公开(公告)号：US20070248754A1

公开(公告)日：2007-10-25

申请号：US11735603

申请日：2007-04-16

申请人： Xinjian Lei ,  Michael Ulman ,  Liam Quinn ,  Hansong Cheng

发明人： Xinjian Lei ,  Michael Ulman ,  Liam Quinn ,  Hansong Cheng

IPC分类号： C23C16/00

CPC分类号： C07F9/005 ,  C07F7/003 ,  C23C16/40

摘要： A plurality of metal-containing complexes of a polydentate beta-ketoiminate, one embodiment of which is represented by the structure are shown: wherein M is a metal such as calcium, strontium, barium, scandium, yttrium, lanthanum, titanium, zirconium, vanadium, tungsten, manganese, cobalt, iron, nickel, ruthenium, zinc, copper, palladium, platinum, iridium, rhenium, osmium; wherein R1 is selected from the group consisting of alkyl, fluoroalkyl, cycloaliphatic, and aryl, having from 1 to 10 carbon atoms; R2 can be from the group consisting of hydrogen, alkyl, alkoxy, cycloaliphatic, and aryl; R3 is linear or branched selected from the group consisting of alkylene, fluoroalkyl, cycloaliphatic, and aryl; R4 is an alkylene bridge; R5-6 are individually linear or branched selected from the group consisting of alkyl, fluoroalkyl, cycloaliphatic, aryl, and they can be connected to form a ring containing carbon, oxygen, or nitrogen atoms; n is an integer equal to the valence of the metal M.

摘要翻译： 多结晶β-酮亚胺酸盐的多金属络合物，其一个实施方案由结构表示：其中M是金属如钙，锶，钡，钪，钇，镧，钛，锆，钒 钨，锰，钴，铁，镍，钌，锌，铜，钯，铂，铱，铼，锇; 其中R 1选自具有1至10个碳原子的烷基，氟烷基，脂环族和芳基; R 2可以来自氢，烷基，烷氧基，脂环族和芳基; R 3是直链或支链的，选自亚烷基，氟代烷基，脂环族和芳基; R 4是亚烷基桥; R 5-10各自为直链或支链，选自烷基，氟烷基，脂环族，芳基，并且它们可连接形成含有碳，氧或氮原子的环; n是等于金属M的化合价的整数。

公开(公告)号：US08563353B2

公开(公告)日：2013-10-22

申请号：US13466275

申请日：2012-05-08

申请人： Manchao Xiao ,  Liu Yang ,  Xinjian Lei ,  Iain Buchanan

发明人： Manchao Xiao ,  Liu Yang ,  Xinjian Lei ,  Iain Buchanan

IPC分类号： H01L21/00 ,  H01L21/06 ,  H01L21/469

CPC分类号： H01L21/06 ,  C23C18/1204 ,  C23C18/1225 ,  H01L21/0256 ,  H01L21/02562 ,  H01L21/02568 ,  H01L21/0262 ,  H01L21/02658 ,  H01L31/0296 ,  H01L31/032 ,  H01L31/0322 ,  H01L45/06 ,  H01L45/144 ,  H01L45/1608 ,  Y02E10/541

摘要： Described herein is a method and liquid-based precursor composition for depositing a multicomponent film. In one embodiment, the method and compositions described herein are used to deposit Germanium Tellurium (GeTe), Antimony Tellurium (SbTe), Antimony Germanium (SbGe), Germanium Antimony Tellurium (GST), Indium Antimony Tellurium (IST), Silver Indium Antimony Tellurium (AIST), Cadmium Telluride (CdTe), Cadmium Selenide (CdSe), Zinc Telluride (ZnTe), Zinc Selenide (ZnSe), Copper indium gallium selenide (CIGS) films or other tellurium and selenium based metal compounds for phase change memory and photovoltaic devices.

摘要翻译： 本文描述了一种用于沉积多组分膜的方法和基于液体的前体组合物。 在一个实施方案中，本文所述的方法和组合物用于沉积锗碲（GeTe），锑碲（SbTe），锑锗（SbGe），锗锑碲（GST），铟锑碲（IST），银铟锑碲 （AIST），碲化镉（CdTe），硒化镉（CdSe），碲化锌（ZnTe），硒化锌（ZnSe），铜铟镓硒（CIGS）膜或其他用于相变记忆和光伏的碲和硒基金属化合物 设备。

公开(公告)号：US20130011579A1

公开(公告)日：2013-01-10

申请号：US13299448

申请日：2011-11-18

申请人： John Anthony Thomas Norman ,  Xinjian Lei

发明人： John Anthony Thomas Norman ,  Xinjian Lei

IPC分类号： C07F7/28 ,  C23C16/455

CPC分类号： C07F17/00 ,  C23C16/18 ,  C23C16/405 ,  C23C16/45553

摘要： Organometallic compounds suitable for use as vapor phase deposition precursors for metal-containing films are provided. Methods of depositing metal-containing films using certain organometallic precursors are also provided. Such metal-containing films are particularly useful in the manufacture of electronic devices.

摘要翻译： 提供了适合用作含金属膜的气相沉积前体的有机金属化合物。 还提供了使用某些有机金属前体沉积含金属膜的方法。 这种含金属膜在电子器件的制造中特别有用。

公开(公告)号：US07947814B2

公开(公告)日：2011-05-24

申请号：US11735603

申请日：2007-04-16

申请人： Xinjian Lei ,  Michael Ulman ,  Liam Quinn ,  Hansong Cheng

发明人： Xinjian Lei ,  Michael Ulman ,  Liam Quinn ,  Hansong Cheng

IPC分类号： C07F5/00

CPC分类号： C07F9/005 ,  C07F7/003 ,  C23C16/40

摘要： A plurality of metal-containing complexes of a polydentate beta-ketoiminate, one embodiment of which is represented by the structure are shown: wherein M is a metal such as calcium, strontium, barium, scandium, yttrium, lanthanum, titanium, zirconium, vanadium, tungsten, manganese, cobalt, iron, nickel, ruthenium, zinc, copper, palladium, platinum, iridium, rhenium, osmium; wherein R1 is selected from the group consisting of alkyl, fluoroalkyl, cycloaliphatic, and aryl, having from 1 to 10 carbon atoms; R2 can be from the group consisting of hydrogen, alkyl, alkoxy, cycloaliphatic, and aryl; R3 is linear or branched selected from the group consisting of alkylene, fluoroalkyl, cycloaliphatic, and aryl; R4 is an alkylene bridge; R5-6 are individually linear or branched selected from the group consisting of alkyl, fluoroalkyl, cycloaliphatic, aryl, and they can be connected to form a ring containing carbon, oxygen, or nitrogen atoms; n is an integer equal to the valence of the metal M.

摘要翻译： 多结晶β-酮亚胺酸盐的多金属络合物，其一个实施方案由结构表示：其中M是金属如钙，锶，钡，钪，钇，镧，钛，锆，钒 钨，锰，钴，铁，镍，钌，锌，铜，钯，铂，铱，铼，锇; 其中R 1选自具有1至10个碳原子的烷基，氟烷基，脂环族和芳基; R2可以来自由氢，烷基，烷氧基，脂环族和芳基组成的组; R3是选自亚烷基，氟代烷基，脂环族和芳基的直链或支链; R4是亚烷基桥; R5-6各自为直链或支链，选自烷基，氟烷基，脂环族，芳基，并且它们可连接形成含有碳，氧或氮原子的环; n是等于金属M的化合价的整数。

公开(公告)号：US20100304047A1

公开(公告)日：2010-12-02

申请号：US12476734

申请日：2009-06-02

申请人： Liu Yang ,  Xinjian Lei ,  Bing Han ,  Manchao Xiao ,  Eugene Joseph Karwacki, JR. ,  Kazuhide Hasebe ,  Masanobu Matsunaga ,  Masato Yonezawa ,  Hansong Cheng

发明人： Liu Yang ,  Xinjian Lei ,  Bing Han ,  Manchao Xiao ,  Eugene Joseph Karwacki, JR. ,  Kazuhide Hasebe ,  Masanobu Matsunaga ,  Masato Yonezawa ,  Hansong Cheng

IPC分类号： H05H1/24 ,  B05D5/12

CPC分类号： H01L21/02271 ,  C23C16/308 ,  C23C16/345 ,  C23C16/401 ,  C23C16/45536 ,  H01L21/02126 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/3145 ,  H01L21/31608 ,  H01L21/31633 ,  H01L21/3185

摘要： This invention discloses the method of forming silicon nitride, silicon oxynitride, silicon oxide, carbon-doped silicon nitride, carbon-doped silicon oxide and carbon-doped oxynitride films at low deposition temperatures. The silicon containing precursors used for the deposition are monochlorosilane (MCS) and monochloroalkylsilanes. The method is preferably carried out by using plasma enhanced atomic layer deposition, plasma enhanced chemical vapor deposition, and plasma enhanced cyclic chemical vapor deposition.

摘要翻译： 本发明公开了在低沉积温度下形成氮化硅，氮氧化硅，氧化硅，碳掺杂氮化硅，碳掺杂氧化硅和碳掺杂氧氮化物膜的方法。 用于沉积的含硅前体是一氯硅烷（MCS）和一氯代烷基硅烷。 该方法优选通过使用等离子体增强原子层沉积，等离子体增强化学气相沉积和等离子体增强循环化学气相沉积来进行。

公开(公告)号：US20080145535A1

公开(公告)日：2008-06-19

申请号：US11949868

申请日：2007-12-04

申请人： Xinjian Lei ,  Hareesh Thridandam ,  Manchao Xiao ,  Heather Regina Bowen ,  Thomas Richard Gaffney

发明人： Xinjian Lei ,  Hareesh Thridandam ,  Manchao Xiao ,  Heather Regina Bowen ,  Thomas Richard Gaffney

IPC分类号： C23C16/06

CPC分类号： C23C16/34 ,  C23C16/45553

摘要： A process to deposit metal silicon nitride on a substrate comprising: sorbing a metal amide on a heated substrate, purging away the unsorbed metal amide, contacting a silicon-containing source having one or more Si—H3 fragments with the heated substrate to react with the sorbed metal amide, wherein the silicon-containing source has one or more H3Si—NR02(R0═SiH3, R, R1 or R2, defined below) groups selected from the group consisting of one or more of: wherein R and R1 in the formulas represent aliphatic groups typically having from 2 to about 10 carbon atoms, e.g., branched alkyl, cycloalkyl with R and R1 in formula A also being combinable into a cyclic group, and R2 representing a single bond, (CH2)n, a ring, or SiH2, and purging away the unreacted silicon-containing source.

摘要翻译： 一种在衬底上沉积金属氮化硅的方法，包括：在加热的衬底上吸附金属酰胺，清除未吸附的金属酰胺，与含有一个或多个Si-H 3 N 3片段的含硅源接触 加热的底物与吸附的金属酰胺反应，其中含硅源具有一个或多个H 3 Si-NR O 2 O 2， （R 0〜S 3 H 3，R 1，R 1或R 2）定义如下）选自 由下式中的一个或多个组成：其中式中的R和R 1表示通常具有2至约10个碳原子的脂族基团，例如支链烷基，具有R和R 1的环烷基 式A中也可以组合成环状基团，R 2表示单键，（CH 2 CH 2）n， 环或SiH 2 H 2，并且清除未反应的含硅源。

公开(公告)号：US20070275166A1

公开(公告)日：2007-11-29

申请号：US11439554

申请日：2006-05-23

申请人： Hareesh Thridandam ,  Manchao Xiao ,  Xinjian Lei ,  Thomas Richard Gaffney

发明人： Hareesh Thridandam ,  Manchao Xiao ,  Xinjian Lei ,  Thomas Richard Gaffney

IPC分类号： C23C16/00

CPC分类号： H01L21/31608 ,  C23C16/402 ,  H01L21/02126 ,  H01L21/02219 ,  H01L21/02271 ,  H01L21/3145 ,  H01L21/31633

摘要： The present invention is directed to a method for depositing a silicon oxide layer on a substrate by CVD. The reaction of an organoaminosilane precursor where the alkyl group has at least two carbon atoms in the presence of an oxidizing agent allows for the formation of a silicon oxide film. The organoaminosilanes are represented by the formulas: The use of diisopropylaminosilane is the preferred precursor for the formation of the silicon oxide film.

摘要翻译： 本发明涉及通过CVD在衬底上沉积氧化硅层的方法。 在氧化剂存在下，烷基具有至少两个碳原子的有机氨基硅烷前体的反应允许形成氧化硅膜。 有机基氨基硅烷由下式表示：使用二异丙基氨基硅烷是形成氧化硅膜的优选前体。

公开(公告)号：US20070082500A1

公开(公告)日：2007-04-12

申请号：US11522768

申请日：2006-09-18

申请人： John Norman ,  Xinjian Lei

发明人： John Norman ,  Xinjian Lei

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： C07F11/005 ,  C07F7/003 ,  C07F9/005

摘要： An organometallic complex represented by the structure: wherein M is a metal selected from Group 4 of the Periodic Table of the Elements and R1-4 can be same or different selected from the group consisting of dialkylamide, difluoralkylamide, hydrogen, alkyl, alkoxy, fluoroalkyl and alkoxy, cycloaliphatic, and aryl with the additional provision that when R1 and R2 are dialkylamide, difluoralkylamide, alkoxy, fluoroalkyl and alkoxy, they can be connected to form a ring. Related compounds are also disclosed. CVD and ALD deposition processes using the complexes are also included.

摘要翻译： 由以下结构表示的有机金属络合物：其中M是选自元素周期表第4族的金属和R 1〜4，可以相同或不同，选自二烷基酰胺，二氟烷基酰胺 ，氢，烷基，烷氧基，氟烷基和烷氧基，脂环族和芳基，另外条件是当R 1和R 2是二烷基酰胺，二氟烷基酰胺，烷氧基，氟代烷基和烷氧基 ，它们可以连接形成环。 还公开了相关化合物。 还包括使用复合物的CVD和ALD沉积方法。

公开(公告)号：US20060127578A1

公开(公告)日：2006-06-15

申请号：US11008069

申请日：2004-12-09

申请人： Xinjian Lei ,  Ron Rulkens

发明人： Xinjian Lei ,  Ron Rulkens

IPC分类号： C07F7/08 ,  C23C16/00 ,  C23C16/06 ,  B05D3/02

CPC分类号： C07F7/045 ,  C23C16/40

摘要： A composition selected from the group consisting of bis(tert-butoxy)(isopropoxy)silanol, bis(isopropoxy)(tert-butoxy)silanol, bis(tert-pentoxy)(isopropoxy)silanol, bis(isopropoxy)(tert-pentoxy)silanol, bis(tert-pentoxy)(tert-butoxy)silanol, bis(tert-butoxy)(tert-pentoxy)silanol and mixtures thereof; its use to form a metal or metalloid silicate layer on a substrate and the synthesis of the mixed alkoxysilanols.

摘要翻译： 选自双（叔丁氧基）（异丙氧基）硅烷醇，双（异丙氧基）（叔丁氧基）硅烷醇，双（叔戊氧基）（异丙氧基）硅烷醇，双（异丙氧基）（叔戊氧基） 硅烷醇，双（叔戊氧基）（叔丁氧基）硅烷醇，双（叔丁氧基）（叔戊氧基）硅烷醇及其混合物; 其用于在基材上形成金属或准金属硅酸盐层和混合的烷氧基硅烷醇的合成。

公开(公告)号：US06552209B1

公开(公告)日：2003-04-22

申请号：US10179818

申请日：2002-06-24

申请人： Xinjian Lei ,  John Anthony Thomas Norman

发明人： Xinjian Lei ,  John Anthony Thomas Norman

IPC分类号： C07F900

CPC分类号： C07F9/005

摘要： This invention relates to an improved process to produce metal imino/amino complexes having the formula R1N=M(NR2R3)3 where M is a pentavalent metal or (R1N=)2M′(NR2R3)2 where M′ is a hexavalent metal. In the process MX5 and two-equivalents of primary amine R1NH2 or metal hexahalide, M′X6 with seven-equivalents of primary amine H2NR1 are reacted in the presence of excess pyridine. The resulting reaction product R1N═MX3(py)2 or [(R1N)2M′X2(py)]2 then is followed by the addition of LiNR2R3. The process provides the final product in high yield and in high purity as well as representing a simplified procedure for synthesizing R1N═M(NR2 R3)3 or (R1N═)2M′(NR2R3)2type complexes.

摘要翻译： 本发明涉及制备具有式R 1 N = M（NR 2 R 3）3的金属亚氨基/氨基络合物的改进方法，其中M是五价金属或（R1N =）2M'（NR2R3）2，其中M'是六价金属。 在该方法中，MX5和2当量的伯胺R 1 NH 2或金属六氢化物，具有7当量伯胺H 2 N R 1的M'X 6在过量的吡啶的存在下反应。 得到的反应产物R1N = MX3（py）2或[（R1N）2M'X2（py）] 2然后加入LiNR2R3。 该方法以高产率和高纯度提供最终产物，以及代表合成R1N = M（NR2 R3）3或（R1N =）2M'（NR2R3）2型络合物的简化程序。