公开(公告)号：US20050202661A1

公开(公告)日：2005-09-15

申请号：US10935000

申请日：2004-09-07

申请人： Alex Ceruzzi ,  Milan Pophristic ,  Bryan Shelton ,  Linlin Liu ,  Michael Murphy ,  Ting Zhu

发明人： Alex Ceruzzi ,  Milan Pophristic ,  Bryan Shelton ,  Linlin Liu ,  Michael Murphy ,  Ting Zhu

IPC分类号： H01L21/44

CPC分类号： H01L29/32 ,  H01L29/0615 ,  H01L29/0619 ,  H01L29/0634 ,  H01L29/2003 ,  H01L29/207 ,  H01L29/452 ,  H01L29/475 ,  H01L29/66143 ,  H01L29/66212 ,  H01L29/872

摘要： A guard ring is formed in a semiconductor region that is part of a Schottky junction or Schottky diode. The guard ring is formed by ion implantation into the semiconductor contact layer without completely annealing the semiconductor contact layer to form a high resistance region. The guard ring may be located at the edge of the layer or, alternatively, at a distance away from the edge of the layer. A Schottky metal contact is formed atop the layer, and the edges of the Schottky contact are disposed atop the guard ring.

摘要翻译： 在作为肖特基结或肖特基二极管的一部分的半导体区域中形成保护环。 保护环通过离子注入形成于半导体接触层中，而不会使半导体接触层完全退火以形成高电阻区域。 保护环可以位于层的边缘处，或者可选地，离开层的边缘一定距离。 肖特基金属接触形成在层的顶部，肖特基接触的边缘设置在保护环的顶部。

公开(公告)号：US20050179107A1

公开(公告)日：2005-08-18

申请号：US10780526

申请日：2004-02-17

申请人： Milan Pophristic ,  Michael Murphy ,  Richard Stall ,  Bryan Shelton ,  Linlin Liu ,  Alex Ceruzzi

发明人： Milan Pophristic ,  Michael Murphy ,  Richard Stall ,  Bryan Shelton ,  Linlin Liu ,  Alex Ceruzzi

IPC分类号： H01L21/28 ,  H01L29/15 ,  H01L29/20 ,  H01L29/45 ,  H01L29/47 ,  H01L29/778 ,  H01L29/872 ,  H01L27/095

CPC分类号： H01L29/452 ,  H01L29/157 ,  H01L29/2003 ,  H01L29/475 ,  H01L29/7787 ,  H01L29/872

摘要： A repeatable and uniform low doped layer is formed using modulation doping by forming alternating sub-layers of doped and undoped nitride semiconductor material atop another layer. A Schottky diode is formed of such a low doped nitride semiconductor layer disposed atop a much more highly doped nitride semiconductor layer. The resulting device has both a low on-resistance when the device is forward biased and a high breakdown voltage when the device is reverse biased.

摘要翻译： 通过在另一层上形成掺杂和未掺杂的氮化物半导体材料的交替子层，通过调制掺杂形成可重复且均匀的低掺杂层。 肖特基二极管由设置在更高掺杂的氮化物半导体层顶上的这种低掺杂氮化物半导体层形成。 当器件正向偏置时，所得器件具有低导通电阻，器件反向偏置时具有高击穿电压。

公开(公告)号：US20050179104A1

公开(公告)日：2005-08-18

申请号：US10780363

申请日：2004-02-17

申请人： Bryan Shelton ,  Linlin Liu ,  Alex Ceruzzi ,  Michael Murphy ,  Milan Pophristic ,  Boris Peres ,  Richard Stall ,  Xiang Gao ,  Ivan Eliashevich

发明人： Bryan Shelton ,  Linlin Liu ,  Alex Ceruzzi ,  Michael Murphy ,  Milan Pophristic ,  Boris Peres ,  Richard Stall ,  Xiang Gao ,  Ivan Eliashevich

IPC分类号： H01L21/60 ,  H01L29/06 ,  H01L29/20 ,  H01L29/47 ,  H01L29/872 ,  H01L21/00 ,  H01L31/0328

CPC分类号： H01L24/81 ,  H01L29/0692 ,  H01L29/2003 ,  H01L29/872 ,  H01L2224/81801 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01049 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01087 ,  H01L2924/014 ,  H01L2924/12032 ,  H01L2924/00

摘要： A lateral conduction Schottky diode includes multiple mesa regions upon which Schottky contacts are formed and which are at least separated by ohmic contacts to reduce the current path length and reduce current crowding in the Schottky contact, thereby reducing the forward resistance of a device. The multiple mesas may be isolated from one another and have sizes and shapes optimized for reducing the forward resistance. Alternatively, some of the mesas may be finger-shaped and intersect with a central mesa or a bridge mesa, and some or all of the ohmic contacts are interdigitated with the finger-shaped mesas. The dimensions of the finger-shaped mesas and the perimeter of the intersecting structure may be optimized to reduce the forward resistance. The Schottky diodes may be mounted to a submount in a flip chip arrangement that further reduces the forward voltage as well as improves power dissertation and reduces heat generation.

摘要翻译： 横向导通肖特基二极管包括形成肖特基接触的多个台面区域，其至少由欧姆接触分开，以减小电流路径长度并减少肖特基接触中的电流拥挤，从而降低器件的正向电阻。 多个台面可以彼此隔离并且具有优化的尺寸和形状以减少前向阻力。 或者，一些台面可以是手指形状并与中央台面或桥台面相交，并且部分或全部欧姆接触件与指状台面相互交错。 指状台面的尺寸和相交结构的周长可以被优化以减小正向阻力。 肖特基二极管可以以倒装芯片布置的方式安装到基座上，这进一步降低了正向电压，并且改善了功率论文并减少了发热。

公开(公告)号：US20060154455A1

公开(公告)日：2006-07-13

申请号：US11371738

申请日：2006-03-09

申请人： Shiping Guo ,  David Gotthold ,  Milan Pophristic ,  Boris Peres ,  Ivan Eliashevich ,  Bryan Shelton ,  Alex Ceruzzi ,  Michael Murphy ,  Richard Stall

发明人： Shiping Guo ,  David Gotthold ,  Milan Pophristic ,  Boris Peres ,  Ivan Eliashevich ,  Bryan Shelton ,  Alex Ceruzzi ,  Michael Murphy ,  Richard Stall

IPC分类号： H01L21/20 ,  H01L21/36 ,  H01L31/20

CPC分类号： H01L29/155 ,  C30B29/68 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02491 ,  H01L21/02507 ,  H01L21/0254 ,  H01L29/2003 ,  H01L33/007

摘要： A nitride semiconductor is grown on a silicon substrate by depositing a few mono-layers of aluminum to protect the silicon substrate from ammonia used during the growth process, and then forming a nucleation layer from aluminum nitride and a buffer structure including multiple superlattices of AlRGa(1-R)N semiconductors having different compositions and an intermediate layer of GaN or other Ga-rich nitride semiconductor. The resulting structure has superior crystal quality. The silicon substrate used in epitaxial growth is removed before completion of the device so as to provide superior electrical properties in devices such as high-electron mobility transistors.

摘要翻译： 在硅衬底上生长氮化物半导体，通过沉积几个单层铝，以保护硅衬底免受生长过程中使用的氨的影响，然后从氮化铝形成成核层，并形成包含多个超晶格Al 具有不同组成的半导体和GaN或其它富镓氮化物半导体的中间层的半导体。 所得结构具有优异的晶体质量。 在器件完成之前除去用于外延生长的硅衬底，以便在诸如高电子迁移率晶体管的器件中提供优异的电性能。

公开(公告)号：US20060145283A1

公开(公告)日：2006-07-06

申请号：US11030554

申请日：2005-01-06

申请人： TingGang Zhu ,  Bryan Shelton ,  Marek Pabisz ,  Mark Gottfried ,  Linlin Liu ,  Milan Pophristic ,  Michael Murphy ,  Richard Stall

发明人： TingGang Zhu ,  Bryan Shelton ,  Marek Pabisz ,  Mark Gottfried ,  Linlin Liu ,  Milan Pophristic ,  Michael Murphy ,  Richard Stall

IPC分类号： H01L27/095 ,  H01L21/338

CPC分类号： H01L29/872 ,  H01L29/2003 ,  H01L29/475

摘要： A gallium nitride based semiconductor Schottky diode fabricated from a n+ doped GaN layer having a thickness between one and six microns disposed on a sapphire substrate; an n− doped GaN layer having a thickness greater than one micron disposed on said n+ GaN layer patterned into a plurality of elongated fingers and a metal layer disposed on the n− doped GaN layer and forming a Schottky junction therewith. The layer thicknesses and the length and width of the elongated fingers are optimized to achieve a device with breakdown voltage of greater than 500 volts, current capacity in excess of one ampere, and a forward voltage of less than three volts.

摘要翻译： 由氮化镓基半导体肖特基二极管制成的n +掺杂GaN层，其厚度介于1微米与6微米之间，设置在蓝宝石衬底上; 设置在图案化成多个细长指状物的所述n + GaN层上的厚度大于1微米的n掺杂GaN层和设置在n掺杂GaN层上并与其形成肖特基结的金属层。 优化了层厚度和细长指状物的长度和宽度，以实现具有大于500伏特的击穿电压，超过1安培的电流容量和小于3伏特的正向电压的器件。

公开(公告)号：US20060151868A1

公开(公告)日：2006-07-13

申请号：US11032666

申请日：2005-01-10

申请人： TingGang Zhu ,  Bryan Shelton ,  Marek Pabisz ,  Mark Gottfried ,  Linlin Liu ,  Boris Peres ,  Alex Ceruzzi

发明人： TingGang Zhu ,  Bryan Shelton ,  Marek Pabisz ,  Mark Gottfried ,  Linlin Liu ,  Boris Peres ,  Alex Ceruzzi

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L23/3107 ,  H01L23/49562 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L2224/32245 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/48472 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/10272 ,  H01L2924/12032 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/19043 ,  H01L2924/20755 ,  H01L2924/2076 ,  H01L2924/3011 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/43 ,  H01L2924/01006

摘要： A packaged semiconductor device, in particular a gallium nitride semiconductor structure including a lower semiconductor layer and an upper semiconductor layer disposed over a portion of the lower semiconductor layer. The semiconductor structure includes a plurality of mesas projecting upwardly from the lower layer, each of the mesas including a portion of the upper layer and defining an upper contact surface separated form adjacent mesas by a portion of the lower layer surface. The device further includes a die mounting support, wherein the bottom surface of the die is attached to the top surface of the die mounting support; and a plurality of spaced external conductors extending from the support, at least once of said spaced external conductors having a bond wire post at one end thereof; with a bonding wire extending between the bond wire post and a contact region to the top surface of the plurality of mesas.

摘要翻译： 封装的半导体器件，特别是包括下半导体层和设置在下半导体层的一部分上的上半导体层的氮化镓半导体结构。 半导体结构包括从下层向上突出的多个台面，每个台面包括上层的一部分，并且限定由下层表面的一部分与相邻台面分开的上接触表面。 该装置还包括模具安装支撑件，其中模具的底表面附接到模具安装支撑件的顶表面; 以及从所述支撑件延伸的多个间隔开的外部导体，所述间隔开的外部导体中的至少一个在其一端具有接合线柱; 其中接合线在接合线柱和与多个台面的顶表面之间的接触区域之间延伸。

公开(公告)号：US20070096120A1

公开(公告)日：2007-05-03

申请号：US11260784

申请日：2005-10-27

申请人： Ivan Eliashevich ,  Hari Venugopalan ,  Emil Stefanov ,  Xian-An Cao ,  Bryan Shelton

发明人： Ivan Eliashevich ,  Hari Venugopalan ,  Emil Stefanov ,  Xian-An Cao ,  Bryan Shelton

IPC分类号： H01L31/12

CPC分类号： H01L33/20

摘要： An LED device (90) includes: an epitaxial structure (100) having a plurality of layers of semiconductor material and forming an active light-generating region (120) which generates light in response to electrical power being supplied to the LED device (90); and, a substrate (200) that is substantially transparent in a wavelength range corresponding to the light generated by the active light-generating region (120). The substrate has first and second opposing end faces (202, 206) and a plurality of side walls (210) extending therebetween, including a first side wall having a first portion thereof that defines a first surface (212, 214, 216, 218) which is not substantially normal to the first face (202) of the substrate (200). The epitaxial structure (100) is disposed on the first face (202) of the substrate (200).

摘要翻译： LED器件（90）包括：具有多层半导体材料的外延结构（100），并形成响应供给LED器件（90）的电力产生光的有源发光区域（120） ; 以及在与由所述有源发光区域（120）产生的光对应的波长范围内基本透明的基板（200）。 衬底具有第一和第二相对的端面（202,206）和在其之间延伸的多个侧壁（210），包括第一侧壁，其具有限定第一表面（212,214,216,218）的第一部分， 其基本上不垂直于衬底（200）的第一面（202）。 外延结构（100）设置在基板（200）的第一面（202）上。

公开(公告)号：US20070004088A1

公开(公告)日：2007-01-04

申请号：US11482363

申请日：2006-07-07

申请人： Michael Sackrison ,  Xiang Gao ,  Bryan Shelton ,  Ivan Eliashevich

发明人： Michael Sackrison ,  Xiang Gao ,  Bryan Shelton ,  Ivan Eliashevich

IPC分类号： H01L21/00

CPC分类号： H01L33/0095 ,  H01L21/78 ,  H01L2924/0002 ,  H01L2924/00

摘要： In a light emitting package fabrication process, a plurality of light emitting chips (10) are attached on a sub-mount wafer (14). The attached light emitting chips (10) are encapsulated. Fracture-initiating trenches (30, 32) are laser cut into the sub-mount wafer (14) between the attached light emitting chips (10) using a laser. The sub-mount wafer (14) is fractured along the fracture initiating trenches (30, 32).

摘要翻译： 在发光封装制造工艺中，多个发光芯片（10）安装在子安装晶片（14）上。 附着的发光芯片（10）被封装。 使用激光将断裂引发沟槽（30,32）激光切割到附接的发光芯片（10）之间的子安装晶片（14）中。 子安装晶片（14）沿断裂引发沟槽（30,32）断裂。

公开(公告)号：US20060030125A1

公开(公告)日：2006-02-09

申请号：US10911052

申请日：2004-08-04

申请人： Michael Sackrison ,  Xiang Gao ,  Bryan Shelton ,  Ivan Eliashevich

发明人： Michael Sackrison ,  Xiang Gao ,  Bryan Shelton ,  Ivan Eliashevich

IPC分类号： H01L21/78

CPC分类号： H01L33/0095 ,  H01L21/78 ,  H01L2924/0002 ,  H01L2924/00

摘要： In a light emitting package fabrication process, a plurality of light emitting chips (10) are attached on a sub-mount wafer (14). The attached light emitting chips (10) are encapsulated. Fracture-initiating trenches (30, 32) are laser cut into the sub-mount wafer (14) between the attached light emitting chips (10) using a laser. The sub-mount wafer (14) is fractured along the fracture initiating trenches (30, 32).

公开(公告)号：US06958498B2

公开(公告)日：2005-10-25

申请号：US10256402

申请日：2002-09-27

申请人： Bryan Shelton ,  Ivan Eliashevich ,  Hari Venugopalan

发明人： Bryan Shelton ,  Ivan Eliashevich ,  Hari Venugopalan

IPC分类号： H01L33/20 ,  H01L33/38 ,  H01L29/22

CPC分类号： H01L33/38 ,  H01L33/20 ,  H01L2924/0002 ,  H01L2924/00

摘要： Light emitting diodes are provided with electrode and pad structures that facilitate current spreading and heat sinking. A light emitting diode may be formed as a die with a stacked structure having a first region and a mesa projecting from a surface of the first region. A first electrode may substantially cover the mesa and have a plurality of pads disposed thereon maximizing a contact area in relation to the first electrode. A second electrode may be disposed as a trace on the surface of the first region, the trace having a spiral, segmented/interdigitated, loop or pattern. Optionally, the trace includes corner spikes projecting outwardly toward edges of the first electrode.

摘要翻译： 发光二极管设有电极和焊盘结构，便于电流扩散和散热。 发光二极管可以形成为具有从第一区域的表面突出的第一区域和台面的层叠结构的管芯。 第一电极可以基本上覆盖台面并且具有设置在其上的多个焊盘使相对于第一电极的接触面积最大化。 第二电极可以作为迹线设置在第一区域的表面上，迹线具有螺旋，分段/叉指，环形或图案。 可选地，迹线包括朝向第一电极的边缘向外突出的角尖。