公开(公告)号：US20190295848A1

公开(公告)日：2019-09-26

申请号：US16441534

申请日：2019-06-14

Applicant: Infineon Technologies AG

Inventor： Johannes Georg Laven ,  Anton Mauder ,  Hans-Joachim Schulze ,  Werner Schustereder

IPC: H01L21/28 ,  H01L29/423 ,  H01L21/3213 ,  H01L29/739 ,  H01L29/66 ,  H01L29/40 ,  H01L29/78 ,  H01L21/311

Abstract: A semiconductor device and method is disclosed. In one example, the method for forming a semiconductor device includes forming a trench extending from a front side surface of a semiconductor substrate into the semiconductor substrate. The method includes forming of material to be structured inside the trench. Material to be structured is irradiated with a tilted reactive ion beam at a non-orthogonal angle with respect to the front side surface such that an undesired portion of the material to be structured is removed due to the irradiation with the tilted reactive ion beam while an irradiation of another portion of the material to be structured is masked by an edge of the trench.

公开(公告)号：US10396074B2

公开(公告)日：2019-08-27

申请号：US16116463

申请日：2018-08-29

Applicant: Infineon Technologies AG

Inventor： Anton Mauder ,  Franz-Josef Niedernostheide ,  Christian Philipp Sandow

IPC: H01L27/088 ,  H01L29/10 ,  H01L29/423 ,  H03K17/687 ,  H01L29/739 ,  H01L29/78 ,  H01L29/49 ,  H01L29/40 ,  H01L29/06

Abstract: A power semiconductor device includes a semiconductor body coupled to first and second load terminal structures, and first and second cells each configured for controlling a load current and electrically connected to the first load terminal structure and to a drift region. A first mesa in the first cell includes a port region electrically connected to the first load terminal structure, and a first channel region coupled to the drift region. A second mesa included in the second cell includes a port region electrically connected to the first load terminal structure, and a second channel region coupled to the drift region. The mesas are spatially confined in a direction perpendicular to a direction of the load current by an insulation structure, and have a total extension of less than 100 nm in that direction. The first channel region includes an inversion channel. The second channel region includes an accumulation channel.

公开(公告)号：US10340336B2

公开(公告)日：2019-07-02

申请号：US15637459

申请日：2017-06-29

Applicant: Infineon Technologies AG

Inventor： Anton Mauder ,  Franz-Josef Niedernostheide ,  Christian Philipp Sandow

IPC: H01L29/66 ,  H01L21/332 ,  H01L21/336 ,  H01L29/06 ,  H01L29/78 ,  H01L29/739

Abstract: A power semiconductor device includes a semiconductor body coupled to first and second load terminal structures, an active cell field in the body, and a plurality of first and second cells in the active cell field. Each cell is electrically connected to the first load terminal structure and to a drift region. Each first cell includes a mesa having a port region electrically connected to the first load terminal structure, and a channel region coupled to the drift region. Each second cell includes a mesa having a port region of the opposite conductivity type electrically connected to the first load terminal structure, and a channel region coupled to the drift region. Each mesa is spatially confined in a direction perpendicular to a direction of the load current within the respective mesa, by an insulation structure and has a total extension of less than 100 nm in the direction.

公开(公告)号：US10141404B2

公开(公告)日：2018-11-27

申请号：US15635300

申请日：2017-06-28

Applicant: Infineon Technologies AG

Inventor： Anton Mauder ,  Christian Philipp Sandow ,  Franz-Josef Niedernostheide

IPC: H01L29/06 ,  H01L29/10 ,  H01L29/40 ,  H01L29/739 ,  H01L29/78 ,  H01L29/36 ,  H01L29/417 ,  H01L29/423

Abstract: A power semiconductor device includes a semiconductor body coupled to first and second load terminal structures, first and second cells electrically connected to the first load terminal structure and to a drift region, the drift region having a first conductivity type; a first mesa in the first cell and including: a port region electrically connected to the first load terminal structure, and a channel region coupled to the drift region; a second mesa in the second cell and including: a port region of the opposite conductivity type and electrically connected to the first load terminal structure, and a channel region coupled to the drift region. Each mesa is spatially confined, in a direction perpendicular to a direction of the load current within the respective mesa, by an insulation structure. The insulation structure houses a control electrode structure, and a guidance electrode arranged between the mesas.

公开(公告)号：US20180301537A1

公开(公告)日：2018-10-18

申请号：US15951918

申请日：2018-04-12

Applicant: Infineon Technologies AG

Inventor： Joachim Weyers ,  Stefan Gamerith ,  Franz Hirler ,  Anton Mauder

IPC: H01L29/16 ,  H01L27/02 ,  H01L29/06

Abstract: A semiconductor device includes a semiconductor body having a first surface and a second surface opposite to the first surface. A transistor structure is formed is the semiconductor body. A trench structure extends from the first surface into the semiconductor body. An electrostatic discharge protection structure is accommodated in the trench structure. The electrostatic discharge protection structure includes a first terminal region and a second terminal region. A source contact structure at the first surface is electrically connected to source regions of the transistor structure and to the first terminal region. A gate contact structure at the first surface is electrically connected to a gate electrode of the transistor structure and to the second terminal region.

公开(公告)号：US10083960B2

公开(公告)日：2018-09-25

申请号：US15637170

申请日：2017-06-29

Applicant: Infineon Technologies AG

Inventor： Anton Mauder ,  Franz-Josef Niedernostheide ,  Christian Philipp Sandow

IPC: H01L27/088 ,  H01L29/10 ,  H01L29/423 ,  H03K17/687 ,  H01L29/49 ,  H01L29/78 ,  H01L29/739

CPC classification number: H01L27/0883 ,  H01L29/0692 ,  H01L29/0696 ,  H01L29/1037 ,  H01L29/1045 ,  H01L29/405 ,  H01L29/4238 ,  H01L29/49 ,  H01L29/7391 ,  H01L29/7396 ,  H01L29/7397 ,  H01L29/7802 ,  H01L29/7804 ,  H01L29/7811 ,  H01L29/7813 ,  H03K17/687

Abstract: A power semiconductor device includes a semiconductor body coupled to first and second load terminal structures, and first and second cells each configured for controlling a load current and electrically connected to the first load terminal structure and to a drift region. A first mesa in the first cell includes a port region electrically connected to the first load terminal structure, and a first channel region coupled to the drift region. A second mesa included in the second cell includes a port region electrically connected to the first load terminal structure, and a second channel region coupled to the drift region. The mesas are spatially confined in a direction perpendicular to a direction of the load current by an insulation structure, and have a total extension of less than 100 nm in that direction. The first channel region includes an inversion channel. The second channel region includes an accumulation channel.

公开(公告)号：US20180061644A1

公开(公告)日：2018-03-01

申请号：US15687874

申请日：2017-08-28

Applicant: Infineon Technologies AG

Inventor： Johannes Georg Laven ,  Anton Mauder ,  Hans-Joachim Schulze ,  Werner Schustereder

IPC: H01L21/28 ,  H01L29/423 ,  H01L21/311 ,  H01L21/3213

CPC classification number: H01L21/28158 ,  H01J2237/30472 ,  H01J2237/3151 ,  H01L21/2652 ,  H01L21/28114 ,  H01L21/31116 ,  H01L21/32136 ,  H01L29/045 ,  H01L29/407 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/42376 ,  H01L29/66348 ,  H01L29/66734 ,  H01L29/7395 ,  H01L29/7397 ,  H01L29/7813

Abstract: A semiconductor device and method is disclosed. In one example, the method for forming a semiconductor device includes forming a trench extending from a front side surface of a semiconductor substrate into the semiconductor substrate. The method includes forming of material to be structured inside the trench. Material to be structured is irradiated with a tilted reactive ion beam at a non-orthogonal angle with respect to the front side surface such that an undesired portion of the material to be structured is removed due to the irradiation with the tilted reactive ion beam while an irradiation of another portion of the material to be structured is masked by an edge of the trench.

公开(公告)号：US20180013013A1

公开(公告)日：2018-01-11

申请号：US15642893

申请日：2017-07-06

Applicant: Infineon Technologies AG

Inventor： Anton Mauder ,  Frank Dieter Pfirsch ,  Hans-Joachim Schulze ,  Philipp Seng ,  Armin Willmeroth

IPC: H01L29/861 ,  H01L29/06 ,  H01L29/66 ,  H01L29/08 ,  H01L21/225 ,  H01L21/266

CPC classification number: H01L29/8611 ,  H01L21/2253 ,  H01L21/2652 ,  H01L21/266 ,  H01L29/0615 ,  H01L29/0619 ,  H01L29/0623 ,  H01L29/063 ,  H01L29/0688 ,  H01L29/08 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/36 ,  H01L29/66128 ,  H01L29/66136

Abstract: A semiconductor device includes an anode doping region of a diode structure arranged in a semiconductor substrate. The anode doping region has a first conductivity type. The semiconductor device further includes a second conductivity type contact doping region having a second conductivity type. The second conductivity type contact doping region is arranged at a surface of the semiconductor substrate and surrounded in the semiconductor substrate by the anode doping region. The anode doping region includes a buried non-depletable portion. At least part of the buried non-depletable portion is located below the second conductivity type contact doping region in the semiconductor substrate.

公开(公告)号：US20180006027A1

公开(公告)日：2018-01-04

申请号：US15635987

申请日：2017-06-28

Applicant: Infineon Technologies AG

Inventor： Anton Mauder ,  Franz-Josef Niedernostheide ,  Christian Philipp Sandow

IPC: H01L27/088 ,  H01L29/08 ,  H01L29/10 ,  H01L29/06 ,  H01L29/423 ,  H01L29/32

CPC classification number: H01L27/088 ,  H01L29/0607 ,  H01L29/0619 ,  H01L29/0638 ,  H01L29/0649 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/105 ,  H01L29/1095 ,  H01L29/32 ,  H01L29/34 ,  H01L29/404 ,  H01L29/4238 ,  H01L29/7397

Abstract: A power semiconductor device is disclosed. In one example, the device includes a semiconductor body coupled to a first load terminal structure and a second load terminal structure. An active cell field is implemented in the semiconductor body. The active cell field is surrounded by an edge termination zone. A plurality of first cells and a plurality of second cells are provided in the active cell field. Each first cell includes a first mesa, the first mesa including: a first port region and a first channel region. Each second cell includes a second mesa, the second mesa including a second port region. The active cell field is surrounded by a drainage region that is arranged between the active cell field and the edge termination zone.

公开(公告)号：US20170170823A1

公开(公告)日：2017-06-15

申请号：US15377750

申请日：2016-12-13

Applicant: Infineon Technologies AG

Inventor： Markus Bina ,  Jens Barrenscheen ,  Anton Mauder

IPC: H03K17/56 ,  H01L49/02 ,  G01R19/00 ,  H01L29/68

CPC classification number: H03K17/56 ,  G01R19/0092 ,  H01L28/60 ,  H01L29/68 ,  H01L29/7393 ,  H03K2217/0027

Abstract: A semiconductor device includes a first load terminal, a second load terminal and a semiconductor body coupled to the first load terminal and the second load terminal. The semiconductor body is configured to conduct a load current along a load current path between the first load terminal and the second load terminal. The semiconductor device further includes a control electrode electrically insulated from the semiconductor body and configured to control a part of the load current path, and an electrically floating sensor electrode arranged adjacent to the control electrode. The sensor electrode is electrically insulated from each of the semiconductor body, and the control electrode and is capacitively coupled to the load current path.