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45 条记录 (耗时 0.03 秒)

    Wavelength-tunable semiconductor laser
    9.
    发明授权
    Wavelength-tunable semiconductor laser 失效
    波长可调半导体激光器

    公开(公告)号：US4873691A

    公开(公告)日：1989-10-10

    申请号：US224726

    申请日：1988-07-27

    申请人： Kazuhisa Uomi ,  Shinji Tsuji ,  Shinji Sakano ,  Makoto Okai ,  Naoki Chinone

    发明人： Kazuhisa Uomi ,  Shinji Tsuji ,  Shinji Sakano ,  Makoto Okai ,  Naoki Chinone

    IPC分类号： H01S5/00 ,  H01S3/1055 ,  H01S5/042 ,  H01S5/0625 ,  H01S5/125 ,  H01S5/34

    CPC分类号： B82Y20/00 ,  H01S3/1055 ,  H01S5/06256 ,  H01S5/125 ,  H01S5/34

    摘要： A wavelength-tunable semiconductor laser having an active part and an external waveguide part is disclosed. The external waveguide part has a diffraction grating, such as a distributed Bragg reflector, and a quantum well structure optically coupled to the diffraction grating, together with electrodes for impressing an electric field to the quantum well structure. By applying the electric filed to the quantum well structure, the refractive index in the optically coupled diffraction grating/quantum well structure, and light oscillation wavelength in the external waveguide part, can be varied.

    摘要翻译： 公开了一种具有有源部分和外部波导部分的波长可调谐半导体激光器。 外部波导部分具有衍射光栅，例如分布式布拉格反射器，以及光学耦合到衍射光栅的量子阱结构，以及用于向量子阱结构施加电场的电极。 通过将电场施加到量子阱结构，可以改变光耦合衍射光栅/量子阱结构中的折射率和外部波导部分中的光振荡波长。

    Semiconductor laser having a multiple quantum well structure doped with impurities
    10.
    发明授权
    Semiconductor laser having a multiple quantum well structure doped with impurities 失效
    具有掺杂有杂质的多量子阱结构的半导体激光器

    公开(公告)号：US4881235A

    公开(公告)日：1989-11-14

    申请号：US41410

    申请日：1987-04-23

    申请人： Naoki Chinone ,  Kazuhisa Uomi ,  Tadashi Fukuzawa ,  Hideaki Matsueda ,  Takashi Kajimura ,  Tsukuru Ohtoshi

    发明人： Naoki Chinone ,  Kazuhisa Uomi ,  Tadashi Fukuzawa ,  Hideaki Matsueda ,  Takashi Kajimura ,  Tsukuru Ohtoshi

    IPC分类号： H01S5/227 ,  H01S5/34

    CPC分类号： B82Y20/00 ,  H01S5/227 ,  H01S5/34 ,  H01S5/2275 ,  H01S5/309 ,  H01S5/3407 ,  Y10S372/704

    摘要： In a well-known semiconductor laser, a multiple quantum well type active layer consisting of barrier layers and active layers or well layers, each of which has a thickness less than the de Broglie wavelength of electrons, is doped with an impurity, and the impurity density is made higher in the barrier layer than in the well layer. Further, in a case where the multiple quantum well active layer is held between p-type and n-type cladding layers, the well layer is undoped, the part of the barrier layer lying in contact with the well layer is undoped, and the other part of the barrier layer close to the p-type cladding layer is put into the n-conductivity type while that of the barrier layer close to the n-type cladding layer is put into the n-conductivity type. Desirably, the impurity density should range from about 1.times.10.sup.18 to about 1.times.10.sup.19 cm.sup.- 3.

    摘要翻译： 在众所周知的半导体激光器中，掺杂有杂质的由势垒层和活性层或阱层构成的多量子阱型有源层的厚度小于电子的德布罗意波长， 在阻挡层中的密度比井层中的密度高。 此外，在多量子阱活性层保持在p型和n型覆层之间的情况下，阱层未掺杂，阻挡层与阱层接触的部分未掺杂，另一方面 靠近p型包层的阻挡层的一部分被放入n导电型，而靠近n型包覆层的势垒层的部分被放入n导电型。 理想地，杂质密度应在约1×1018至约1×1019cm-3的范围内。