Light emitting semiconductor device
    1.
    发明授权
    Light emitting semiconductor device 有权
    发光半导体器件

    公开(公告)号:US09036678B2

    公开(公告)日:2015-05-19

    申请号:US12844698

    申请日:2010-07-27

    摘要: A fiber coupled semiconductor device and a method of manufacturing of such a device are disclosed. The method provides an improved stability of optical coupling during assembly of the device, whereby a higher optical power levels and higher overall efficiency of the fiber coupled device can be achieved. The improvement is achieved by attaching the optical fiber to a vertical mounting surface of a fiber mount. The platform holding the semiconductor chip and the optical fiber can be mounted onto a spacer mounted on a base. The spacer has an area smaller than the area of the platform, for mechanical decoupling of thermally induced deformation of the base from a deformation of the platform of the semiconductor device. Optionally, attaching the fiber mount to a submount of the semiconductor chip further improves thermal stability of the packaged device.

    摘要翻译: 公开了一种光纤耦合半导体器件及其制造方法。 该方法在组装装置期间提供了光耦合的改进的稳定性,由此可以实现光纤耦合器件的更高的光功率水平和更高的总体效率。 通过将光纤连接到光纤支架的垂直安装表面来实现改进。 保持半导体芯片和光纤的平台可以安装在安装在基座上的间隔件上。 间隔件的面积小于平台的面积,用于使基体的热引起的变形与半导体器件的平台的变形的机械解耦。 可选地,将光纤安装件附接到半导体芯片的基座上进一步提高了封装装置的热稳定性。

    Optical module with fiber feedthrough
    2.
    发明授权
    Optical module with fiber feedthrough 有权
    带光纤馈通光模块

    公开(公告)号:US08215850B2

    公开(公告)日:2012-07-10

    申请号:US12648580

    申请日:2009-12-29

    IPC分类号: G02B6/36 G02B6/42

    CPC分类号: G02B6/4248

    摘要: A molded ceramic or glass ferrule has at least one longitudinal passage, which enables an optical fiber feed through, sealed into a metal housing with glass solder. The metal material in the housing has a slightly higher coefficient of thermal expansion (CTE) than the ferrule material and the sealing glass so that hermetic seal is maintained by a compression stress applied to the ferrule and sealing glass by the housing at operating conditions. When the housing has to be fabricated from a low CTE material, e.g. metal or ceramic, a metal sleeve and stress relief bracket is used to apply the compression stress.

    摘要翻译: 模制的陶瓷或玻璃套圈具有至少一个纵向通道,其使得光纤馈送通过玻璃焊料密封到金属外壳中。 壳体中的金属材料比套圈材料和密封玻璃具有略高的热膨胀系数(CTE),使得在工作条件下,通过壳体施加到套圈和密封玻璃的压缩应力来保持气密密封。 当壳体必须由低CTE材料制成时,例如, 金属或陶瓷,金属套筒和应力消除支架用于施加压缩应力。

    Thin film transistors
    8.
    发明授权
    Thin film transistors 有权
    薄膜晶体管

    公开(公告)号:US06232157B1

    公开(公告)日:2001-05-15

    申请号:US09450522

    申请日:1999-11-29

    IPC分类号: H01L2100

    摘要: The specification describes thin film transistor integrated circuits wherein the TFT devices are field effect transistors with inverted structures. The interconnect levels are produced prior to the formation of the transistors. This structure leads to added flexibility in processing. The inverted structure is a result of removing the constraints in traditional semiconductor field effect device manufacture that are imposed by the necessity of starting the device fabrication with the single crystal semiconductor active material. In the inverted structure the active material, preferably an organic semiconductor, is formed last in the fabrication sequence. In a preferred embodiment the inverted TFT devices are formed on a flexible printed circuit substrate.

    摘要翻译: 该说明书描述了薄膜晶体管集成电路,其中TFT器件是具有倒置结构的场效应晶体管。 在形成晶体管之前产生互连电平。 这种结构导致加工的灵活性增加。 反转结构是消除传统的半导体场效应器件制造中由于采用单晶半导体活性材料开始器件制造的必要性而产生的限制的结果。 在倒置结构中,最终在制造顺序中形成活性材料,优选有机半导体。 在优选实施例中,反向TFT器件形成在柔性印刷电路衬底上。

    Method of making an organic thin film transistor
    9.
    发明授权
    Method of making an organic thin film transistor 失效
    制造有机薄膜晶体管的方法

    公开(公告)号:US06107117A

    公开(公告)日:2000-08-22

    申请号:US770535

    申请日:1996-12-20

    摘要: A process for fabricating thin film transistors in which the active layer is an organic semiconducting material with a carrier mobility greater than 10.sup.-3 cm.sup.2 /Vs and a conductivity less than about 10.sup.-6 S/cm at 20.degree. C. is disclosed. The organic semiconducting material is a regioregular (3-alkylthiophene) polymer. The organic semiconducting films are formed by applying a solution of the regioregular polymer and a solvent over the substrate. The poly (3-alkylthiophene) films have a preferred orientation in which the thiophene chains has a planar stacking so the polymer backbone is generally parallel to the substrate surface.

    摘要翻译: 公开了一种用于制造薄膜晶体管的工艺,其中有源层是在20℃下载流子迁移率大于10 -3 cm 2 / Vs和小于约10 -6 S / cm 2的电导率的有机半导体材料。 有机半导体材料是区域性(3-烷基噻吩)聚合物。 有机半导体薄膜是通过将区域状聚合物和溶剂的溶液涂覆在基材上形成的。 聚(3-烷基噻吩)膜具有其中噻吩链具有平面堆叠的优选取向,因此聚合物主链通常平行于基底表面。