Apparatus for populating transport tapes
    5.
    发明授权
    Apparatus for populating transport tapes 失效
    装载运输带的装置

    公开(公告)号:US06895731B2

    公开(公告)日:2005-05-24

    申请号:US10739488

    申请日:2003-12-18

    摘要: An apparatus and a method for populating transport tapes with electronic components includes a mold support having at least one recess over which a flat plastic strip is disposed. A heater heats the mold support and/or the plastic strip in an area of the recesses. An embossing tool, which has the electronic component in its embossing area, together with the electronic component, is embossed into the plastic strip in the direction of the recess into the mold support to form a tape pocket.

    摘要翻译: 用于用电子部件填充输送带的装置和方法包括具有至少一个凹部的模具支撑件,扁平塑料条设置在该凹部上。 加热器在凹部的区域中加热模具支撑件和/或塑料条。 将压电工具(其在其压花区域中的电子部件)与电子部件一起在凹进方向上压印到塑料条中以形成带状袋。

    Apparatus and method for populating transport tapes
    6.
    发明授权
    Apparatus and method for populating transport tapes 有权
    用于填充输送带的装置和方法

    公开(公告)号:US06694707B2

    公开(公告)日:2004-02-24

    申请号:US10358953

    申请日:2003-02-04

    IPC分类号: B65B4702

    摘要: An apparatus and a method for populating transport tapes with electronic components includes a mold support having at least one recess over which a flat plastic strip is disposed. A heater heats the mold support and/or the plastic strip in an area of the recesses. An embossing tool, which has the electronic component in its embossing area, together with the electronic component, is embossed into the plastic strip in the direction of the recess into the mold support to form a tape pocket.

    摘要翻译: 用于用电子部件填充输送带的装置和方法包括具有至少一个凹部的模具支撑件,扁平塑料条设置在该凹部上。 加热器在凹部的区域中加热模具支撑件和/或塑料条。 将压电工具(其在其压花区域中的电子部件)与电子部件一起在凹进方向上压印到塑料条中以形成带状袋。

    Unpolished semiconductor wafer and method for producing an unpolished semiconductor wafer
    8.
    发明授权
    Unpolished semiconductor wafer and method for producing an unpolished semiconductor wafer 有权
    未抛光半导体晶片及其制造未抛光半导体晶片的方法

    公开(公告)号:US07754009B2

    公开(公告)日:2010-07-13

    申请号:US11528861

    申请日:2006-09-28

    IPC分类号: H01L21/302

    CPC分类号: C30B29/06 C30B33/00

    摘要: Unpolished semiconductor wafers are produced by: (a) pulling a single crystal of a semiconductor material, (b) grinding the single crystal round, (c) separating a semiconductor wafer from this crystal, (d) rounding the edge of the semiconductor wafer, (e) surface-grinding at least one side of the semiconductor wafer, (f) treating the semiconductor wafer with an etchant, and (g) cleaning the semiconductor wafer. The unpolished semiconductor wafers have, on at least the front side, a reflectivity of 95% or more, a surface roughness of 3 nm or less, have a thickness of 80-2500 μm, an overall planarity value GBIR of 5 μm or less with an edge exclusion of 3 mm and a photolithographic resolution of at least 0.8 μm, and which furthermore contain a native oxide layer with a thickness of 0.5-3 nm on both sides.

    摘要翻译: 未抛光的半导体晶片通过以下方法制造:(a)拉制半导体材料的单晶,(b)研磨单晶圆,(c)从该晶体分离半导体晶片,(d)使半导体晶片的边缘倒圆, (e)对所述半导体晶片的至少一侧进行表面研磨,(f)用蚀刻剂处理所述半导体晶片,以及(g)清洁所述半导体晶片。 未抛光的半导体晶片至少在前侧具有95%以上的反射率,3nm以下的表面粗糙度,其厚度为80〜2500μm,总平面度GBIR为5μm以下, 边缘排除为3mm,光刻分辨率为至少0.8μm,并且还包含两侧厚度为0.5-3nm的天然氧化物层。