公开(公告)号：US06825502B2

公开(公告)日：2004-11-30

申请号：US10417873

申请日：2003-04-17

申请人： Haruhiko Okazaki ,  Hideto Sugawara

发明人： Haruhiko Okazaki ,  Hideto Sugawara

IPC分类号： H01L3300

CPC分类号： H01L33/40 ,  H01L24/73 ,  H01L33/32 ,  H01L33/405 ,  H01L2224/05001 ,  H01L2224/05023 ,  H01L2224/0508 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/16145 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01019 ,  H01L2924/12041 ,  H01L2924/3025 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45099

摘要： An InGaN active layer is formed on a sapphire substrate. A p-side electrode is formed on the InGaN active layer to supply an electric current to this InGaN active layer. The p-side electrode includes {circle around (1)} an Ni layer for forming an ohmic contact with a p-GaN layer, {circle around (2)} an Mo layer having a barrier function of preventing diffusion of impurities, {circle around (3)} an Al layer as a high-reflection electrode, {circle around (4)} a Ti layer having a barrier function, and {circle around (5)} an Au layer for improving the contact with a submount on a lead frame. The p-side electrode having this five-layered structure realizes an ohmic contact and high reflectance at the same time.

摘要翻译： 在蓝宝石衬底上形成InGaN有源层。 在InGaN有源层上形成p侧电极，以向该InGaN有源层提供电流。 p侧电极包括{圆周（1是用于与p-GaN层形成欧姆接触的Ni层，{圆周（2个具有阻止杂质扩散的阻挡功能的Mo层，{周围（3个 Al层作为高反射电极{圆周（4个具有阻挡功能的Ti层）和{圆周（5个Au层，用于改善与引线框架上的基座的接触的Au层，具有该反射电极的p侧电极 五层结构同时实现欧姆接触和高反射率。

公开(公告)号：US06693307B2

公开(公告)日：2004-02-17

申请号：US10012106

申请日：2001-11-02

申请人： Hideto Sugawara ,  Koichi Nitta

发明人： Hideto Sugawara ,  Koichi Nitta

IPC分类号： H01L3300

CPC分类号： H01L33/32 ,  H01L33/30

摘要： In a light emitting element using nitride compound semiconductors, an active layer made of a mixed crystal containing In additionally contains at least Al or B as a component of the mixed crystal to improve the thermal resistance of the crystal and the reliability of the element characteristics. Thus, the semiconductor light emitting element has a sufficient lifetime and permits the emission wavelength to be freely selected from a wider wavelength range including blue, green and orange.

摘要翻译： 在使用氮化物化合物半导体的发光元件中，含有In的混合晶体的有源层至少包含Al或B作为混晶的成分，以提高晶体的热阻和元件特性的可靠性。 因此，半导体发光元件具有足够的寿命，并且可以从包括蓝色，绿色和橙色的较宽波长范围自由地选择发射波长。

公开(公告)号：US06320207B1

公开(公告)日：2001-11-20

申请号：US08844616

申请日：1997-04-21

申请人： Chisato Furukawa ,  Masayuki Ishikawa ,  Hideto Sugawara ,  Kenji Isomoto

发明人： Chisato Furukawa ,  Masayuki Ishikawa ,  Hideto Sugawara ,  Kenji Isomoto

IPC分类号： H01L3300

CPC分类号： H01L33/325 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0251 ,  H01L21/0254 ,  H01L21/0262

摘要： A light emitting device has an N-type gallium nitride system compound semiconductor layer provided on a substrate; and a P-type gallium nitride system compound semiconductor layer provided on said N-type gallium nitride system compound semiconductor layer. The N-type gallium nitride compound semiconductor layer has such an area that an impurity concentration increases corresponding to a layer thickness from the side of said substrate.

摘要翻译： 发光器件具有设置在基板上的N型氮化镓系化合物半导体层; 以及设置在所述N型氮化镓系化合物半导体层上的P型氮化镓系化合物半导体层。 N型氮化镓系化合物半导体层具有从基板一侧的层厚度的杂质浓度增加的面积。

公开(公告)号：US06221684B1

公开(公告)日：2001-04-24

申请号：US09457331

申请日：1999-12-09

申请人： Hideto Sugawara ,  Masayuki Ishikawa

发明人： Hideto Sugawara ,  Masayuki Ishikawa

IPC分类号： H01L2100

CPC分类号： H01S5/32 ,  H01L33/04 ,  H01L33/145 ,  H01L33/20 ,  H01L33/32 ,  H01L33/325 ,  H01L33/42

摘要： An n-cap layer is formed on a top surface of p-type clad layers, the p-type clad layer is a top layer of a stacked structure having a pn-junction for emitting carriers into light-emitting region of a GaN based light-emitting device, thus increasing the activation ratio of acceptor impurities in the p-type clad layers. The n-cap layer is used also as a current blocking layer, thereby constructing a current-blocked structure. The n-cap layer should preferably be made of InuAlvGa1−u−vN (0

摘要翻译： 在p型覆盖层的顶表面上形成n盖层，p型覆盖层是具有用于将载流子发射到GaN基光的发光区域的pn结的层叠结构的顶层 从而增加p型覆层中受主杂质的活化率。 n帽层也用作电流阻挡层，从而构成电流阻挡结构。 n帽层应优选由厚度为1.0微米以上的InuAlvGa1-u-vN（0

公开(公告)号：US06204084B1

公开(公告)日：2001-03-20

申请号：US09247091

申请日：1999-02-09

申请人： Lisa Sugiura ,  Mariko Suzuki ,  Kazuhiko Itaya ,  Hidetoshi Fujimoto ,  Johji Nishio ,  John Rennie ,  Hideto Sugawara

发明人： Lisa Sugiura ,  Mariko Suzuki ,  Kazuhiko Itaya ,  Hidetoshi Fujimoto ,  Johji Nishio ,  John Rennie ,  Hideto Sugawara

IPC分类号： H01L2100

CPC分类号： H01L33/325 ,  B82Y20/00 ,  H01L33/025 ,  H01S5/32341 ,  H01S5/34333

摘要： The present invention provides a nitride system semiconductor device which decreases in cost and improves productivity without heat treatment after the growth and which increases lifetime and reliability by enhancing the quality of a p-type conductive layer, and a method for manufacturing the nitride system semiconductor device. The nitride system semiconductor device has a multilayer structure of an n-type InxGayAlzB1-x-y-zNmPnAs1-m-n (0≦x, 0≦y 0≦z, 0≦x+y+z≦1, 0

摘要翻译： 本发明提供了一种氮化物系半导体器件，其成本降​​低并且在生长后不进行热处理而提高生产率，并且通过提高p型导电层的质量而增加寿命和可靠性，以及用于制造氮化物系半导体器件的方法 。 氮化物系半导体器件具有n型In x Ga y Al z B 1-xy-z N m P n As 1-m n（0 <= x，0 <= y 0 <= z，0 <= x + y + z < m，0 <= n，0

公开(公告)号：US6017807A

公开(公告)日：2000-01-25

申请号：US60068

申请日：1998-04-15

申请人： Chisato Furukawa ,  Masayuki Ishikawa ,  Hideto Sugawara ,  Kenji Isomoto

发明人： Chisato Furukawa ,  Masayuki Ishikawa ,  Hideto Sugawara ,  Kenji Isomoto

IPC分类号： H01L21/205 ,  H01L33/06 ,  H01L33/32 ,  H01L33/36 ,  H01L31/18

CPC分类号： H01L33/325 ,  H01L33/007

摘要： After p-type gallium nitride compound semiconductor layers, to which p-type impurity is added, are formed by virtue of chemical vapor deposition, the p-type gallium nitride compound semiconductor layers are thermally annealed at more than 400.degree. C. or more than 700.degree. C. while supplying a flow of an inert gas in parallel to a substrate surface at a predetermined flow rate or more. Otherwise, the p-type gallium nitride compound semiconductor layers are thermally annealed at more than 400.degree. C. or more than 700.degree. C. in an inert gas atmosphere having a predetermined pressure or more. According to the annealing process, the p-type impurity can be more effectively activated, so that p-type gallium nitride compound semiconductor layers which have fewer crystal defects, etc. and have lower resistivity can be formed.

摘要翻译： 在通过化学气相沉积形成p型杂质的p型氮化镓化合物半导体层之后，p型氮化镓系化合物半导体层在400℃以上热退火， 同时以预定的流速或更多的流量平行于衬底表面供应惰性气体流。 否则，在具有预定压力或更大压力的惰性气体气氛中，p型氮化镓化合物半导体层在大于400℃或高于700℃下热退火。 根据退火处理，可以更有效地激活p型杂质，从而可以形成具有较少的晶体缺陷等并且具有较低电阻率的p型氮化镓化合物半导体层。

公开(公告)号：US5696389A

公开(公告)日：1997-12-09

申请号：US402659

申请日：1995-03-13

申请人： Masayuki Ishikawa ,  Hideto Sugawara ,  Yukie Nishikawa ,  Masaaki Onomura ,  Shinji Saito ,  Peter James Parbrook ,  Genichi Hatakoshi ,  Koichi Nitta ,  John Rennie ,  Hiroaki Yoshida ,  Atsushi Kamata

发明人： Masayuki Ishikawa ,  Hideto Sugawara ,  Yukie Nishikawa ,  Masaaki Onomura ,  Shinji Saito ,  Peter James Parbrook ,  Genichi Hatakoshi ,  Koichi Nitta ,  John Rennie ,  Hiroaki Yoshida ,  Atsushi Kamata

IPC分类号： H01L27/15 ,  H01L33/06 ,  H01L33/08 ,  H01L33/10 ,  H01L33/16 ,  H01L33/20 ,  H01L33/28 ,  H01L33/32 ,  H01L33/38 ,  H01L33/40 ,  H01L33/56 ,  H01S5/042 ,  H01S5/183 ,  H01S5/40 ,  H01L29/41 ,  H01S3/19

CPC分类号： H01L33/38 ,  B82Y20/00 ,  H01L33/20 ,  H01S5/18341 ,  H01L27/153 ,  H01L33/0079 ,  H01L33/145 ,  H01L33/382 ,  H01S2301/203 ,  H01S5/0422 ,  H01S5/0425 ,  H01S5/1835 ,  H01S5/347 ,  H01S5/4087

摘要： A light-emitting semiconductor device comprising an n-type cladding layer provided on a surface of a substrate and having concentric first and second parts, a first electrode mounted on the first part of the n-type cladding layer, a p-type cladding layer provided above the surface of the substrate and surrounding the first electrode and the second part of the n-type cladding layer, and a second electrode provided on the p-type cladding layer.

摘要翻译： 一种发光半导体器件，包括设置在基板的表面上并具有同心的第一和第二部分的n型覆层，安装在n型覆层的第一部分上的第一电极，p型覆层 设置在基板的表面上并且包围n型包覆层的第一电极和第二部分，以及设置在p型覆层上的第二电极。

公开(公告)号：US5459746A

公开(公告)日：1995-10-17

申请号：US128139

申请日：1993-09-29

申请人： Kazuhiko Itaya ,  Hideto Sugawara

发明人： Kazuhiko Itaya ,  Hideto Sugawara

IPC分类号： H01L21/205 ,  H01L33/10 ,  H01L33/30 ,  H01L33/44 ,  H01S5/00 ,  H01S5/042 ,  H01S5/183 ,  H01S5/323 ,  H01S3/18

CPC分类号： H01S5/18308 ,  H01S5/0421 ,  H01S5/3211 ,  H01S5/32325

摘要： A surface emission type semiconductor light-emitting device includes a substrate, a distributed Bragg reflector formed on the substrate, a light-emitting region formed on the distributed Bragg reflector, a first contact layer, formed on a portion of the light-emitting region and transparent to a wavelength of light emitted from the light-emitting region, for supplying a current to the light-emitting region, and a second contact layer, formed on the light-emitting region to cover a side portion of the first contact layer, for forming a current blocking barrier between the light-emitting region and the second contact layer and supplying the current to the first contact layer.

摘要翻译： 表面发射型半导体发光器件包括衬底，形成在衬底上的分布布拉格反射器，形成在分布式布拉格反射器上的发光区域，形成在发光区域的一部分上的第一接触层和 对于从发光区域发射的光的波长透明，用于向发光区域提供电流;以及第二接触层，形成在发光区域上以覆盖第一接触层的侧部，用于 在所述发光区域和所述第二接触层之间形成电流阻挡屏障，并将电流供应到所述第一接触层。

公开(公告)号：US5321712A

公开(公告)日：1994-06-14

申请号：US10844

申请日：1993-01-29

申请人： Kazuhiko Itaya ,  Koichi Nitta ,  Genichi Hatakoshi ,  Yukie Nishikawa ,  Hideto Sugawara ,  Mariko Suzuki

发明人： Kazuhiko Itaya ,  Koichi Nitta ,  Genichi Hatakoshi ,  Yukie Nishikawa ,  Hideto Sugawara ,  Mariko Suzuki

IPC分类号： H01L33/12 ,  H01L33/14 ,  H01L33/30 ,  H01S5/00 ,  H01S5/042 ,  H01S5/223 ,  H01S5/30 ,  H01S5/32 ,  H01S5/323 ,  H01S3/19

CPC分类号： H01L33/30 ,  H01S5/32308 ,  H01S5/223 ,  H01S5/2231 ,  H01S5/3086 ,  H01S5/321 ,  H01S5/3211 ,  H01S5/32325

摘要： A semiconductor light-emitting element includes a semiconductor substrate of a first conductivity type, a lower cladding layer formed on the semiconductor substrate and constituted by an InGaAlP-based compound of the first conductivity type, an active layer formed on the lower cladding layer, and constituted by a material selected from the group consisting of GaAs, GaAlAs, and InGaAs, and an upper cladding layer formed on the active layer, and constituted by the InGaAlP-based compound of a second conductivity type, wherein the InGaAlP-based compound is represented by a formula In.sub.y (Ga.sub.1-x Al.sub.x).sub.y P, where x is in the range of 0.3 to 0.7 and y is in the range of 0.45 to 0.55.

摘要翻译： 半导体发光元件包括第一导电类型的半导体衬底，形成在半导体衬底上并由第一导电类型的InGaAlP基化合物构成的下包层，形成在下敷层上的有源层，以及 由选自GaAs，GaAlAs和InGaAs的材料构成，以及形成在有源层上的上覆层，由第二导电类型的InGaAlP基化合物构成，其中以InGaAlP为基础的化合物被表示 通过式Iny（Ga1-xAlx）yP，其中x在0.3至0.7的范围内，y在0.45至0.55的范围内。