公开(公告)号：US07621794B2

公开(公告)日：2009-11-24

申请号：US11271410

申请日：2005-11-09

申请人： Chung J. Lee ,  Atul Kumar ,  Chieh Chen

发明人： Chung J. Lee ,  Atul Kumar ,  Chieh Chen

IPC分类号： H05B33/10 ,  H01L51/56 ,  G02F1/335 ,  C03B27/00

CPC分类号： H01L51/5256 ,  Y10T428/1082 ,  Y10T428/2852

摘要： A method of encapsulating an organic light-emitting device is disclosed, wherein the device includes a light-emitting portion and an electrical contact portion, the method including forming a polymer layer over the light-emitting portion and the electrical contact portion of the device; forming a separation in the polymer layer between a portion of the polymer layer disposed over the light-emitting portion of the device and a portion of the polymer layer disposed over the electrical contact portion of the device; adhering a film removal structure to the portion of the polymer layer disposed over the electrical contact portion of the device; and removing the film removal structure, thereby causing the removal of the portion of the polymer layer disposed over the electrical contact portion of the device.

摘要翻译： 公开了一种封装有机发光器件的方法，其中该器件包括发光部分和电接触部分，该方法包括在器件的发光部分和电接触部分上形成聚合物层; 在所述聚合物层的设置在所述器件的发光部分之上的部分和设置在所述器件的电接触部分之上的聚合物层的一部分之间的聚合物层中形成分离; 将膜去除结构粘附到设置在所述器件的电接触部分上方的聚合物层的部分; 并去除膜去除结构，从而导致去除设置在器件的电接触部分上的聚合物层的部分。

公开(公告)号：US20080213579A1

公开(公告)日：2008-09-04

申请号：US12075995

申请日：2008-03-14

申请人： Chung J. Lee ,  Chieh Chen ,  Atul Kumar

发明人： Chung J. Lee ,  Chieh Chen ,  Atul Kumar

IPC分类号： C09K11/00 ,  B32B27/06 ,  B32B9/04 ,  B05D5/12

CPC分类号： B05D1/60 ,  B05D3/0254 ,  B29C71/02 ,  B29C2071/022 ,  B29C2071/025 ,  B29C2071/027 ,  C08G61/02 ,  C08G61/025 ,  C08G2261/3424 ,  C08J5/18 ,  H01L21/0212 ,  H01L21/02271 ,  H01L21/31058 ,  H01L21/3127 ,  Y10T428/269 ,  Y10T428/3154 ,  Y10T428/31544 ,  Y10T428/31855

摘要： In an organic light emitting device package including a plurality of layers of materials formed on a substrate the plurality of layers of materials including an organic light emitting layer a protective barrier for protecting the organic light emitting device from environmental degradation the protective barrier comprising a first semi-crystalline parylene-based layer an inorganic barrier layer and a second semi-crystalline parylene-based layer.

摘要翻译： 在包括形成在基板上的多层材料的有机发光器件封装中，包括有机发光层的多层材料是用于保护有机发光器件免受环境恶化的保护屏障，该保护屏障包括第一半 结晶聚对二甲苯基层为无机阻挡层和第二半结晶聚对二甲苯基层。

公开(公告)号：US07094661B2

公开(公告)日：2006-08-22

申请号：US10815994

申请日：2004-03-31

申请人： Chung J. Lee ,  Atul Kumar

发明人： Chung J. Lee ,  Atul Kumar

IPC分类号： H01L21/76

CPC分类号： H01L21/76825 ,  H01L21/76807 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76832

摘要： A method of forming an electrically conductive element in an integrated circuit is disclosed. The method includes depositing a composite polymer dielectric film onto a silicon-containing substrate, wherein the composite polymer dielectric film includes a silane-containing adhesion promoter layer formed on the silicon-containing substrate, and a low dielectric constant polymer layer formed on the adhesion promoter layer, depositing a silane-containing hard mask layer onto the composite polymer dielectric film, exposing the adhesion promoter layer and the hard mask layer to a free radical-generating energy source to chemically bond the adhesion promoter layer to the underlying silicon-containing substrate and to the low dielectric constant polymer layer, and to chemically bond the composite polymer dielectric film to the hard mask layer, etching an etched feature in the hard mask layer and the composite polymer dielectric film, and depositing an electrically conductive material in the etched feature.

摘要翻译： 公开了一种在集成电路中形成导电元件的方法。 该方法包括将复合聚合物电介质膜沉积到含硅衬底上，其中复合聚合物电介质膜包括在含硅衬底上形成的含硅烷的粘合促进剂层，以及形成在粘合促进剂上的低介电常数聚合物层 将含硅烷的硬掩模层沉积到复合聚合物电介质膜上，将粘附促进剂层和硬掩模层暴露于自由基产生能量源以将粘附促进剂层化学键合到下面的含硅基材上;以及 到低介电常数聚合物层，并且将复合聚合物电介质膜化学键合到硬掩模层，蚀刻硬掩模层和复合聚合物电介质膜中的蚀刻特征，以及在蚀刻特征中沉积导电材料。

公开(公告)号：US6114227A

公开(公告)日：2000-09-05

申请号：US280258

申请日：1999-03-29

申请人： David Leksell ,  Ming Xi Chan ,  Joseph P. Ellul ,  Jeanne L. Luce ,  David T. Ryan ,  Iqbal A. Shareef ,  Chung J. Lee ,  Stephen M. Campbell ,  Giovanni Antonio Foggiato

发明人： David Leksell ,  Ming Xi Chan ,  Joseph P. Ellul ,  Jeanne L. Luce ,  David T. Ryan ,  Iqbal A. Shareef ,  Chung J. Lee ,  Stephen M. Campbell ,  Giovanni Antonio Foggiato

IPC分类号： C23C16/44 ,  C23C16/455 ,  H01L21/205 ,  H01L21/20

CPC分类号： C23C16/45502 ,  C23C16/4401 ,  C23C16/455 ,  C23C16/45563

摘要： This invention relates to the design of apparatus for processing electronic devices, including equipment for chemical vapor deposition or transport polymerization. The new designs of gas separator plates, their configuration, and the regulation of gas flows through the system provides control over the pattern of precursor gas flow away from the separation plates, thereby decreasing the amount of byproducts that are deposited on the plates and throughout the reactor. New designs for shaping other surfaces of the dispersion head reduces contamination of those elements, and new designs for chamber panels decrease the deposition of byproducts on those surfaces, as well as other elements of the reactor. Decreasing deposition of byproducts increases the amount and the quality of the film that can be deposited without requiring the system to be shut down for cleaning. This increases the throughput of products in the deposition process, thereby increasing the efficiency of electronic device manufacture and lowering the cost.

摘要翻译： 本发明涉及用于处理电子设备的装置的设计，包括用于化学气相沉积或运输聚合的设备。 气体分离器板的新设计，其结构和通过系统的气体流量的调节提供了控制离开分离板的前体气体流动的模式，从而减少了沉积在板上和整个过程中的副产物的量 反应堆。 用于成型分散头的其它表面的新设计减少了这些元件的污染，并且用于室板的新设计降低了在那些表面上以及反应器的其它元件的副产物的沉积。 副产物的沉积减少增加了可以沉积的膜的量和质量，而不需要系统关闭清洁。 这增加了沉积工艺中产品的生产量，从而提高了电子设备制造的效率并降低了成本。

公开(公告)号：US6051321A

公开(公告)日：2000-04-18

申请号：US957480

申请日：1997-10-24

申请人： Chung J. Lee ,  Hui Wang ,  Giovanni Antonio Foggiato

发明人： Chung J. Lee ,  Hui Wang ,  Giovanni Antonio Foggiato

IPC分类号： H05H1/46 ,  B05D7/24 ,  B32B9/00 ,  C08J7/18 ,  C09D4/00 ,  C23C16/30 ,  C23C16/40 ,  C23C16/44 ,  C23C16/48 ,  C23C16/50 ,  H01L21/312 ,  H01L21/314 ,  H01L21/768 ,  H01L23/522 ,  B32B9/04

CPC分类号： B05D1/62 ,  C09D4/00 ,  C23C16/30 ,  C23C16/402 ,  H01L21/02126 ,  H01L21/02131 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/312 ,  H01L21/3121 ,  H01L21/3122 ,  H01L21/3127

摘要： Intermetal dielectric (IMD) and interlevel dielectric (ILD) that have dielectric constants (K) ranging from 2.0 to 2.6 are prepared from plasma or photon assisted CVD (PACVD) or transport polymerization (TP). The low K dielectric (LKD) materials are prepared from PACVD or TP of some selected siloxanes and F-containing aromatic compounds. The thin films combine barrier and adhesion layer functions with low dielectric constant functions, thus eliminating the necessity for separate adhesion and barrier layers, and layers of low dielectric constant. The LKD materials disclosed in this invention are particularly useful for

摘要翻译： 介电常数（K）范围为2.0至2.6的金属间电介质（IMD）和层间电介质（ILD）由等离子体或光子辅助CVD（PACVD）或运输聚合（TP）制备。 低K电介质（LKD）材料由一些选定的硅氧烷和含F芳族化合物的PACVD或TP制备。 薄膜结合具有低介电常数函数的屏障和粘附层功能，从而消除了单独粘附和阻挡层以及低介电常数层的必要性。 本发明中公开的LKD材料对于<0.18μm的IC，或在将来的IC中用作导体时特别有用。

公开(公告)号：US5008361A

公开(公告)日：1991-04-16

申请号：US459498

申请日：1990-01-02

申请人： Chung J. Lee

发明人： Chung J. Lee

IPC分类号： C08G73/10 ,  C08G77/14 ,  C08G77/22 ,  C08G77/26 ,  C08G77/28 ,  C08G77/42 ,  C08G77/455 ,  C09J183/00 ,  C09J183/10

CPC分类号： C08G77/455 ,  C08G73/106

摘要： Novel crystalline polyimidesiloxanes are prepared by reacting BTDA, and a siloxane monomer with a diamine selected from bis-4(4-aminophenoxy) phenyl sulfone and 2,2-bis-4(4-aminophenoxy) phenyl propane. The products have low water absorption.

公开(公告)号：US4956437A

公开(公告)日：1990-09-11

申请号：US205412

申请日：1988-06-10

申请人： Chung J. Lee

发明人： Chung J. Lee

IPC分类号： C08F2/46 ,  C08G73/10 ,  C08G77/455

CPC分类号： C08G73/106 ,  C08G77/455

摘要： Substantially fully imidized polyimidesiloxanes which are based on a sulfurdiphthalic anhydride are soluble in diglyme which gives them particular utility in the micro-electronics industry. The polymers are prepared from the dianhydride, a difunctional siloxane monomer and an organic diamine. Diamines can be used to provide an asymmetrical structure in the polyimidesiloxane polymer chain. The polyimidesiloxane can be prepared with functional groups which render them directly curable. The polyimidesiloxanes can also be prepared with functional groups which when reacted with an unsaturated compound renders the polymers curable. The products of the invention can be used in the form of solutions in the micro-electronic industry. The polymers can also be used in wire and cable coating and to prepare films, fibers, and molded and extruded articles.

摘要翻译： 基于硫二邻苯二甲酸酐的基本上完全酰亚胺化的聚酰亚胺硅氧烷可溶于二甘醇二甲醚，这在微电子工业中具有特殊的用途。 聚合物由二酸酐，双官能硅氧烷单体和有机二胺制备。 二胺可用于在聚酰亚胺硅氧烷聚合物链中提供不对称结构。 聚酰亚胺硅氧烷可以用使它们直接固化的官能团来制备。 聚酰亚胺硅氧烷也可以用与不饱和化合物反应的官能团制备，使聚合物可固化。 本发明的产品可以以微电子工业中的解决方案的形式使用。 聚合物也可以用于电线和电缆涂层中并制备膜，纤维和模制和挤出制品。

公开(公告)号：US4586997A

公开(公告)日：1986-05-06

申请号：US662930

申请日：1984-10-19

申请人： Chung J. Lee

发明人： Chung J. Lee

IPC分类号： C08L79/08 ,  C08F2/48 ,  C08G73/00 ,  C08G73/10 ,  C08G77/00 ,  C08G77/42 ,  C08G77/455 ,  C08F2/46 ,  B05D3/02 ,  C08G77/04

CPC分类号： C08G73/106 ,  C08G77/455

摘要： There is provided a siloxane-imide copolymer composition having at least one polymeric block with a low glass transition temperature and at least one polymeric block with a high glass transition temperature. Preferred compositions have the general formula ##STR1##

公开(公告)号：US4487894A

公开(公告)日：1984-12-11

申请号：US420568

申请日：1982-09-20

申请人： Chung J. Lee

发明人： Chung J. Lee

IPC分类号： C08G59/40 ,  C08G59/42 ,  C08L63/00

CPC分类号： C08G59/423 ,  C08G59/4042 ,  C08L63/00

摘要： The resins described herein are polyimide-epoxy thermoset resins prepared by reacting a polyepoxide in two steps, first with a solution of a polyimide dianhydride and subsequently with a polyimide diamine, there being enough polyepoxide added initially to react completely with all the anhydride groups and preferably enough polyepoxide added initially to react with both the anhydride and amide groups. "Polyimide dianhydride" is an anhydride-terminated polyimide and "polyimide diamine" is an amine-terminated polyimide as represented by the respective formulas: ##STR1## and ##STR2## wherein Ar', Ar and n are as defined hereinafter. For use in the present compositions, the polyimide dianhydride has an anhydride activity of at least 0.17 as defined herein, and the ratio of epoxy equivalent to anhydride plus amine equivalents is at least 1/1. By employing a two step reaction scheme, the process offers a more tractable polyimide-epoxy intermediate resin that can be processed into void-free products with superior mechanical properties than polyimide-epoxy thermosets shown in the prior art.

摘要翻译： 本文所述的树脂是通过两步反应多环氧化物制备的聚酰亚胺 - 环氧热固性树脂，首先与聚酰亚胺二酐的溶液和随后与聚酰亚胺二胺反应，其中最初加入足够的聚环氧化物以完全与所有酸酐基反应， 最初添加足够的多环氧化物与酸酐和酰胺基团反应。 “聚酰亚胺二酐”是以酸酐封端的聚酰亚胺，“聚酰亚胺二胺”是由下式表示的胺封端的聚酰亚胺：其中Ar'，Ar和n如下文所定义。 为了用于本发明的组合物中，聚酰亚胺二酐的酸酐活性为本文定义的至少0.17，环氧当量与酸酐加胺当量的比率为至少1/1。 通过采用两步反应方案，该方法提供了更易处理的聚酰亚胺 - 环氧中间体树脂，其可以加工成具有优于现有技术中所示的聚酰亚胺 - 环氧热固性塑料的优异机械性能的无空隙产品。

公开(公告)号：US07192645B2

公开(公告)日：2007-03-20

申请号：US10207652

申请日：2002-07-29

申请人： Chung J. Lee ,  Atul Kumar

发明人： Chung J. Lee ,  Atul Kumar

IPC分类号： B32B27/28

CPC分类号： H01L23/5329 ,  B01J19/123 ,  B01J19/1887 ,  B01J2219/00153 ,  B01J2219/00159 ,  B01J2219/0879 ,  B05D1/007 ,  B05D1/60 ,  B05D3/0254 ,  B05D3/061 ,  B05D3/062 ,  B29C71/02 ,  B29C2071/022 ,  B29C2071/025 ,  B29C2071/027 ,  C08G61/02 ,  C08G61/025 ,  C08G2261/3424 ,  C08J5/18 ,  C08J2365/04 ,  C08L65/00 ,  C08L65/04 ,  C23C16/452 ,  F28D17/005 ,  H01L21/0212 ,  H01L21/02203 ,  H01L21/02263 ,  H01L21/312 ,  H01L21/3127 ,  H01L23/53238 ,  H01L2924/0002 ,  Y10T428/31504 ,  Y10T428/3154 ,  Y10T428/31855 ,  H01L2924/00

摘要： Methods and products of Transport co-polymerization (“TCP”) that are useful for preparations of low Dielectric Constant (“ε”) thin films are disclosed. Transport co-polymerization (“TCP”) of reactive intermediates that are generated from a first precursor with a general structural formula (Z)m—Ar—(CX′X″Y)n (VI) with a second reactive intermediate that is generated from a cage compound (e.g. Fullerenes, Methylsilsesquioxane, Hydrosilsesquioxane, and Adamantanyl) or a cyclic-compounds (e.g. Cyclo-Siloxanes and 2,2-Paracyclophanes) results in co-polymer films that are useful for making porous low ε (≦2.0) thin films. The porous thin films of this invention consist of nano-pores with uniform pore distribution thus retain high rigidity thus are suitable for manufacturing of future ICs using copper as conductor. Preparation methods and stabilization processes for low k co-polymers that consist of sp2C—Z and HC-sp3Cα—X bonds are also revealed. A preparation method is achieved by controlling the substrate temperature and feed rate of the major precursors. One stabilization process includes a post annealing of as-deposited co-polymer films under the presence of hydrogen under high temperatures. The reductive annealing of these films is conducted at temperatures from −20° C. to −50° C. to +20° C. to +50° C. of their Reversible Crystal Transformation (“CRT”) temperatures, then quenching the resulting films to −20° C. to −50° C. below their “CRT” temperatures. The reductive annealing is conducted before the as-deposited film was removed from a deposition system and still under the vacuum. “Re-stabilization” processes of co-polymer surfaces that are exposed to reactive plasma etching are also disclosed; thus, further coating by barrier metal, cap layer or etch-stop layer can be safely applied.