公开(公告)号：US09487865B2

公开(公告)日：2016-11-08

申请号：US14360984

申请日：2012-11-12

Applicant: Tokyo Electron Limited

Inventor： Yuichiro Inatomi ,  Takashi Tanaka ,  Mitsuaki Iwashita

IPC: C23C18/16 ,  C23C18/42 ,  C23C18/54

CPC classification number: C23C18/1678 ,  C23C18/1619 ,  C23C18/1628 ,  C23C18/1632 ,  C23C18/1651 ,  C23C18/1676 ,  C23C18/1682 ,  C23C18/42 ,  C23C18/54

Abstract: A plating apparatus 20 includes a substrate holding device 110 configured to hold a substrate W; a discharging device 21 configured to discharge a plating liquid 35 toward the substrate W held by the substrate holding device 110; and a plating liquid supplying device 30 connected to the discharging device 21 and configured to supply the plating liquid 35 to the discharging device 21. A gas supplying device 170 is configured to heat a heating gas G having a higher specific heat capacity than air and supply the heated heating gas G toward the substrate W held by the substrate holding device 110. Further, a controller 160 is configured to control at least the discharging device 21, the plating liquid supplying device 30, and the gas supplying device 170.

Abstract translation: 电镀装置20包括：基板保持装置110，被配置为保持基板W; 排出装置21，被配置为将电镀液体35朝向由基板保持装置110保持的基板W排出; 以及连接到排出装置21并被配置为将电镀液体35供给到排出装置21的电镀液供给装置30.气体供给装置170构成为对比比热容量高于空气的加热气体G进行加热， 加热的加热气体G朝向由基板保持装置110保持的基板W。此外，控制器160被配置为至少控制排出装置21，电镀液供给装置30和气体供给装置170。

公开(公告)号：US09255331B2

公开(公告)日：2016-02-09

申请号：US14568384

申请日：2014-12-12

Applicant: Tokyo Electron Limited

Inventor： Takashi Tanaka ,  Yusuke Saito ,  Mitsuaki Iwashita

IPC: C23C18/16 ,  C23C18/31 ,  C23C18/38

CPC classification number: C23C18/1628 ,  C23C18/1632 ,  C23C18/1678 ,  C23C18/1682 ,  C23C18/31 ,  C23C18/38

Abstract: An apparatus for a plating process includes: an outer chamber; an inner chamber covered by the outer chamber; a rotatable holding mechanism configured to hold a substrate horizontally and installed in the inner chamber; a fluid supply unit configured to supply a plating solution to a preset position on the substrate; a gas supply device configured to generate a nonreactive gas and control a temperature of the nonreactive gas; a gas supply hole configured to supply the nonreactive gas into the outer chamber and provided in a top surface of the outer chamber; a plurality of gas inlet openings provided at a sidewall of the inner chamber and spaced apart at equal distances; and a rectifying plate disposed above the substrate and below the plurality of gas inlet openings inside the inner chamber, the rectifying plate having a plurality of rectifying holes uniformly disposed in the rectifying plate.

Abstract translation: 一种电镀工艺的装置，包括：外室; 由外室覆盖的内室; 可旋转的保持机构，其构造成水平地保持基板并安装在所述内室中; 流体供给单元，其构造成将电镀液供给到所述基板上的预定位置; 气体供给装置，其构造成产生非反应性气体并控制非反应性气体的温度; 气体供给孔，其构造成将非反应性气体供给到所述外部室，并设置在所述外部室的上表面; 多个气体入口，设置在内腔的侧壁处并以相等的距离隔开; 以及整流板，其设置在所述基板的上方且在所述内部室内的所述多个气体入口的下方，所述整流板具有均匀地配置在所述整流板中的多个整流孔。

公开(公告)号：US20150096490A1

公开(公告)日：2015-04-09

申请号：US14568384

申请日：2014-12-12

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takashi Tanaka ,  Yusuke Saito ,  Mitsuaki Iwashita

IPC: C23C18/16 ,  C23C18/31

CPC classification number: C23C18/1628 ,  C23C18/1632 ,  C23C18/1678 ,  C23C18/1682 ,  C23C18/31 ,  C23C18/38

Abstract: An apparatus for a plating process includes: an outer chamber; an inner chamber covered by the outer chamber; a rotatable holding mechanism configured to hold a substrate horizontally and installed in the inner chamber; a fluid supply unit configured to supply a plating solution to a preset position on the substrate; a gas supply device configured to generate a nonreactive gas and control a temperature of the nonreactive gas; a gas supply hole configured to supply the nonreactive gas into the outer chamber and provided in a top surface of the outer chamber; a plurality of gas inlet openings provided at a sidewall of the inner chamber and spaced apart at equal distances; and a rectifying plate disposed above the substrate and below the plurality of gas inlet openings inside the inner chamber, the rectifying plate having a plurality of rectifying holes uniformly disposed in the rectifying plate.

Abstract translation: 一种电镀工艺的装置，包括：外室; 由外室覆盖的内室; 可旋转的保持机构，其构造成水平地保持基板并安装在所述内室中; 流体供给单元，其构造成将电镀液供给到所述基板上的预定位置; 气体供给装置，其构造成产生非反应性气体并控制非反应性气体的温度; 气体供给孔，其构造成将非反应性气体供给到所述外部室，并设置在所述外部室的上表面; 多个气体入口，设置在内腔的侧壁处并以相等的距离隔开; 以及整流板，其设置在所述基板的上方且在所述内部室内的所述多个气体入口的下方，所述整流板具有均匀地配置在所述整流板中的多个整流孔。

公开(公告)号：US08999432B2

公开(公告)日：2015-04-07

申请号：US12405468

申请日：2009-03-17

Applicant: Takashi Tanaka ,  Yusuke Saito ,  Mitsuaki Iwashita

Inventor： Takashi Tanaka ,  Yusuke Saito ,  Mitsuaki Iwashita

IPC: B05D5/12 ,  B05C11/00 ,  B05B13/04 ,  B05C5/00 ,  C23C18/38 ,  C23C18/16

CPC classification number: C23C18/1628 ,  C23C18/1632 ,  C23C18/1678 ,  C23C18/1682 ,  C23C18/31 ,  C23C18/38

Abstract: A cap metal forming method capable of obtaining a uniform film thickness on the entire surface of a substrate is provided. A method for forming a cap metal on a processing surface of a substrate provided with two or more regions having different water-repellent properties, includes: holding the substrate horizontally by a rotatable holding mechanism installed in an inner chamber; supplying a gas between the inner chamber and an outer chamber covering the inner chamber via a gas supply hole provided in a top surface of the outer chamber; forming a pressure gradient between the inner chamber and the outer chamber; and supplying a plating solution to a preset position on the processing surface of the substrate after a pressure of the gas inside the inner chamber reaches a preset value so as to form the cap metal on at least one of the regions.

Abstract translation: 提供能够在基板的整个表面上获得均匀的膜厚度的盖金属成形方法。 一种在具有不同斥水性的两个以上的区域的基板的加工面上形成盖金属的方法，其特征在于，包括：通过安装在内室中的旋转保持机构水平地保持基板; 通过设置在所述外室的上表面中的气体供给孔，在所述内室和覆盖所述内室的外室之间供给气体; 在所述内室和所述外室之间形成压力梯度; 以及在所述内室中的气体的压力达到预设值之后，将所述电镀溶液供应到所述基板的处理表面上的预定位置，以便在所述至少一个所述区域上形成所述盖金属。

公开(公告)号：US20140273309A1

公开(公告)日：2014-09-18

申请号：US14051287

申请日：2013-10-10

Applicant: Intermolecular, Inc.

Inventor： Sandip Niyogi ,  Sean Barstow ,  Jay Dedontney ,  Chi-I Lang ,  Ratsamee Limdulpaiboon ,  Martin Romero ,  Sunil Shanker ,  James Tsung ,  J. Watanabe

IPC: H01L21/66 ,  H01L21/02

CPC classification number: H01L21/30 ,  B01J19/0046 ,  B01J2219/00283 ,  B01J2219/00286 ,  B01J2219/00301 ,  B01J2219/00313 ,  B01J2219/0038 ,  B01J2219/00382 ,  B01J2219/00416 ,  B01J2219/00418 ,  B01J2219/00527 ,  B01J2219/00585 ,  B08B3/04 ,  C23C14/08 ,  C23C14/22 ,  C23C14/34 ,  C23C18/1619 ,  C23C18/1682 ,  C25D17/02 ,  G11C13/0004 ,  H01L21/02104 ,  H01L21/30604 ,  H01L21/67051 ,  H01L21/67057 ,  H01L21/6719 ,  H01L22/10 ,  H01L22/12 ,  H01L22/14 ,  H01L27/2463 ,  H01L45/1608

Abstract: Remote-plasma treatments of surfaces, for example in semiconductor manufacture, can be improved by preferentially exposing the surface to only a selected subset of the plasma species generated by the plasma source. The probability that a selected species reaches the surface, or that an unselected species is quenched or otherwise converted or diverted before reaching the surface, can be manipulated by introducing additional gases with selected properties either at the plasma source or in the process chamber, varying chamber pressure or flow rate to increase or decrease collisions, or changing the dimensions or geometry of the injection ports, conduits and other passages traversed by the species. Some example processes treat surfaces preferentially with relatively low-energy radicals, vary the concentration of radicals at the surface in real time, or clean and passivate in the same unit process.

Abstract translation: 可以通过优选地将表面暴露于由等离子体源产生的等离子体物质的选定子集中来改善表面的远程等离子体处理，例如在半导体制造中。 所选择的物种到达表面的可能性，或未被选择的物质在到达表面之前被淬灭或以其他方式转化或转移的可能性可以通过在等离子体源或处理室，变化室中引入具有选定性质的附加气体来操纵 压力或流量以增加或减少碰撞，或改变注射口，管道和由物种穿过的其它通道的尺寸或几何形状。 一些示例性过程优先用相对低能量的基团处理表面，实时地改变表面处的自由基的浓度，或者在相同的单元过程中清洁和钝化。

公开(公告)号：US20120263869A1

公开(公告)日：2012-10-18

申请号：US13533692

申请日：2012-06-26

Applicant: Igor C. Ivanov

Inventor： Igor C. Ivanov

IPC: B05D5/00 ,  B05D3/02

CPC classification number: H01L21/76841 ,  B82Y30/00 ,  C23C18/1619 ,  C23C18/1651 ,  C23C18/1682 ,  C23C18/1683 ,  C25D5/08 ,  C25D7/12 ,  C25D17/001 ,  C25D21/10 ,  H01L21/288 ,  H01L21/6715 ,  H01L21/76801 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76834 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76858 ,  H01L21/76864 ,  H01L21/76867 ,  H01L21/76877 ,  H01L23/53238 ,  H01L2924/0002 ,  Y10T428/12 ,  Y10T428/12458 ,  Y10T428/24479 ,  Y10T428/24612 ,  H01L2924/00

Abstract: A method is provided which includes dispensing and removing different deposition solutions during an electroless deposition process to form different sub-films of a composite layer. Another method includes forming a film by an electroless deposition process and subsequently annealing the microelectronic topography to induce diffusion of an element within the film. Yet another method includes reiterating different mechanisms of deposition growth, namely interfacial electroless reduction and chemical adsorption, from a single deposition solution to form different sub-films of a composite layer. A microelectronic topography resulting from one or more of the methods includes a film formed in contact with a structure having a bulk concentration of a first element. The film has periodic successions of regions each comprising a region with a concentration of a second element greater than a set amount and a region with a concentration of the second element less than the set amount.

Abstract translation: 提供了一种方法，其包括在无电沉积工艺期间分配和去除不同的沉积溶液以形成复合层的不同子膜。 另一种方法包括通过无电沉积工艺形成膜，随后退火微电子拓扑以诱导膜内的元素的扩散。 另一种方法包括从单个沉积溶液重复不同的沉积生长机理，即界面无电还原和化学吸附，以形成复合层的不同子膜。 由一种或多种方法产生的微电子拓扑包括与具有第一元素的体积浓度的结构接触形成的膜。 膜具有周期性的连续区域，每个区域各自包括浓度高于设定量的第二元素的区域和具有第二元素的浓度小于设定量的区域。

公开(公告)号：US08257781B1

公开(公告)日：2012-09-04

申请号：US11201709

申请日：2005-08-11

Applicant: Eric G. Webb ,  Steven T. Mayer ,  David Mark Dinneen ,  Edmund B. Minshall ,  Christopher M. Bartlett ,  R. Marshall Stowell ,  Mark T. Winslow ,  Avishai Kepten ,  Jingbin Feng ,  Norman D. Kaplan ,  Richard K. Lyons ,  John B. Alexy

Inventor： Eric G. Webb ,  Steven T. Mayer ,  David Mark Dinneen ,  Edmund B. Minshall ,  Christopher M. Bartlett ,  R. Marshall Stowell ,  Mark T. Winslow ,  Avishai Kepten ,  Jingbin Feng ,  Norman D. Kaplan ,  Richard K. Lyons ,  John B. Alexy

IPC: C23C14/00

CPC classification number: C23C18/1617 ,  C23C18/1632 ,  C23C18/1676 ,  C23C18/168 ,  C23C18/1682 ,  H01L21/288 ,  H01L21/6715 ,  H01L21/76841

Abstract: A main reservoir holds cool reactant liquid. A reaction vessel for treating a substrate is connected to the main reservoir by a feed conduit. A heater is configured to heat reactant liquid in the feed conduit before the liquid enters the reaction vessel. Preferably, the heater is a microwave heater. A recycle conduit connects the reaction vessel with the main reservoir. Preferably, a recycle cooler cools reactant liquid in the recycle conduit before the liquid returns to the main reservoir. Preferably, an accumulation vessel is integrated in the feed conduit for accumulating, heating, conditioning and monitoring reactant liquid before it enters the reaction vessel. Preferably, a recycle accumulator vessel is integrated in the recycle conduit to accommodate reactant liquid as it empties out of the reaction vessel.

Abstract translation: 主要储存器容纳冷反应液体。 用于处理基板的反应容器通过进料导管连接到主容器。 加热器构造成在液体进入反应容器之前加热进料管道中的反应物液体。 优选地，加热器是微波加热器。 回收管道将反应容器与主储存器连接。 优选地，再循环冷却器在液体返回到主储存器之前冷却循环管道中的反应物液体。 优选地，积聚容器集成在进料管道中，用于在反应液进入反应容器之前积聚，加热，调节和监测反应液体。 优选地，再循环蓄能器容器集成在再循环管道中，以便当反应物液体从反应容器中排出时容纳反应液体。

公开(公告)号：US20120213914A1

公开(公告)日：2012-08-23

申请号：US13408039

申请日：2012-02-29

Applicant: Igor C. Ivanov ,  Jonathan Weiguo Zhang ,  Artur Kolics

Inventor： Igor C. Ivanov ,  Jonathan Weiguo Zhang ,  Artur Kolics

IPC: B05D5/12

CPC classification number: C23C18/1676 ,  C23C18/1628 ,  C23C18/163 ,  C23C18/1632 ,  C23C18/168 ,  C23C18/1682 ,  H01L21/288

Abstract: An apparatus is provided having a closable chamber that can be sealed and is capable of withstanding an increased pressure and high temperature. The chamber has several inlet ports for the supply of various process liquids, such as deposition solutions, water for rinsing, etc., and a port for the supply of a gas under pressure. The apparatus also includes a solution heater and a control system for controlling temperature and pressure in the chamber. Uniform deposition is achieved by carrying out the deposition process under pressure and under temperature slightly below the boiling point of the solution. The solution can be supplied from above via a shower head formed in the cover, or through the bottom of the chamber. Rinsing or other auxiliary solutions are supplied via a radially moveable chemical dispensing arm that can be arranged above the substrate parallel thereto.

Abstract translation: 提供一种装置，其具有能够被密封并且能够承受增加的压力和高温的可关闭室。 该室具有用于供应各种处理液体的多个入口，例如沉积溶液，用于冲洗的水等，以及用于在压力下供应气体的端口。 该装置还包括解决方案加热器和用于控制室内的温度和压力的控制系统。 通过在压力下和稍低于溶液沸点的温度下进行沉积工艺来实现均匀沉积。 该解决方案可以从上面通过形成在盖中的淋浴喷头或者通过室的底部供应。 冲洗或其它辅助溶液经由可平行于其上的衬底上方的可径向移动的化学分配臂供应。

公开(公告)号：US07972652B2

公开(公告)日：2011-07-05

申请号：US11549644

申请日：2006-10-14

Applicant: Igor Ivanov ,  Robert D. Tas ,  Shashank Ravindra Kulkarni ,  Ron Rulkens

Inventor： Igor Ivanov ,  Robert D. Tas ,  Shashank Ravindra Kulkarni ,  Ron Rulkens

IPC: B05D5/12 ,  B28B19/00 ,  B29B15/10 ,  C23C18/00 ,  C23C20/00 ,  C23C24/00 ,  C23C26/00 ,  C23C28/00 ,  H01C17/06 ,  H05K3/00

CPC classification number: C23C18/1683 ,  C23C18/1628 ,  C23C18/1682

Abstract: An electroless plating system includes a plating solution, and controlling reducing agents in the plating solution for deposition over outlier features smaller than about five hundred nanometers and isolated by about one thousand nanometers.

Abstract translation: 无电解电镀系统包括电镀液，并且控制电镀液中的还原剂，用于沉积超过约五百纳米并隔离约一千纳米的离子值特征。

公开(公告)号：US20110097477A1

公开(公告)日：2011-04-28

申请号：US12980518

申请日：2010-12-29

Applicant: Igor C. Ivanov

Inventor： Igor C. Ivanov

IPC: B05D5/12

CPC classification number: H01L21/76841 ,  B82Y30/00 ,  C23C18/1619 ,  C23C18/1651 ,  C23C18/1682 ,  C23C18/1683 ,  C25D5/08 ,  C25D7/12 ,  C25D17/001 ,  C25D21/10 ,  H01L21/288 ,  H01L21/6715 ,  H01L21/76801 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76834 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76858 ,  H01L21/76864 ,  H01L21/76867 ,  H01L21/76877 ,  H01L23/53238 ,  H01L2924/0002 ,  Y10T428/12 ,  Y10T428/12458 ,  Y10T428/24479 ,  Y10T428/24612 ,  H01L2924/00

Abstract: An apparatus for processing microelectronic topographies, a method of use of such an apparatus, and a method for passivating hardware of microelectronic processing chambers are provided. The apparatus includes a substrate holder configured to support a microelectronic topography and a rotatable case with sidewalls arranged on opposing sides of the substrate holder. The method of using such an apparatus includes positioning a microelectronic topography upon a substrate holder of a processing chamber, exposing the microelectronic topography to a fluid within the processing chamber, and rotating a case of the processing chamber. The rotation is sufficient to affect movement of the fluid relative to the surface of the microelectronic topography. A method for passivating hardware of a microelectronic processing chamber includes exposing the hardware to an organic compound and subsequently exposing the hardware to an agent configured to form polar bonds with the organic compound.

Abstract translation: 提供了一种用于处理微电子拓扑的装置，这种装置的使用方法以及用于钝化微电子处理室的硬件的方法。 该装置包括：衬底保持器，其构造成支撑微电子形貌;以及旋转壳体，其具有布置在衬底保持器的相对侧上的侧壁。 使用这种装置的方法包括将微电子形貌定位在处理室的衬底保持器上，将微电子拓扑暴露于处理室内的流体，以及旋转处理室的壳体。 旋转足以影响流体相对于微电子拓扑的表面的运动。 用于钝化微电子处理室的硬件的方法包括将硬件暴露于有机化合物，随后将硬件暴露于配置为与有机化合物形成极性键的试剂。