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1.发明申请Solder Interconnect with Non-Wettable Sidewall Pillars and Methods of Manufacture 有权焊接与不可湿润的侧壁支柱和制造方法互连公开(公告)号：US20110193218A1
公开(公告)日：2011-08-11
申请号：US12700863
申请日：2010-02-05
申请人： Charles L. Arvin , Raschid J. Bezama , Timothy H. Daubenspeck , Jeffrey P. Gambino , Christopher D. Muzzy , David L. Questad , Wolfgang Sauter , Timothy D. Sullivan , Brian R. Sundlof
发明人： Charles L. Arvin , Raschid J. Bezama , Timothy H. Daubenspeck , Jeffrey P. Gambino , Christopher D. Muzzy , David L. Questad , Wolfgang Sauter , Timothy D. Sullivan , Brian R. Sundlof
IPC分类号： H01L23/498 , H01L21/768
CPC分类号： H01L24/13 , H01L23/49811 , H01L24/11 , H01L24/16 , H01L2224/0401 , H01L2224/05647 , H01L2224/05655 , H01L2224/05666 , H01L2224/10126 , H01L2224/11334 , H01L2224/1146 , H01L2224/1147 , H01L2224/1182 , H01L2224/119 , H01L2224/13017 , H01L2224/13018 , H01L2224/1308 , H01L2224/13083 , H01L2224/13084 , H01L2224/13101 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13565 , H01L2224/1357 , H01L2224/13687 , H01L2924/01005 , H01L2924/01006 , H01L2924/01019 , H01L2924/01029 , H01L2924/01033 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/14 , H01L2924/3841 , H01L2924/00014 , H01L2924/01024 , H01L2924/01026 , H01L2924/01032 , H01L2924/00012 , H01L2924/00
摘要： A solder interconnect structure is provided with non-wettable sidewalls and methods of manufacturing the same. The method includes forming a nickel or nickel alloy pillar on an underlying surface. The method further includes modifying the sidewall of the nickel or nickel alloy pillar to prevent solder wetting on the sidewall.
摘要翻译： 焊接互连结构设置有不可润湿的侧壁及其制造方法。 该方法包括在下面的表面上形成镍或镍合金支柱。 该方法还包括修改镍或镍合金柱的侧壁以防止在侧壁上的焊料润湿。
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公开(公告)号：US20130299989A1
公开(公告)日：2013-11-14
申请号：US13468750
申请日：2012-05-10
申请人： Charles L. Arvin , Timothy H. Daubenspeck , Jeffrey P. Gambino , Christopher D. Muzzy , Wolfgang Sauter , Timothy D. Sullivan
发明人： Charles L. Arvin , Timothy H. Daubenspeck , Jeffrey P. Gambino , Christopher D. Muzzy , Wolfgang Sauter , Timothy D. Sullivan
IPC分类号： H01L23/52 , H01L21/768
CPC分类号： H01L24/11 , H01L23/49811 , H01L24/03 , H01L24/05 , H01L24/13 , H01L2224/03452 , H01L2224/0346 , H01L2224/0348 , H01L2224/03912 , H01L2224/0401 , H01L2224/05026 , H01L2224/05147 , H01L2224/05571 , H01L2224/05572 , H01L2224/056 , H01L2224/11 , H01L2224/11005 , H01L2224/11452 , H01L2224/1146 , H01L2224/11472 , H01L2224/11903 , H01L2224/11906 , H01L2224/13 , H01L2224/13006 , H01L2224/13076 , H01L2224/13082 , H01L2224/13083 , H01L2224/13084 , H01L2224/131 , H01L2224/13147 , H01L2224/16238 , H01L2924/00014 , H01L2924/01029 , H01L2924/014 , H01L2924/12042 , H01L2924/00012 , H01L2224/05552 , H01L2924/00
摘要： Chip connection structures and related methods of forming such structures are disclosed. In one case, an interconnect structure is disclosed, the structure including: a pillar connecting an integrated circuit chip and a substrate, the pillar including a barrier layer, a first copper layer over the barrier layer, and a first solder layer over the first copper layer.
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3.发明授权Solder interconnect with non-wettable sidewall pillars and methods of manufacture 有权具有不可润湿侧壁柱的焊接互连和制造方法公开(公告)号：US08637392B2
公开(公告)日：2014-01-28
申请号：US12700863
申请日：2010-02-05
申请人： Charles L. Arvin , Raschid J. Bezama , Timothy H. Daubenspeck , Jeffrey P. Gambino , Christopher D. Muzzy , David L. Questad , Wolfgang Sauter , Timothy D. Sullivan , Brian R. Sundlof
发明人： Charles L. Arvin , Raschid J. Bezama , Timothy H. Daubenspeck , Jeffrey P. Gambino , Christopher D. Muzzy , David L. Questad , Wolfgang Sauter , Timothy D. Sullivan , Brian R. Sundlof
IPC分类号： H01L21/44
CPC分类号： H01L24/13 , H01L23/49811 , H01L24/11 , H01L24/16 , H01L2224/0401 , H01L2224/05647 , H01L2224/05655 , H01L2224/05666 , H01L2224/10126 , H01L2224/11334 , H01L2224/1146 , H01L2224/1147 , H01L2224/1182 , H01L2224/119 , H01L2224/13017 , H01L2224/13018 , H01L2224/1308 , H01L2224/13083 , H01L2224/13084 , H01L2224/13101 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13565 , H01L2224/1357 , H01L2224/13687 , H01L2924/01005 , H01L2924/01006 , H01L2924/01019 , H01L2924/01029 , H01L2924/01033 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/14 , H01L2924/3841 , H01L2924/00014 , H01L2924/01024 , H01L2924/01026 , H01L2924/01032 , H01L2924/00012 , H01L2924/00
摘要： A solder interconnect structure is provided with non-wettable sidewalls and methods of manufacturing the same. The method includes forming a nickel or nickel alloy pillar on an underlying surface. The method further includes modifying the sidewall of the nickel or nickel alloy pillar to prevent solder wetting on the sidewall.
摘要翻译： 焊接互连结构设置有不可润湿的侧壁及其制造方法。 该方法包括在下面的表面上形成镍或镍合金支柱。 该方法还包括修改镍或镍合金柱的侧壁以防止在侧壁上的焊料润湿。
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4.发明授权Undercut-repair of barrier layer metallurgy for solder bumps and methods thereof 有权用于焊料凸块的阻挡层冶金的底切修复及其方法公开(公告)号：US08298930B2
公开(公告)日：2012-10-30
申请号：US12959697
申请日：2010-12-03
申请人： Charles L. Arvin , Timothy H. Daubenspeck , Jeffrey P. Gambino , Christopher D. Muzzy , Wolfgang Sauter
发明人： Charles L. Arvin , Timothy H. Daubenspeck , Jeffrey P. Gambino , Christopher D. Muzzy , Wolfgang Sauter
IPC分类号： H01L23/488
CPC分类号： H01L24/11 , H01L24/13 , H01L2224/02126 , H01L2224/0361 , H01L2224/0382 , H01L2224/03912 , H01L2224/10126 , H01L2224/1147 , H01L2224/1182 , H01L2224/11912 , H01L2224/13099 , H01L2224/131 , H01L2224/13111 , H01L2924/0001 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01072 , H01L2924/01074 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/14 , H01L2924/00014 , H01L2924/00
摘要： A method of making a semiconductor structure includes patterning a barrier layer metallurgy (BLM) which forms an undercut beneath a solder material, and forming a repair material in the undercut and on the solder material. The method also includes removing the repair material from the solder material, and reflowing the solder material.
摘要翻译： 制造半导体结构的方法包括图案化在焊料材料下形成底切的阻挡层冶金（BLM），以及在底切和焊料材料上形成修复材料。 该方法还包括从焊料材料中去除修复材料，以及回流焊料。
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5.发明申请UNDERCUT-REPAIR OF BARRIER LAYER METALLURGY FOR SOLDER BUMPS AND METHODS THEREOF 有权用于焊接金属的阻隔层冶金的修理及其方法公开(公告)号：US20120139113A1
公开(公告)日：2012-06-07
申请号：US12959697
申请日：2010-12-03
申请人： Charles L. Arvin , Timothy H. Daubenspeck , Jeffrey P. Gambino , Christopher D. Muzzy , Wolfgang Sauter
发明人： Charles L. Arvin , Timothy H. Daubenspeck , Jeffrey P. Gambino , Christopher D. Muzzy , Wolfgang Sauter
IPC分类号： H01L23/48 , H01L21/3205
CPC分类号： H01L24/11 , H01L24/13 , H01L2224/02126 , H01L2224/0361 , H01L2224/0382 , H01L2224/03912 , H01L2224/10126 , H01L2224/1147 , H01L2224/1182 , H01L2224/11912 , H01L2224/13099 , H01L2224/131 , H01L2224/13111 , H01L2924/0001 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01072 , H01L2924/01074 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/14 , H01L2924/00014 , H01L2924/00
摘要： A method of making a semiconductor structure includes patterning a barrier layer metallurgy (BLM) which forms an undercut beneath a solder material, and forming a repair material in the undercut and on the solder material. The method also includes removing the repair material from the solder material, and reflowing the solder material.
摘要翻译： 制造半导体结构的方法包括图案化在焊料材料下形成底切的阻挡层冶金（BLM），以及在底切和焊料材料上形成修复材料。 该方法还包括从焊料材料中去除修复材料，以及回流焊料。
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6.发明授权公开(公告)号：US08803317B2
公开(公告)日：2014-08-12
申请号：US13433974
申请日：2012-03-29
申请人： Charles L. Arvin , Raschid J. Bezama , Harry D. Cox , Timothy H. Daubenspeck , Krystyna W. Semkow , Timothy D. Sullivan
发明人： Charles L. Arvin , Raschid J. Bezama , Harry D. Cox , Timothy H. Daubenspeck , Krystyna W. Semkow , Timothy D. Sullivan
CPC分类号： H01L24/05 , C25D5/02 , C25D5/14 , C25D5/48 , H01L24/11 , H01L2224/0401 , H01L2224/05075 , H01L2224/05147 , H01L2224/05155 , H01L2224/05166 , H01L2224/05647 , H01L2224/05655 , H01L2224/13099 , H01L2924/01322 , H01L2924/014 , H01L2924/1305 , H01L2924/14 , H01L2924/00 , H01L2924/00014 , H01L2924/01074 , H01L2924/013 , H01L2924/01027
摘要： Interconnect structures and methods of fabricating the same are provided. The interconnect structures provide highly reliable copper interconnect structures for improving current carrying capabilities (e.g., current spreading). The structure includes an under bump metallurgy formed in a trench. The under bump metallurgy includes at least: an adhesion layer; a plated barrier layer; and a plated conductive metal layer provided between the adhesion layer and the plated barrier layer. The structure further includes a solder bump formed on the under bump metallurgy.
摘要翻译： 提供互连结构及其制造方法。 互连结构提供用于改善载流能力（例如，电流扩展）的高可靠性铜互连结构。 该结构包括在沟槽中形成的凸块下金属。 凸起下冶金至少包括：粘合层; 电镀阻挡层; 以及设置在粘合层和镀层阻挡层之间的镀覆导电金属层。 该结构还包括形成在凸块下金属上的焊料凸块。
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7.发明申请公开(公告)号：US20100258335A1
公开(公告)日：2010-10-14
申请号：US12421723
申请日：2009-04-10
申请人： Charles L. Arvin , Raschid J. Bezama , Harry D. Cox , Timothy H. Daubenspeck , Krystyna W. Semkow , Timothy D. Sullivan
发明人： Charles L. Arvin , Raschid J. Bezama , Harry D. Cox , Timothy H. Daubenspeck , Krystyna W. Semkow , Timothy D. Sullivan
CPC分类号： H01L24/05 , C25D5/02 , C25D5/14 , C25D5/48 , H01L24/11 , H01L2224/0401 , H01L2224/05075 , H01L2224/05147 , H01L2224/05155 , H01L2224/05166 , H01L2224/05647 , H01L2224/05655 , H01L2224/13099 , H01L2924/01322 , H01L2924/014 , H01L2924/1305 , H01L2924/14 , H01L2924/00 , H01L2924/00014 , H01L2924/01074 , H01L2924/013 , H01L2924/01027
摘要： Interconnect structures and methods of fabricating the same are provided. The interconnect structures provide highly reliable copper interconnect structures for improving current carrying capabilities (e.g., current spreading). The structure includes an under bump metallurgy formed in a trench. The under bump metallurgy includes at least: an adhesion layer; a plated barrier layer; and a plated conductive metal layer provided between the adhesion layer and the plated barrier layer. The structure further includes a solder bump formed on the under bump metallurgy.
摘要翻译： 提供互连结构及其制造方法。 互连结构提供用于改善载流能力（例如，电流扩展）的高可靠性铜互连结构。 该结构包括在沟槽中形成的凸块下金属。 凸起下冶金至少包括：粘合层; 电镀阻挡层; 以及设置在粘合层和镀层阻挡层之间的镀覆导电金属层。 该结构还包括形成在凸块下金属上的焊料凸块。
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8.发明授权公开(公告)号：US09035459B2
公开(公告)日：2015-05-19
申请号：US12421723
申请日：2009-04-10
申请人： Charles L. Arvin , Raschid J. Bezama , Harry D. Cox , Timothy H. Daubenspeck , Krystyna W. Semkow , Timothy D. Sullivan
发明人： Charles L. Arvin , Raschid J. Bezama , Harry D. Cox , Timothy H. Daubenspeck , Krystyna W. Semkow , Timothy D. Sullivan
CPC分类号： H01L24/05 , C25D5/02 , C25D5/14 , C25D5/48 , H01L24/11 , H01L2224/0401 , H01L2224/05075 , H01L2224/05147 , H01L2224/05155 , H01L2224/05166 , H01L2224/05647 , H01L2224/05655 , H01L2224/13099 , H01L2924/01322 , H01L2924/014 , H01L2924/1305 , H01L2924/14 , H01L2924/00 , H01L2924/00014 , H01L2924/01074 , H01L2924/013 , H01L2924/01027
摘要： Interconnect structures and methods of fabricating the same are provided. The interconnect structures provide highly reliable copper interconnect structures for improving current carrying capabilities (e.g., current spreading). The structure includes an under bump metallurgy formed in a trench. The under bump metallurgy includes at least: an adhesion layer; a plated barrier layer; and a plated conductive metal layer provided between the adhesion layer and the plated barrier layer. The structure further includes a solder bump formed on the under bump metallurgy.
摘要翻译： 提供互连结构及其制造方法。 互连结构提供用于改善载流能力（例如，电流扩展）的高可靠性铜互连结构。 该结构包括在沟槽中形成的凸块下金属。 凸起下冶金至少包括：粘合层; 电镀阻挡层; 以及设置在粘合层和镀层阻挡层之间的镀覆导电金属层。 该结构还包括形成在凸块下金属上的焊料凸块。
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公开(公告)号：US08742578B2
公开(公告)日：2014-06-03
申请号：US13552792
申请日：2012-07-19
IPC分类号： H01L23/48
CPC分类号： H01L23/49816 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/14 , H01L24/16 , H01L24/17 , H01L2224/0401 , H01L2224/05571 , H01L2224/05647 , H01L2224/05655 , H01L2224/05666 , H01L2224/1147 , H01L2224/11849 , H01L2224/13139 , H01L2224/1403 , H01L2224/141 , H01L2224/16237 , H01L2224/81193 , H01L2224/81439 , H01L2224/81815 , H01L2224/94 , H01L2924/00014 , H01L2924/01074 , H01L2924/00012 , H01L2924/014 , H01L2224/81 , H01L2224/11 , H01L2224/05552
摘要： An integrated circuit (IC) chip including solder structures for connection to a package substrate, an IC chip package, and a method of forming the same are disclosed. In an embodiment, an IC chip is provided comprising a wafer having a plurality of solder structures disposed above the wafer. A ball limiting metallurgy (BLM) layer is disposed between each of the plurality of solder structures and the wafer. At least one of the plurality of solder structures has a first diameter and a first height, and at least one other solder structure has a second diameter and a second height. The differing heights and volumes of solder structures facilitate solder volume compensation for chip join improvement on the IC chip side rather than the package side.
摘要翻译： 公开了一种集成电路（IC）芯片，其包括用于连接到封装衬底的焊料结构，IC芯片封装及其形成方法。 在一个实施例中，提供一种IC芯片，其包括具有设置在晶片上方的多个焊料结构的晶片。 球限制冶金（BLM）层设置在多个焊料结构和晶片之间。 多个焊料结构中的至少一个具有第一直径和第一高度，并且至少一个其它焊料结构具有第二直径和第二高度。 焊料结构的不同高度和体积有助于在IC芯片侧而不是封装侧进行芯片连接改进的焊料体积补偿。
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公开(公告)号：US08592976B2
公开(公告)日：2013-11-26
申请号：US13615826
申请日：2012-09-14
IPC分类号： H01L23/48
CPC分类号： H01L24/11 , H01L24/03 , H01L24/05 , H01L24/12 , H01L24/94 , H01L2224/03912 , H01L2224/0401 , H01L2224/05557 , H01L2224/05558 , H01L2224/05559 , H01L2224/1147 , H01L2224/13006 , H01L2224/13017 , H01L2224/13022 , H01L2224/13099 , H01L2224/274 , H01L2924/01005 , H01L2924/01006 , H01L2924/01014 , H01L2924/01022 , H01L2924/01023 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/04953 , H01L2924/05042 , H01L2924/14 , H01L2924/19041 , H01L2924/19043 , H01L2924/00012
摘要： A structure. The structure includes: a first dielectric layer which includes a top dielectric surface; an electrically conductive line on the first dielectric layer; a second dielectric layer on the first dielectric layer and the electrically conductive line; a ball-limiting-metallurgy (BLM) region on the second dielectric layer and the electrically conductive line such that the BLM region is electrically connected to the electrically conductive line; and a solder ball on the BLM region. The BLM region has a characteristic that a length of the longest straight line segment which is parallel to the top dielectric surface and is entirely in the BLM region does not exceed a pre-specified maximum value, wherein the pre-specified maximum value is at most one-half of a maximum horizontal dimension of the BLM region measured in a horizontal direction parallel to the top dielectric surface.
摘要翻译： 一个结构。 该结构包括：第一电介质层，其包括顶部电介质表面; 在所述第一电介质层上的导电线; 在所述第一电介质层和所述导电线上的第二电介质层; 所述第二电介质层和所述导电线上的限界冶金（BLM）区域使得所述BLM区电连接到所述导电线; 和BLM区域上的焊球。 BLM区域的特征在于，平行于顶部电介质表面并且完全在BLM区域中的最长直线段的长度不超过预定的最大值，其中预定的最大值最多为 BLM区域的最大水平尺寸的一半在平行于顶部电介质表面的水平方向上测量。
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