Semiconductor device and manufacturing method thereof, delamination method, and transferring method
    88.
    发明授权
    Semiconductor device and manufacturing method thereof, delamination method, and transferring method 有权
    半导体装置及其制造方法,分层方法和转印方法

    公开(公告)号:US07723209B2

    公开(公告)日:2010-05-25

    申请号:US10740501

    申请日:2003-12-22

    IPC分类号: H01L21/84 H01L21/46

    摘要: A technique for forming a TFT element over a substrate having flexibility typified by a flexible plastic film is tested. When a structure in which a light-resistant layer or a reflective layer is employed to prevent the damage to the delamination layer, it is difficult to fabricate a transmissive liquid crystal display device or a light emitting device which emits light downward.A substrate and a delamination film are separated by a physical means, or a mechanical means in a state where a metal film formed over a substrate, and a delamination layer comprising an oxide film including the metal and a film comprising silicon, which is formed over the metal film, are provided. Specifically, a TFT obtained by forming an oxide layer including the metal over a metal film; crystallizing the oxide layer by heat treatment; and performing delamination in a layer of the oxide layer or at both of the interface of the oxide layer is formed.

    摘要翻译: 测试了以柔性塑料膜为代表的柔性基板上形成TFT元件的技术。 当采用耐光层或反射层来防止对分层的损害的结构时,难以制造向下发光的透射型液晶显示装置或发光装置。 在基板上形成金属膜的状态下,通过物理手段或机械装置分离基板和分层膜,以及包含包含金属的氧化物膜和包含硅的膜的分层,其形成在 提供金属膜。 具体地说,通过在金属膜上形成包含金属的氧化物层而获得的TFT; 通过热处理使氧化层结晶; 并且在氧化物层的一层或氧化物层的界面上形成分层。

    Light Emitting Device, Semiconductor Device, and Method of Fabricating the Devices
    89.
    发明申请
    Light Emitting Device, Semiconductor Device, and Method of Fabricating the Devices 有权
    发光器件,半导体器件和器件制造方法

    公开(公告)号:US20090302339A1

    公开(公告)日:2009-12-10

    申请号:US12430609

    申请日:2009-04-27

    IPC分类号: H01L33/00

    摘要: A semiconductor device in which degradation due to permeation of water and oxygen can be limited, e.g., a light emitting device having an organic light emitting device (OLED) formed on a plastic substrate, and a liquid crystal display using a plastic substrate. A layer to be debonded, containing elements, is formed on a substrate, bonded to a supporting member, and debonded from the substrate. A thin film is thereafter formed on the debonded layer. The debonded layer with the thin film is adhered to a transfer member. Cracks caused in the debonded layer at the time of debonding are thereby repaired. As the thin film in contact with the debonded layer, a film having thermal conductivity, e.g., film of aluminum nitride or aluminum nitroxide is used. This film dissipates heat from the elements and has the effect of preventing deformation and change in quality of the transfer member, e.g., a plastic substrate.

    摘要翻译: 可以限制由于水和氧的渗透引起的劣化的半导体器件,例如具有在塑料基板上形成的有机发光器件(OLED)的发光器件和使用塑料基板的液晶显示器。 在基板上形成包含元件的要剥离的层,结合到支撑构件上,并从基板脱粘。 此后在脱粘层上形成薄膜。 具有薄膜的脱粘层粘附到转印部件上。 因此,在脱粘时在脱粘层中引起的裂纹被修复。 作为与剥离层接触的薄膜,使用具有导热性的膜,例如氮化铝或氮氧化铝的膜。 这种膜从元件中散热,并且具有防止转印构件例如塑料基板的变形和质量变化的效果。

    Method of fabricating a semiconductor device having a film in contact with a debonded layer
    90.
    发明授权
    Method of fabricating a semiconductor device having a film in contact with a debonded layer 有权
    制造具有与剥离层接触的膜的半导体器件的方法

    公开(公告)号:US07534700B2

    公开(公告)日:2009-05-19

    申请号:US11201087

    申请日:2005-08-11

    IPC分类号: H01L21/46 H01L21/30

    摘要: A semiconductor device in which degradation due to permeation of water and oxygen can be limited, e.g., a light emitting device having an organic light emitting device (OLED) formed on a plastic substrate, and a liquid crystal display using a plastic substrate. A layer to be debonded, containing elements, is formed on a substrate, bonded to a supporting member, and debonded from the substrate. A thin film is thereafter formed on the debonded layer. The debonded layer with the thin film is adhered to a transfer member. Cracks caused in the debonded layer at the time of debonding are thereby repaired. As the thin film in contact with the debonded layer, a film having thermal conductivity, e.g., film of aluminum nitride or aluminum nitroxide is used. This film dissipates heat from the elements and has the effect of preventing deformation and change in quality of the transfer member, e.g., a plastic substrate.

    摘要翻译: 可以限制由于水和氧的渗透引起的劣化的半导体器件,例如具有在塑料基板上形成的有机发光器件(OLED)的发光器件和使用塑料基板的液晶显示器。 在基板上形成包含元件的要剥离的层,结合到支撑构件上,并从基板脱粘。 此后在脱粘层上形成薄膜。 具有薄膜的脱粘层粘附到转印部件上。 因此,在脱粘时在脱粘层中引起的裂纹被修复。 作为与剥离层接触的薄膜,使用具有导热性的膜,例如氮化铝或氮氧化铝的膜。 这种膜从元件中散热,并且具有防止转印构件例如塑料基板的变形和质量变化的效果。