摘要:
A semiconductor component has a housing with a first main area and a second main area opposite to the first main area, which surrounds at least one semiconductor chip. The semiconductor chip has a first metallization layer on a first main side. A second main side of the semiconductor chip borders the second main area of the semiconductor component. The first metallization layer of the semiconductor chip is connected via electrical conductors to contacts that are likewise surrounded by the housing and border the second main area. The semiconductor chip furthermore has, on the second main side, a second metallization layer for carrying signals.
摘要:
A radio-frequency power component and a radio-frequency power module, as well as to methods for producing them are encompassed. The radio-frequency power component has a semiconductor chip that is suitable for flip chip mounting. The semiconductor chip has an active upper face that produces power losses. This active upper face is covered by an electrically isolating layer leaving free contact surfaces, with a heat-dissipating metal layer being applied to its upper face. The metal layer directly dissipates the heat losses from the active semiconductor structures.
摘要:
The invention relates to a radiofrequency power semiconductor module having a cavity housing constructed from three modules, a 1st module, which has an upwardly and downwardly open housing frame with horizontally arranged flat conductors, a 2nd module, which has the chip island as a heat sink with at least one radiofrequency semiconductor component, the 2nd module forming the bottom of the cavity housing, and a 3rd module, which has the housing cover.
摘要:
The invention relates to a radiofrequency power semiconductor module having a cavity housing constructed from three modules, a 1st module, which has an upwardly and downwardly open housing frame with horizontally arranged flat conductors, a 2nd module, which has the chip island as a heat sink with at least one radiofrequency semiconductor components, the 2nd module forming the bottom of the cavity housing, and a 3rd module, which has the housing cover.
摘要:
An apparatus and a method for populating transport tapes with electronic components includes a mold support having at least one recess over which a flat plastic strip is disposed. A heater heats the mold support and/or the plastic strip in an area of the recesses. An embossing tool, which has the electronic component in its embossing area, together with the electronic component, is embossed into the plastic strip in the direction of the recess into the mold support to form a tape pocket.
摘要:
An apparatus and a method for populating transport tapes with electronic components includes a mold support having at least one recess over which a flat plastic strip is disposed. A heater heats the mold support and/or the plastic strip in an area of the recesses. An embossing tool, which has the electronic component in its embossing area, together with the electronic component, is embossed into the plastic strip in the direction of the recess into the mold support to form a tape pocket.
摘要:
An apparatus for singulating and bonding semiconductor chips includes a singulating station and a mounting station. In the singulating station, a semiconductor chip is provided with a bonding wire by a bonding tool and lifted off a carrier film. Then, in the mounting station, the semiconductor chip is placed on a chip mounting surface and fixed in place. The bonding wire is guided to a contact-connection surface of the circuit carrier and bonded to this surface.
摘要:
Unpolished semiconductor wafers are produced by: (a) pulling a single crystal of a semiconductor material, (b) grinding the single crystal round, (c) separating a semiconductor wafer from this crystal, (d) rounding the edge of the semiconductor wafer, (e) surface-grinding at least one side of the semiconductor wafer, (f) treating the semiconductor wafer with an etchant, and (g) cleaning the semiconductor wafer. The unpolished semiconductor wafers have, on at least the front side, a reflectivity of 95% or more, a surface roughness of 3 nm or less, have a thickness of 80-2500 μm, an overall planarity value GBIR of 5 μm or less with an edge exclusion of 3 mm and a photolithographic resolution of at least 0.8 μm, and which furthermore contain a native oxide layer with a thickness of 0.5-3 nm on both sides.
摘要:
A configuration and method for contacting a circuit is described. A carrier is disposed adjacent a circuit, and a setting element at which an electrical connection formed of a conductive material is disposed, so that the electrical connection connects the circuit to the carrier in a bonding process. In this manner an efficient and cost effective method for connecting the circuit to carrier is performed.
摘要:
An electronic component and a method for populating a circuit carrier during the production of the electronic component includes providing the semiconductor chip with at least one buffer body on its active top side, which buffer body, during the populating method, protects the semiconductor component structures—disposed under the buffer body—of the active top side of the semiconductor chip against mechanical damage and has a protective layer of a mechanically damping material.