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    Plasma-based chemical source device and method of use thereof
    1.
    发明授权
    Plasma-based chemical source device and method of use thereof 有权
    等离子体化学源装置及其使用方法

    公开(公告)号：US09288886B2

    公开(公告)日：2016-03-15

    申请号：US12995106

    申请日：2009-05-29

    申请人： Il-Gyo Koo ,  Cameron A. Moore ,  George J. Collins

    发明人： Il-Gyo Koo ,  Cameron A. Moore ,  George J. Collins

    IPC分类号： H05H1/24 ,  H01J37/32 ,  A61B18/04 ,  C23C16/513

    CPC分类号： H05H1/24 ,  A61B18/042 ,  C23C16/513 ,  H01J37/32348 ,  H01J37/3255 ,  H05H1/2406 ,  H05H2001/2412 ,  H05H2001/2418 ,  H05H2001/2431 ,  H05H2001/2443 ,  H05H2001/245

    摘要： The present disclosure provides for a plasma system including a plasma device coupled to a power source, an ionizable media source and a precursor source. During operation, the ionizable media source provides ionizable media and the precursor ionizable media source provides one or more chemical species, photons at specific wavelengths, as well as containing various reactive functional groups and/or components to treat the workpiece surface by working in concert for synergetic selective tissue effects. The chemical species and the ionizable gas are mixed either upstream or midstream from an ignition point of the plasma device and once mixed, are ignited therein under application of electrical energy from the power source. As a result, a plasma effluent and photon source is formed, which carries the ignited plasma feedstock and resulting mixture of reactive species to a workpiece surface to perform a predetermined reaction.

    摘要翻译： 本公开提供了一种等离子体系统，其包括耦合到电源，可电离介质源和前体源的等离子体装置。 在操作期间，可离子化介质源提供可离子化介质，并且前体可离子化介质源提供一个或多个化学物质，特定波长的光子，以及含有各种反应性官能团和/或组分以通过一起工作来处理工件表面 协同选择性组织效应。 化学物质和可电离气体在等离子体装置的点火点的上游或中游混合，并且一旦混合，在施加来自电源的电能下被点燃。 结果，形成等离子体流出物和光子源，其将点燃的等离子体原料和所产生的反应物质混合物携带到工件表面以进行预定的反应。

    LIQUID-GAS INTERFACE PLASMA DEVICE
    3.
    发明申请
    LIQUID-GAS INTERFACE PLASMA DEVICE 有权
    液体气界面等离子体装置

    公开(公告)号：US20130059273A1

    公开(公告)日：2013-03-07

    申请号：US13637340

    申请日：2010-03-31

    申请人： Il-Gyo Koo ,  Myeong Yeol Choi ,  Jeremiah H. Collins ,  Cameron A. Moore ,  Abdur Rahman ,  George J. Collins

    发明人： Il-Gyo Koo ,  Myeong Yeol Choi ,  Jeremiah H. Collins ,  Cameron A. Moore ,  Abdur Rahman ,  George J. Collins

    IPC分类号： A61C17/00

    CPC分类号： A61C19/06 ,  A61C19/066 ,  H05H1/2406 ,  H05H1/48 ,  H05H2001/2412

    摘要： A method for whitening teeth is disclosed. The method includes supplying a liquid sufficient to at least partially submerge a portion of a tooth; positioning a plasma device adjacent to the submerged portion of the tooth; supplying ionizable media to the plasma device; and igniting the ionizable media at the plasma device sufficient to form a plasma effluent in the presence of the liquid at the distal portion, whereby the plasma effluent reacts with the liquid to form at least one reactive species that interacts selectively with foreign matter disposed on the tooth.

    摘要翻译： 公开了一种美白牙齿的方法。 该方法包括供应足以至少部分地淹没一部分牙齿的液体; 将等离子体装置定位在与所述牙齿的浸没部分相邻的位置; 向等离子体装置供应可电离介质; 并且在所述等离子体装置处点燃足以在所述远端部分处的所述液体存在下形成等离子体流出物的所述可离子化介质，由此所述等离子体流出物与所述液体反应以形成至少一种反应性物质，所述反应物质选择性地与设置在所述液体上的异物相互作用 齿。

    PLASMA-BASED CHEMICAL SOURCE DEVICE AND METHOD OF USE THEREOF
    4.
    发明申请
    PLASMA-BASED CHEMICAL SOURCE DEVICE AND METHOD OF USE THEREOF 有权
    基于等离子体的化学源装置及其使用方法

    公开(公告)号：US20110139751A1

    公开(公告)日：2011-06-16

    申请号：US12995106

    申请日：2009-05-29

    申请人： Il-Gyo Koo ,  Cameron A. Moore ,  George J. Collins

    发明人： Il-Gyo Koo ,  Cameron A. Moore ,  George J. Collins

    IPC分类号： C23F1/08 ,  C23F1/00 ,  C23C16/455 ,  C23C16/50 ,  C23C16/52

    CPC分类号： H05H1/24 ,  A61B18/042 ,  C23C16/513 ,  H01J37/32348 ,  H01J37/3255 ,  H05H1/2406 ,  H05H2001/2412 ,  H05H2001/2418 ,  H05H2001/2431 ,  H05H2001/2443 ,  H05H2001/245

    摘要： The present disclosure provides for a plasma system including a plasma device coupled to a power source, an ionizable media source and a precursor source. During operation, the ionizable media source provides ionizable media and the precursor ionizable media source provides one or more chemical species, photons at specific wavelengths, as well as containing various reactive functional groups and/or components to treat the workpiece surface by working in concert for synergetic selective tissue effects. The chemical species and the ionizable gas are mixed either upstream or midstream from an ignition point of the plasma device and once mixed, are ignited therein under application of electrical energy from the power source. As a result, a plasma effluent and photon source is formed, which carries the ignited plasma feedstock and resulting mixture of reactive species to a workpiece surface to perform a predetermined reaction.

    摘要翻译： 本公开提供了一种等离子体系统，其包括耦合到电源，可电离介质源和前体源的等离子体装置。 在操作期间，可离子化介质源提供可离子化介质，并且前体可离子化介质源提供一个或多个化学物质，特定波长的光子，以及含有各种反应性官能团和/或组分以通过一起工作来处理工件表面 协同选择性组织效应。 化学物质和可电离气体在等离子体装置的点火点的上游或中游混合，并且一旦混合，在施加来自电源的电能下被点燃。 结果，形成等离子体流出物和光子源，其将点燃的等离子体原料和所产生的反应物质混合物携带到工件表面以进行预定的反应。

    Low-pressure mercury resonance radiation source
    7.
    发明授权
    Low-pressure mercury resonance radiation source 失效
    低压汞共振辐射源

    公开(公告)号：US4974227A

    公开(公告)日：1990-11-27

    申请号：US421992

    申请日：1989-10-16

    申请人： Masahiro Saita ,  Dai Sugimoto ,  Masami Eishima ,  Shuzo Hattori ,  Yoshiyuki Uchida ,  George J. Collins

    发明人： Masahiro Saita ,  Dai Sugimoto ,  Masami Eishima ,  Shuzo Hattori ,  Yoshiyuki Uchida ,  George J. Collins

    IPC分类号： G03F7/20 ,  H01J61/38 ,  H01J61/72 ,  H01L21/027

    CPC分类号： G03F7/70016 ,  H01J61/38 ,  H01J61/72

    摘要： A low-pressure mercury resonance radiation source includes a discharge lamp containing mercury vapor and producing broad band radiation directly emitted from the mercury vapor through excitation of same by electric discharge, and a resonance cell containing mercury vapor and disposed adjacent the discharge lamp for absorbing the broad band radiation and reemitting narrow band mercury resonance radiation. The pressure of the mercury vapor within the resonance cell is controlled to a first predetermined value by controlling the temperature of a first mercury sump arranged within the resonance cell, and the pressure of the mercury vapor within the discharge lamp is controlled to a second predetermined value, preferably by controlling the temperature of a second mercury sump arranged in a side tube communicating with the discharge lamp.

    摘要翻译： 低压水银共振辐射源包括一个包含汞蒸汽的放电灯，并通过放电从其产生通过其汞激发而直接从汞蒸汽发射的宽带辐射，以及一个包含汞蒸气的谐振元件，邻近放电灯放置 宽带辐射和再发射窄带汞共振辐射。 通过控制设置在共振室内的第一汞池的温度，将共振室内的汞蒸汽的压力控制在第一规定值，将放电灯内的水银蒸汽的压力控制在第二规定值 优选通过控制布置在与放电灯连通的侧管中的第二汞池的温度。

    Wide area source of multiply ionized atomic or molecular species
    8.
    发明授权
    Wide area source of multiply ionized atomic or molecular species 失效
    多电离原子或分子物种的广泛来源

    公开(公告)号：US4737688A

    公开(公告)日：1988-04-12

    申请号：US888501

    申请日：1986-07-22

    申请人： George J. Collins ,  Zeng-gi Yu

    发明人： George J. Collins ,  Zeng-gi Yu

    IPC分类号： H01J27/02 ,  H01J27/08 ,  H01J37/08 ,  H05H1/02 ,  H05H1/03

    CPC分类号： H01J27/022 ,  H01J27/08 ,  H01J37/08

    摘要： Apparatus for generating multiply charged ions from a source of wide area for use in ion implantation is based upon electron beam plasma interactions which more efficiently create a large density of multiply ionized species than conventional plasma sources over a wide area (1-20 cm in diameter). The beam electrons are generated from a glow discharge electron gun operating in the abnormal glow discharge state. More multiply ionized species are created because of the larger number of electrons at high energy present in a beam created discharge as compared to conventional hollow cathode or thermionic cathode ion sources. By using a ring-shaped cold cathode beam electron generator it is possible to realize a wide area source 2-20 cm in diameter. This multiple ion source permits the realization of a fixed ion implantation energy using a lower electrostatic potential because multiply ionized species are accelerated rather than singly ionized species.

    摘要翻译： 用于从用于离子注入的宽区域产生多电荷离子的设备基于电子束等离子体相互作用，其在广泛区域（直径为1-20cm）上更有效地产生比常规等离子体源大的多电离离子源的大密度 ）。 束电子由在异常辉光放电状态下工作的辉光放电电子枪产生。 由于与传统的空心阴极或热离子阴极离子源相比，在产生放电的光束中存在较高的能量的电子数量较多，所以产生更多的多重离子化物质。 通过使用环形冷阴极射束电子发生器，可以实现直径为2-20厘米的宽范围源。 该多重离子源允许使用较低的静电电位实现固定的离子注入能量，因为多个离子化物质被加速而不是单一电离物质。

    Process for fabricating a bipolar transistor with a thin base and an abrupt base-collector junction
    9.
    发明授权
    Process for fabricating a bipolar transistor with a thin base and an abrupt base-collector junction 失效
    用于制造具有薄的基极和突然的基极 - 集电极结的双极晶体管的工艺

    公开(公告)号：US4523370A

    公开(公告)日：1985-06-18

    申请号：US558252

    申请日：1983-12-05

    申请人： Paul A. Sullivan ,  George J. Collins

    发明人： Paul A. Sullivan ,  George J. Collins

    IPC分类号： H01L29/73 ,  H01L21/205 ,  H01L21/331 ,  H01L29/04 ,  H01L29/732 ,  H01L21/322

    CPC分类号： H01L29/66287 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0262 ,  H01L29/04 ,  H01L29/7325 ,  Y10S148/011 ,  Y10S148/092

    摘要： A process for fabricating a bipolar transistor with a thin base and an abrupt base-collector junction includes the steps of depositing a thin layer of polycrystalline or amorphous silicon base material in a single crystal collector region, while in-situ doping the deposited silicon with boron atoms, and thereafter, recrystallizing the deposited silicon layer by thermal-pulse annealing at a temperature high enough to effect recrystallization and solid phase epitaxial regrowth while low enough to minimize interdiffusion of dopants between the base and collector.The process further includes providing the transistor fabricated by the aforedescribed steps with an abrupt base-emitter junction. This is accomplished by depositing n.sup.++ doped polysilicon with a LPCVD process and thereafter thermal annealing the polysilicon.

    摘要翻译： 用于制造具有薄基极和突变基极集电极结的双极晶体管的工艺包括以下步骤：在单晶集电极区域中沉积多晶或非晶硅基材料薄层，同时用硼原位掺杂沉积的硅 然后通过在足够高的温度下进行热脉冲退火来重结晶沉积的硅层，以实现再结晶和固相外延再生长，同时足够低以最小化基极和集电极之间的掺杂剂的相互扩散。 该方法还包括通过上述步骤提供具有突变的基极 - 发射极结的晶体管。 这通过用LPCVD工艺沉积n ++掺杂的多晶硅，然后对多晶硅进行热退火来实现。

    Electron beam induced chemical vapor deposition
    10.
    发明授权
    Electron beam induced chemical vapor deposition 失效
    电子束诱导化学气相沉积

    公开(公告)号：US4509451A

    公开(公告)日：1985-04-09

    申请号：US479987

    申请日：1983-03-29

    申请人： George J. Collins ,  Lance R. Thompson ,  Jorge J. Rocca ,  Paul K. Boyer

    发明人： George J. Collins ,  Lance R. Thompson ,  Jorge J. Rocca ,  Paul K. Boyer

    IPC分类号： C23C16/48 ,  C23C16/513 ,  H01J37/32 ,  H01L21/205 ,  H01L21/268 ,  H01L21/314 ,  H01L21/316 ,  H01L21/318 ,  C23C13/08 ,  B05D3/06

    CPC分类号： H01J37/32018 ,  C23C16/487 ,  C23C16/513 ,  H01L21/02107 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02178 ,  H01L21/02227 ,  H01L21/02252 ,  H01L21/02277 ,  H01L21/2686 ,  H01L21/3145 ,  H01L21/31612 ,  H01L21/3162 ,  H01L21/31654 ,  H01L21/318 ,  H01L21/3185

    摘要： Applicants have invented a new low temperature method (50.degree. C. to 500.degree. C.) to deposit and grow microelectronic thin films using cold cathode electron beams to initiate and sustain both gas phase and surface chemical reactions. The new method uses electron beams generated by glow discharge electron guns. Secondary electrons are emitted from these electron guns following ion and fast neutral bombardment upon cathode surfaces and secondary electrons so formed are accelerated in the cathode sheath.Our method uses the plasma generated electron beams to decompose reactant molecules directly by electron impact and indirectly by the vacuum ultraviolet radiation generated following rare gas electron collisions in the beam region. The reactant molecules can be in the gas phase or adsorbed on substrate surfaces. The electron beams are spatially confined and excite only a localized region above the substrate so that direct plasma bombardment of the substrate is avoided. The film growth and deposition reactions take place on a heated (50.degree. C.-500.degree. C.) substrate therefore with reduced radiation damage at high deposition and growth rates required for in line single wafer processing (>1000.ANG./min). Microelectronic films such as insulators, conductors and semiconductors can be deposited and native films such as oxides and nitrides can be grown with the use of electron beam assisted decomposition of gas molecule reactants.

    摘要翻译： 申请人已经发明了一种新的低温方法（50℃至500℃），以使用冷阴极电子束沉积和生长微电子薄膜，以启动和维持气相和表面化学反应。 新方法使用由辉光放电电子枪产生的电子束。 在阴极表面离子和快速中性轰击之后，从这些电子枪发射二次电子，所以形成的二次电子在阴极护套中被加速。 我们的方法使用等离子体生成的电子束直接通过电子轰击分解反应物分子，并间接地通过在光束区域中稀有气体电子碰撞之后产生的真空紫外线辐射。 反应物分子可以处于气相或吸附在基材表面上。 电子束在空间上被限制并仅激发基板上方的局部区域，从而避免了基板的直接等离子体轰击。 因此，薄膜生长和沉积反应在加热（50℃-500℃）的基底上进行，因此在线性单晶片处理（> 1000安培/分钟）期间所需的高沉积和生长速率下具有降低的辐射损伤。 可以沉积诸如绝缘体，导体和半导体的微电子膜，并且可以利用气体分子反应物的电子束辅助分解来生长天然膜，例如氧化物和氮化物。