Photonic crystal resonator apparatus with improved out of plane coupling
    2.
    发明授权
    Photonic crystal resonator apparatus with improved out of plane coupling 有权
    具有改进的平面外耦合的光子晶体谐振器装置

    公开(公告)号:US06993234B1

    公开(公告)日:2006-01-31

    申请号:US10910216

    申请日:2004-08-03

    IPC分类号: G02B6/00 G02B6/10 G02B6/12

    摘要: A two-dimensional photonic crystal resonator apparatus in which the power of light coupled out of the apparatus in one direction is greater than the power of light coupled out of the apparatus in the opposite direction The apparatus has a photonic crystal slab waveguide structure having a waveguide and a resonator in the vicinity of the waveguide such that light propagated through the waveguide is extracted from the waveguide through the resonator and is coupled out of the plane of the apparatus. The apparatus has upper and lower cladding layers on the photonic crystal slab waveguide structure having different indices of refraction, and the power of light coupled out of the apparatus in the direction of the cladding layer having the higher index of refraction is greater than the power of the light coupled out of the apparatus in the direction of the cladding layer having the lower index of refraction.

    摘要翻译: 一种二维光子晶体谐振器装置,其中在一个方向上耦合出设备的光的功率大于在相反方向上耦合到设备外的光的功率。该装置具有光子晶体平板波导结构,其具有波导 以及在波导附近的谐振器,使得通过波导传播的光从波导通过谐振器提取出来并被耦合到设备的平面之外。 该装置在具有不同折射率的光子晶体平板波导结构上具有上包层和下包层,并且在具有较高折射率的包层的方向上耦合到装置外的光的功率大于 在具有较低折射率的包层的方向上耦合出装置的光。

    PHOTONIC CRYSTAL RESONATOR APPARATUS WITH IMPROVED OUT OF PLANE COUPLING
    3.
    发明申请
    PHOTONIC CRYSTAL RESONATOR APPARATUS WITH IMPROVED OUT OF PLANE COUPLING 有权
    具有改进的平面耦合的光子晶体谐振器装置

    公开(公告)号:US20060029347A1

    公开(公告)日:2006-02-09

    申请号:US10910216

    申请日:2004-08-03

    IPC分类号: G02B6/00 G02B6/10 G02B6/12

    摘要: A two-dimensional photonic crystal resonator apparatus in which the power of light coupled out of the apparatus in one direction is greater than the power of light coupled out of the apparatus in the opposite direction The apparatus has a photonic crystal slab waveguide structure having a waveguide and a resonator in the vicinity of the waveguide such that light propagated through the waveguide is extracted from the waveguide through the resonator and is coupled out of the plane of the apparatus. The apparatus has upper and lower cladding layers on the photonic crystal slab waveguide structure having different indices of refraction, and the power of light coupled out of the apparatus in the direction of the cladding layer having the higher index of refraction is greater than the power of the light coupled out of the apparatus in the direction of the cladding layer having the lower index of refraction.

    摘要翻译: 一种二维光子晶体谐振器装置,其中在一个方向上耦合出设备的光的功率大于在相反方向上耦合到设备外的光的功率。该装置具有光子晶体平板波导结构,其具有波导 以及在波导附近的谐振器,使得通过波导传播的光从波导通过谐振器提取出来并被耦合到设备的平面之外。 该装置在具有不同折射率的光子晶体平板波导结构上具有上包层和下包层,并且在具有较高折射率的包层的方向上耦合到装置外的光的功率大于 在具有较低折射率的包层的方向上耦合出装置的光。

    Wafer level edge stacking
    6.
    发明授权
    Wafer level edge stacking 有权
    晶圆级边缘堆叠

    公开(公告)号:US08680662B2

    公开(公告)日:2014-03-25

    申请号:US12456349

    申请日:2009-06-15

    IPC分类号: H01L23/02

    摘要: A microelectronic assembly can include a first microelectronic device and a second microelectronic device. Each microelectronic device has a die structure including at least one semiconductor die and each of the microelectronic devices has a first surface, a second surface remote from the first surface and at least one edge surface extending at angles other than a right angle away from the first and second surfaces. At least one electrically conductive element extends along the first surface onto at least one of the edge surfaces and onto the second surface. At least one conductive element of the first microelectronic device can be conductively bonded to the at least one conductive element of the second microelectronic device to provide an electrically conductive path therebetween.

    摘要翻译: 微电子组件可以包括第一微电子器件和第二微电子器件。 每个微电子器件具有包括至少一个半导体管芯的管芯结构,并且每个微电子器件具有第一表面,远离第一表面的第二表面和至少一个边缘表面,该边缘表面以远离第一表面的直角延伸 和第二表面。 至少一个导电元件沿着第一表面延伸到至少一个边缘表面上并且延伸到第二表面上。 第一微电子器件的至少一个导电元件可以导电地结合到第二微电子器件的至少一个导电元件,以在它们之间提供导电路径。

    Wafer level edge stacking
    8.
    发明申请
    Wafer level edge stacking 有权
    晶圆级边缘堆叠

    公开(公告)号:US20090316378A1

    公开(公告)日:2009-12-24

    申请号:US12456349

    申请日:2009-06-15

    IPC分类号: H05K7/02 H05K3/34

    摘要: A microelectronic assembly can include a first microelectronic device and a second microelectronic device. Each microelectronic device has a die structure including at least one semiconductor die and each of the microelectronic devices has a first surface, a second surface remote from the first surface and at least one edge surface extending at angles other than a right angle away from the first and second surfaces. At least one electrically conductive element extends along the first surface onto at least one of the edge surfaces and onto the second surface. At least one conductive element of the first microelectronic device can be conductively bonded to the at least one conductive element of the second microelectronic device to provide an electrically conductive path therebetween.

    摘要翻译: 微电子组件可以包括第一微电子器件和第二微电子器件。 每个微电子器件具有包括至少一个半导体管芯的管芯结构,并且每个微电子器件具有第一表面,远离第一表面的第二表面和至少一个边缘表面,该边缘表面以远离第一表面的直角延伸 和第二表面。 至少一个导电元件沿着第一表面延伸到至少一个边缘表面上并且延伸到第二表面上。 第一微电子器件的至少一个导电元件可以导电地结合到第二微电子器件的至少一个导电元件,以在它们之间提供导电路径。