公开(公告)号：US20170250201A1

公开(公告)日：2017-08-31

申请号：US15592599

申请日：2017-05-11

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Jun KOYAMA ,  Hiroyuki MIYAKE

IPC: H01L27/12 ,  H01L29/786

CPC classification number: H01L27/1225 ,  H01L21/02603 ,  H01L27/0883 ,  H01L27/1251 ,  H01L27/127 ,  H01L27/1288 ,  H01L29/045 ,  H01L29/24 ,  H01L29/7869 ,  H01L29/78693 ,  H01L29/78696

Abstract: An oxide semiconductor layer which is intrinsic or substantially intrinsic and includes a crystalline region in a surface portion of the oxide semiconductor layer is used for the transistors. An intrinsic or substantially intrinsic semiconductor from which an impurity which is to be an electron donor (donor) is removed from an oxide semiconductor and which has a larger energy gap than a silicon semiconductor is used. Electrical characteristics of the transistors can be controlled by controlling the potential of a pair of conductive films which are provided on opposite sides from each other with respect to the oxide semiconductor layer, each with an insulating film arranged therebetween, so that the position of a channel formed in the oxide semiconductor layer is determined.

公开(公告)号：US20170163047A1

公开(公告)日：2017-06-08

申请号：US15434832

申请日：2017-02-16

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Jun KOYAMA

IPC: H02J7/00

Abstract: The versatility of a power feeding device is improved. A power storage system includes a power storage device and a power feeding device. The power storage device includes data for identifying the power storage device. The power storage device includes a power storage unit, a switch that controls whether power from the power feeding device is supplied to the power storage unit, and a control circuit having a function of controlling a conduction state of the switch in accordance with a control signal input from the power feeding device. The power feeding device includes a signal generation circuit having a function of identifying the power storage device by the data input from the power storage device, generating the control signal corresponding to the identified power storage device, and outputting the generated control signal to the power storage device.

公开(公告)号：US20170004788A1

公开(公告)日：2017-01-05

申请号：US15264014

申请日：2016-09-13

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Ryo ARASAWA ,  Jun KOYAMA ,  Masashi TSUBUKU ,  Kosei NODA

IPC: G09G3/36 ,  H01L27/12 ,  G02F1/1343 ,  G02F1/1368 ,  G02F1/1335

CPC classification number: G09G3/3614 ,  G02F1/133553 ,  G02F1/13439 ,  G02F1/1368 ,  G02F2201/123 ,  G02F2202/10 ,  G09G3/3648 ,  G09G3/3677 ,  G09G2300/08 ,  G09G2310/0286 ,  G09G2310/08 ,  G09G2330/021 ,  H01L21/02164 ,  H01L21/02266 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/467 ,  H01L21/477 ,  H01L27/1225 ,  H01L27/1255 ,  H01L29/24 ,  H01L29/42356 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/78648 ,  H01L29/7869

Abstract: In a liquid crystal display device including a plurality of pixels in a display portion and configured to performed display in a plurality of frame periods, each of the frame periods includes a writing period and a holding period, and after an image signal is input to each of the plurality of pixels in the writing period, a transistor included in each of the plurality of pixels is turned off and the image signal is held for at least 30 seconds in the holding period. The pixel includes a semiconductor layer including an oxide semiconductor layer, and the oxide semiconductor layer has a carrier concentration of less than 1×1014/cm3.

Abstract translation: 在包括显示部分中的多个像素并且被配置为在多个帧周期中进行显示的液晶显示装置中，每个帧周期包括写入周期和保持周期，并且在将图像信号输入到每个 在所述写入周期中的所述多个像素中，包括在所述多个像素中的每一个中的晶体管被​​截止，并且所述图像信号在所述保持周期中保持至少30秒。 像素包括具有氧化物半导体层的半导体层，氧化物半导体层的载流子浓度小于1×10 14 / cm 3。

公开(公告)号：US20160365040A1

公开(公告)日：2016-12-15

申请号：US15249615

申请日：2016-08-29

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Jun KOYAMA ,  Yoshiharu HIRAKATA

IPC: G09G3/34 ,  G02F1/1343 ,  G02F1/1335 ,  G02F1/1337 ,  G09G3/20 ,  G09G3/36

CPC classification number: G09G3/3413 ,  G02F1/133345 ,  G02F1/1334 ,  G02F1/133514 ,  G02F1/133555 ,  G02F1/1337 ,  G02F1/134309 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/133302 ,  G02F2201/121 ,  G02F2201/123 ,  G02F2203/01 ,  G02F2203/04 ,  G09G3/2003 ,  G09G3/3406 ,  G09G3/3677 ,  G09G2300/0426 ,  G09G2310/0237 ,  G09G2310/08 ,  G09G2320/0247 ,  G09G2320/0261 ,  G09G2320/064 ,  G09G2320/0646 ,  G09G2320/103 ,  G09G2330/021 ,  G09G2330/022

Abstract: An object is to provide a liquid crystal display device which can recognize image display even when the liquid crystal display device is used in a dim environment. In one pixel, a pixel electrode including both of a region where incident light through a liquid crystal layer is reflected and a transmissive region is provided, and image display can be performed in both modes: the reflective mode where external light is used as an illumination light source; and the transmissive mode where the backlight is used as an illumination light source. When there is external light with insufficient brightness, that is, in a dim environment, the backlight emits weak light and an image is displayed in the reflective mode, whereby image display can be performed.

Abstract translation: 本发明的目的是提供一种液晶显示装置，即使在液晶显示装置在昏暗的环境中使用时也能够识别图像显示。 在一个像素中，包括反射通过液晶层的入射光的区域和设置有透射区域的像素电极的像素电极，并且可以以两种模式执行图像显示：将外部光用作照明的反射模式 光源; 以及将背光用作照明光源的透射模式。 当存在亮度不足的外部光，即，在昏暗的环境中，背光发出弱光，并且以反射模式显示图像，由此可以执行图像显示。

公开(公告)号：US20160358950A1

公开(公告)日：2016-12-08

申请号：US15243209

申请日：2016-08-22

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Jun KOYAMA ,  Junichiro SAKATA ,  Tetsunori MARUYAMA ,  Yuki IMOTO ,  Yuji ASANO ,  Junichi KOEZUKA

IPC: H01L27/12 ,  H01L49/02 ,  H01L29/786 ,  H01L29/24

CPC classification number: H01L27/1255 ,  H01L27/12 ,  H01L27/1225 ,  H01L27/127 ,  H01L28/20 ,  H01L29/24 ,  H01L29/78606 ,  H01L29/7869

Abstract: The silicon nitride layer 910 formed by plasma CVD using a gas containing a hydrogen compound such as silane (SiH4) and ammonia (NH3) is provided on and in direct contact with the oxide semiconductor layer 905 used for the resistor 354, and the silicon nitride layer 910 is provided over the oxide semiconductor layer 906 used for the thin film transistor 355 with the silicon oxide layer 909 serving as a barrier layer interposed therebetween. Therefore, a higher concentration of hydrogen is introduced into the oxide semiconductor layer 905 than into the oxide semiconductor layer 906. As a result, the resistance of the oxide semiconductor layer 905 used for the resistor 354 is made lower than that of the oxide semiconductor layer 906 used for the thin film transistor 355.

Abstract translation: 通过使用含有氢化合物如硅烷（SiH 4）和氨（NH 3）的气体的等离子体CVD形成的氮化硅层910设置在与用于电阻器354的氧化物半导体层905上并直接接触，并且氮化硅 在用于薄膜晶体管355的氧化物半导体层906上设置层910，氧化硅层909用作阻挡层。 因此，与氧化物半导体层906相比，在氧化物半导体层905中引入更高浓度的氢。结果，使用于电阻器354的氧化物半导体层905的电阻比氧化物半导体层的电阻低 906用于薄膜晶体管355。

公开(公告)号：US20160336355A1

公开(公告)日：2016-11-17

申请号：US15223079

申请日：2016-07-29

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Hiroyuki MIYAKE ,  Hideaki SHISHIDO ,  Jun KOYAMA ,  Daisuke MATSUBAYASHI ,  Keisuke MURAYAMA

IPC: H01L27/12 ,  G02F1/1343 ,  G02F1/1362 ,  H01L29/786 ,  G02F1/1368

CPC classification number: H01L27/1255 ,  G02F1/1339 ,  G02F1/134363 ,  G02F1/13454 ,  G02F1/13458 ,  G02F1/136204 ,  G02F1/136209 ,  G02F1/136213 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/134372 ,  G02F2201/121 ,  G02F2201/123 ,  G02F2201/40 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/3265 ,  H01L29/7869

Abstract: To provide a semiconductor device including a capacitor whose charge capacity is increased without reducing the aperture ratio. The semiconductor device includes a transistor including a light-transmitting semiconductor film, a capacitor where a dielectric film is provided between a pair of electrodes, an insulating film provided over the light-transmitting semiconductor film, and a light-transmitting conductive film provided over the insulating film. In the capacitor, a metal oxide film containing at least indium (In) or zinc (Zn) and formed on the same surface as the light-transmitting semiconductor film in the transistor serves as one electrode, the light-transmitting conductive film serves as the other electrode, and the insulating film provided over the light-transmitting semiconductor film serves as the dielectric film.

Abstract translation: 提供一种包括电容器的半导体器件，其电容量增加而不降低开口率。 半导体器件包括：晶体管，包括透光半导体膜，电容器，其中电介质膜设置在一对电极之间;绝缘膜设置在透光半导体膜上;以及透光导电膜， 绝缘膜。 在电容器中，与晶体管中的透光性半导体膜相同的表面上形成至少含有铟（In）或锌（Zn）的金属氧化物膜作为一个电极，透光性导电膜作为 设置在透光半导体膜上的绝缘膜用作电介质膜。

公开(公告)号：US20160284289A1

公开(公告)日：2016-09-29

申请号：US15176521

申请日：2016-06-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Jun KOYAMA

IPC: G09G3/36 ,  H01L27/12 ,  H01L29/786 ,  G09G3/20

CPC classification number: G09G3/3607 ,  G09G3/2011 ,  G09G3/2025 ,  G09G3/2081 ,  G09G3/3614 ,  G09G3/3648 ,  G09G3/3659 ,  G09G2300/0426 ,  G09G2300/043 ,  G09G2300/0478 ,  G09G2300/0491 ,  G09G2310/0251 ,  G09G2310/027 ,  G09G2310/0289 ,  G09G2320/0247 ,  G09G2320/0257 ,  H01L27/1222 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/1285 ,  H01L29/78633 ,  H01L29/78675

Abstract: An object of the present invention is to provide a small-sized active matrix type liquid crystal display device that may achieve large-sized display, high precision, high resolution and multi-gray scales. According to the present invention, gray scale display is performed by combining time ratio gray scale and voltage gray scale in a liquid crystal display device which performs display in OCB mode. In doing so, one frame is divided into subframes corresponding to the number of bit for the time ratio gray scale. Initialize voltage is applied onto the liquid crystal upon display of a subframe.

公开(公告)号：US20160233252A1

公开(公告)日：2016-08-11

申请号：US15098787

申请日：2016-04-14

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Jun KOYAMA ,  Shunpei YAMAZAKI

IPC: H01L27/12 ,  H01L27/146

CPC classification number: H01L27/1225 ,  H01L27/102 ,  H01L27/1203 ,  H01L27/1214 ,  H01L27/14612 ,  H01L27/14616 ,  H01L27/14627 ,  H01L27/14632 ,  H01L27/14643 ,  H01L29/78693 ,  H01L31/095 ,  H04N5/37457

Abstract: A solid-state image sensor which holds a potential for a long time and includes a thin film transistor with stable electrical characteristics is provided. When the off-state current of a thin film transistor including an oxide semiconductor layer is set to 1×10−13 A or less and the thin film transistor is used as a reset transistor and a transfer transistor of the solid-state image sensor, the potential of the signal charge storage portion is kept constant, so that a dynamic range can be improved. When a silicon semiconductor which can be used for a complementary metal oxide semiconductor is used for a peripheral circuit, a high-speed semiconductor device with low power consumption can be manufactured.

公开(公告)号：US20160232868A1

公开(公告)日：2016-08-11

申请号：US15134937

申请日：2016-04-21

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Ryo ARASAWA ,  Jun KOYAMA ,  Masashi TSUBUKU ,  Kosei NODA

IPC: G09G3/36 ,  H01L27/12 ,  H01L29/423 ,  H01L29/45 ,  H01L29/66 ,  H01L29/24 ,  H01L21/467 ,  H01L21/477 ,  H01L29/786 ,  H01L21/02

CPC classification number: G09G3/3614 ,  G02F1/133553 ,  G02F1/13439 ,  G02F1/1368 ,  G02F2201/123 ,  G02F2202/10 ,  G09G3/3648 ,  G09G3/3677 ,  G09G2300/08 ,  G09G2310/0286 ,  G09G2310/08 ,  G09G2330/021 ,  H01L21/02164 ,  H01L21/02266 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/467 ,  H01L21/477 ,  H01L27/1225 ,  H01L27/1255 ,  H01L29/24 ,  H01L29/42356 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/78648 ,  H01L29/7869

Abstract: In a liquid crystal display device including a plurality of pixels in a display portion and configured to performed display in a plurality of frame periods, each of the frame periods includes a writing period and a holding period, and after an image signal is input to each of the plurality of pixels in the writing period, a transistor included in each of the plurality of pixels is turned off and the image signal is held for at least 30 seconds in the holding period. The pixel includes a semiconductor layer including an oxide semiconductor layer, and the oxide semiconductor layer has a carrier concentration of less than 1×1014/cm3.

Abstract translation: 在包括显示部分中的多个像素并且被配置为在多个帧周期中进行显示的液晶显示装置中，每个帧周期包括写入周期和保持周期，并且在将图像信号输入到每个 在所述写入周期中的所述多个像素中，包括在所述多个像素中的每一个中的晶体管被​​截止，并且所述图像信号在所述保持周期中保持至少30秒。 像素包括具有氧化物半导体层的半导体层，氧化物半导体层的载流子浓度小于1×10 14 / cm 3。

公开(公告)号：US20160163742A1

公开(公告)日：2016-06-09

申请号：US15016451

申请日：2016-02-05

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Jun KOYAMA ,  Kiyoshi KATO

IPC: H01L27/12 ,  H01L29/417 ,  H01L29/423 ,  H01L29/786

CPC classification number: H01L27/1225 ,  H01L27/1156 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/78645 ,  H01L29/7869 ,  H01L29/788

Abstract: A semiconductor device includes an oxide layer, a source electrode layer in contact with the oxide layer, a first drain electrode layer in contact with the oxide layer, a second drain electrode layer in contact with the oxide layer, a gate insulating film in contact with the oxide layer, a first gate electrode layer overlapping with the source electrode layer and the first drain electrode layer and overlapping with a top surface of the oxide layer with the gate insulating film interposed therebetween, a second gate electrode layer overlapping with the source electrode layer and the second drain electrode layer and overlapping with the top surface of the oxide layer with the gate insulating film interposed therebetween, and a third gate electrode layer overlapping with a side surface of the oxide layer with the gate insulating film interposed therebetween.

Abstract translation: 半导体器件包括氧化物层，与氧化物层接触的源极电极层，与氧化物层接触的第一漏极电极层，与氧化物层接触的第二漏极电极层，与氧化物层接触的栅极绝缘膜 所述氧化物层与所述源极电极层和所述第一漏极电极层重叠并与所述氧化物层的顶表面重叠的第一栅极电极层与所述栅极绝缘膜插入其间，与所述源极电极层重叠的第二栅电极层 所述第二漏极电极层与所述氧化物层的顶面重叠，并且所述栅极绝缘膜与所述第二漏极电极层重叠，并且所述第三栅极电极层与所述氧化物层的侧面重叠，并且所述栅极绝缘膜插入其间。