公开(公告)号：US09237333B2

公开(公告)日：2016-01-12

申请号：US13184489

申请日：2011-07-15

申请人： Jun Haeng Lee ,  Hyun Surk Ryu ,  Keun Joo Park ,  Chang Woo Shin

发明人： Jun Haeng Lee ,  Hyun Surk Ryu ,  Keun Joo Park ,  Chang Woo Shin

IPC分类号： G01S7/487 ,  G01S17/89 ,  H04N13/02 ,  G01S7/486

CPC分类号： H04N13/271 ,  G01S7/4861 ,  G01S7/487 ,  G01S17/89 ,  H04N13/254

摘要： A depth information measuring method and apparatus for a three-dimensional (3D) camera may output, to an object, an optical pulse of which an intensity is higher than an intensity of an ambient light. The depth information measuring method and apparatus may generate a voltage that is proportional to a log value of an intensity of a light reflected from the object. The depth information measuring method and apparatus may use discharging units, and the discharging units may respectively include dischargers having different discharging speeds or capacitors having different capacities.

摘要翻译： 用于三维（3D）照相机的深度信息测量方法和装置可以向对象输出强度高于环境光强度的光脉冲。 深度信息测量方法和装置可以产生与从物体反射的光的强度的对数值成比例的电压。 深度信息测量方法和装置可以使用放电单元，并且放电单元可以分别包括具有不同放电速度的放电器或具有不同容量的电容器。

公开(公告)号：US09104974B2

公开(公告)日：2015-08-11

申请号：US13560261

申请日：2012-07-27

申请人： Jae Yoon Sim ,  Jun Haeng Lee ,  Hyun Surk Ryu ,  Keun Joo Park ,  Chang Woo Shin

发明人： Jae Yoon Sim ,  Jun Haeng Lee ,  Hyun Surk Ryu ,  Keun Joo Park ,  Chang Woo Shin

IPC分类号： G06N3/063 ,  G06N3/04

CPC分类号： G06N3/049 ,  G06N3/063 ,  G06N3/0635

摘要： An apparatus and a method for transmitting and receiving a spike event in a neuromorphic chip. A transmission apparatus of the neuromorphic chip outputs addresses sequentially and repeatedly to an address bus, and when a spike generated by a neuron is detected by the transmission apparatus, outputs a strobe at a first time when one of the addresses being output sequentially and repeatedly becomes identical to an address of the neuron that generated the spike. A receiving apparatus of the neuromorphic chip inputs an address through the address bus at a strobe detection time when the strobe is detected by the receiving apparatus.

摘要翻译： 一种用于在神经元芯片中发送和接收尖峰事件的装置和方法。 神经元片的发送装置顺序地将地址输出到地址总线，当由发送装置检测出由神经元产生的尖峰时，当顺序地反复输出的地址中的一个被重复地变为 与产生尖峰的神经元的地址相同。 当由接收装置检测到选通时，神经元片的接收装置在选通检测时间通过地址总线输入地址。

公开(公告)号：US09037524B2

公开(公告)日：2015-05-19

申请号：US13555382

申请日：2012-07-23

申请人： Jun Haeng Lee ,  Chang-Woo Shin ,  Hyun Surk Ryu ,  Keun Joo Park

发明人： Jun Haeng Lee ,  Chang-Woo Shin ,  Hyun Surk Ryu ,  Keun Joo Park

IPC分类号： G06E1/00 ,  G06N3/06

CPC分类号： G06N3/06 ,  G06N3/049 ,  G06N3/063

摘要： A spiking neuron-based working memory device is provided. The spiking neuron-based working memory device includes an input interface configured to convert input spike signals into respective burst signals having predetermined forms, and output a sequence of the burst signals, the burst signals corresponding to the input spike signals in a burst structure, and two or more memory elements (MEs) configured to sequentially store features respectively corresponding to the outputted sequence of the burst signals, each of the MEs continuously outputting spike signals respectively corresponding to the stored features.

摘要翻译： 提供了一种基于神经元的工作记忆装置。 尖峰神经元工作存储装置包括：输入接口，被配置为将输入尖峰信号转换成具有预定形式的各自的脉冲串信号，并输出脉冲串信号序列，脉冲串信号对应于突发结构中的输入尖峰信号;以及 两个或多个存储器元件（ME）被配置为顺序地存储分别对应于所输出的突发信号序列的特征，每个ME连续地输出对应于存储的特征的尖峰信号。

公开(公告)号：US08698092B2

公开(公告)日：2014-04-15

申请号：US13229429

申请日：2011-09-09

申请人： Jun Haeng Lee ,  Delbruck Tobi ,  Hyunsurk Ryu ,  Keun Joo Park ,  Chang Woo Shin

发明人： Jun Haeng Lee ,  Delbruck Tobi ,  Hyunsurk Ryu ,  Keun Joo Park ,  Chang Woo Shin

IPC分类号： G06K9/62 ,  G01J1/00

CPC分类号： G06F3/017 ,  G06K9/00335 ,  G06T7/254 ,  G06T2200/28

摘要： A motion recognizing apparatus and method are provided. According to an aspect, a motion recognizing apparatus may include: an optical sensor configured to sense at least a portion of a subject where a motion occurs and to output one or more events in response thereto; a motion tracing unit configured to trace a motion locus of the portion where the motion occurs based on the one or more outputted events; and a motion pattern determining unit configured to determine a motion pattern of the portion where the motion occurs based on the traced motion locus.

摘要翻译： 提供了一种运动识别装置和方法。 根据一方面，运动识别装置可以包括：光学传感器，被配置为感测发生运动的对象的至少一部分并且响应于此而输出一个或多个事件; 运动跟踪单元，被配置为基于所述一个或多个输出事件跟踪所述运动发生的部分的运动轨迹; 以及运动图案确定单元，被配置为基于跟踪的运动轨迹来确定运动发生的部分的运动模式。

公开(公告)号：US08456012B2

公开(公告)日：2013-06-04

申请号：US12568086

申请日：2009-09-28

申请人： Chang-Woo Shin ,  Hyun-Soo Chung ,  Eun-Chul Ahn ,  Jum-Gon Kim ,  Jin-Ho Chun

发明人： Chang-Woo Shin ,  Hyun-Soo Chung ,  Eun-Chul Ahn ,  Jum-Gon Kim ,  Jin-Ho Chun

IPC分类号： H01L23/48 ,  H01L23/52

CPC分类号： H01L21/76841 ,  H01L23/525 ,  H01L23/53238 ,  H01L24/02 ,  H01L24/13 ,  H01L2224/0231 ,  H01L2224/02331 ,  H01L2224/0235 ,  H01L2224/0401 ,  H01L2224/05599 ,  H01L2224/13099 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01327 ,  H01L2924/04941 ,  H01L2924/12044

摘要： A semiconductor device including an interconnection structure including a copper pad, a pad barrier layer and a metal redistribution layer, an interconnection structure thereof and methods of fabricating the same are provided. The semiconductor device includes a copper pad disposed on a first layer, a pad barrier layer including titanium disposed on the copper pad, an inorganic insulating layer disposed on the pad barrier layer, a buffer layer disposed on the inorganic insulating layer, wherein the inorganic insulating layer and the buffer layer expose a portion of the pad barrier layer, a seed metal layer disposed on the exposed buffer layer, a metal redistribution layer disposed on the seed metal layer, and a first protective layer disposed on the metal redistribution layer.

摘要翻译： 提供一种包括铜焊盘，焊盘阻挡层和金属再分布层的互连结构的半导体器件，其互连结构及其制造方法。 半导体器件包括设置在第一层上的铜焊盘，包括设置在铜焊盘上的钛的焊盘阻挡层，设置在焊盘阻挡层上的无机绝缘层，设置在无机绝缘层上的缓冲层，其中无机绝缘 所述缓冲层暴露所述焊盘阻挡层的一部分，设置在所述暴露的缓冲层上的种子金属层，设置在所述种子金属层上的金属再分配层以及设置在所述金属再分配层上的第一保护层。

公开(公告)号：US20130031039A1

公开(公告)日：2013-01-31

申请号：US13560261

申请日：2012-07-27

申请人： Jae Yoon Sim ,  Jun Haeng Lee ,  Hyun Surk Ryu ,  Keun Joo Park ,  Chang Woo Shin

发明人： Jae Yoon Sim ,  Jun Haeng Lee ,  Hyun Surk Ryu ,  Keun Joo Park ,  Chang Woo Shin

IPC分类号： G06N3/04

CPC分类号： G06N3/049 ,  G06N3/063 ,  G06N3/0635

摘要： An apparatus and a method for transmitting and receiving a spike event in a neuromorphic chip. A transmission apparatus of the neuromorphic chip outputs addresses sequentially and repeatedly to an address bus, and when a spike generated by a neuron is detected by the transmission apparatus, outputs a strobe at a first time when one of the addresses being output sequentially and repeatedly becomes identical to an address of the neuron that generated the spike. A receiving apparatus of the neuromorphic chip inputs an address through the address bus at a strobe detection time when the strobe is detected by the receiving apparatus.

摘要翻译： 一种用于在神经元芯片中发送和接收尖峰事件的装置和方法。 神经元片的发送装置顺序地将地址输出到地址总线，当由发送装置检测出由神经元产生的尖峰时，当顺序地反复输出的地址中的一个被重复地变为 与产生尖峰的神经元的地址相同。 当由接收装置检测到选通时，神经元片的接收装置在选通检测时间通过地址总线输入地址。

公开(公告)号：US20120105587A1

公开(公告)日：2012-05-03

申请号：US13184489

申请日：2011-07-15

申请人： Jun Haeng LEE ,  Hyun Surk Ryu ,  Keun Joo Park ,  Chang Woo Shin

发明人： Jun Haeng LEE ,  Hyun Surk Ryu ,  Keun Joo Park ,  Chang Woo Shin

IPC分类号： H04N13/02

CPC分类号： H04N13/271 ,  G01S7/4861 ,  G01S7/487 ,  G01S17/89 ,  H04N13/254

摘要： Provided is a depth information measuring method and apparatus for a three-dimensional (3D) camera. The depth information measuring method and apparatus may output, to an object, an optical pulse of which an intensity is higher than an intensity of an ambient light. The depth information measuring method and apparatus may generate a voltage that is proportional to a log value of an intensity of a light reflected from the object. The depth information measuring method and apparatus may use discharging units, and the discharging units may respectively include dischargers having different discharging speeds or capacitors having different capacities.

摘要翻译： 提供了一种用于三维（3D）照相机的深度信息测量方法和装置。 深度信息测量方法和装置可以向目标输出强度高于环境光强度的光脉冲。 深度信息测量方法和装置可以产生与从物体反射的光的强度的对数值成比例的电压。 深度信息测量方法和装置可以使用放电单元，并且放电单元可以分别包括具有不同放电速度的放电器或具有不同容量的电容器。

公开(公告)号：US20080157287A1

公开(公告)日：2008-07-03

申请号：US12003798

申请日：2008-01-02

申请人： Ju-Il Choi ,  Cha-Jea Jo ,  Seok-Ho Kim ,  Chang-Woo Shin

发明人： Ju-Il Choi ,  Cha-Jea Jo ,  Seok-Ho Kim ,  Chang-Woo Shin

IPC分类号： H01L21/768 ,  H01L23/48

CPC分类号： H01L25/0657 ,  H01L21/76898 ,  H01L2224/05001 ,  H01L2224/05009 ,  H01L2224/05181 ,  H01L2224/0557 ,  H01L2224/13025 ,  H01L2224/16 ,  H01L2224/16145 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2225/06544 ,  H01L2225/06565 ,  H01L2924/00014 ,  H01L2224/05599

摘要： A semiconductor device and methods of forming the same are provided. The methods may include forming a hole in a preliminary semiconductor substrate, forming an insulating layer in the hole of the preliminary semiconductor substrate, forming a plating conductive layer on the insulating layer and the preliminary semiconductor substrate, forming a seed metal layer contacting the plating conductive layer at a lower portion of the hole and growing the seed metal layer to form a through-silicon via (TSV). The TSV may be formed through an electroplating process such that the seed metal layer grows from the lower portion of the hole to an upper portion of the hole.

摘要翻译： 提供半导体器件及其形成方法。 所述方法可以包括在初步半导体衬底中形成孔，在初步半导体衬底的孔中形成绝缘层，在绝缘层和初级半导体衬底上形成电镀导电层，形成与电镀导电性接触的晶种金属层 层，并且生长种子金属层以形成穿硅通孔（TSV）。 TSV可以通过电镀工艺形成，使得种子金属层从孔的下部生长到孔的上部。

公开(公告)号：US08088648B2

公开(公告)日：2012-01-03

申请号：US12840656

申请日：2010-07-21

申请人： Cha-Jea Jo ,  Myung-Kee Chung ,  Nam-Seog Kim ,  In-Young Lee ,  Seok-Ho Kim ,  Ho-Jin Lee ,  Ju-Il Choi ,  Chang-Woo Shin

发明人： Cha-Jea Jo ,  Myung-Kee Chung ,  Nam-Seog Kim ,  In-Young Lee ,  Seok-Ho Kim ,  Ho-Jin Lee ,  Ju-Il Choi ,  Chang-Woo Shin

IPC分类号： H01L21/50 ,  H01L21/60

CPC分类号： H01L23/3128 ,  H01L21/76898 ,  H01L23/481 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/05001 ,  H01L2224/05009 ,  H01L2224/05025 ,  H01L2224/05124 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/13025 ,  H01L2224/16145 ,  H01L2225/06513 ,  H01L2225/06527 ,  H01L2225/06541 ,  H01L2924/00014 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/04941 ,  H01L2924/15311 ,  H01L2224/05599

摘要： A chip stack package includes a substrate, a plurality of chips, a plurality of adhesive layers and a plug. The substrate has a wiring pattern and a seed layer formed on the wiring pattern. Each of the chips has an electrode pad and a first through-hole that penetrates the electrode pad. The chips are stacked such that the first through-holes are aligned on the seed layer of the substrate. The adhesive layers are interposed between the substrate and one of the chips, as well as between the chips. Each of the adhesive layers has a second through-hole connected to the first through-hole. The plug fills up the first through-holes and the second through-holes and electrically connects the electrode pads to the wiring pattern of the substrate. A cross-sectional area of the plug in the second through-holes may be larger than that of the plug in the first through-holes.

摘要翻译： 芯片堆叠封装包括基板，多个芯片，多个粘合剂层和插头。 基板具有形成在布线图案上的布线图案和种子层。 每个芯片具有电极焊盘和穿过电极焊盘的第一通孔。 芯片被堆叠，使得第一通孔在衬底的籽晶层上排列。 粘合层介于基片和芯片之一之间以及芯片之间。 每个粘合层具有连接到第一通孔的第二通孔。 插头填充第一通孔和第二通孔，并将电极焊盘电连接到衬底的布线图案。 第二通孔中的插塞的横截面面积可以大于第一通孔中的插头的横截面面积。

公开(公告)号：US20110104888A1

公开(公告)日：2011-05-05

申请号：US12797837

申请日：2010-06-10

申请人： Ki-Hyuk KIM ,  Nam-Seog Kim ,  Hyun-Soo Chung ,  Seok-Ho Kim ,  Myeong-Soon Park ,  Chang-Woo Shin

发明人： Ki-Hyuk KIM ,  Nam-Seog Kim ,  Hyun-Soo Chung ,  Seok-Ho Kim ,  Myeong-Soon Park ,  Chang-Woo Shin

IPC分类号： H01L21/768

CPC分类号： H01L21/76813 ,  H01L21/561 ,  H01L21/76879 ,  H01L23/3114 ,  H01L23/3171 ,  H01L23/49816 ,  H01L23/525 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L24/48 ,  H01L24/73 ,  H01L25/0657 ,  H01L25/105 ,  H01L2224/02317 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05599 ,  H01L2224/13021 ,  H01L2224/13022 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/48145 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2225/06506 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06527 ,  H01L2225/06541 ,  H01L2225/06562 ,  H01L2225/1023 ,  H01L2225/1041 ,  H01L2225/1058 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2224/32145 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： Semiconductor devices and methods of forming the same, including forming a chip pad on a chip substrate, forming a passivation layer on the chip pad and the chip substrate, forming a first insulation layer on the passivation layer, forming a recess and a first opening in the first insulation layer, forming a second opening in the passivation layer to correspond to the first opening, forming a redistribution line in a redistribution line area of the recess, the first opening, and the second opening, forming a second insulation layer on the redistribution line and the first insulation layer, and forming an opening in the second insulation to expose a portion of the redistribution line as a redistribution pad.

摘要翻译： 半导体器件及其形成方法，包括在芯片衬底上形成芯片焊盘，在芯片焊盘和芯片衬底上形成钝化层，在钝化层上形成第一绝缘层，形成凹槽和第一开口 所述第一绝缘层在所述钝化层中形成对应于所述第一开口的第二开口，在所述凹部，所述第一开口和所述第二开口的再分布线区域中形成再分配线，在所述再分布上形成第二绝缘层 线和第一绝缘层，并且在第二绝缘体中形成开口以将再分配线的一部分暴露为再分布焊盘。