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    Method of manufacturing thin crystalline silicon solar cells using recrystallization
    3.
    发明申请
    Method of manufacturing thin crystalline silicon solar cells using recrystallization 审中-公开
    使用重结晶制造薄晶体硅太阳能电池的方法

    公开(公告)号：US20110315186A1

    公开(公告)日：2011-12-29

    申请号：US13106728

    申请日：2011-05-12

    申请人： James M. Gee ,  Nag B. Patibandla ,  Kaushal K. Singh ,  Omkaram Nalamasu

    发明人： James M. Gee ,  Nag B. Patibandla ,  Kaushal K. Singh ,  Omkaram Nalamasu

    IPC分类号： H01L31/0224 ,  H01L31/0216 ,  H01L31/18 ,  H01L31/0236 ,  H01L31/042 ,  H01L31/05

    CPC分类号： H01L31/1804 ,  H01L31/022441 ,  H01L31/0682 ,  H01L31/1892 ,  Y02E10/547 ,  Y02P70/521

    摘要： Embodiments of the invention provide a thin single crystalline silicon film solar cell and methods of forming the same. The method includes forming a thin single crystalline silicon layer on a silicon growth substrate, followed by forming front or rear solar cell structures on and/or in the thin single crystalline silicon film. The method also includes attaching the thin single crystalline silicon film to a mechanical carrier and then separating the growth substrate from the thin single crystalline silicon film along a cleavage plane formed between the growth substrate and the thin single crystalline silicon film. Front or rear solar cell structures are then formed on and/or in the thin single crystalline silicon film opposite the mechanical carrier to complete formation of the solar cell.

    摘要翻译： 本发明的实施例提供一种薄单晶硅膜太阳能电池及其形成方法。 该方法包括在硅生长衬底上形成薄的单晶硅层，随后在薄的单晶硅膜上和/或上形成前或后太阳能电池结构。 该方法还包括将薄单晶硅膜附着到机械载体上，然后沿生长衬底和薄单晶硅膜之间形成的解理平面从薄单晶硅膜分离生长衬底。 然后在与机械载体相对的薄单晶硅膜上和/或上形成正面或背面的太阳能电池结构，以完成太阳能电池的形成。

    CARBON NANOTUBE-BASED SOLAR CELLS
    4.
    发明申请
    CARBON NANOTUBE-BASED SOLAR CELLS 有权
    基于碳纳米管的太阳能电池

    公开(公告)号：US20100313951A1

    公开(公告)日：2010-12-16

    申请号：US12797529

    申请日：2010-06-09

    申请人： Omkaram Nalamasu ,  Charles Gay ,  Victor L. Pushparaj ,  Kaushal K. Singh ,  Robert J. Visser ,  Majeed A. Foad ,  Ralf Hofmann

    发明人： Omkaram Nalamasu ,  Charles Gay ,  Victor L. Pushparaj ,  Kaushal K. Singh ,  Robert J. Visser ,  Majeed A. Foad ,  Ralf Hofmann

    IPC分类号： H01L31/04 ,  H01L31/18 ,  C23C16/22

    CPC分类号： H01L31/022425 ,  B82Y10/00 ,  H01L31/0322 ,  H01L31/03529 ,  H01L31/0384 ,  H01L31/0749 ,  H01L51/0048 ,  H01L51/4213 ,  Y02E10/541 ,  Y02P70/521

    摘要： Solar cells are provided with carbon nanotubes (CNTs) which are used: to define a micron/sub-micron geometry of the solar cells; and/or as charge transporters for efficiently removing charge carriers from the absorber layer to reduce the rate of electron-hole recombination in the absorber layer. A solar cell may comprise: a substrate; a multiplicity of areas of metal catalyst on the surface of the substrate; a multiplicity of carbon nanotube bundles formed on the multiplicity of areas of metal catalyst, each bundle including carbon nanotubes aligned roughly perpendicular to the surface of the substrate; and a photoactive solar cell layer formed over the carbon nanotube bundles and exposed surfaces of the substrate, wherein the photoactive solar cell layer is continuous over the carbon nanotube bundles and the exposed surfaces of the substrate. The photoactive solar cell layer may be comprised of amorphous silicon p/i/n thin films; although, concepts of the present invention are also applicable to solar cells with absorber layers of microcrystalline silicon, SiGe, carbon doped microcrystalline silicon, CIS, CIGS, CISSe and various p-type II-VI binary compounds and ternary and quaternary compounds.

    摘要翻译： 太阳能电池提供有碳纳米管（CNT），其用于限定太阳能电池的微米/亚微米几何形状; 和/或作为电荷转运体，用于从吸收层有效去除电荷载体以降低吸收层中电子 - 空穴复合的速率。 太阳能电池可以包括：基底; 在基材表面上的金属催化剂的多个区域; 形成在金属催化剂的多个区域上的多个碳纳米管束，每个束包括大致垂直于基板的表面排列的碳纳米管; 以及形成在所述碳纳米管束和所述基板的露出表面上的光活性太阳能电池层，其中所述光电太阳能电池层在所述碳纳米管束和所述基板的暴露表面上连续。 光电太阳能电池层可以由非晶硅p / i / n薄膜组成; 尽管本发明的概念也适用于具有微晶硅，SiGe，碳掺杂微晶硅，CIS，CIGS，CISSe和各种p型II-VI二元化合物和三元和四元化合物的吸收层的太阳能电池。

    COPPER DELAFOSSITE TRANSPARENT P-TYPE SEMICONDUCTOR THIN FILM DEVICES
    5.
    发明申请
    COPPER DELAFOSSITE TRANSPARENT P-TYPE SEMICONDUCTOR THIN FILM DEVICES 有权
    铜箔透明P型薄膜半导体薄膜器件

    公开(公告)号：US20100175755A1

    公开(公告)日：2010-07-15

    申请号：US12643380

    申请日：2009-12-21

    申请人： Kaushal K. SINGH ,  Omkaram NALAMASU ,  Nety M. KRISHNA ,  Michael SNURE ,  Ashutosh TIWARI

    发明人： Kaushal K. SINGH ,  Omkaram NALAMASU ,  Nety M. KRISHNA ,  Michael SNURE ,  Ashutosh TIWARI

    IPC分类号： H01L31/032 ,  H01L21/16 ,  H01L29/786

    CPC分类号： H01L51/4226 ,  C25B1/003 ,  H01G9/2031 ,  Y02E10/542 ,  Y02E10/549 ,  Y02P70/521

    摘要： Methods for fabrication of copper delafossite materials include a low temperature sol-gel process for synthesizing CuBO2 powders, and a pulsed laser deposition (PLD) process for forming thin films of CuBO2, using targets made of the CuBO2 powders. The CuBO2 thin films are optically transparent p-type semiconductor oxide thin films. Devices with CuBO2 thin films include p-type transparent thin film transistors (TTFT) comprising thin film CuBO2 as a channel layer and thin film solar cells with CuBO2 p-layers. Solid state dye sensitized solar cells (SS-DSSC) comprising CuBO2 in various forms, including “core-shell” and “nano-couple” particles, and methods of manufacture, are also described.

    摘要翻译： 铜铁矿石材料的制造方法包括用于合成CuBO 2粉末的低温溶胶 - 凝胶法和使用由CuBO 2粉末制成的靶材的用于形成CuBO 2薄膜的脉冲激光沉积（PLD）工艺。 CuBO 2薄膜是光学透明的p型半导体氧化物薄膜。 具有CuBO 2薄膜的器件包括p型透明薄膜晶体管（TTFT），其包括作为沟道层的薄膜CuBO 2和具有CuBO 2 p层的薄膜太阳能电池。 还描述了包括“核 - 壳”和“纳米对”“颗粒的各种形式的CuBO 2的固态染料敏化太阳能电池（SS-DSSC）和制造方法。

    Silicon-containing layer deposition with silicon compounds
    6.
    发明授权
    Silicon-containing layer deposition with silicon compounds 有权
    含硅层沉积与硅化合物

    公开(公告)号：US07540920B2

    公开(公告)日：2009-06-02

    申请号：US10688797

    申请日：2003-10-17

    申请人： Kaushal K. Singh ,  Paul B. Comita ,  Lance A. Scudder ,  David K. Carlson

    发明人： Kaushal K. Singh ,  Paul B. Comita ,  Lance A. Scudder ,  David K. Carlson

    IPC分类号： C30B21/02

    CPC分类号： C07F7/0896 ,  C01B33/04 ,  C01B33/107 ,  C07F7/12 ,  C23C16/24 ,  C23C16/30

    摘要： Embodiments of the invention generally provide a composition of silicon compounds and methods for using the silicon compounds to deposit a silicon-containing film. The processes employ introducing the silicon compound to a substrate surface and depositing a portion of the silicon compound, the silicon motif, as the silicon-containing film. The ligands are another portion of the silicon compound and are liberated as an in-situ etchant. The in-situ etchants supports the growth of selective silicon epitaxy. Silicon compounds include SiRX6, Si2RX6, Si2RX8, wherein X is independently hydrogen or halogen and R is carbon, silicon or germanium. Silicon compound also include compounds comprising three silicon atoms, fourth atom of carbon, silicon or germanium and atoms of hydrogen or halogen with at least one halogen, as well as, comprising four silicon atoms, fifth atom of carbon, silicon or germanium and atoms of hydrogen or halogen with at least one halogen.

    摘要翻译： 本发明的实施方案通常提供硅化合物的组合物和使用硅化合物沉积含硅膜的方法。 该方法采用将硅化合物引入衬底表面，并将一部分硅化合物硅基体作为含硅膜沉积。 配体是硅化合物的另一部分，并且被释放为原位蚀刻剂。 原位蚀刻剂支持选择性硅外延的生长。 硅化合物包括SiRX6，Si2RX6，Si2RX8，其中X独立地是氢或卤素，R是碳，硅或锗。 硅化合物还包括包含三个硅原子，第四碳原子，硅或锗的氢原子或卤原子与至少一个卤素的化合物，以及包含四个硅原子，第五个碳原子，硅或锗的化合物和 氢或卤素与至少一个卤素。

    Low temperature epitaxial growth of silicon-containing films using close proximity UV radiation
    7.
    发明授权
    Low temperature epitaxial growth of silicon-containing films using close proximity UV radiation 有权
    使用接近紫外线辐射的含硅薄膜的低温外延生长

    公开(公告)号：US07262116B2

    公开(公告)日：2007-08-28

    申请号：US11401578

    申请日：2006-04-10

    申请人： Kaushal K. Singh ,  David Carlson ,  Manish Hemkar ,  Satheesh Kuppurao ,  Randhir Thakur

    发明人： Kaushal K. Singh ,  David Carlson ,  Manish Hemkar ,  Satheesh Kuppurao ,  Randhir Thakur

    IPC分类号： H01L21/20

    CPC分类号： H01L21/0262 ,  C23C16/482 ,  C30B25/105 ,  C30B29/06 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02639 ,  H01L21/02661

    摘要： A method of preparing a clean substrate surface for blanket or selective epitaxial deposition of silicon-containing and/or germanium-containing films. In addition, a method of growing the silicon-containing and/or germanium-containing films, where both the substrate cleaning method and the film growth method are carried out at a temperature below 750° C., and typically at a temperature from about 700° C. to about 500° C. The cleaning method and the film growth method employ the use of radiation having a wavelength ranging from about 310 nm to about 120 nm in the processing volume in which the silicon-containing film is grown. Use of this radiation in combination with particular partial pressure ranges for the reactive cleaning or film-forming component species enable the substrate cleaning and epitaxial film growth at temperatures below those previously known in the industry.

    摘要翻译： 一种制备用于覆盖或选择性外延沉积含硅和/或含锗膜的清洁衬底表面的方法。 此外，生长含硅和/或含锗膜的方法，其中基板清洗方法和膜生长方法都在低于750℃的温度下进行，通常在约700℃的温度下进行 ℃至约500℃。清洁方法和膜生长方法在其中生长含硅膜的处理体积中使用波长为约310nm至约120nm的辐射。 将该辐射与用于反应性清洁或成膜组分物质的特定分压范围的组合的使用使得能够在低于工业以前已知的温度下进行基材清洗和外延膜生长。