasifiable starting material and a pipe for introducing said gaseous halogenic oxidizing agent where the pipes are arranged in a multi-concentric structure and at least one of the pipes except the outermost pipe is constituted of a porous pipe or has a hole opened through the wall thereof and the outermost pipe has at least one opening oriented toward the substrate.

摘要翻译： 描述了通过利用用于形成沉积膜的可气化起始材料与具有可气化起始材料的氧化作用性质的气态卤素氧化剂之间的反应在真空室中在基板上形成沉积膜的装置， 具有气体引入装置，包括用于引入所述可气化起始材料的管道和用于引入所述气态卤素氧化剂的管道，其中所述管道以多中心结构布置，并且除了最外管道之外的至少一个管道由 多孔管或具有穿过其壁开口的孔，并且最外管具有朝向基板的至少一个开口。

公开(公告)号：US5178905A

公开(公告)日：1993-01-12

申请号：US882238

申请日：1992-05-08

申请人： Masahiro Kanai ,  Atsushi Yamagami

发明人： Masahiro Kanai ,  Atsushi Yamagami

IPC分类号： C23C16/22 ,  C23C16/24 ,  C23C16/26 ,  C23C16/28 ,  C23C16/32 ,  C23C16/452 ,  C23C16/513 ,  H01L21/205 ,  H01L31/20

CPC分类号： H01L21/02422 ,  C23C16/22 ,  C23C16/24 ,  C23C16/26 ,  C23C16/28 ,  C23C16/325 ,  C23C16/452 ,  C23C16/513 ,  H01L21/02425 ,  H01L21/0245 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L31/202 ,  H01L31/204 ,  Y02E10/50 ,  Y02P70/521

摘要： A process for forming a functional deposited film which comprises: introducing a precursor composed mainly of Group IV elements to be constituents for a deposited film to be formed into a substantially enclosed film-forming space being kept at 0.1 to 50 mTorr into which hydrogen gas plasma is drawn in a sheet-like state and a substrate is positioned parallel to said sheet-like hydrogen gas plasma, and exhausting the gases in the film-forming space in the direction perpendicular to the sheet-like hydrogen gas plasma and the substrate, said precursor being generated in an precursor generation space situated separately from said film-forming space, said sheet-like hydrogen gas plasma being formed such that a distance (L) of 5 to 50 mm is established between the boundary thereof and the surface of the substrate, said precursor being introduced through gas feed means positioned substantially in said distance (L).

摘要翻译： 一种形成功能沉积膜的方法，包括：将主要由IV族元素组成的前体引入成为沉积膜的成分，以形成基本上封闭的成膜空间，保持在0.1至50mTorr，氢气等离子体 被拉伸成片状状态，并且将基板平行于所述片状氢气等离子体定位，并且在垂直于片状氢气等离子体和基板的方向上排出成膜空间中的气体，所述 在与所述成膜空间分开设置的前体产生空间中产生前体，所述片状氢气等离子体形成为在其边界与基板表面之间建立5〜50mm的距离（L） 所述前体通过基本上位于所述距离（L）中的气体供给装置引入。

公开(公告)号：US5038713A

公开(公告)日：1991-08-13

申请号：US354856

申请日：1989-05-22

申请人： Soichiro Kawakami ,  Masahiro Kanai ,  Takayoshi Arai ,  Tsutomu Murakami

发明人： Soichiro Kawakami ,  Masahiro Kanai ,  Takayoshi Arai ,  Tsutomu Murakami

IPC分类号： B01J19/08 ,  C23C16/27 ,  C23C16/50 ,  C23C16/511 ,  C23F4/00 ,  C30B29/04 ,  H01J37/32 ,  H01L21/205 ,  H01L21/31 ,  H05H1/46

CPC分类号： H01J37/32357 ,  H05H1/46

摘要： A microwave plasma treating apparatus comprising a vacuum vessel, a device for introducing a microwave to the inside of the vacuum vessel by way of a microwave transmission circuit, a device for supplying a starting gas to the inside of the vacuum vessel, a device for evacuating the inside of the vacuum vessel, and a specimen holder for maintaining a specimen substrate to the inside of the vacuum vessel, wherein a cavity resonator integrated with two matching circuits is disposed in the microwave transmission circuit and a magnetic field generator is disposed to the outside of the cavity resonator, and having the following main features: (a) matching facilitated by a plunger for adjusting the axial length of the cavity resonator and cylindrical sling type irises, E-H tuner or three-stub tuner disposed at the portion of the cylindrical cavity resonator where the microwave is introduced, (b) a bell jar disposed within the cavity resonator to excite TM mode and (c) a magnetic field generator disposed to the outside of the cavity resonator to prepare a region of a great magnetic flux density in the discharging space at the inside of the cavity resonator.

公开(公告)号：US4951602A

公开(公告)日：1990-08-28

申请号：US442511

申请日：1989-11-28

申请人： Masahiro Kanai

发明人： Masahiro Kanai

IPC分类号： H01L21/205 ,  C23C16/50 ,  C23C16/54 ,  H01L21/00 ,  H01L31/04 ,  H01L31/075 ,  H01L31/20

CPC分类号： H01L21/67173 ,  C23C16/50 ,  C23C16/545 ,  H01L21/67017 ,  H01L21/67207 ,  H01L21/67236 ,  H01L31/075 ,  H01L31/202 ,  H01L31/206 ,  Y02E10/548 ,  Y02P70/521

摘要： An apparatus for continuously preparing semiconductor devices each comprising a plurality of semiconductor layers being stacked on a moving substrate web; said apparatus comprising a plurality of film-forming chambers by a number equal to the number of said stacked semiconductor layers, each of said film-forming chambers having a film-forming space and beingprovided with means For evacuating said film-forming space, means for supporting said substrate web in said film-forming space, means for maintaining said substrate web at a desired temperature and means for supplying a film-forming raw material gas into said film-forming space; each of said film-forming chambers being provided with a plasma-generating chamber for generating a plasma reactive with said film-forming raw material gas to cause the formation of a semiconductior film on said substrate web in said film-forming space; said plasma-generating chamber comprising a microwave permeable bell jar disposed in a cavity resonator integrated with two impedance matching circuits in a microwave circuit, said plasma-generating chamber being provided with a porous metal thin plate adjacent to said means for supplying a film-forming raw material gas, said plasma-generating chamber being provided with means for supplying a plasma-generating raw material gas selected from the group consisting of a hydrogen gas and a gaseous mixture composed of a hydrogen gas and a rare gas into said plasma-generating chamber; said apparatus being provided with a substrate web pay-out chamber provided with a mechanism for paying out said substrate web and a substrate take-up chamber provided with a mechanism for taking up said substrate web; said apparatus being provided with a substrate web-processing chamber at least between said substrate web pay-out chamber and the first film-forming chamber; each two of said chambers being connected by means of a connection pipe through which said substrate web can be moved; and said connection pipe being provided with means for preventing the gas of one of said chambers from entering into other chamber with an inert gas.

公开(公告)号：US4908330A

公开(公告)日：1990-03-13

申请号：US302245

申请日：1989-01-27

申请人： Takayoshi Arai ,  Masahiro Kanai ,  Soichiro Kawakami ,  Tsutomu Murakami

发明人： Takayoshi Arai ,  Masahiro Kanai ,  Soichiro Kawakami ,  Tsutomu Murakami

IPC分类号： C23C16/452 ,  C23C16/511 ,  C23C16/52

CPC分类号： C23C16/511 ,  C23C16/452 ,  C23C16/52

摘要： A process for the formation of a functional deposited film as a thin semiconductor film constituted with the group IV element or a thin semiconductor film constituted with group IV element alloy, by introducing, into a film forming space, a compound as the film-forming raw material and, if required, a compound containing an element capable of controlling valence electrons for the deposited film as the constituent element each in a gaseous state, or in a state where at least one of the compounds is activated, while forming hydrogen atoms in an excited state causing chemical reaction with at least one of the compounds in the gaseous state or in the activated state in an activation space different from the film forming space and introducing them into the film forming space, thereby forming a deposited film on a substrate, wherein the hydrogen atoms in the excited state are formed from a hydrogen gas or a gas mixture composed of a hydrogen gas and a rare gas by means of a microwave plasma generated in a plasma generation chamber disposed in a cavity resonator integrated with two impedance matching circuits in a microwave circuit and the excited state of the hydrogen atoms is controlled.

公开(公告)号：US4869931A

公开(公告)日：1989-09-26

申请号：US298219

申请日：1989-01-17

申请人： Masaaki Hirooka ,  Masahiro Kanai ,  Jun-Ichi Hanna ,  Isamu Shimizu

发明人： Masaaki Hirooka ,  Masahiro Kanai ,  Jun-Ichi Hanna ,  Isamu Shimizu

IPC分类号： H01L31/04 ,  C23C16/30 ,  C23C16/44 ,  C23C16/452 ,  H01L21/205 ,  H01L31/18

CPC分类号： H01L31/1828 ,  Y02E10/543

摘要： A method for forming a deposited film, which comprises introducing a gaseous starting material containing an element in the Group II of the periodic table, a starting material containing an element in the Group VI of the periodic table which are gasifiable for formation of a deposited film, and a gaseous halogenic oxidizing agent having the property of oxidation action on said starting materials into a reaction space to effect contact therebetween to thereby chemically form a plural number of precursors containing precursors under excited state, and forming a deposited film on a substrate existing in a film-forming space by the use of at least one precursor of said precursors as the feeding source for the constituent element of the deposited film.

摘要翻译： 一种形成沉积膜的方法，其包括在周期表II族中引入含有元素的气态原料，该原料含有周期表第VI族元素，其可气化以形成沉积膜 和对所述原料具有氧化作用的气态卤素氧化剂进入反应空间以进行接触，从而在激发态下化学形成含有前体的多种前体，并在存在于 通过使用所述前体的至少一种前体作为沉积膜的构成元素的进料源的成膜空间。

公开(公告)号：US4853251A

公开(公告)日：1989-08-01

申请号：US831411

申请日：1986-02-20

申请人： Shunichi Ishihara ,  Shigeru Ohno ,  Masahiro Kanai ,  Shunri Oda ,  Isamu Shimizu

发明人： Shunichi Ishihara ,  Shigeru Ohno ,  Masahiro Kanai ,  Shunri Oda ,  Isamu Shimizu

IPC分类号： C23C16/30 ,  C23C16/452 ,  G03G5/043 ,  G03G5/082 ,  G03G5/10 ,  H01L21/205 ,  H01L31/075 ,  H01L31/20

CPC分类号： G03G5/08214 ,  C23C16/30 ,  C23C16/452 ,  G03G5/0433 ,  G03G5/08278 ,  G03G5/08285 ,  G03G5/102 ,  G03G5/104 ,  H01L21/0237 ,  H01L21/02422 ,  H01L21/02425 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L31/075 ,  H01L31/20 ,  H01L31/202 ,  H01L31/204 ,  Y02E10/548 ,  Y02P70/521 ,  Y10S438/931

摘要： A process for forming a deposited film comprises introducing into a film forming space housing a substrate therein an active species (A) formed by decomposition of a compound containing carbon and a halogen and an active species (B) formed from a chemical substance for film formation which is reactive with said active species (A) separately from each other, then providing them with discharge energy and allowing both the species to react with each other thereby to form a deposited film on the substrate.

摘要翻译： 形成沉积膜的方法包括将含有碳和卤素的化合物分解形成的活性物质（A）和由用于成膜的化学物质形成的活性物质（B）引入到容纳基材的膜形成空间中 其与所述活性物质（A）彼此分开反应，然后向其提供放电能量并允许物质彼此反应，从而在基底上形成沉积膜。

公开(公告)号：US4771015A

公开(公告)日：1988-09-13

申请号：US947029

申请日：1986-12-29

申请人： Masahiro Kanai ,  Jun-Ichi Hanna ,  Isamu Shimizu

发明人： Masahiro Kanai ,  Jun-Ichi Hanna ,  Isamu Shimizu

IPC分类号： H01L31/04 ,  C23C16/22 ,  C23C16/30 ,  C23C16/44 ,  C23C16/452 ,  C23C16/50 ,  G03G5/08 ,  H01L21/205 ,  H01L21/336 ,  H01L29/78 ,  H01L29/786 ,  H01L21/20

CPC分类号： C23C16/452 ,  C23C16/22 ,  H01L21/02422 ,  H01L21/02425 ,  H01L21/0245 ,  H01L21/02505 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  Y10S438/935

摘要： A method for producing an electronic device having a multi-layer structure comprising one or more band gap controlled semiconductor thin layers formed on a substrate comprises forming at least one of said band gap controlled semiconductor thin layers according to the plasma CVD method and forming at least one of the other constituent layers according to the method comprising introducing a gaseous starting material for film formation and a gaseous halogenic oxidizing agent having the property of oxidizing said starting material into a reaction space to effect chemical contact therebetween to thereby form a plurality of precursors including a precursor in an excited state and transferring at least one of these precursors into a film forming space communicated with the reaction space as a feed source for the constituent element of the deposited film.

摘要翻译： 一种制造具有多层结构的电子器件的方法，该多层结构包括在衬底上形成的一个或多个带隙控制半导体薄层，包括根据等离子体CVD方法形成至少一个所述带隙控制的半导体薄层，并形成至少 根据包括引入用于成膜的气态起始材料和具有将所述原料氧化成反应空间的特性的气态卤素氧化剂的方法之一，以在其间进行化学接触从而形成多种前体，包括 在激发态中的前体，并将这些前体中的至少一种转移到与反应空间连通的成膜空间中，作为沉积膜的构成元素的进料源。