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公开(公告)号：US08846437B2
公开(公告)日：2014-09-30
申请号：US13250748
申请日：2011-09-30
申请人： Kaushal K. Singh , Robert Jan Visser , Srikant Rao , Bhaskar Kumar , Claire J. Carmalt , Ranga Rao Arnepalli , Omkaram Nalamasu , Gaurav Saraf , Sanjayan Sathasivam , Christopher Stuart Blackman
发明人： Kaushal K. Singh , Robert Jan Visser , Srikant Rao , Bhaskar Kumar , Claire J. Carmalt , Ranga Rao Arnepalli , Omkaram Nalamasu , Gaurav Saraf , Sanjayan Sathasivam , Christopher Stuart Blackman
IPC分类号： H01L21/00 , H01L21/02 , B82Y30/00 , H01L31/18 , H01L31/072 , H01L31/0352 , H01L51/42 , C23C16/56 , H01L31/075 , H01L31/0224 , C23C16/30 , H01L51/00
CPC分类号： H01L29/78681 , B82Y10/00 , B82Y30/00 , C23C16/301 , C23C16/56 , H01L21/0237 , H01L21/02491 , H01L21/02546 , H01L21/02576 , H01L21/02579 , H01L21/02601 , H01L21/0262 , H01L21/02628 , H01L21/02631 , H01L21/3245 , H01L27/1225 , H01L27/127 , H01L29/207 , H01L29/454 , H01L29/66742 , H01L29/78618 , H01L29/78696 , H01L31/022425 , H01L31/035227 , H01L31/072 , H01L31/075 , H01L31/184 , H01L31/1864 , H01L51/0048 , H01L51/424 , Y02E10/544 , Y02E10/548 , Y02E10/549 , Y02P70/521
摘要： Embodiments of the invention provide a method of forming a doped gallium arsenide based (GaAs) layer from a solution based precursor. The doped gallium arsenide based (GaAs) layer formed from the solution based precursor may assist solar cell devices to improve light absorption and conversion efficiency. In one embodiment, a method of forming a solar cell device includes forming a first layer with a first type of dopants doped therein over a surface of a substrate, forming a GaAs based layer on the first layer, and forming a second layer with a second type of dopants doped therein on the GaAs based layer.
摘要翻译： 本发明的实施例提供从基于溶液的前体形成掺杂的砷化镓（GaAs）层的方法。 由基于溶液的前体形成的掺杂砷化镓（GaAs）层可以帮助太阳能电池器件改善光吸收和转换效率。 在一个实施例中，形成太阳能电池器件的方法包括在衬底的表面上形成掺杂有第一类掺杂剂的第一层，在第一层上形成GaAs基层，并形成具有第二层的第二层 在GaAs基层上掺杂的掺杂剂的类型。
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2.发明申请公开(公告)号：US20120080092A1
公开(公告)日：2012-04-05
申请号：US13250748
申请日：2011-09-30
申请人： Kaushal K. Singh , Robert Jan Visser , Srikant Rao , Bhaskar Kumar , Claire J. Carmalt , Ranga Rao Arnepalli , Omkaram Nalamasu , Gaurav Saraf , Sanjayan Sathasivam , Christopher Stuart Blackman
发明人： Kaushal K. Singh , Robert Jan Visser , Srikant Rao , Bhaskar Kumar , Claire J. Carmalt , Ranga Rao Arnepalli , Omkaram Nalamasu , Gaurav Saraf , Sanjayan Sathasivam , Christopher Stuart Blackman
IPC分类号： H01L31/0264 , H01L31/18 , B82Y40/00
CPC分类号： H01L29/78681 , B82Y10/00 , B82Y30/00 , C23C16/301 , C23C16/56 , H01L21/0237 , H01L21/02491 , H01L21/02546 , H01L21/02576 , H01L21/02579 , H01L21/02601 , H01L21/0262 , H01L21/02628 , H01L21/02631 , H01L21/3245 , H01L27/1225 , H01L27/127 , H01L29/207 , H01L29/454 , H01L29/66742 , H01L29/78618 , H01L29/78696 , H01L31/022425 , H01L31/035227 , H01L31/072 , H01L31/075 , H01L31/184 , H01L31/1864 , H01L51/0048 , H01L51/424 , Y02E10/544 , Y02E10/548 , Y02E10/549 , Y02P70/521
摘要： Embodiments of the invention provide a method of forming a doped gallium arsenide based (GaAs) layer from a solution based precursor. The doped gallium arsenide based (GaAs) layer formed from the solution based precursor may assist solar cell devices to improve light absorption and conversion efficiency. In one embodiment, a method of forming a solar cell device includes forming a first layer with a first type of dopants doped therein over a surface of a substrate, forming a GaAs based layer on the first layer, and forming a second layer with a second type of dopants doped therein on the GaAs based layer.
摘要翻译： 本发明的实施例提供从基于溶液的前体形成掺杂的砷化镓（GaAs）层的方法。 由基于溶液的前体形成的掺杂砷化镓（GaAs）层可以帮助太阳能电池器件改善光吸收和转换效率。 在一个实施例中，形成太阳能电池器件的方法包括在衬底的表面上形成掺杂有第一类掺杂剂的第一层，在第一层上形成GaAs基层，并形成具有第二层的第二层 在GaAs基层上掺杂的掺杂剂的类型。
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3.发明申请Method of manufacturing thin crystalline silicon solar cells using recrystallization 审中-公开使用重结晶制造薄晶体硅太阳能电池的方法公开(公告)号：US20110315186A1
公开(公告)日：2011-12-29
申请号：US13106728
申请日：2011-05-12
IPC分类号： H01L31/0224 , H01L31/0216 , H01L31/18 , H01L31/0236 , H01L31/042 , H01L31/05
CPC分类号： H01L31/1804 , H01L31/022441 , H01L31/0682 , H01L31/1892 , Y02E10/547 , Y02P70/521
摘要： Embodiments of the invention provide a thin single crystalline silicon film solar cell and methods of forming the same. The method includes forming a thin single crystalline silicon layer on a silicon growth substrate, followed by forming front or rear solar cell structures on and/or in the thin single crystalline silicon film. The method also includes attaching the thin single crystalline silicon film to a mechanical carrier and then separating the growth substrate from the thin single crystalline silicon film along a cleavage plane formed between the growth substrate and the thin single crystalline silicon film. Front or rear solar cell structures are then formed on and/or in the thin single crystalline silicon film opposite the mechanical carrier to complete formation of the solar cell.
摘要翻译： 本发明的实施例提供一种薄单晶硅膜太阳能电池及其形成方法。 该方法包括在硅生长衬底上形成薄的单晶硅层，随后在薄的单晶硅膜上和/或上形成前或后太阳能电池结构。 该方法还包括将薄单晶硅膜附着到机械载体上，然后沿生长衬底和薄单晶硅膜之间形成的解理平面从薄单晶硅膜分离生长衬底。 然后在与机械载体相对的薄单晶硅膜上和/或上形成正面或背面的太阳能电池结构，以完成太阳能电池的形成。
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公开(公告)号：US20100313951A1
公开(公告)日：2010-12-16
申请号：US12797529
申请日：2010-06-09
申请人： Omkaram Nalamasu , Charles Gay , Victor L. Pushparaj , Kaushal K. Singh , Robert J. Visser , Majeed A. Foad , Ralf Hofmann
发明人： Omkaram Nalamasu , Charles Gay , Victor L. Pushparaj , Kaushal K. Singh , Robert J. Visser , Majeed A. Foad , Ralf Hofmann
CPC分类号： H01L31/022425 , B82Y10/00 , H01L31/0322 , H01L31/03529 , H01L31/0384 , H01L31/0749 , H01L51/0048 , H01L51/4213 , Y02E10/541 , Y02P70/521
摘要： Solar cells are provided with carbon nanotubes (CNTs) which are used: to define a micron/sub-micron geometry of the solar cells; and/or as charge transporters for efficiently removing charge carriers from the absorber layer to reduce the rate of electron-hole recombination in the absorber layer. A solar cell may comprise: a substrate; a multiplicity of areas of metal catalyst on the surface of the substrate; a multiplicity of carbon nanotube bundles formed on the multiplicity of areas of metal catalyst, each bundle including carbon nanotubes aligned roughly perpendicular to the surface of the substrate; and a photoactive solar cell layer formed over the carbon nanotube bundles and exposed surfaces of the substrate, wherein the photoactive solar cell layer is continuous over the carbon nanotube bundles and the exposed surfaces of the substrate. The photoactive solar cell layer may be comprised of amorphous silicon p/i/n thin films; although, concepts of the present invention are also applicable to solar cells with absorber layers of microcrystalline silicon, SiGe, carbon doped microcrystalline silicon, CIS, CIGS, CISSe and various p-type II-VI binary compounds and ternary and quaternary compounds.
摘要翻译： 太阳能电池提供有碳纳米管（CNT），其用于限定太阳能电池的微米/亚微米几何形状; 和/或作为电荷转运体，用于从吸收层有效去除电荷载体以降低吸收层中电子 - 空穴复合的速率。 太阳能电池可以包括：基底; 在基材表面上的金属催化剂的多个区域; 形成在金属催化剂的多个区域上的多个碳纳米管束，每个束包括大致垂直于基板的表面排列的碳纳米管; 以及形成在所述碳纳米管束和所述基板的露出表面上的光活性太阳能电池层，其中所述光电太阳能电池层在所述碳纳米管束和所述基板的暴露表面上连续。 光电太阳能电池层可以由非晶硅p / i / n薄膜组成; 尽管本发明的概念也适用于具有微晶硅，SiGe，碳掺杂微晶硅，CIS，CIGS，CISSe和各种p型II-VI二元化合物和三元和四元化合物的吸收层的太阳能电池。
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公开(公告)号：US20120218621A1
公开(公告)日：2012-08-30
申请号：US13501994
申请日：2010-10-22
IPC分类号： G02F1/153 , C23C16/453 , H05H1/24
CPC分类号： G02F1/1523 , C23C14/08 , C23C14/34 , G02F1/1525 , G02F2202/06 , Y10S359/90
摘要： The present invention generally relates to electrochromic (EC) devices, such as used in electrochromic windows (ECWs), and their manufacture. The EC devices may comprise a transparent substrate; a first transparent conductive layer; a doped coloration layer, wherein the coloration layer dopants provide structural stability to the arrangement of atoms in the coloration layer; an electrolyte layer; a doped anode layer over said electrolyte layer, wherein the anode layer dopant provides increased electrically conductivity in the doped anode layer; and a second transparent conductive layer. A method of fabricating an electrochromic device may comprise depositing on a substrate, in sequence, a first transparent conductive layer, a doped coloration layer, an electrolyte layer, a doped anode layer, and a second transparent conductive layer, wherein at least one of the doped coloration layer, the electrolyte layer and the doped anode layer is sputter deposited using a combinatorial plasma deposition process.
摘要翻译： 本发明一般涉及电致变色（EC）装置，例如用于电致变色窗（ECW））及其制造。 EC装置可以包括透明基板; 第一透明导电层; 掺杂着色层，其中着色层掺杂剂为着色层中的原子排列提供结构稳定性; 电解质层; 在所述电解质层上的掺杂阳极层，其中所述阳极层掺杂剂在所述掺杂阳极层中提供增加的导电性; 和第二透明导电层。 制造电致变色器件的方法可以包括依次沉积在第一透明导电层，掺杂着色层，电解质层，掺杂阳极层和第二透明导电层的衬底上，其中至少一个 掺杂着色层，电解质层和掺杂阳极层使用组合等离子体沉积工艺溅射沉积。
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公开(公告)号：US20100261049A1
公开(公告)日：2010-10-14
申请号：US12422739
申请日：2009-04-13
申请人： BYUNG-SUNG LEO KWAK , Nety M. Krishna , Omkaram Nalamasu , Kaushal K. Singh , Steven Verhaverbeke
发明人： BYUNG-SUNG LEO KWAK , Nety M. Krishna , Omkaram Nalamasu , Kaushal K. Singh , Steven Verhaverbeke
CPC分类号： H01M10/0436 , H01G9/0029 , H01G9/012 , H01G9/15 , H01M10/052 , H01M10/0585 , Y02E60/13 , Y10T29/49115
摘要： A readily manufacturable, high power, high energy, large area energy storage device is described. The energy storage device may use processes compatible with large area processing tools, such as large area coating systems and linear processing systems compatible with flexible thin film substrates. The energy storage devices may include batteries, super-capacitors and ultra-capacitors. An energy storage device may include a multiplicity of thin film cells formed on a single substrate, the multiplicity of cells being electrically connected in series, each one of the multiplicity of cells comprising: a current collector on the surface of the substrate; a first electrode on the current collector; a second electrode over the first electrode; and an electrolyte layer between the first electrode and the second electrode. Furthermore, an energy storage device may include a plurality of thin film cells formed on a single substrate, the plurality of cells being electrically connected in a network, the network including both parallel and serial electrical connections between individual cells of the plurality of cells.
摘要翻译： 描述了容易制造的大功率，高能量，大面积的储能装置。 能量存储装置可以使用与大面积加工工具兼容的工艺，例如与柔性薄膜基板兼容的大面积涂覆系统和线性处理系统。 储能装置可以包括电池，超级电容器和超电容器。 能量存储装置可以包括形成在单个基板上的多个薄膜单元，多个单元串联电连接，多个单元中的每一个包括：基板表面上的集电器; 集电器上的第一电极; 第一电极上的第二电极; 以及在第一电极和第二电极之间的电解质层。 此外，能量存储装置可以包括形成在单个基板上的多个薄膜单元，所述多个单元电连接在网络中，所述网络包括多个单元中各个单元之间的并联和串联电连接。
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公开(公告)号：US08747942B2
公开(公告)日：2014-06-10
申请号：US12797529
申请日：2010-06-09
申请人： Omkaram Nalamasu , Charles Gay , Victor L. Pushparaj , Kaushal K. Singh , Robert J. Visser , Majeed A. Foad , Ralf Hofmann
发明人： Omkaram Nalamasu , Charles Gay , Victor L. Pushparaj , Kaushal K. Singh , Robert J. Visser , Majeed A. Foad , Ralf Hofmann
IPC分类号： B05D5/12
CPC分类号： H01L31/022425 , B82Y10/00 , H01L31/0322 , H01L31/03529 , H01L31/0384 , H01L31/0749 , H01L51/0048 , H01L51/4213 , Y02E10/541 , Y02P70/521
摘要： Solar cells are provided with carbon nanotubes (CNTs) which are used: to define a micron/sub-micron geometry of the solar cells; and/or as charge transporters for efficiently removing charge carriers from the absorber layer to reduce the rate of electron-hole recombination in the absorber layer. A solar cell may comprise: a substrate; a multiplicity of areas of metal catalyst on the surface of the substrate; a multiplicity of carbon nanotube bundles formed on the multiplicity of areas of metal catalyst, each bundle including carbon nanotubes aligned roughly perpendicular to the surface of the substrate; and a photoactive solar cell layer formed over the carbon nanotube bundles and exposed surfaces of the substrate, wherein the photoactive solar cell layer is continuous over the carbon nanotube bundles and the exposed surfaces of the substrate. The photoactive solar cell layer may be comprised of amorphous silicon p/i/n thin films; although, concepts of the present invention are also applicable to solar cells with absorber layers of microcrystalline silicon, SiGe, carbon doped microcrystalline silicon, CIS, CIGS, CISSe and various p-type II-VI binary compounds and ternary and quaternary compounds.
摘要翻译： 太阳能电池提供有碳纳米管（CNT），其用于限定太阳能电池的微米/亚微米几何形状; 和/或作为电荷转运体，用于从吸收层有效去除电荷载体以降低吸收层中电子 - 空穴复合的速率。 太阳能电池可以包括：基底; 在基材表面上的金属催化剂的多个区域; 形成在金属催化剂的多个区域上的多个碳纳米管束，每个束包括大致垂直于基板的表面排列的碳纳米管; 以及形成在所述碳纳米管束和所述基板的露出表面上的光活性太阳能电池层，其中所述光电太阳能电池层在所述碳纳米管束和所述基板的暴露表面上连续。 光电太阳能电池层可以由非晶硅p / i / n薄膜组成; 尽管本发明的概念也适用于具有微晶硅，SiGe，碳掺杂微晶硅，CIS，CIGS，CISSe和各种p型II-VI二元化合物和三元和四元化合物的吸收层的太阳能电池。
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8.发明授权公开(公告)号：US08736947B2
公开(公告)日：2014-05-27
申请号：US13501994
申请日：2010-10-22
CPC分类号： G02F1/1523 , C23C14/08 , C23C14/34 , G02F1/1525 , G02F2202/06 , Y10S359/90
摘要： The present invention generally relates to electrochromic (EC) devices, such as used in electrochromic windows (ECWs), and their manufacture. The EC devices may comprise a transparent substrate; a first transparent conductive layer; a doped coloration layer, wherein the coloration layer dopants provide structural stability to the arrangement of atoms in the coloration layer; an electrolyte layer; a doped anode layer over said electrolyte layer, wherein the anode layer dopant provides increased electrically conductivity in the doped anode layer; and a second transparent conductive layer. A method of fabricating an electrochromic device may comprise depositing on a substrate, in sequence, a first transparent conductive layer, a doped coloration layer, an electrolyte layer, a doped anode layer, and a second transparent conductive layer, wherein at least one of the doped coloration layer, the electrolyte layer and the doped anode layer is sputter deposited using a combinatorial plasma deposition process.
摘要翻译： 本发明一般涉及电致变色（EC）装置，例如用于电致变色窗（ECW））及其制造。 EC装置可以包括透明基板; 第一透明导电层; 掺杂着色层，其中着色层掺杂剂为着色层中的原子排列提供结构稳定性; 电解质层; 在所述电解质层上的掺杂阳极层，其中所述阳极层掺杂剂在所述掺杂阳极层中提供增加的导电性; 以及第二透明导电层。 制造电致变色器件的方法可以包括依次沉积在第一透明导电层，掺杂着色层，电解质层，掺杂阳极层和第二透明导电层的衬底上，其中至少一个 掺杂着色层，电解质层和掺杂阳极层使用组合等离子体沉积工艺溅射沉积。
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公开(公告)号：US08415556B2
公开(公告)日：2013-04-09
申请号：US12643380
申请日：2009-12-21
IPC分类号： H01L31/00
CPC分类号： H01L51/4226 , C25B1/003 , H01G9/2031 , Y02E10/542 , Y02E10/549 , Y02P70/521
摘要： Methods for fabrication of copper delafossite materials include a low temperature sol-gel process for synthesizing CuBO2 powders, and a pulsed laser deposition (PLD) process for forming thin films of CuBO2, using targets made of the CuBO2 powders. The CuBO2 thin films are optically transparent p-type semiconductor oxide thin films. Devices with CuBO2 thin films include p-type transparent thin film transistors (TTFT) comprising thin film CuBO2 as a channel layer and thin film solar cells with CuBO2 p-layers. Solid state dye sensitized solar cells (SS-DSSC) comprising CuBO2 in various forms, including “core-shell” and “nano-couple” particles, and methods of manufacture, are also described.
摘要翻译： 铜铁矿石材料的制造方法包括用于合成CuBO 2粉末的低温溶胶 - 凝胶法和使用由CuBO 2粉末制成的靶材的用于形成CuBO 2薄膜的脉冲激光沉积（PLD）工艺。 CuBO 2薄膜是光学透明的p型半导体氧化物薄膜。 具有CuBO 2薄膜的器件包括p型透明薄膜晶体管（TTFT），其包括作为沟道层的薄膜CuBO 2和具有CuBO 2 p层的薄膜太阳能电池。 还描述了包括各种形式的CuBO 2（包括核 - 壳和纳米对偶粒子）的固态染料敏化太阳能电池（SS-DSSC）和制造方法。
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10.发明申请COPPER DELAFOSSITE TRANSPARENT P-TYPE SEMICONDUCTOR MATERIALS FOR DYE SENSITIZED SOLAR CELLS 审中-公开用于DENE敏感的太阳能电池的铜箔透明P型半导体材料公开(公告)号：US20100252108A1
公开(公告)日：2010-10-07
申请号：US12643419
申请日：2009-12-21
IPC分类号： H01L31/0256 , H01L31/18
CPC分类号： H01L51/4226 , C25B1/003 , H01G9/2031 , Y02E10/542 , Y02E10/549 , Y02P70/521
摘要： Methods for fabrication of copper delafossite materials include a low temperature sol-gel process for synthesizing CuBO2 powders, and a pulsed laser deposition (PLD) process for forming thin films of CuBO2, using targets made of the CuBO2 powders. The CuBO2 thin films are optically transparent p-type semiconductor oxide thin films. Devices with CuBO2 thin films include p-type transparent thin film transistors (TTFT) comprising thin film CuBO2, as a channel layer and thin film solar cells with CuBO2 p-layers. Solid state dye sensitized solar cells (SS-DSSC) comprising CuBO2 in various forms, including “core-shell” and “nano-couple” particles, and methods of manufacture, are also described.
摘要翻译： 铜铁矿石材料的制造方法包括用于合成CuBO 2粉末的低温溶胶 - 凝胶法和使用由CuBO 2粉末制成的靶材的用于形成CuBO 2薄膜的脉冲激光沉积（PLD）工艺。 CuBO 2薄膜是光学透明的p型半导体氧化物薄膜。 具有CuBO 2薄膜的器件包括作为沟道层的包括薄膜CuBO 2的p型透明薄膜晶体管（TTFT）和具有CuBO 2 p层的薄膜太阳能电池。 还描述了包括“核 - 壳”和“纳米对”“颗粒的各种形式的CuBO 2的固态染料敏化太阳能电池（SS-DSSC）和制造方法。
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