GEOMETRY ENHANCEMENT OF NANOSCALE ENERGY DEPOSITION BY X-RAYS
    81.
    发明申请
    GEOMETRY ENHANCEMENT OF NANOSCALE ENERGY DEPOSITION BY X-RAYS 有权
    由X-RAYS进行的纳米级能量沉积的几何增强

    公开(公告)号:US20150083579A1

    公开(公告)日:2015-03-26

    申请号:US14391003

    申请日:2013-03-15

    Inventor: Ting Guo

    Abstract: A principle is established to show that nanoscale energy deposition in water by X-rays can be greatly enhanced via the geometry of nanostructures. The calculated results show that enhancement over background water can reach over 60 times for a single nanoshell made of gold. Other geometries and nanostructures are investigated, and it is found that a shell of gold nanoparticles can generate similar enhancement. The concepts of composition, matrix, and satellite effects are established and studied, all of which can further increase the enhancement of the effect of X-rays.

    Abstract translation: 建立了一个原理,以显示通过纳米结构的几何形状可以大大增强X射线在水中的纳米级能量沉积。 计算结果表明,对于由金制成的单个纳米壳,背景水的增强可以达到60倍以上。 研究了其他几何形状和纳米结构,并发现金纳米颗粒的壳可以产生类似的增强。 建立和研究了组成,基质和卫星效应的概念,所有这些概念都可以进一步增加X射线效应的增强。

    In-situ generation of the molecular etcher carbonyl fluoride or any of its variants and its use
    82.
    发明授权
    In-situ generation of the molecular etcher carbonyl fluoride or any of its variants and its use 有权
    原位生成分子蚀刻剂羰基氟化物或其任何变体及其用途

    公开(公告)号:US08932406B2

    公开(公告)日:2015-01-13

    申请号:US13831613

    申请日:2013-03-15

    Abstract: The molecular etcher carbonyl fluoride (COF2) or any of its variants, are provided for, according to the present invention, to increase the efficiency of etching and/or cleaning and/or removal of materials such as the unwanted film and/or deposits on the chamber walls and other components in a process chamber or substrate (collectively referred to herein as “materials”). The methods of the present invention involve igniting and sustaining a plasma, whether it is a remote or in-situ plasma, by stepwise addition of additives, such as but not limited to, a saturated, unsaturated or partially unsaturated perfluorocarbon compound (PFC) having the general formula (CyFz) and/or an oxide of carbon (COx) to a nitrogen trifluoride (NF3) plasma into a chemical deposition chamber (CVD) chamber, thereby generating COF2. The NF3 may be excited in a plasma inside the CVD chamber or in a remote plasma region upstream from the CVD chamber. The additive(s) may be introduced upstream or downstream of the remote plasma such that both NF3 and the additive(s) (and any plasma-generated effluents) are present in the CVD chamber during cleaning.

    Abstract translation: 根据本发明,提供分子蚀刻剂碳酰氟(COF 2)或其任何变体,以提高蚀刻和/或清洁和/或去除诸如不需要的膜和/或沉积物之类的材料的效率 处理室或基板(这里统称为“材料”)中的室壁和其它部件。 本发明的方法包括通过逐步添加添加剂,例如但不限于饱和的,不饱和的或部分不饱和的全氟化碳化合物(PFC)来点燃和维持等离子体,无论是远距离还是原位等离子体,其具有 通式(CyFz)和/或碳(COx)与三氟化氮(NF3)等离子体的氧化物进入化学沉积室(CVD)室,从而产生COF 2。 NF 3可以在CVD室内的等离子体中或在CVD室上游的远程等离子体区域中被激发。 添加剂可以被引入远程等离子体的上游或下游,使得NF 3和添加剂(和任何等离子体产生的流出物)在清洁期间都存在于CVD室中。

    Apparatus and method for forming thin-film
    87.
    发明授权
    Apparatus and method for forming thin-film 有权
    用于形成薄膜的设备和方法

    公开(公告)号:US07074548B2

    公开(公告)日:2006-07-11

    申请号:US10376253

    申请日:2003-03-03

    Abstract: A method of forming a thin-film including a capability to remove contaminants from the formed thin-film and/or a substrate on which the thin-film is formed using alcohol. The method includes allowing a substrate holder to support a substract. A first mixture is produced by mixing a condensation polymer containing an element of metal oxide compound and alcohol. Then second mixture is produced by mixing supercritical fluid or liquid carbon dioxide and the first mixture. A thin film is formed by applying the second mixture on a surface of the substrate. After forming the thin-film, the substrate is cleaned by applying alcohol to upper and lower surfaces, preferably the whole upper and lower surfaces, of the substract. The thin-film is crystallized by heating, and the crystallizing may include applying oxygen in a crystallizing chamber. Soft X-rays may be applied to the substrate, during the forming of the thin-film on the surface of the substrate.

    Abstract translation: 一种形成薄膜的方法,该薄膜包括从形成的薄膜和/或使用酒精形成薄膜的基板去除污染物的能力。 该方法包括允许衬底保持器支撑减法。 通过混合含有金属氧化物和醇的元素的缩聚物来制备第一混合物。 然后通过混合超临界流体或液体二氧化碳和第一混合物产生第二混合物。 通过将第二混合物施加到基板的表面上来形成薄膜。 在形成薄膜之后,通过将酒精施加到底部的上表面和下表面,优选整个上表面和下表面来清洁基底。 薄膜通过加热结晶,结晶可以包括在结晶室中施加氧气。 在衬底表面形成薄膜期间,可以将软X射线施加到衬底上。

    Methods and apparatus for materials processing
    89.
    发明授权
    Methods and apparatus for materials processing 失效
    材料加工方法与装置

    公开(公告)号:US06752529B2

    公开(公告)日:2004-06-22

    申请号:US10264217

    申请日:2002-10-03

    Inventor: Richard A. Holl

    Abstract: Methods and apparatus for processing materials employ two cylindrical members, one mounted within the other, defining an annular processing chamber. Preferably, the outer member is stationery (stator), while the inner rotates (rotor). The radial spacing between the stator inner surface and the rotor outer surface is equal to or less than the back-to-back radial thicknesses of the two laminar boundary layers formed on the two surfaces by the material being processed. The surfaces are made smooth, as by buffing to a finish of not more than 10 microinches. This structure inhibits formation of Taylor vortices in the processing passage, which cause unstable flow and consequent incomplete mixing. Preferably, the relative velocity between rotor and stator surfaces is at least 1.2 meters per second. The surfaces may be coated with catalysts. Transducers may be provided to apply processing energy, such as microwave, light or ultrasonic waves, through the stator wall.

    Abstract translation: 用于加工材料的方法和设备采用两个圆柱形构件,一个安装在另一个中,限定环形处理室。 优选地,外部构件是文具(定子),而内部旋转(转子)。 定子内表面和转子外表面之间的径向间距等于或小于被处理材料在两个表面上形成的两个层状边界层的背对背径向厚度。 表面光滑,通过抛光至不超过10微英寸的光洁度。 该结构抑制了处理通道中泰勒涡流的形成,这导致不稳定的流动并导致不完全的混合。 优选地,转子和定子表面之间的相对速度为至少1.2米/秒。 表面可以涂覆有催化剂。 可以提供传感器以通过定子壁施加诸如微波,光或超声波的处理能量。

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