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    Illumination sources with thermally-isolated electronics
    2.
    发明授权
    Illumination sources with thermally-isolated electronics 有权
    带隔离电子元件的照明源

    公开(公告)号：US08884517B1

    公开(公告)日：2014-11-11

    申请号：US13274489

    申请日：2011-10-17

    申请人： Frank Tin Chung Shum ,  Frank M. Steranka ,  Michael R. Krames

    发明人： Frank Tin Chung Shum ,  Frank M. Steranka ,  Michael R. Krames

    IPC分类号： H01K1/62 ,  H01J9/24

    CPC分类号： F21V29/15 ,  F21K9/23 ,  F21K9/90 ,  F21V29/70 ,  F21V29/74 ,  F21V29/83 ,  F21Y2105/10 ,  F21Y2115/10

    摘要： An lighting source includes a driver for outputting electrical power in response to external electrical power, wherein the driver generates heat in response thereto, a lamp coupled to the driver, for outputting light in response to the electrical power, wherein the lamp generates heat in response thereto, a first heat sink physically coupled to the driver for receiving and dissipating heat there from, a second heat sink physically coupled to the light for receiving heat and dissipating heat there from, and an insulating portion disposed between the first heat sink and the second heat sink, wherein the insulating portion is configured to inhibit heat from the lamp from being transferred to the driver.

    摘要翻译： 照明源包括用于响应于外部电力输出电力的驱动器，其中驱动器响应于此而产生热量，连接到驱动器的灯，用于响应于电功率而输出光，其中灯发出响应的热量 物理耦合到驱动器的第一散热器，用于从其接收和散发热量，物理耦合到光的第二散热器，用于接收热量并从中散发热量;以及绝缘部分，设置在第一散热器和第二散热器之间 散热器，其中所述绝缘部分被配置为抑制来自所述灯的热量被传送到所述驱动器。

    Bonding an optical element to a light emitting device
    3.
    发明授权
    Bonding an optical element to a light emitting device 有权
    将光学元件结合到发光器件

    公开(公告)号：US07419839B2

    公开(公告)日：2008-09-02

    申请号：US10987241

    申请日：2004-11-12

    申请人： Michael D. Camras ,  William R. Imler ,  Frank S. Wall, Jr ,  Frank M. Steranka ,  Michael R. Krames ,  Helena Ticha ,  Ladislav Tichy

    发明人： Michael D. Camras ,  William R. Imler ,  Frank S. Wall, Jr ,  Frank M. Steranka ,  Michael R. Krames ,  Helena Ticha ,  Ladislav Tichy

    IPC分类号： H01L21/00

    CPC分类号： H05B33/0857 ,  H01L25/0753 ,  H01L33/58 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A device is provided with at least one light emitting device (LED) die mounted on a submount with an optical element subsequently thermally bonded to the LED die. The LED die is electrically coupled to the submount through contact bumps that have a higher temperature melting point than is used to thermally bond the optical element to the LED die. In one implementation, a single optical element is bonded to a plurality of LED dice that are mounted to the submount and the submount and the optical element have approximately the same coefficients of thermal expansion. Alternatively, a number of optical elements may be used. The optical element or LED die may be covered with a coating of wavelength converting material. In one implementation, the device is tested to determine the wavelengths produced and additional layers of the wavelength converting material are added until the desired wavelengths are produced.

    摘要翻译： 设备具有至少一个发光器件（LED）裸片，该发光器件（LED）裸片安装在具有随后热粘合到LED管芯上的光学元件的基座上。 LED管芯通过接触凸块电连接到副安装座，接触凸块具有比用于将光学元件热粘合到LED管芯的温度高的熔点。 在一个实现中，单个光学元件被结合到安装到基座上的多个LED芯片，并且基座和光学元件具有大致相同的热膨胀系数。 或者，可以使用多个光学元件。 光学元件或LED管芯可以用波长转换材料的涂层覆盖。 在一个实施方案中，测试该器件以确定产生的波长，并且添加波长转换材料的附加层，直到产生所需的波长。

    A1InGaP LED having reduced temperature dependence
    6.
    发明授权
    A1InGaP LED having reduced temperature dependence 有权
    AlInGaP LED具有降低的温度依赖性

    公开(公告)号：US07863631B2

    公开(公告)日：2011-01-04

    申请号：US12433106

    申请日：2009-04-30

    申请人： Michael R. Krames ,  Nathan F. Gardner ,  Frank M. Steranka

    发明人： Michael R. Krames ,  Nathan F. Gardner ,  Frank M. Steranka

    IPC分类号： H01L33/00 ,  H01L29/221 ,  H01L29/225

    CPC分类号： H01L33/30 ,  H01L2224/13 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2224/0401

    摘要： To increase the lattice constant of AlInGaP LED layers to greater than the lattice constant of GaAs for reduced temperature sensitivity, an engineered growth layer is formed over a substrate, where the growth layer has a lattice constant equal to or approximately equal to that of the desired AlInGaP layers. In one embodiment, a graded InGaAs or InGaP layer is grown over a GaAs substrate. The amount of indium is increased during growth of the layer such that the final lattice constant is equal to that of the desired AlInGaP active layer. In another embodiment, a very thin InGaP, InGaAs, or AlInGaP layer is grown on a GaAs substrate, where the InGaP, InGaAs, or AlInGaP layer is strained (compressed). The InGaP, InGaAs, or AlInGaP thin layer is then delaminated from the GaAs and relaxed, causing the lattice constant of the thin layer to increase to the lattice constant of the desired overlying AlInGaP LED layers. The LED layers are then grown over the thin InGaP, InGaAs, or AlInGaP layer.

    摘要翻译： 为了将AlInGaP LED层的晶格常数提高到大于GaAs的晶格常数以降低温度敏感性，在衬底上形成工程化生长层，其中生长层具有等于或近似等于所需的晶格常数的晶格常数 AlInGaP层。 在一个实施例中，在GaAs衬底上生长渐变的InGaAs或InGaP层。 在层的生长期间铟的量增加，使得最终晶格常数等于所需的AlInGaP活性层的量。 在另一实施例中，在GaAs衬底上生长非常薄的InGaP，InGaAs或AlInGaP层，其中InGaP，InGaAs或AlInGaP层被应变（压缩）。 然后，InGaP，InGaAs或AlInGaP薄层从GaAs分层并且弛豫，导致薄层的晶格常数增加到期望的上覆AlInGaP LED层的晶格常数。 然后在薄的InGaP，InGaAs或AlInGaP层上生长LED层。

    AllnGaP LED having reduced temperature dependence
    7.
    发明授权
    AllnGaP LED having reduced temperature dependence 有权
    AllnGaP LED具有降低的温度依赖性

    公开(公告)号：US07544525B2

    公开(公告)日：2009-06-09

    申请号：US11672003

    申请日：2007-02-06

    申请人： Michael R. Krames ,  Nathan F. Gardner ,  Frank M. Steranka

    发明人： Michael R. Krames ,  Nathan F. Gardner ,  Frank M. Steranka

    IPC分类号： H01L21/00

    CPC分类号： H01L33/30 ,  H01L2224/13 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2224/0401

    摘要： To increase the lattice constant of AlInGaP LED layers to greater than the lattice constant of GaAs for reduced temperature sensitivity, an engineered growth layer is formed over a substrate, where the growth layer has a lattice constant equal to or approximately equal to that of the desired AlInGaP layers. In one embodiment, a graded InGaAs or InGaP layer is grown over a GaAs substrate. The amount of indium is increased during growth of the layer such that the final lattice constant is equal to that of the desired AlInGaP active layer. In another embodiment, a very thin InGaP, InGaAs, or AlInGaP layer is grown on a GaAs substrate, where the InGaP, InGaAs, or AlInGaP layer is strained (compressed). The InGaP, InGaAs, or AlInGaP thin layer is then delaminated from the GaAs and relaxed, causing the lattice constant of the thin layer to increase to the lattice constant of the desired overlying AlInGaP LED layers. The LED layers are then grown over the thin InGaP, InGaAs, or AlInGaP layer.

    摘要翻译： 为了将AlInGaP LED层的晶格常数提高到大于GaAs的晶格常数以降低温度敏感性，在衬底上形成工程化生长层，其中生长层具有等于或近似等于所需的晶格常数的晶格常数 AlInGaP层。 在一个实施例中，在GaAs衬底上生长渐变的InGaAs或InGaP层。 在层的生长期间铟的量增加，使得最终晶格常数等于所需的AlInGaP活性层的量。 在另一实施例中，在GaAs衬底上生长非常薄的InGaP，InGaAs或AlInGaP层，其中InGaP，InGaAs或AlInGaP层被应变（压缩）。 然后，InGaP，InGaAs或AlInGaP薄层从GaAs分层并且弛豫，导致薄层的晶格常数增加到期望的上覆AlInGaP LED层的晶格常数。 然后在薄的InGaP，InGaAs或AlInGaP层上生长LED层。

    Common optical element for an array of phosphor converted light emitting devices
    10.
    发明授权
    Common optical element for an array of phosphor converted light emitting devices 有权
    用于荧光体转换发光器件的阵列的普通光学元件

    公开(公告)号：US08748912B2

    公开(公告)日：2014-06-10

    申请号：US13288291

    申请日：2011-11-03

    申请人： Michael D. Camras ,  William R. Imler ,  Franklin J. Wall, Jr. ,  Frank M. Steranka ,  Michael R. Krames ,  Helena Ticha ,  Ladislav Tichy ,  Robertus G. Alferink

    发明人： Michael D. Camras ,  William R. Imler ,  Franklin J. Wall, Jr. ,  Frank M. Steranka ,  Michael R. Krames ,  Helena Ticha ,  Ladislav Tichy ,  Robertus G. Alferink

    IPC分类号： H01L33/00

    CPC分类号： H05B33/0857 ,  H01L25/0753 ,  H01L33/58 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A device is provided with at least one light emitting device (LED) die mounted on a submount with an optical element subsequently thermally bonded to the LED die. The LED die is electrically coupled to the submount through contact bumps that have a higher temperature melting point than is used to thermally bond the optical element to the LED die. In one implementation, a single optical element is bonded to a plurality of LED dice that are mounted to the submount and the submount and the optical element have approximately the same coefficients of thermal expansion. Alternatively, a number of optical elements may be used. The optical element or LED die may be covered with a coating of wavelength converting material. In one implementation, the device is tested to determine the wavelengths produced and additional layers of the wavelength converting material are added until the desired wavelengths are produced.

    摘要翻译： 设备具有至少一个发光器件（LED）裸片，该发光器件（LED）裸片安装在具有随后热粘合到LED管芯上的光学元件的基座上。 LED管芯通过接触凸块电连接到副安装座，接触凸块具有比用于将光学元件热粘合到LED管芯的温度高的熔点。 在一个实现中，单个光学元件被结合到安装到基座上的多个LED芯片，并且基座和光学元件具有大致相同的热膨胀系数。 或者，可以使用多个光学元件。 光学元件或LED管芯可以用波长转换材料的涂层覆盖。 在一个实施方案中，测试该器件以确定产生的波长，并且添加波长转换材料的附加层，直到产生所需的波长。