公开(公告)号：US20150084672A1

公开(公告)日：2015-03-26

申请号：US14560357

申请日：2014-12-04

Applicant: Rambus Inc.

Inventor： Kyung Suk Oh ,  Ian P. Shaeffer

IPC: G06F13/40 ,  H03K19/0175 ,  G11C11/4093

CPC classification number: H03K19/0005 ,  G06F3/0605 ,  G06F3/0659 ,  G06F3/0685 ,  G06F13/4086 ,  G11C11/401 ,  G11C11/4063 ,  G11C11/4093 ,  G11C11/41 ,  G11C11/413 ,  G11C11/417 ,  G11C11/419 ,  G11C16/06 ,  G11C16/26 ,  G11C16/32 ,  H03K19/017545

Abstract: An integrated circuit device transmits to a dynamic random access memory (DRAM) one or more commands that specify programming of a digital control value within the DRAM, the digital control value indicating a termination impedance that the DRAM is to couple to a data interface of the DRAM in response to receiving a write command and during reception of write data corresponding to the write command, and that the DRAM is to decouple from the data interface after reception of the write data corresponding to the write command. Thereafter, the integrated circuit device transmits to the DRAM a write command indicating that write data is to be sampled by a data interface of the DRAM during a first time interval and that cause the DRAM to couple the termination impedance to the data interface during the first time interval and decouple the termination impedance from the data interface after the first time interval.

Abstract translation: 集成电路装置向动态随机存取存储器（DRAM）发送指定DRAM内数字控制值的编程的一个或多个命令，数字控制值指示DRAM要耦合到DRAM的数据接口的终端阻抗 DRAM响应于接收到写入命令并且在接收与写入命令相对应的写入数据期间，并且DRAM在接收到与写入命令相对应的写入数据之后与数据接口分离。 此后，集成电路装置向DRAM发送指示在第一时间间隔期间通过DRAM的数据接口对写入数据进行采样的写入命令，并且使得DRAM在第一时间间隔期间将终止阻抗耦合到数据接口 时间间隔，并在第一个时间间隔后将数据接口的终端阻抗解耦。

公开(公告)号：US08981811B2

公开(公告)日：2015-03-17

申请号：US13952393

申请日：2013-07-26

Applicant: Rambus Inc.

Inventor： Kyung Suk Oh ,  Ian P. Shaeffer

IPC: H03K17/16 ,  H03K19/0175 ,  G06F13/40 ,  G11C11/4093

CPC classification number: H03K19/0005 ,  G06F3/0605 ,  G06F3/0659 ,  G06F3/0685 ,  G06F13/4086 ,  G11C11/401 ,  G11C11/4063 ,  G11C11/4093 ,  G11C11/41 ,  G11C11/413 ,  G11C11/417 ,  G11C11/419 ,  G11C16/06 ,  G11C16/26 ,  G11C16/32 ,  H03K19/017545

Abstract: An integrated circuit memory device stores a plurality of digital values that specify respective termination impedances. The memory device switchably couples respective sets of load elements to a data input/output (I/O) to apply the termination impedances specified by the digital values, including, applying a first termination impedance to the data I/O during an idle state of the memory device, applying a first one of two non-equal termination impedances to the data I/O while the memory device receives write data in a memory write operation and applying a second one of the two non-equal termination impedances to the data I/O while another memory device receives write data in a memory write operation. When outputting read data via the data I/O in a memory read operation, the memory device switchably couples to the data I/O at least a portion of the load elements included in the sets of load elements.

Abstract translation: 集成电路存储器件存储指定相应终端阻抗的多个数字值。 存储器件可将各组负载元件可切换地耦合到数据输入/输出（I / O），以施加由数字值指定的终端阻抗，包括在空闲状态期间向数据I / O施加第一终端阻抗 所述存储器件在所述存储器件在存储器写入操作中接收到写入数据并将所述两个不相等的终端阻抗中的第二个施加到所述数据I上时，将两个不相等的终端阻抗中的第一个施加到所述数据I / O / O，而另一个存储器件在存储器写入操作中接收写入数据。 当在存储器读取操作中经由数据I / O输出读取数据时，存储器件可切换地耦合到包含在负载元件组中的负载元件的至少一部分的数据I / O。

公开(公告)号：US20150042378A1

公开(公告)日：2015-02-12

申请号：US14523923

申请日：2014-10-26

Applicant: Rambus Inc.

Inventor： Kyung Suk Oh ,  Ian P. Shaeffer

IPC: H03K19/0175 ,  G11C11/401 ,  H03K19/00

CPC classification number: H03K19/0005 ,  G06F3/0605 ,  G06F3/0659 ,  G06F3/0685 ,  G06F13/4086 ,  G11C11/401 ,  G11C11/4063 ,  G11C11/4093 ,  G11C11/41 ,  G11C11/413 ,  G11C11/417 ,  G11C11/419 ,  G11C16/06 ,  G11C16/26 ,  G11C16/32 ,  H03K19/017545

Abstract: In a memory module having an integrated-circuit buffer device coupled to one or more integrated-circuit memory devices, the buffer device receives write data signals from an external control component via a set of data inputs, the write data signals indicating write data to be stored within one or more of the memory devices. Logic within the buffer device sequentially applies controllable termination impedance configurations at the data inputs based on an indication received from the control component and an internal state of the buffer device, applying a first controllable termination impedance configuration at each of the data inputs during a first internal state of the buffer device corresponding to the reception of the write data signals on the data inputs, and applying a second controllable termination impedance configuration at each of the data inputs during a second internal state of the buffer device that succeeds the first internal state.

Abstract translation: 在具有耦合到一个或多个集成电路存储器件的集成电路缓冲器件的存储器模块中，缓冲器件经由一组数据输入从外部控制部件接收写入数据信号，写入数据信号指示写入数据为 存储在一个或多个存储器件中。 缓冲装置内的逻辑基于从控制部件接收到的指示和缓冲装置的内部状态，顺序地在数据输入端施加可控终端阻抗配置，在第一内部的每个数据输入端施加第一可控终端阻抗配置 所述缓冲器装置的状态与所述数据输入上的所述写数据信号的接收相对应，以及在所述第一内部状态的所述缓冲器件的第二内部状态期间，在每个所述数据输入端施加第二可控终端阻抗配置。

公开(公告)号：US20140173240A1

公开(公告)日：2014-06-19

申请号：US14153822

申请日：2014-01-13

Applicant: Rambus Inc.

Inventor： Ian P. Shaeffer ,  Bret Stott ,  Benedict C. Lau

IPC: G06F13/16 ,  G11C7/10

CPC classification number: G11C7/1063 ,  G06F12/00 ,  G06F13/1689 ,  G11C7/1072

Abstract: A memory controller having a time-staggered request signal output. A first timing signal is generated while a second timing signal is generated having a first phase difference relative to the first timing signal. An address value is transmitted in response to the first timing signal and a control value is transmitted in response to the second timing signal, the address value and control value constituting portions of a first memory access request.

Abstract translation: 具有时间交错请求信号输出的存储器控​​制器。 产生第一定时信号，同时产生具有相对于第一定时信号的第一相位差的第二定时信号。 响应于第一定时信号发送地址值，响应于构成第一存储器访问请求的第二定时信号，地址值和控制值发送控制值。

公开(公告)号：US20140164823A1

公开(公告)日：2014-06-12

申请号：US14098322

申请日：2013-12-05

Applicant: Rambus Inc.

Inventor： Hongzhong Zheng ,  Brent Haukness ,  Mehmet Günhan Ertosun ,  Ian P. Shaeffer

IPC: G06F11/20

CPC classification number: G06F11/2053 ,  G11C13/0002 ,  G11C13/0033 ,  G11C16/3431 ,  G11C29/50008 ,  G11C29/52 ,  G11C2029/0409

Abstract: Components of a memory system, such as a memory controller and memory device, which detect accumulated memory read disturbances and correct such disturbances before they reach a level that causes errors. The memory device includes a memory array and a disturbance control circuit. The memory array includes a plurality of memory rows. Each memory row is associated with a disturbance warning circuit having a state that corresponds to an accumulated disturbance in the memory row. The disturbance control circuit determines, responsive to an activation of a memory row of the plurality of memory rows specified by a row access command, whether the disturbance condition is present in the memory row based on the state of the disturbance warning circuit associated with the memory row. If a disturbance condition is present, the disturbance control circuit causes a recovery operation to be performed on the memory row to reduce the accumulated disturbances.

Abstract translation: 诸如存储器控制器和存储器件的存储器系统的组件，其在累积的存储器读出干扰之前检测累积的存储器读取干扰并且在达到导致错误的电平之前校正这种干扰。 存储器件包括存储器阵列和干扰控制电路。 存储器阵列包括多个存储器行。 每个存储器行与具有对应于存储器行中的累积干扰的状态的干扰警告电路相关联。 干扰控制电路响应于由行访问命令指定的多个存储行的存储器行的激活，基于与存储器相关联的干扰警告电路的状态来确定存储器行中是否存在干扰条件 行。 如果存在干扰条件，则扰动控制电路使得对存储器行进行恢复操作以减少累积的干扰。

公开(公告)号：US12189548B2

公开(公告)日：2025-01-07

申请号：US17534180

申请日：2021-11-23

Applicant: Rambus Inc.

Inventor： Ian P. Shaeffer ,  Arun Vaidyanath ,  Sanku Mukherjee

IPC: G06F13/16 ,  G06F1/3234 ,  G06F12/02 ,  G06F13/40

Abstract: An expandable memory system that enables a fixed signaling bandwidth to be configurably re-allocated among dedicated memory channels. Memory channels having progressively reduced widths are dedicated to respective memory sockets, thus enabling point-to-point signaling with respect to each memory socket without signal-compromising traversal of unloaded sockets or costly replication of a full-width memory channel for each socket.

公开(公告)号：US12066958B2

公开(公告)日：2024-08-20

申请号：US18135095

申请日：2023-04-14

Applicant: Rambus Inc.

Inventor： Jared L. Zerbe ,  Ian P. Shaeffer ,  John Eble

IPC: G06F13/16 ,  G06F1/04 ,  G06F1/06 ,  G06F1/08 ,  G06F1/10 ,  G11C7/22 ,  G11C7/04 ,  H04L7/033

CPC classification number: G06F13/1689 ,  G06F1/04 ,  G06F1/06 ,  G06F1/08 ,  G06F1/10 ,  G06F13/161 ,  G06F13/1657 ,  G11C7/222 ,  G11C7/04 ,  H04L7/033

Abstract: A memory controller includes a clock generator to generate a first clock signal and a timing circuit to generate a second clock signal from the first clock signal. The second clock signal times communications with any of a plurality of memory devices in respective ranks, including a first memory device in a first rank and a second memory device in a second rank. The timing circuit is configured to adjust a phase of the first clock signal, when the memory controller is communicating with the second memory device, based on calibration data associated with the second memory device and timing adjustment data associated with feedback from at least the first memory device.

公开(公告)号：US11349478B2

公开(公告)日：2022-05-31

申请号：US16940349

申请日：2020-07-27

Applicant: Rambus Inc.

Inventor： Kyung Suk Oh ,  Ian P. Shaeffer

IPC: H03K19/00 ,  G06F13/40 ,  G11C11/4093 ,  H03K19/0175 ,  G11C11/401 ,  G11C11/419 ,  G11C16/26 ,  G11C11/41 ,  G11C11/4063 ,  G11C11/413 ,  G11C11/417 ,  G11C16/06 ,  G11C16/32 ,  G06F3/06

Abstract: In an integrated circuit component having a command interface to receive commands, a data interface to receive write data during a write-data reception interval, and first and second registers, control circuitry within the integrated circuit component responds to one or more of the commands by storing within the first register and the second register, respectively, a first control value that specifies a first termination to be applied to the data interface during the write-data reception interval, and a second control value that specifies a second termination to be applied to the data interface after the write-data reception interval transpires.

公开(公告)号：US20220084571A1

公开(公告)日：2022-03-17

申请号：US17305654

申请日：2021-07-12

Applicant: Rambus Inc.

Inventor： Bret Stott ,  Frederick A. Ware ,  Ian P. Shaeffer ,  Yuanlong Wang

IPC: G11C7/22 ,  G06F13/16 ,  G11C7/02

Abstract: A memory controller includes an interface to receive a data strobe signal and corresponding read data. The data strobe signal and the read data correspond to a read command issued by the memory controller, and the read data is received in accordance with the data strobe signal and an enable signal. A circuit in the memory controller is to dynamically adjust a timing offset between the enable signal and the data strobe signal, and control logic is to issue a supplemental read command in accordance with a determination that a time interval since a last read command issued by the memory controller exceeds a predetermined value.

公开(公告)号：US11062748B2

公开(公告)日：2021-07-13

申请号：US16459330

申请日：2019-07-01

Applicant: Rambus Inc.

Inventor： Bret Stott ,  Frederick A. Ware ,  Ian P. Shaeffer ,  Yuanlong Wang

IPC: G11C7/22 ,  G06F13/16 ,  G11C7/02

Abstract: A memory controller includes an interface to receive a data strobe signal and corresponding read data. The data strobe signal and the read data correspond to a read command issued by the memory controller, and the read data is received in accordance with the data strobe signal and an enable signal. A circuit in the memory controller is to dynamically adjust a timing offset between the enable signal and the data strobe signal, and control logic is to issue a supplemental read command in accordance with a determination that a time interval since a last read command issued by the memory controller exceeds a predetermined value.