公开(公告)号：US08456012B2

公开(公告)日：2013-06-04

申请号：US12568086

申请日：2009-09-28

申请人： Chang-Woo Shin ,  Hyun-Soo Chung ,  Eun-Chul Ahn ,  Jum-Gon Kim ,  Jin-Ho Chun

发明人： Chang-Woo Shin ,  Hyun-Soo Chung ,  Eun-Chul Ahn ,  Jum-Gon Kim ,  Jin-Ho Chun

IPC分类号： H01L23/48 ,  H01L23/52

CPC分类号： H01L21/76841 ,  H01L23/525 ,  H01L23/53238 ,  H01L24/02 ,  H01L24/13 ,  H01L2224/0231 ,  H01L2224/02331 ,  H01L2224/0235 ,  H01L2224/0401 ,  H01L2224/05599 ,  H01L2224/13099 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01327 ,  H01L2924/04941 ,  H01L2924/12044

摘要： A semiconductor device including an interconnection structure including a copper pad, a pad barrier layer and a metal redistribution layer, an interconnection structure thereof and methods of fabricating the same are provided. The semiconductor device includes a copper pad disposed on a first layer, a pad barrier layer including titanium disposed on the copper pad, an inorganic insulating layer disposed on the pad barrier layer, a buffer layer disposed on the inorganic insulating layer, wherein the inorganic insulating layer and the buffer layer expose a portion of the pad barrier layer, a seed metal layer disposed on the exposed buffer layer, a metal redistribution layer disposed on the seed metal layer, and a first protective layer disposed on the metal redistribution layer.

摘要翻译： 提供一种包括铜焊盘，焊盘阻挡层和金属再分布层的互连结构的半导体器件，其互连结构及其制造方法。 半导体器件包括设置在第一层上的铜焊盘，包括设置在铜焊盘上的钛的焊盘阻挡层，设置在焊盘阻挡层上的无机绝缘层，设置在无机绝缘层上的缓冲层，其中无机绝缘 所述缓冲层暴露所述焊盘阻挡层的一部分，设置在所述暴露的缓冲层上的种子金属层，设置在所述种子金属层上的金属再分配层以及设置在所述金属再分配层上的第一保护层。

公开(公告)号：US08431479B2

公开(公告)日：2013-04-30

申请号：US12797837

申请日：2010-06-10

申请人： Ki-Hyuk Kim ,  Nam-Seog Kim ,  Hyun-Soo Chung ,  Seok-Ho Kim ,  Myeong-Soon Park ,  Chang-Woo Shin

发明人： Ki-Hyuk Kim ,  Nam-Seog Kim ,  Hyun-Soo Chung ,  Seok-Ho Kim ,  Myeong-Soon Park ,  Chang-Woo Shin

IPC分类号： H01L21/4763

CPC分类号： H01L21/76813 ,  H01L21/561 ,  H01L21/76879 ,  H01L23/3114 ,  H01L23/3171 ,  H01L23/49816 ,  H01L23/525 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L24/48 ,  H01L24/73 ,  H01L25/0657 ,  H01L25/105 ,  H01L2224/02317 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05599 ,  H01L2224/13021 ,  H01L2224/13022 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/48145 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2225/06506 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06527 ,  H01L2225/06541 ,  H01L2225/06562 ,  H01L2225/1023 ,  H01L2225/1041 ,  H01L2225/1058 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2224/32145 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： Semiconductor devices and methods of forming the same, including forming a chip pad on a chip substrate, forming a passivation layer on the chip pad and the chip substrate, forming a first insulation layer on the passivation layer, forming a recess and a first opening in the first insulation layer, forming a second opening in the passivation layer to correspond to the first opening, forming a redistribution line in a redistribution line area of the recess, the first opening, and the second opening, forming a second insulation layer on the redistribution line and the first insulation layer, and forming an opening in the second insulation to expose a portion of the redistribution line as a redistribution pad.

摘要翻译： 半导体器件及其形成方法，包括在芯片衬底上形成芯片焊盘，在芯片焊盘和芯片衬底上形成钝化层，在钝化层上形成第一绝缘层，形成凹槽和第一开口 所述第一绝缘层在所述钝化层中形成对应于所述第一开口的第二开口，在所述凹部，所述第一开口和所述第二开口的再分布线区域中形成再分配线，在所述再分布上形成第二绝缘层 线和第一绝缘层，并且在第二绝缘体中形成开口以将再分配线的一部分暴露为再分布焊盘。

公开(公告)号：US20110104888A1

公开(公告)日：2011-05-05

申请号：US12797837

申请日：2010-06-10

申请人： Ki-Hyuk KIM ,  Nam-Seog Kim ,  Hyun-Soo Chung ,  Seok-Ho Kim ,  Myeong-Soon Park ,  Chang-Woo Shin

发明人： Ki-Hyuk KIM ,  Nam-Seog Kim ,  Hyun-Soo Chung ,  Seok-Ho Kim ,  Myeong-Soon Park ,  Chang-Woo Shin

IPC分类号： H01L21/768

CPC分类号： H01L21/76813 ,  H01L21/561 ,  H01L21/76879 ,  H01L23/3114 ,  H01L23/3171 ,  H01L23/49816 ,  H01L23/525 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L24/48 ,  H01L24/73 ,  H01L25/0657 ,  H01L25/105 ,  H01L2224/02317 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05599 ,  H01L2224/13021 ,  H01L2224/13022 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/48145 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2225/06506 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06527 ,  H01L2225/06541 ,  H01L2225/06562 ,  H01L2225/1023 ,  H01L2225/1041 ,  H01L2225/1058 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2224/32145 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： Semiconductor devices and methods of forming the same, including forming a chip pad on a chip substrate, forming a passivation layer on the chip pad and the chip substrate, forming a first insulation layer on the passivation layer, forming a recess and a first opening in the first insulation layer, forming a second opening in the passivation layer to correspond to the first opening, forming a redistribution line in a redistribution line area of the recess, the first opening, and the second opening, forming a second insulation layer on the redistribution line and the first insulation layer, and forming an opening in the second insulation to expose a portion of the redistribution line as a redistribution pad.

摘要翻译： 半导体器件及其形成方法，包括在芯片衬底上形成芯片焊盘，在芯片焊盘和芯片衬底上形成钝化层，在钝化层上形成第一绝缘层，形成凹槽和第一开口 所述第一绝缘层在所述钝化层中形成对应于所述第一开口的第二开口，在所述凹部，所述第一开口和所述第二开口的再分布线区域中形成再分配线，在所述再分布上形成第二绝缘层 线和第一绝缘层，并且在第二绝缘体中形成开口以将再分配线的一部分暴露为再分布焊盘。

公开(公告)号：US20100285635A1

公开(公告)日：2010-11-11

申请号：US12840656

申请日：2010-07-21

申请人： Cha-Jea Jo ,  Myung-Kee Chung ,  Nam-Seog Kim ,  In-Young Lee ,  Seok-Ho Kim ,  Ho-Jin Lee ,  Ju-Il Choi ,  Chang-Woo Shin

发明人： Cha-Jea Jo ,  Myung-Kee Chung ,  Nam-Seog Kim ,  In-Young Lee ,  Seok-Ho Kim ,  Ho-Jin Lee ,  Ju-Il Choi ,  Chang-Woo Shin

IPC分类号： H01L21/60 ,  H01L21/50

CPC分类号： H01L23/3128 ,  H01L21/76898 ,  H01L23/481 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/05001 ,  H01L2224/05009 ,  H01L2224/05025 ,  H01L2224/05124 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/13025 ,  H01L2224/16145 ,  H01L2225/06513 ,  H01L2225/06527 ,  H01L2225/06541 ,  H01L2924/00014 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/04941 ,  H01L2924/15311 ,  H01L2224/05599

摘要： A chip stack package includes a substrate, a plurality of chips, a plurality of adhesive layers and a plug. The substrate has a wiring pattern and a seed layer formed on the wiring pattern. Each of the chips has an electrode pad and a first through-hole that penetrates the electrode pad. The chips are stacked such that the first through-holes are aligned on the seed layer of the substrate. The adhesive layers are interposed between the substrate and one of the chips, as well as between the chips. Each of the adhesive layers has a second through-hole connected to the first through-hole. The plug fills up the first through-holes and the second through-holes and electrically connects the electrode pads to the wiring pattern of the substrate. A cross-sectional area of the plug in the second through-holes may be larger than that of the plug in the first through-holes.

摘要翻译： 芯片堆叠封装包括基板，多个芯片，多个粘合剂层和插头。 基板具有形成在布线图案上的布线图案和种子层。 每个芯片具有电极焊盘和穿过电极焊盘的第一通孔。 芯片被堆叠，使得第一通孔在衬底的籽晶层上排列。 粘合层介于基片和芯片之一之间以及芯片之间。 每个粘合层具有连接到第一通孔的第二通孔。 插头填充第一通孔和第二通孔，并将电极焊盘电连接到衬底的布线图案。 第二通孔中的插塞的横截面面积可以大于第一通孔中的插头的横截面面积。

公开(公告)号：US20130151451A1

公开(公告)日：2013-06-13

申请号：US13555382

申请日：2012-07-23

申请人： Jun Haeng Lee ,  Chang-Woo Shin ,  Hyun Surk Ryu ,  Keun Joo Park

发明人： Jun Haeng Lee ,  Chang-Woo Shin ,  Hyun Surk Ryu ,  Keun Joo Park

IPC分类号： G06N3/04

CPC分类号： G06N3/06 ,  G06N3/049 ,  G06N3/063

摘要： A spiking neuron-based working memory device is provided. The spiking neuron-based working memory device includes an input interface configured to convert input spike signals into respective burst signals having predetermined forms, and output a sequence of the burst signals, the burst signals corresponding to the input spike signals in a burst structure, and two or more memory elements (MEs) configured to sequentially store features respectively corresponding to the outputted sequence of the burst signals, each of the MEs continuously outputting spike signals respectively corresponding to the stored features.

摘要翻译： 提供了一种基于神经元的工作记忆装置。 尖峰神经元工作存储装置包括：输入接口，被配置为将输入尖峰信号转换成具有预定形式的各自的脉冲串信号，并输出脉冲串信号序列，脉冲串信号对应于突发结构中的输入尖峰信号;以及 两个或多个存储器元件（ME）被配置为顺序地存储分别对应于所输出的突发信号序列的特征，每个ME连续地输出对应于存储的特征的尖峰信号。

公开(公告)号：US09037524B2

公开(公告)日：2015-05-19

申请号：US13555382

申请日：2012-07-23

申请人： Jun Haeng Lee ,  Chang-Woo Shin ,  Hyun Surk Ryu ,  Keun Joo Park

发明人： Jun Haeng Lee ,  Chang-Woo Shin ,  Hyun Surk Ryu ,  Keun Joo Park

IPC分类号： G06E1/00 ,  G06N3/06

CPC分类号： G06N3/06 ,  G06N3/049 ,  G06N3/063

摘要： A spiking neuron-based working memory device is provided. The spiking neuron-based working memory device includes an input interface configured to convert input spike signals into respective burst signals having predetermined forms, and output a sequence of the burst signals, the burst signals corresponding to the input spike signals in a burst structure, and two or more memory elements (MEs) configured to sequentially store features respectively corresponding to the outputted sequence of the burst signals, each of the MEs continuously outputting spike signals respectively corresponding to the stored features.

摘要翻译： 提供了一种基于神经元的工作记忆装置。 尖峰神经元工作存储装置包括：输入接口，被配置为将输入尖峰信号转换成具有预定形式的各自的脉冲串信号，并输出脉冲串信号序列，脉冲串信号对应于突发结构中的输入尖峰信号;以及 两个或多个存储器元件（ME）被配置为顺序地存储分别对应于所输出的突发信号序列的特征，每个ME连续地输出对应于存储的特征的尖峰信号。

公开(公告)号：US20080157287A1

公开(公告)日：2008-07-03

申请号：US12003798

申请日：2008-01-02

申请人： Ju-Il Choi ,  Cha-Jea Jo ,  Seok-Ho Kim ,  Chang-Woo Shin

发明人： Ju-Il Choi ,  Cha-Jea Jo ,  Seok-Ho Kim ,  Chang-Woo Shin

IPC分类号： H01L21/768 ,  H01L23/48

CPC分类号： H01L25/0657 ,  H01L21/76898 ,  H01L2224/05001 ,  H01L2224/05009 ,  H01L2224/05181 ,  H01L2224/0557 ,  H01L2224/13025 ,  H01L2224/16 ,  H01L2224/16145 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2225/06544 ,  H01L2225/06565 ,  H01L2924/00014 ,  H01L2224/05599

摘要： A semiconductor device and methods of forming the same are provided. The methods may include forming a hole in a preliminary semiconductor substrate, forming an insulating layer in the hole of the preliminary semiconductor substrate, forming a plating conductive layer on the insulating layer and the preliminary semiconductor substrate, forming a seed metal layer contacting the plating conductive layer at a lower portion of the hole and growing the seed metal layer to form a through-silicon via (TSV). The TSV may be formed through an electroplating process such that the seed metal layer grows from the lower portion of the hole to an upper portion of the hole.

摘要翻译： 提供半导体器件及其形成方法。 所述方法可以包括在初步半导体衬底中形成孔，在初步半导体衬底的孔中形成绝缘层，在绝缘层和初级半导体衬底上形成电镀导电层，形成与电镀导电性接触的晶种金属层 层，并且生长种子金属层以形成穿硅通孔（TSV）。 TSV可以通过电镀工艺形成，使得种子金属层从孔的下部生长到孔的上部。

公开(公告)号：US08088648B2

公开(公告)日：2012-01-03

申请号：US12840656

申请日：2010-07-21

申请人： Cha-Jea Jo ,  Myung-Kee Chung ,  Nam-Seog Kim ,  In-Young Lee ,  Seok-Ho Kim ,  Ho-Jin Lee ,  Ju-Il Choi ,  Chang-Woo Shin

发明人： Cha-Jea Jo ,  Myung-Kee Chung ,  Nam-Seog Kim ,  In-Young Lee ,  Seok-Ho Kim ,  Ho-Jin Lee ,  Ju-Il Choi ,  Chang-Woo Shin

IPC分类号： H01L21/50 ,  H01L21/60

CPC分类号： H01L23/3128 ,  H01L21/76898 ,  H01L23/481 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/05001 ,  H01L2224/05009 ,  H01L2224/05025 ,  H01L2224/05124 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/13025 ,  H01L2224/16145 ,  H01L2225/06513 ,  H01L2225/06527 ,  H01L2225/06541 ,  H01L2924/00014 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/04941 ,  H01L2924/15311 ,  H01L2224/05599

摘要： A chip stack package includes a substrate, a plurality of chips, a plurality of adhesive layers and a plug. The substrate has a wiring pattern and a seed layer formed on the wiring pattern. Each of the chips has an electrode pad and a first through-hole that penetrates the electrode pad. The chips are stacked such that the first through-holes are aligned on the seed layer of the substrate. The adhesive layers are interposed between the substrate and one of the chips, as well as between the chips. Each of the adhesive layers has a second through-hole connected to the first through-hole. The plug fills up the first through-holes and the second through-holes and electrically connects the electrode pads to the wiring pattern of the substrate. A cross-sectional area of the plug in the second through-holes may be larger than that of the plug in the first through-holes.

摘要翻译： 芯片堆叠封装包括基板，多个芯片，多个粘合剂层和插头。 基板具有形成在布线图案上的布线图案和种子层。 每个芯片具有电极焊盘和穿过电极焊盘的第一通孔。 芯片被堆叠，使得第一通孔在衬底的籽晶层上排列。 粘合层介于基片和芯片之一之间以及芯片之间。 每个粘合层具有连接到第一通孔的第二通孔。 插头填充第一通孔和第二通孔，并将电极焊盘电连接到衬底的布线图案。 第二通孔中的插塞的横截面面积可以大于第一通孔中的插头的横截面面积。

公开(公告)号：US20080157332A1

公开(公告)日：2008-07-03

申请号：US12000384

申请日：2007-12-12

申请人： Cha-Jea Jo ,  Seok-Ho Kim ,  Ju-Il Choi ,  Chang-Woo Shin

发明人： Cha-Jea Jo ,  Seok-Ho Kim ,  Ju-Il Choi ,  Chang-Woo Shin

IPC分类号： H01L23/538 ,  H01L21/58

CPC分类号： H01L25/0657 ,  H01L21/6835 ,  H01L24/24 ,  H01L24/82 ,  H01L25/50 ,  H01L2224/24145 ,  H01L2224/48463 ,  H01L2225/06524 ,  H01L2225/06551 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/014 ,  H01L2924/15311 ,  H01L2924/1532 ,  H01L2924/19107

摘要： A stacked semiconductor package may include: a substrate; semiconductor packages stacked on the substrate; an interconnection member formed on edges of the semiconductor packages; and a conductive reinforcement member formed on the interconnection member. Each of the semiconductor packages may include a conductive line. The interconnection member may electrically connect the conductive line of the semiconductor packages to the conductive line of at least one other semiconductor package. A method of manufacturing a stacked semiconductor package may include: forming semiconductor packages; stacking the semiconductor packages on a substrate; forming a mask pattern on the semiconductor packages and the substrate to expose the edges of the semiconductor packages; performing an electroless plating process on the edges of the semiconductor packages to form a seed layer; and performing an electroplating process on the seed layer to form an interconnection member for electrically connecting the conductive lines to each other.

摘要翻译： 层叠的半导体封装可以包括：衬底; 堆叠在基板上的半导体封装; 形成在所述半导体封装的边缘上的互连构件; 以及形成在所述互连构件上的导电加强构件。 每个半导体封装可以包括导线。 互连构件可将半导体封装的导线电连接至至少一个其它半导体封装的导线。 层叠半导体封装的制造方法可以包括：形成半导体封装; 将半导体封装堆叠在衬底上; 在所述半导体封装和所述衬底上形成掩模图案以暴露所述半导体封装的边缘; 在半导体封装的边缘上进行化学镀处理以形成种子层; 以及在种子层上进行电镀处理以形成用于将导线彼此电连接的互连构件。