公开(公告)号：US20080157287A1

公开(公告)日：2008-07-03

申请号：US12003798

申请日：2008-01-02

Applicant: Ju-Il Choi ,  Cha-Jea Jo ,  Seok-Ho Kim ,  Chang-Woo Shin

Inventor： Ju-Il Choi ,  Cha-Jea Jo ,  Seok-Ho Kim ,  Chang-Woo Shin

IPC: H01L21/768 ,  H01L23/48

CPC classification number: H01L25/0657 ,  H01L21/76898 ,  H01L2224/05001 ,  H01L2224/05009 ,  H01L2224/05181 ,  H01L2224/0557 ,  H01L2224/13025 ,  H01L2224/16 ,  H01L2224/16145 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2225/06544 ,  H01L2225/06565 ,  H01L2924/00014 ,  H01L2224/05599

Abstract: A semiconductor device and methods of forming the same are provided. The methods may include forming a hole in a preliminary semiconductor substrate, forming an insulating layer in the hole of the preliminary semiconductor substrate, forming a plating conductive layer on the insulating layer and the preliminary semiconductor substrate, forming a seed metal layer contacting the plating conductive layer at a lower portion of the hole and growing the seed metal layer to form a through-silicon via (TSV). The TSV may be formed through an electroplating process such that the seed metal layer grows from the lower portion of the hole to an upper portion of the hole.

Abstract translation: 提供半导体器件及其形成方法。 所述方法可以包括在初步半导体衬底中形成孔，在初步半导体衬底的孔中形成绝缘层，在绝缘层和初级半导体衬底上形成电镀导电层，形成与电镀导电性接触的晶种金属层 层，并且生长种子金属层以形成穿硅通孔（TSV）。 TSV可以通过电镀工艺形成，使得种子金属层从孔的下部生长到孔的上部。

公开(公告)号：US20100285635A1

公开(公告)日：2010-11-11

申请号：US12840656

申请日：2010-07-21

Applicant: Cha-Jea Jo ,  Myung-Kee Chung ,  Nam-Seog Kim ,  In-Young Lee ,  Seok-Ho Kim ,  Ho-Jin Lee ,  Ju-Il Choi ,  Chang-Woo Shin

Inventor： Cha-Jea Jo ,  Myung-Kee Chung ,  Nam-Seog Kim ,  In-Young Lee ,  Seok-Ho Kim ,  Ho-Jin Lee ,  Ju-Il Choi ,  Chang-Woo Shin

IPC: H01L21/60 ,  H01L21/50

CPC classification number: H01L23/3128 ,  H01L21/76898 ,  H01L23/481 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/05001 ,  H01L2224/05009 ,  H01L2224/05025 ,  H01L2224/05124 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/13025 ,  H01L2224/16145 ,  H01L2225/06513 ,  H01L2225/06527 ,  H01L2225/06541 ,  H01L2924/00014 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/04941 ,  H01L2924/15311 ,  H01L2224/05599

Abstract: A chip stack package includes a substrate, a plurality of chips, a plurality of adhesive layers and a plug. The substrate has a wiring pattern and a seed layer formed on the wiring pattern. Each of the chips has an electrode pad and a first through-hole that penetrates the electrode pad. The chips are stacked such that the first through-holes are aligned on the seed layer of the substrate. The adhesive layers are interposed between the substrate and one of the chips, as well as between the chips. Each of the adhesive layers has a second through-hole connected to the first through-hole. The plug fills up the first through-holes and the second through-holes and electrically connects the electrode pads to the wiring pattern of the substrate. A cross-sectional area of the plug in the second through-holes may be larger than that of the plug in the first through-holes.

Abstract translation: 芯片堆叠封装包括基板，多个芯片，多个粘合剂层和插头。 基板具有形成在布线图案上的布线图案和种子层。 每个芯片具有电极焊盘和穿过电极焊盘的第一通孔。 芯片被堆叠，使得第一通孔在衬底的籽晶层上排列。 粘合层介于基片和芯片之一之间以及芯片之间。 每个粘合层具有连接到第一通孔的第二通孔。 插头填充第一通孔和第二通孔，并将电极焊盘电连接到衬底的布线图案。 第二通孔中的插塞的横截面面积可以大于第一通孔中的插头的横截面面积。

公开(公告)号：US08088648B2

公开(公告)日：2012-01-03

申请号：US12840656

申请日：2010-07-21

Applicant: Cha-Jea Jo ,  Myung-Kee Chung ,  Nam-Seog Kim ,  In-Young Lee ,  Seok-Ho Kim ,  Ho-Jin Lee ,  Ju-Il Choi ,  Chang-Woo Shin

Inventor： Cha-Jea Jo ,  Myung-Kee Chung ,  Nam-Seog Kim ,  In-Young Lee ,  Seok-Ho Kim ,  Ho-Jin Lee ,  Ju-Il Choi ,  Chang-Woo Shin

IPC: H01L21/50 ,  H01L21/60

CPC classification number: H01L23/3128 ,  H01L21/76898 ,  H01L23/481 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/05001 ,  H01L2224/05009 ,  H01L2224/05025 ,  H01L2224/05124 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/13025 ,  H01L2224/16145 ,  H01L2225/06513 ,  H01L2225/06527 ,  H01L2225/06541 ,  H01L2924/00014 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/04941 ,  H01L2924/15311 ,  H01L2224/05599

Abstract: A chip stack package includes a substrate, a plurality of chips, a plurality of adhesive layers and a plug. The substrate has a wiring pattern and a seed layer formed on the wiring pattern. Each of the chips has an electrode pad and a first through-hole that penetrates the electrode pad. The chips are stacked such that the first through-holes are aligned on the seed layer of the substrate. The adhesive layers are interposed between the substrate and one of the chips, as well as between the chips. Each of the adhesive layers has a second through-hole connected to the first through-hole. The plug fills up the first through-holes and the second through-holes and electrically connects the electrode pads to the wiring pattern of the substrate. A cross-sectional area of the plug in the second through-holes may be larger than that of the plug in the first through-holes.

Abstract translation: 芯片堆叠封装包括基板，多个芯片，多个粘合剂层和插头。 基板具有形成在布线图案上的布线图案和种子层。 每个芯片具有电极焊盘和穿过电极焊盘的第一通孔。 芯片被堆叠，使得第一通孔在衬底的籽晶层上排列。 粘合层介于基片和芯片之一之间以及芯片之间。 每个粘合层具有连接到第一通孔的第二通孔。 插头填充第一通孔和第二通孔，并将电极焊盘电连接到衬底的布线图案。 第二通孔中的插塞的横截面面积可以大于第一通孔中的插头的横截面面积。

公开(公告)号：US20080157332A1

公开(公告)日：2008-07-03

申请号：US12000384

申请日：2007-12-12

Applicant: Cha-Jea Jo ,  Seok-Ho Kim ,  Ju-Il Choi ,  Chang-Woo Shin

Inventor： Cha-Jea Jo ,  Seok-Ho Kim ,  Ju-Il Choi ,  Chang-Woo Shin

IPC: H01L23/538 ,  H01L21/58

CPC classification number: H01L25/0657 ,  H01L21/6835 ,  H01L24/24 ,  H01L24/82 ,  H01L25/50 ,  H01L2224/24145 ,  H01L2224/48463 ,  H01L2225/06524 ,  H01L2225/06551 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/014 ,  H01L2924/15311 ,  H01L2924/1532 ,  H01L2924/19107

Abstract: A stacked semiconductor package may include: a substrate; semiconductor packages stacked on the substrate; an interconnection member formed on edges of the semiconductor packages; and a conductive reinforcement member formed on the interconnection member. Each of the semiconductor packages may include a conductive line. The interconnection member may electrically connect the conductive line of the semiconductor packages to the conductive line of at least one other semiconductor package. A method of manufacturing a stacked semiconductor package may include: forming semiconductor packages; stacking the semiconductor packages on a substrate; forming a mask pattern on the semiconductor packages and the substrate to expose the edges of the semiconductor packages; performing an electroless plating process on the edges of the semiconductor packages to form a seed layer; and performing an electroplating process on the seed layer to form an interconnection member for electrically connecting the conductive lines to each other.

Abstract translation: 层叠的半导体封装可以包括：衬底; 堆叠在基板上的半导体封装; 形成在所述半导体封装的边缘上的互连构件; 以及形成在所述互连构件上的导电加强构件。 每个半导体封装可以包括导线。 互连构件可将半导体封装的导线电连接至至少一个其它半导体封装的导线。 层叠半导体封装的制造方法可以包括：形成半导体封装; 将半导体封装堆叠在衬底上; 在所述半导体封装和所述衬底上形成掩模图案以暴露所述半导体封装的边缘; 在半导体封装的边缘上进行化学镀处理以形成种子层; 以及在种子层上进行电镀处理以形成用于将导线彼此电连接的互连构件。

公开(公告)号：US08431479B2

公开(公告)日：2013-04-30

申请号：US12797837

申请日：2010-06-10

Applicant: Ki-Hyuk Kim ,  Nam-Seog Kim ,  Hyun-Soo Chung ,  Seok-Ho Kim ,  Myeong-Soon Park ,  Chang-Woo Shin

Inventor： Ki-Hyuk Kim ,  Nam-Seog Kim ,  Hyun-Soo Chung ,  Seok-Ho Kim ,  Myeong-Soon Park ,  Chang-Woo Shin

IPC: H01L21/4763

CPC classification number: H01L21/76813 ,  H01L21/561 ,  H01L21/76879 ,  H01L23/3114 ,  H01L23/3171 ,  H01L23/49816 ,  H01L23/525 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L24/48 ,  H01L24/73 ,  H01L25/0657 ,  H01L25/105 ,  H01L2224/02317 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05599 ,  H01L2224/13021 ,  H01L2224/13022 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/48145 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2225/06506 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06527 ,  H01L2225/06541 ,  H01L2225/06562 ,  H01L2225/1023 ,  H01L2225/1041 ,  H01L2225/1058 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2224/32145 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: Semiconductor devices and methods of forming the same, including forming a chip pad on a chip substrate, forming a passivation layer on the chip pad and the chip substrate, forming a first insulation layer on the passivation layer, forming a recess and a first opening in the first insulation layer, forming a second opening in the passivation layer to correspond to the first opening, forming a redistribution line in a redistribution line area of the recess, the first opening, and the second opening, forming a second insulation layer on the redistribution line and the first insulation layer, and forming an opening in the second insulation to expose a portion of the redistribution line as a redistribution pad.

Abstract translation: 半导体器件及其形成方法，包括在芯片衬底上形成芯片焊盘，在芯片焊盘和芯片衬底上形成钝化层，在钝化层上形成第一绝缘层，形成凹槽和第一开口 所述第一绝缘层在所述钝化层中形成对应于所述第一开口的第二开口，在所述凹部，所述第一开口和所述第二开口的再分布线区域中形成再分配线，在所述再分布上形成第二绝缘层 线和第一绝缘层，并且在第二绝缘体中形成开口以将再分配线的一部分暴露为再分布焊盘。

公开(公告)号：US20110104888A1

公开(公告)日：2011-05-05

申请号：US12797837

申请日：2010-06-10

Applicant: Ki-Hyuk KIM ,  Nam-Seog Kim ,  Hyun-Soo Chung ,  Seok-Ho Kim ,  Myeong-Soon Park ,  Chang-Woo Shin

Inventor： Ki-Hyuk KIM ,  Nam-Seog Kim ,  Hyun-Soo Chung ,  Seok-Ho Kim ,  Myeong-Soon Park ,  Chang-Woo Shin

IPC: H01L21/768

CPC classification number: H01L21/76813 ,  H01L21/561 ,  H01L21/76879 ,  H01L23/3114 ,  H01L23/3171 ,  H01L23/49816 ,  H01L23/525 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L24/48 ,  H01L24/73 ,  H01L25/0657 ,  H01L25/105 ,  H01L2224/02317 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05599 ,  H01L2224/13021 ,  H01L2224/13022 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/48145 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2225/06506 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06527 ,  H01L2225/06541 ,  H01L2225/06562 ,  H01L2225/1023 ,  H01L2225/1041 ,  H01L2225/1058 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2224/32145 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: Semiconductor devices and methods of forming the same, including forming a chip pad on a chip substrate, forming a passivation layer on the chip pad and the chip substrate, forming a first insulation layer on the passivation layer, forming a recess and a first opening in the first insulation layer, forming a second opening in the passivation layer to correspond to the first opening, forming a redistribution line in a redistribution line area of the recess, the first opening, and the second opening, forming a second insulation layer on the redistribution line and the first insulation layer, and forming an opening in the second insulation to expose a portion of the redistribution line as a redistribution pad.

Abstract translation: 半导体器件及其形成方法，包括在芯片衬底上形成芯片焊盘，在芯片焊盘和芯片衬底上形成钝化层，在钝化层上形成第一绝缘层，形成凹槽和第一开口 所述第一绝缘层在所述钝化层中形成对应于所述第一开口的第二开口，在所述凹部，所述第一开口和所述第二开口的再分布线区域中形成再分配线，在所述再分布上形成第二绝缘层 线和第一绝缘层，并且在第二绝缘体中形成开口以将再分配线的一部分暴露为再分布焊盘。

公开(公告)号：US20050133140A1

公开(公告)日：2005-06-23

申请号：US11014092

申请日：2004-12-15

Applicant: Byung Lee ,  Seung Lim ,  Sung Sin ,  Bong Sohn ,  Seok-Ho Kim ,  Dong Lim

Inventor： Byung Lee ,  Seung Lim ,  Sung Sin ,  Bong Sohn ,  Seok-Ho Kim ,  Dong Lim

IPC: B60C9/00 ,  B60C9/08 ,  B60C9/20 ,  D07B1/06 ,  B60C9/04 ,  D07B1/08

CPC classification number: D07B1/062 ,  B60C9/0007 ,  B60C9/08 ,  B60C9/2006 ,  D07B2201/2006 ,  D07B2201/2023 ,  D07B2201/2024 ,  D07B2201/2039 ,  D07B2201/2051 ,  D07B2201/2059 ,  D07B2201/2081 ,  D07B2205/3057 ,  D07B2401/208 ,  D07B2501/2046 ,  Y10T152/10855 ,  D07B2801/12 ,  D07B2801/10

Abstract: The object of this invention is to provide a steel cord, which has ultrafine steel filaments with a diameter of 0.04-0.14 mm stranded with each other so as to reinforce a tire carcass, and a radial tire for a passenger car using the same. The steel cord includes one core filament with a diameter of 0.04-0.14 mm and 4-7 sheath filaments, each having a diameter of 0.04-0.14 mm, spirally stranded around the core filament. At this time, the steel cord has a diameter of 0.2-0.5 mm and shear strength of 25-35 kgf. Additionally, each of the sheath filaments has a smaller diameter than the core filament, and the core filament and the sheath filaments are made of the steel filaments. The radial tire includes the tire carcass provided with the steel cord and a topping sheet, and the steel cord is embedded in the topping sheet such that a rubber gauge ratio is 200-500% and a rubber clearance ratio is 60-250%. The steel cord has improved physical properties, such as shear strength and durability, to reduce a thickness of a carcass including the steel cord, leading to the reduction of a weight of the radial tire. Furthermore, controlling stability and durability of the radial tire are improved, thereby reducing costs of maintenance of the passenger car.

Abstract translation: 本发明的目的是提供一种钢帘线，其具有彼此绞合的直径为0.04-0.14mm的超细钢丝，以加强轮胎胎体，以及使用该帘线的乘用车的子午线轮胎。 钢帘线包括直径为0.04-0.14mm的一根芯丝和4-7根长丝，各自具有0.04-0.14mm的直径，围绕芯丝螺旋绞合。 此时，钢帘线的直径为0.2-0.5mm，剪切强度为25-35kgf。 另外，每根护套长丝的直径小于芯丝，芯丝和护套长丝由钢丝制成。 子午线轮胎包括设置有钢丝帘线的轮胎胎体和顶板，并且钢帘线嵌入顶片中，使得橡胶规格比为200-500％，橡胶间隙率为60-250％。 钢帘线具有改善的物理性能，例如剪切强度和耐久性，以减少包括钢帘线的胎体的厚度，导致子午线轮胎的重量的降低。 此外，提高了子午线轮胎的稳定性和耐久性，从而降低了乘用车的维护成本。

公开(公告)号：US20050135704A1

公开(公告)日：2005-06-23

申请号：US10960980

申请日：2004-10-12

Applicant: Seok-Ho Kim

Inventor： Seok-Ho Kim

IPC: G06K9/20 ,  G06K9/34 ,  H04N1/401

CPC classification number: H04N1/401 ,  H04N1/4097

Abstract: A scanned image generating device, including a shading data calculation part to calculate shading data by scanning a white sheet, an average calculation part to calculate an average between an object pixel and neighboring pixels of the object pixel based on the shading data calculated by the shading data calculation part, a comparison part to compare a value of the object pixel, calculated by the shading data calculation part, to the average of values of the neighboring pixels, calculated by the average calculation part, an adjustable processing part to adjust the object pixel value calculated by the average calculation part, according to a result of comparison of the comparison part, and a filtering post-processing part such that the object pixel value adjusted by the adjustable processing part gradually changes with respect to the values of the neighboring pixels. Accordingly, the scanned image generating device may restrain influences of contamination such as dust or foreign substances occurring on a certain spot of a line, thereby enabling a high-quality image to be produced.

Abstract translation: 一种扫描图像生成装置，包括通过扫描白板来计算阴影数据的着色数据计算部，基于由阴影计算出的阴影数据计算目标像素与对象像素的相邻像素之间的平均值的平均计算部 数据计算部分，比较部分，用于将由阴影数据计算部分计算的对象像素的值与由平均计算部分计算的相邻像素的平均值进行比较;调整处理部分，用于调整对象像素 由平均计算部分计算的值根据比较部分的比较结果和滤波后处理部分，使得由可调处理部分调整的对象像素值相对于相邻像素的值逐渐变化。 因此，扫描图像生成装置可以抑制在某一点上发生的灰尘或异物等污染物的影响，从而能够产生高质量的图像。

公开(公告)号：US08175386B2

公开(公告)日：2012-05-08

申请号：US12257721

申请日：2008-10-24

Applicant: Seok-Ho Kim

Inventor： Seok-Ho Kim

IPC: G06K9/36

CPC classification number: H04N5/272 ,  H04N1/407 ,  H04N1/409

Abstract: An image acquiring apparatus includes: an image sensor which senses light reflected from an object to be read, and which detects an analog pixel value corresponding to the sensed reflected light; and a compensator which compensates the analog pixel value in its analog form for removing a background of the object contemporaneously as the object is being read in line(s).

Abstract translation: 图像获取装置包括：感测从要读取的对象反射的光并且检测与所感测的反射光相对应的模拟像素值的图像传感器; 以及补偿器，其补偿其模拟形式的模拟像素值，用于当对象正在被读取时同时移除对象的背景。

公开(公告)号：US5455964A

公开(公告)日：1995-10-03

申请号：US42426

申请日：1993-03-26

Applicant: David A. Roos ,  John R. Clewer ,  Seok-Ho Kim ,  James E. Malcolm ,  Andrew W. Brandt ,  Allan A. D'Souza ,  Adrian J. Morris ,  Matthew M. Mohebbi

Inventor： David A. Roos ,  John R. Clewer ,  Seok-Ho Kim ,  James E. Malcolm ,  Andrew W. Brandt ,  Allan A. D'Souza ,  Adrian J. Morris ,  Matthew M. Mohebbi

IPC: H03J7/02 ,  H04B7/185 ,  H04W48/12 ,  H04Q7/38 ,  G01S3/52 ,  H04B1/10 ,  H04B7/26

CPC classification number: H04B7/18506 ,  H03J7/02 ,  H04W48/12

Abstract: The frequency and power of transmissions in a mobile communication system, such as an air-to-ground telephony system, are stabilized without a priori knowledge of the system gain factors or frequency references. The ground station monitors the available channels and modifies a vacant channel broadcast message to provide information that the channel is available. In this way, the air terminals have knowledge of all available channels. The ground station transmits a pilot signal. Upon request by a user for a dial tone at the air terminal, the air terminal selects a vacant channel and scans for the pilot signal. The air terminal estimates a distance to the ground station and sets a power level of a seizing transmission based on the estimated distance. The air terminal also estimates a Doppler frequency shift of the selected channel due to the relative movement of the air terminal with respect to the ground station and sets a frequency of the seizing transmission based on the estimated Doppler frequency shift. The air terminal then transmits a channel seizing signal at a reduced bandwidth less than a full normal bandwidth to the ground station at the set level and frequency. The ground station measures the level and frequency of the seizing signal and transmits to the air terminal information acknowledging the seizure of the selected channel and reporting the level and frequency of the seizing signal. The air terminal corrects the transmitted level and frequency and then switches the transmission bandwidth to the full normal bandwidth at the corrected level.

Abstract translation: 移动通信系统（例如空对地电话系统）中的传输的频率和功率在没有系统增益因子或频率参考的先验知识的情况下是稳定的。 地面站监视可用频道并修改空闲频道广播消息以提供信道可用的信息。 这样，空中终端就可以获得所有可用频道的知识。 地面站发送导频信号。 根据用户在空中终端的拨号音请求，空中终端选择空闲信道并扫描导频信号。 空中终端估计到地面站的距离，并基于估计的距离设置占用传输的功率电平。 空中终端还估计由于空中终端相对于地面站的相对移动而选择的信道的多普勒频移，并且基于估计的多普勒频移来设置占用传输的频率。 然后，空中终端以设定的等级和频率向地面站发送小于全正常带宽的减少带宽的信道占用信号。 地面站测量占用信号的电平和频率，并向空中终端发送确认占用所选频道的信息，并报告占用信号的电平和频率。 空中终端校正发送的电平和频率，然后将发送带宽切换到校正电平的完全正常带宽。