公开(公告)号：US20170306266A1

公开(公告)日：2017-10-26

申请号：US15493819

申请日：2017-04-21

申请人： Ecolab USA Inc.

发明人： Robert J. Ryther ,  Walter D. Cummings

IPC分类号： C11D3/00 ,  C11D3/30 ,  C11D3/10 ,  C11D3/08 ,  C11D3/06 ,  C11D7/34 ,  C11D3/04

CPC分类号： C11D3/0005 ,  C11D3/044 ,  C11D3/06 ,  C11D3/08 ,  C11D3/10 ,  C11D3/30 ,  C11D3/33 ,  C11D3/3409 ,  C11D3/3757 ,  C11D7/06 ,  C11D7/12 ,  C11D7/14 ,  C11D7/16 ,  C11D7/3209 ,  C11D7/3218 ,  C11D7/3245 ,  C11D7/34

摘要： The present disclosure relates to high alkaline cleaners, cleaning systems and methods for removing polymerized zero trans fat soils. The high alkaline cleaner of the present invention generally includes one or more alkaline wetting and saponifying agent(s), a chelating/sequestering system and a surface modifying-threshold agent system. In various embodiments, the cleaners may include, at least one cleaning agent comprising a surfactant or surfactant system and/or a solvent or solvent system and/or a cleaning booster such as a peroxide or sulfite type additive. The cleaners may also include one or more components to modify the composition form and/or the application method in some embodiments. All components described above may also be optimized optionally, to provide emulsification of a composition (both as a usable product or a concentrate that can be diluted to form a usable product). The use of the high alkaline cleaner of the present invention has demonstrated enhanced cleaning characteristics especially at higher temperatures (100° F. to about 300° F.) but also shows enhanced cleaning at ambient temperatures.

公开(公告)号：US09657435B2

公开(公告)日：2017-05-23

申请号：US13703385

申请日：2011-06-21

申请人： Markus Frey ,  Hauke Rohwer ,  Frederique Wendeborn ,  Menno Hazenkamp

发明人： Markus Frey ,  Hauke Rohwer ,  Frederique Wendeborn ,  Menno Hazenkamp

IPC分类号： C11D3/39 ,  C11D3/395 ,  C11D7/54 ,  D06L3/02 ,  C07C225/06 ,  C07C225/22 ,  C07C317/32 ,  C07C323/32 ,  C07C381/12 ,  C11D3/30 ,  C11D3/34 ,  C11D7/32 ,  C11D7/34

CPC分类号： D06L4/15 ,  C07C225/06 ,  C07C225/22 ,  C07C317/32 ,  C07C323/32 ,  C07C381/12 ,  C07C2601/14 ,  C11D3/30 ,  C11D3/349 ,  C11D3/3902 ,  C11D3/3905 ,  C11D3/3915 ,  C11D3/3917 ,  C11D7/3236 ,  C11D7/3281 ,  C11D7/34 ,  D06L4/12

摘要： The present invention relates to the use of a composition comprising specific a-amino-ketones, H2O2, a H2O2 precursor or a peracid and optionally an activator as a bleaching mixture for textile materials or dishes either manually or in an automatic washing machine or dish washer. Further aspects of the invention are the composition comprising specific a-aminoketones and H2O2, a H2O2 precursor or a peracid and a process for bleaching of stains or of soiling on textile materials or dishes in the context of a washing process either manually or in an automatic washing machine or dish washer. Also aspects of the invention are detergent formulations comprising such a composition and novel compounds.

公开(公告)号：US20170076939A1

公开(公告)日：2017-03-16

申请号：US15310647

申请日：2015-05-12

申请人： BASF SE

发明人： Jerry Jhih-Jheng KE ,  Tse Wei YU ,  Yi-Ping CHENG

IPC分类号： H01L21/02 ,  C11D3/37 ,  C11D3/39 ,  H01L21/311 ,  C11D7/32 ,  C11D7/34 ,  C11D7/50 ,  C09K13/00 ,  C11D11/00 ,  C11D7/26

CPC分类号： H01L21/02063 ,  C09K13/00 ,  C11D3/3723 ,  C11D3/3942 ,  C11D3/3947 ,  C11D7/263 ,  C11D7/32 ,  C11D7/34 ,  C11D7/5009 ,  C11D7/5013 ,  C11D11/0047 ,  C11D17/041 ,  H01L21/31111 ,  H01L21/31144 ,  H01L21/32134

摘要： The present invention relates to a novel composition that may be used to control the etching rate of TIN with respect to W, and remove any residues from the surface, e.g. organic or inorganic residues that could contain fluorine (F), which composition comprises a) an aliphatic or aromatic sulfonic acid; b) one or more inhibitor(s); c) an aprotic solvent; d) a glycol ether; and e) water. The present invention also relates to a kit comprising said composition in combination with an oxidant and optionally a stabilizer of the oxidant, and the use thereof.

摘要翻译： 本发明涉及可用于控制TIN相对于W的蚀刻速率并从表面去除任何残留物的新型组合物，例如， 可以含氟（F）的有机或无机残留物，该组合物包含a）脂族或芳族磺酸; b）一种或多种抑制剂; c）非质子溶剂; d）乙二醇醚; 和e）水。 本发明还涉及包含所述组合物与氧化剂和任选的氧化剂稳定剂组合的试剂盒及其用途。

公开(公告)号：US09555451B2

公开(公告)日：2017-01-31

申请号：US15079532

申请日：2016-03-24

申请人： LIFE TECHNOLOGIES CORPORATION

发明人： James A. Ball ,  Phil Waggoner ,  Scott Parker

IPC分类号： B08B7/00 ,  B08B3/08 ,  B08B9/08 ,  C11D3/16 ,  C11D3/34 ,  C11D3/43 ,  G01N27/414 ,  C11D7/50 ,  C11D7/34

CPC分类号： B08B3/08 ,  B05D3/00 ,  B05D5/12 ,  B08B9/08 ,  C11D1/22 ,  C11D3/162 ,  C11D3/3418 ,  C11D3/43 ,  C11D7/34 ,  C11D7/5013 ,  C11D7/5022 ,  C11D11/0047 ,  G01N27/414 ,  G01N27/4145 ,  G01N27/4148 ,  H01L21/02057

摘要： A method of treating a sensor array including a plurality of sensors and an isolation structure, where a sensor of the plurality of sensors has a sensor pad exposed at a surface of the sensor array and the isolation structure is disposed between the sensor pad and sensor pads of other sensors of the plurality of sensors, comprises exposing the sensor pad and the isolation structure to a non-aqueous organo-silicon solution including an organo-silicon compound and a first non-aqueous carrier; applying an acid solution including an organic acid and a second non-aqueous carrier to the sensor pad; and rinsing the acid solution from the sensor pad and the isolation structure.

摘要翻译： 一种处理包括多个传感器和隔离结构的传感器阵列的方法，其中所述多个传感器中的传感器具有在所述传感器阵列的表面处暴露的传感器垫，并且所述隔离结构设置在所述传感器垫和传感器垫之间 所述多个传感器中的其它传感器包括将所述传感器垫和所述隔离结构暴露于包括有机硅化合物和第一非水载体的非水有机硅溶液; 将包含有机酸和第二非水性载体的酸溶液施加到传感器垫; 以及从传感器垫和隔离结构冲洗酸溶液。

公开(公告)号：US20160122695A1

公开(公告)日：2016-05-05

申请号：US14925034

申请日：2015-10-28

申请人： TOKYO OHKA KOGYO CO., LTD.

发明人： Tomoya KUMAGAI ,  Naohisa UENO ,  Mai SUGAWARA

IPC分类号： C11D7/32 ,  C11D7/34 ,  C23F1/02 ,  C11D11/00 ,  B08B3/08 ,  C11D7/26 ,  C11D7/50

CPC分类号： C11D7/3281 ,  C11D7/265 ,  C11D7/3209 ,  C11D7/5022 ,  C11D11/0047 ,  C23F11/10 ,  C23G1/16

摘要： A cleaning liquid for lithography that is capable of removing residual material which remains after an etching process, as well as suppressing corrosion of at least one of cobalt and alloys thereof, and a method for cleaning a substrate using the cleaning liquid. The cleaning liquid for lithography includes hydroxylamine, at least one basic compound selected from amine compounds other than hydroxylamine, and quaternary ammonium hydroxides, and water, and has a pH value of 8 or higher. The cleaning liquid is used in cleaning a substrate containing at least one of cobalt and alloys thereof.

摘要翻译： 一种用于光刻的清洁液体，其能够去除在蚀刻工艺之后残留的残余材料，以及抑制钴及其合金中的至少一种的腐蚀，以及使用该清洗液清洗基板的方法。 用于光刻的清洁液包括羟胺，至少一种选自羟胺以外的胺化合物的碱性化合物和季铵氢氧化物和水，并且具有8或更高的pH值。 清洗液用于清洗含有钴及其合金中的至少一种的基材。

公开(公告)号：US09303239B2

公开(公告)日：2016-04-05

申请号：US13778810

申请日：2013-02-27

申请人： SHIMADZU CORPORATION

发明人： Akihiro Arai

IPC分类号： B08B3/08 ,  B08B3/04 ,  B08B9/00 ,  C11D7/50 ,  C11D7/26 ,  C11D7/28 ,  C11D7/34 ,  C11D11/00 ,  B01L3/00 ,  G01N27/447 ,  G01N30/60

CPC分类号： C11D7/5022 ,  B01L3/502753 ,  B08B3/04 ,  B08B3/08 ,  B08B9/00 ,  C11D7/265 ,  C11D7/28 ,  C11D7/34 ,  C11D7/5004 ,  C11D7/5013 ,  C11D11/0023 ,  G01N27/44791 ,  G01N30/6095

摘要： The present invention provides a cleaning method by which the performance of a microchip can be recovered and a cleaning liquid. A method for cleaning a microfluidic device comprising: cleaning a channel that is formed in the microfluidic device, has a surface having a polymer coating, and has been brought into contact with a sample containing nucleic acid and/or protein, by bringing the channel into contact with a cleaning liquid comprised only of an organic solvent having solubility in at least the same volume of water at 25° C., or a cleaning liquid containing 50 vol % or more of the organic solvent in a buffer solution. The method wherein the buffer solution has a pH of 8 to 10. The method wherein the buffer solution further contains 3 to 8M of a protein denaturant. The method wherein the buffer solution has a pH of 2 to 4.

摘要翻译： 本发明提供一种能够回收微芯片性能的清洗方法和清洗液。 一种用于清洁微流体装置的方法，包括：清洁在微流体装置中形成的通道，具有聚合物涂层的表面，并且已经与含有核酸和/或蛋白质的样品接触，通过使通道进入 与仅在25℃下至少相同体积的水中溶解的有机溶剂的清洗液或在缓冲溶液中含有50体积％以上有机溶剂的清洗液接触。 其中缓冲溶液的pH为8〜10的方法，其中缓冲液还含有3〜8M的蛋白质变性剂。 缓冲溶液的pH为2〜4的方法。

公开(公告)号：US09212340B2

公开(公告)日：2015-12-15

申请号：US13877548

申请日：2011-10-04

申请人： Mélanie Vauthrin ,  Bernard Monguillon ,  Paul Guillaume Schmitt

发明人： Mélanie Vauthrin ,  Bernard Monguillon ,  Paul Guillaume Schmitt

IPC分类号： C11D3/30 ,  C11D3/34 ,  C11D3/43 ,  C11D3/44 ,  C11D7/50 ,  C11D3/20 ,  C11D7/32 ,  C11D7/34 ,  C11D11/00

CPC分类号： C11D7/5009 ,  C11D3/2003 ,  C11D3/2068 ,  C11D3/2093 ,  C11D3/30 ,  C11D3/3445 ,  C11D7/3209 ,  C11D7/3218 ,  C11D7/3227 ,  C11D7/34 ,  C11D11/0041

摘要： The present disclosure relates to a dimethyl sulfoxide composition suitable for cleaning polymer residue found on the devices used for processing plastic materials, in particular polyurethane.

摘要翻译： 本公开内容涉及适用于清洁用于处理塑料材料的装置，特别是聚氨酯上的聚合物残余物的二甲基亚砜组合物。

公开(公告)号：US09200180B2

公开(公告)日：2015-12-01

申请号：US12419619

申请日：2009-04-07

申请人： Gautam Banerjee ,  Timothy Frederick Compton ,  Junaid Ahmed Siddiqui ,  Ajoy Zutshi

发明人： Gautam Banerjee ,  Timothy Frederick Compton ,  Junaid Ahmed Siddiqui ,  Ajoy Zutshi

IPC分类号： C09K13/00 ,  C09G1/02 ,  C11D7/34 ,  C11D11/00 ,  H01L21/02 ,  H01L21/321

CPC分类号： C09G1/02 ,  C11D3/3947 ,  C11D7/20 ,  C11D7/34 ,  C11D11/0047 ,  H01L21/02074 ,  H01L21/31053 ,  H01L21/3212 ,  H01L21/32125

摘要： A composition and associated method for chemical mechanical planarization (or other polishing) are described. The composition contains an abrasive, benzenesulfonic acid compound, a per-compound oxidizing agent, and water. The composition affords tunability of removal rates for metal, barrier layer materials, and dielectric layer materials in metal CMP processes. The composition is particularly useful in conjunction with the associated method for metal CMP applications (e.g., step 2 copper CMP processes).

公开(公告)号：US20150337243A1

公开(公告)日：2015-11-26

申请号：US14715979

申请日：2015-05-19

申请人： Christopher A. Bozin

发明人： Christopher A. Bozin

IPC分类号： C11D7/50 ,  C09K15/12 ,  C09K15/04 ,  C11D7/34 ,  C11D7/24

CPC分类号： C11D7/5022 ,  C09K15/04 ,  C09K15/12 ,  C11D7/10 ,  C11D7/24 ,  C11D7/263 ,  C11D7/34 ,  C11D7/50 ,  C11D7/5004 ,  C11D11/0023

摘要： A composition for cleaning and sealing coated surfaces like painted aluminum, coated tin, coated zinc, coated steel, and fiberglass. The composition includes a first solvent, preferably an aliphatic solvent, a second solvent, such as glycol ether, a first corrosion inhibitor, and a second corrosion inhibitor. The first corrosion inhibitor may be a water displacing agent, such as petroleum jelly, and may be in a 1:6 ratio to the second corrosion inhibitor. The second corrosion inhibitor may be calcium sulfonate. The solvents in the composition will remove oxidation on the surface and then evaporate, leaving behind the corrosion inhibitors which will form a sealant layer on the surface.

摘要翻译： 用于清洁和密封涂层表面的组合物，如涂铝，镀锡锡，镀锌锌，镀钢和玻璃纤维。 该组合物包括第一溶剂，优选脂族溶剂，第二溶剂如二醇醚，第一腐蚀抑制剂和第二腐蚀抑制剂。 第一种腐蚀抑制剂可以是取代剂，例如凡士林，并且可以与第二种腐蚀抑制剂的比例为1:6。 第二种腐蚀抑制剂可以是磺酸钙。 组合物中的溶剂将去除表面上的氧化，然后蒸发，留下将在表面上形成密封剂层的腐蚀抑制剂。

公开(公告)号：US08894774B2

公开(公告)日：2014-11-25

申请号：US13094967

申请日：2011-04-27

申请人： Anh Duong

发明人： Anh Duong

IPC分类号： C11D7/32 ,  C11D7/26 ,  C11D7/34 ,  C11D7/50 ,  H01L21/285 ,  H01L21/02

CPC分类号： C11D7/3209 ,  C11D7/263 ,  C11D7/3218 ,  C11D7/34 ,  C11D7/5013 ,  C11D7/5022 ,  H01L21/02068 ,  H01L21/28518

摘要： A composition of matter and method to remove excess material during the manufacturing of semiconductor devices includes providing a substrate; applying a metal chelator mixture to the substrate, where the metal chelator mixture comprising a metal chelator and a solvent, where the metal chelator binds to the platinum residue, to render the platinum residue soluble; and rinsing the metal chelator mixture from the substrate to remove the platinum residue from the silicide.

摘要翻译： 在制造半导体器件期间除去多余材料的物质组成和方法包括提供衬底; 将金属螯合剂混合物施加到基底上，其中金属螯合剂混合物包含金属螯合剂和溶剂，其中金属螯合剂与铂残基结合，使铂残基可溶; 并从底物上冲洗金属螯合剂混合物以从硅化物中除去铂残基。