公开(公告)号：US20130140698A1

公开(公告)日：2013-06-06

申请号：US13689871

申请日：2012-11-30

申请人： Annamalai Lakshmanan ,  Paul F. Ma ,  Mei Chang ,  Jennifer Shan

发明人： Annamalai Lakshmanan ,  Paul F. Ma ,  Mei Chang ,  Jennifer Shan

IPC分类号： H01L21/768 ,  H01L23/538

摘要： Described are doped TaN films, as well as methods for providing the doped TaN films. Doping TaN films with Ru, Cu, Co, Mn, Al, Mg, Cr, Nb, Ti and/or V allows for enhanced copper barrier properties of the TaN films. Also described are methods of providing films with a first layer comprising doped TaN and a second layer comprising one or more of Ru and Co, with optional doping of the second layer.

摘要翻译： 描述的是掺杂的TaN膜，以及用于提供掺杂的TaN膜的方法。 具有Ru，Cu，Co，Mn，Al，Mg，Cr，Nb，Ti和/或V的掺杂TaN膜允许增强TaN膜的铜阻挡性能。 还描述了提供具有包含掺杂TaN的第一层和包含Ru和Co中的一种或多种的第二层的膜的方法，并且可选地掺杂第二层。

公开(公告)号：US20130292806A1

公开(公告)日：2013-11-07

申请号：US13905932

申请日：2013-05-30

申请人： Paul F. Ma ,  Jennifer Meng Tseng ,  Mei Chang ,  Annamalai Lakshmanan ,  Jing Tang

发明人： Paul F. Ma ,  Jennifer Meng Tseng ,  Mei Chang ,  Annamalai Lakshmanan ,  Jing Tang

IPC分类号： H01L29/06 ,  H01L21/02

CPC分类号： H01L29/06 ,  C23C16/34 ,  C23C16/45525 ,  H01L21/02104 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76831 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76856 ,  H01L21/76862 ,  H01L21/76867 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： Described are methods of forming a semiconductor device. Certain methods comprises depositing a film comprising manganese nitride over a dielectric; depositing a copper seed layer over the film; and depositing a copper fill layer over the copper seed layer. Also described are semiconductor devices. Certain semiconductor devices comprise a low-k dielectric layer; a manganese nitride layer overlying the low-k dielectric layer; a seed layer selected from a copper seed layer or electrochemical deposition seed layer overlying the manganese nitride layer; a copper layer overlying the copper seed layer.

摘要翻译： 描述了形成半导体器件的方法。 某些方法包括在电介质上沉积包含氮化锰的膜; 在该膜上沉积铜种子层; 以及在铜种子层上沉积铜填充层。 还描述了半导体器件。 某些半导体器件包括低k电介质层; 覆盖低k电介质层的氮化锰层; 选自铜籽晶层或覆盖氮化锰层的电化学沉积种子层的晶种层; 覆铜层的铜层。

公开(公告)号：US08642468B2

公开(公告)日：2014-02-04

申请号：US13093710

申请日：2011-04-25

申请人： Seshadri Ganguli ,  Srinivas Gandikota ,  Yu Lei ,  Xinliang Lu ,  Sang Ho Yu ,  Hoon Kim ,  Paul F. Ma ,  Mei Chang ,  Maitreyee Mahajani ,  Patricia M. Liu

发明人： Seshadri Ganguli ,  Srinivas Gandikota ,  Yu Lei ,  Xinliang Lu ,  Sang Ho Yu ,  Hoon Kim ,  Paul F. Ma ,  Mei Chang ,  Maitreyee Mahajani ,  Patricia M. Liu

IPC分类号： H01L21/4763

CPC分类号： H01L21/28008 ,  C23C16/06 ,  C23C16/32 ,  C23C16/42 ,  C23C16/45542 ,  H01L21/28079 ,  H01L21/28088 ,  H01L21/28097 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76871 ,  H01L21/823814 ,  H01L21/823842 ,  H01L29/495 ,  H01L29/4966

摘要： Embodiments of the invention generally provide methods for depositing metal-containing materials and compositions thereof. The methods include deposition processes that form metal, metal carbide, metal silicide, metal nitride, and metal carbide derivatives by a vapor deposition process, including thermal decomposition, CVD, pulsed-CVD, or ALD. In one embodiment, a method for processing a substrate is provided which includes depositing a dielectric material having a dielectric constant greater than 10, forming a feature definition in the dielectric material, depositing a work function material conformally on the sidewalls and bottom of the feature definition, and depositing a metal gate fill material on the work function material to fill the feature definition, wherein the work function material is deposited by reacting at least one metal-halide precursor having the formula MXY, wherein M is tantalum, hafnium, titanium, and lanthanum, X is a halide selected from the group of fluorine, chlorine, bromine, or iodine, and y is from 3 to 5.

摘要翻译： 本发明的实施方案通常提供沉积含金属材料及其组合物的方法。 所述方法包括通过包括热分解，CVD，脉冲CVD或ALD的气相沉积工艺形成金属，金属碳化物，金属硅化物，金属氮化物和金属碳化物衍生物的沉积工艺。 在一个实施例中，提供了一种用于处理衬底的方法，其包括沉积具有大于10的介电常数的介电材料，在电介质材料中形成特征定义，在功能定义的侧壁和底部上共同保存功函件材料 并且将金属浇注填充材料沉积在功函材料上以填充特征定义，其中通过使具有式MXY的至少一种金属卤化物前体反应沉积功函材料，其中M是钽，铪，钛和 镧，X是选自氟，氯，溴或碘的卤化物，y为3〜5。

公开(公告)号：US08491967B2

公开(公告)日：2013-07-23

申请号：US12206705

申请日：2008-09-08

申请人： Paul F. Ma ,  Joseph F. Aubuchon ,  Mei Chang ,  Steven H. Kim ,  Dien-Yeh Wu ,  Norman M. Nakashima ,  Mark Johnson ,  Roja Palakodeti

发明人： Paul F. Ma ,  Joseph F. Aubuchon ,  Mei Chang ,  Steven H. Kim ,  Dien-Yeh Wu ,  Norman M. Nakashima ,  Mark Johnson ,  Roja Palakodeti

IPC分类号： B05D5/12

CPC分类号： C23C16/34 ,  C23C16/4411 ,  C23C16/45508 ,  C23C16/45531 ,  C23C16/45582 ,  H01L21/28562 ,  H01L21/76843

摘要： Embodiments of the invention provide a method for treating the inner surfaces of a processing chamber and depositing a material on a during a vapor deposition process, such as atomic layer deposition (ALD) or by chemical vapor deposition (CVD). In one embodiment, the inner surfaces of the processing chamber and the substrate may be exposed to a reagent, such as a hydrogenated ligand compound during a pretreatment process. The hydrogenated ligand compound may be the same ligand as a free ligand formed from the metal-organic precursor used during the subsequent deposition process. The free ligand is usually formed by hydrogenation or thermolysis during the deposition process. In one example, the processing chamber and substrate are exposed to an alkylamine compound (e.g., dimethylamine) during the pretreatment process prior to conducting the vapor deposition process which utilizes a metal-organic chemical precursor having alkylamino ligands, such as pentakis(dimethylamino) tantalum (PDMAT).

摘要翻译： 本发明的实施例提供了一种处理室的内表面和在诸如原子层沉积（ALD）或化学气相沉积（CVD））的气相沉积工艺期间沉积材料的方法。 在一个实施方案中，处理室和衬底的内表面可以在预处理过程中暴露于试剂，例如氢化配体化合物。 氢化配体化合物可以是与在随后的沉积工艺期间使用的金属 - 有机前体形成的游离配体相同的配体。 游离配体通常在沉积过程中通过氢化或热解形成。 在一个实例中，在进行气相沉积工艺之前，在预处理过程中，处理室和基板暴露于烷基胺化合物（例如二甲胺），其利用具有烷基氨基配体的金属有机化学前体，例如五（二甲基氨基）钽 （PDMAT）。

公开(公告)号：US20100062614A1

公开(公告)日：2010-03-11

申请号：US12206705

申请日：2008-09-08

申请人： Paul F. Ma ,  Joseph F. Aubuchon ,  Mei Chang ,  Steven H. Kim ,  Dien-Yeh Wu ,  Norman M. Nakashima ,  Mark Johnson ,  Roja Palakodeti

发明人： Paul F. Ma ,  Joseph F. Aubuchon ,  Mei Chang ,  Steven H. Kim ,  Dien-Yeh Wu ,  Norman M. Nakashima ,  Mark Johnson ,  Roja Palakodeti

IPC分类号： H01L21/314

CPC分类号： C23C16/34 ,  C23C16/4411 ,  C23C16/45508 ,  C23C16/45531 ,  C23C16/45582 ,  H01L21/28562 ,  H01L21/76843

摘要： Embodiments of the invention provide a method for treating the inner surfaces of a processing chamber and depositing a material on a during a vapor deposition process, such as atomic layer deposition (ALD) or by chemical vapor deposition (CVD). In one embodiment, the inner surfaces of the processing chamber and the substrate may be exposed to a reagent, such as a hydrogenated ligand compound during a pretreatment process. The hydrogenated ligand compound may be the same ligand as a free ligand formed from the metal-organic precursor used during the subsequent deposition process. The free ligand is usually formed by hydrogenation or thermolysis during the deposition process. In one example, the processing chamber and substrate are exposed to an alkylamine compound (e.g., dimethylamine) during the pretreatment process prior to conducting the vapor deposition process which utilizes a metal-organic chemical precursor having alkylamino ligands, such as pentakis(dimethylamino) tantalum (PDMAT).

摘要翻译： 本发明的实施例提供了一种处理室的内表面和在诸如原子层沉积（ALD）或化学气相沉积（CVD））的气相沉积工艺期间沉积材料的方法。 在一个实施方案中，处理室和衬底的内表面可以在预处理过程中暴露于试剂，例如氢化配体化合物。 氢化配体化合物可以是与在随后的沉积工艺期间使用的金属 - 有机前体形成的游离配体相同的配体。 游离配体通常在沉积过程中通过氢化或热解形成。 在一个实例中，在进行气相沉积工艺之前，在预处理过程中，处理室和基板暴露于烷基胺化合物（例如二甲胺），其利用具有烷基氨基配体的金属 - 有机化学前体，例如五（二甲基氨基）钽 （PDMAT）。

公开(公告)号：US20130098477A1

公开(公告)日：2013-04-25

申请号：US13653952

申请日：2012-10-17

申请人： Joseph Yudovsky ,  Mei Chang ,  Faruk Gungor ,  Paul F. Ma ,  David Chu ,  Chien-Teh Kao ,  Hyman Lam ,  Dien-Yeh Wu

发明人： Joseph Yudovsky ,  Mei Chang ,  Faruk Gungor ,  Paul F. Ma ,  David Chu ,  Chien-Teh Kao ,  Hyman Lam ,  Dien-Yeh Wu

IPC分类号： F17D3/00

CPC分类号： F17D3/00 ,  Y10T137/7833

摘要： Provided are gas distribution apparatus with a delivery channel having an inlet end, an outlet end and a plurality of apertures spaced along the length. The inlet end is connectable to an inlet gas source and the outlet end is connectible with a vacuum source. Also provided are gas distribution apparatus with spiral delivery channels, intertwined spiral delivery channels, splitting delivery channels, merging delivery channels and shaped delivery channels in which an inlet end and outlet end are configured for rapid exchange of gas within the delivery channels.

公开(公告)号：US20110263115A1

公开(公告)日：2011-10-27

申请号：US13093710

申请日：2011-04-25

申请人： Seshadri Ganguli ,  Srinivas Gandikota ,  Yu Lei ,  Xinliang Lu ,  Sang Ho Yu ,  Hoon Kim ,  Paul F. Ma ,  Mei Chang ,  Maitreyee Mahajani ,  Patricia M. Liu

发明人： Seshadri Ganguli ,  Srinivas Gandikota ,  Yu Lei ,  Xinliang Lu ,  Sang Ho Yu ,  Hoon Kim ,  Paul F. Ma ,  Mei Chang ,  Maitreyee Mahajani ,  Patricia M. Liu

IPC分类号： H01L21/3205

CPC分类号： H01L21/28008 ,  C23C16/06 ,  C23C16/32 ,  C23C16/42 ,  C23C16/45542 ,  H01L21/28079 ,  H01L21/28088 ,  H01L21/28097 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76871 ,  H01L21/823814 ,  H01L21/823842 ,  H01L29/495 ,  H01L29/4966

摘要： Embodiments of the invention generally provide methods for depositing metal-containing materials and compositions thereof. The methods include deposition processes that form metal, metal carbide, metal silicide, metal nitride, and metal carbide derivatives by a vapor deposition process, including thermal decomposition, CVD, pulsed-CVD, or ALD. In one embodiment, a method for processing a substrate is provided which includes depositing a dielectric material having a dielectric constant greater than 10, forming a feature definition in the dielectric material, depositing a work function material conformally on the sidewalls and bottom of the feature definition, and depositing a metal gate fill material on the work function material to fill the feature definition, wherein the work function material is deposited by reacting at least one metal-halide precursor having the formula MXY, wherein M is tantalum, hafnium, titanium, and lanthanum, X is a halide selected from the group of fluorine, chlorine, bromine, or iodine, and y is from 3 to 5.

摘要翻译： 本发明的实施方案通常提供沉积含金属材料及其组合物的方法。 所述方法包括通过包括热分解，CVD，脉冲CVD或ALD的气相沉积工艺形成金属，金属碳化物，金属硅化物，金属氮化物和金属碳化物衍生物的沉积工艺。 在一个实施例中，提供了一种用于处理衬底的方法，其包括沉积具有大于10的介电常数的介电材料，在电介质材料中形成特征定义，在功能定义的侧壁和底部上共同保存功函件材料 并且将金属浇注填充材料沉积在功函材料上以填充特征定义，其中通过使具有式MXY的至少一种金属卤化物前体反应沉积功函材料，其中M是钽，铪，钛和 镧，X是选自氟，氯，溴或碘的卤化物，y为3〜5。

公开(公告)号：US10593539B2

公开(公告)日：2020-03-17

申请号：US13457421

申请日：2012-04-26

申请人： Chien-Teh Kao ,  Joel M. Huston ,  Mei Chang ,  Xiaoxiong (John) Yuan

发明人： Chien-Teh Kao ,  Joel M. Huston ,  Mei Chang ,  Xiaoxiong (John) Yuan

IPC分类号： B23K10/00 ,  H01L21/02 ,  H01J37/32 ,  H01L21/67 ,  C23C14/54 ,  C23C14/50 ,  C23C14/02

摘要： A method and apparatus for removing native oxides from a substrate surface is provided. In one aspect, the apparatus comprises a support assembly. In one embodiment, the support assembly includes a shaft coupled to a disk-shaped body. The disk-shaped body includes an upper surface, a lower surface and a cylindrical outer surface. A flange extends radially outward from the cylindrical outer surface. A fluid channel is formed in the disk-shaped body and is coupled to the heat transfer fluid conduit of the shaft. A plurality of grooves formed in the upper surface are coupled by a hole to the vacuum conduit of the shaft. A gas conduit formed through the disk-shaped body couples the gas conduit of the shaft to the cylindrical outer surface of the disk-shaped body.

公开(公告)号：US09418890B2

公开(公告)日：2016-08-16

申请号：US14279260

申请日：2014-05-15

申请人： Paul Ma ,  Joseph F. Aubuchon ,  Jiang Lu ,  Mei Chang

发明人： Paul Ma ,  Joseph F. Aubuchon ,  Jiang Lu ,  Mei Chang

IPC分类号： H01L21/768 ,  C23C16/455 ,  C23C16/52

CPC分类号： H01L21/76841 ,  C23C16/45534 ,  C23C16/52

摘要： Embodiments of the invention provide methods for depositing a material on a substrate within a processing chamber during a vapor deposition process, such as an atomic layer deposition (ALD) process. In one embodiment, a method is provided which includes sequentially exposing the substrate to a first precursor gas and at least a second precursor gas while depositing a material on the substrate during the ALD process, and continuously or periodically exposing the substrate to a treatment gas prior to and/or during the ALD process. The deposition rate of the material being deposited may be controlled by varying the amount of treatment gas exposed to the substrate. In one example, tantalum nitride is deposited on the substrate and the alkylamino metal precursor gas contains a tantalum precursor, such as pentakis(dimethylamino) tantalum (PDMAT), the second precursor gas contains a nitrogen precursor, such as ammonia, and the treatment gas contains dimethylamine (DMA).

摘要翻译： 本发明的实施例提供了在诸如原子层沉积（ALD）工艺的气相沉积工艺期间将材料沉积在处理室内的衬底上的方法。 在一个实施例中，提供了一种方法，其包括在ALD工艺期间将衬底沉积到衬底上的同时将衬底依次暴露于第一前体气体和至少第二前体气体，并且连续地或周期地将衬底暴露于处理气体之前 到和/或在ALD过程期间。 可以通过改变暴露于衬底的处理气体的量来控制被沉积的材料的沉积速率。 在一个实例中，氮化钽沉积在衬底上，并且烷基氨基金属前体气体包含钽前体，例如五（二甲基氨基）钽（PDMAT）），第二前体气体含有氮前体如氨，并且处理气体 含有二甲胺（DMA）。

公开(公告)号：US09147578B2

公开(公告)日：2015-09-29

申请号：US13004740

申请日：2011-01-11

申请人： Xinliang Lu ,  Chien-Teh Kao ,  Chiukin Steve Lai ,  Mei Chang

发明人： Xinliang Lu ,  Chien-Teh Kao ,  Chiukin Steve Lai ,  Mei Chang

IPC分类号： H01L21/00 ,  H01L21/285 ,  H01L21/02 ,  H01L21/28 ,  H01L21/321 ,  H01L29/66

CPC分类号： H01L21/28518 ,  H01L21/0206 ,  H01L21/02063 ,  H01L21/02068 ,  H01L21/28061 ,  H01L21/321 ,  H01L29/665 ,  H01L29/6659 ,  Y10S438/906

摘要： Embodiments provide methods for treating a metal silicide contact which includes positioning a substrate having an oxide layer disposed on a metal silicide contact surface within a processing chamber, cleaning the metal silicide contact surface to remove the oxide layer while forming a cleaned silicide contact surface during a cleaning process, and exposing the cleaned silicide contact surface to a silicon-containing compound to form a recovered silicide contact surface during a regeneration process. In some examples, the cleaning of the metal silicide contact surface includes cooling the substrate to an initial temperature of less than 65° C., forming reactive species from a gas mixture of ammonia and nitrogen trifluoride by igniting a plasma, exposing the oxide layer to the reactive species to form a thin film, and heating the substrate to about 100° C. or greater to remove the thin film from the substrate while forming the cleaned silicide contact surface.

摘要翻译： 实施例提供了处理金属硅化物接触的方法，其包括将具有设置在处理室内的金属硅化物接触表面上的氧化物层的衬底定位，在金属硅化物接触表面中清洁金属硅化物接触表面以除去氧化物层同时形成清洁的硅化物接触表面 清洁工艺，以及将清洁的硅化物接触表面暴露于含硅化合物，以在再生过程中形成回收的硅化物接触表面。 在一些实例中，金属硅化物接触表面的清洁包括将衬底冷却至低于65℃的初始温度，通过点燃等离子体从氨和三氟化氮的气体混合物形成反应物质，将氧化物层暴露于 反应性物质形成薄膜，并将衬底加热至约100℃或更高以在形成清洁的硅化物接触表面的同时从衬底移除薄膜。