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公开(公告)号：US20100218814A1
公开(公告)日：2010-09-02
申请号：US12556335
申请日：2009-09-09
IPC分类号： H01L31/0216 , H01L31/18 , H01L21/3205 , H01L21/31
CPC分类号： H01L31/0749 , H01L31/0322 , Y02E10/541
摘要： A method of reducing the loss of elements of a photovoltaic thin film structure during an annealing process, includes depositing a thin film on a substrate, wherein the thin film includes a single chemical element or a chemical compound, coating the thin film with a protective layer to form a coated thin film structure, wherein the protective layer prevents part of the single chemical element or part of the chemical compound from escaping during an annealing process, and annealing the coated thin film structure to form a coated photovoltaic thin film structure, wherein the coated photovoltaic thin film retains the part of the single chemical element or the part of the chemical compound that is prevented from escaping during the annealing by the protective layer.
摘要翻译： 一种在退火工艺中减少光伏薄膜结构元件损耗的方法，包括在衬底上沉积薄膜，其中薄膜包括单一化学元素或化合物，用保护层涂覆薄膜 以形成涂覆的薄膜结构，其中所述保护层防止在退火过程期间所述单一化学元素或所述化学化合物的一部分的部分逸出，并且使所述涂覆的薄膜结构退火以形成涂覆的光伏薄膜结构，其中 涂覆的光伏薄膜保留在保护层退火期间防止单一化学元素或化学化合物部分逸出的部分。
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公开(公告)号：US20130183553A1
公开(公告)日：2013-07-18
申请号：US13349255
申请日：2012-01-12
申请人： Hariklia Deligianni , Harold J. Hovel , Fei Liu
发明人： Hariklia Deligianni , Harold J. Hovel , Fei Liu
CPC分类号： H01M2/204 , H01G11/16 , H01M2/348 , H01M10/0436 , H01M10/052 , H01M10/0562 , H01M10/058 , H01M2200/103 , Y10T29/49108 , Y10T29/49115
摘要： A useful lifetime of an energy storage device can be extended by providing a series connection of a battery cell and an self-programming fuse. A plurality of series connections of a battery cell and an self-programming fuse can then be connected in a parallel connection to expand the energy storage capacity of the energy storage device. Each self-programming fuse can be a strip of a metal semiconductor alloy material, which electromigrates when a battery cell is electrically shorted and causes increases in the amount of electrical current therethrough. Thus, each self-programming fuse is a self-programming circuit that opens once the battery cell within the same series connection is shorted.
摘要翻译： 可以通过提供电池单元和自编程保险丝的串联连接来扩展能量存储装置的有用寿命。 然后可以并联连接电池单元和自编程保险丝的多个串联连接以扩大能量存储装置的能量存储容量。 每个自编程保险丝可以是金属半导体合金材料的条带，当电池单元电气短路并导致电流量增加时，电极会电流化。 因此，每个自编程保险丝是一个自编程电路，一旦同一串联连接中的电池单元短路，该自编程电路就会断开。
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公开(公告)号：US08790804B2
公开(公告)日：2014-07-29
申请号：US13349255
申请日：2012-01-12
申请人： Hariklia Deligianni , Harold J. Hovel , Fei Liu
发明人： Hariklia Deligianni , Harold J. Hovel , Fei Liu
CPC分类号： H01M2/204 , H01G11/16 , H01M2/348 , H01M10/0436 , H01M10/052 , H01M10/0562 , H01M10/058 , H01M2200/103 , Y10T29/49108 , Y10T29/49115
摘要： A useful lifetime of an energy storage device can be extended by providing a series connection of a battery cell and an self-programming fuse. A plurality of series connections of a battery cell and an self-programming fuse can then be connected in a parallel connection to expand the energy storage capacity of the energy storage device. Each self-programming fuse can be a strip of a metal semiconductor alloy material, which electromigrates when a battery cell is electrically shorted and causes increases in the amount of electrical current therethrough. Thus, each self-programming fuse is a self-programming circuit that opens once the battery cell within the same series connection is shorted.
摘要翻译： 可以通过提供电池单元和自编程保险丝的串联连接来扩展能量存储装置的有用寿命。 然后可以并联连接电池单元和自编程保险丝的多个串联连接以扩大能量存储装置的能量存储容量。 每个自编程保险丝可以是金属半导体合金材料的条带，当电池单元电气短路并导致电流量增加时，电极会电流化。 因此，每个自编程保险丝是一个自编程电路，一旦同一串联连接中的电池单元短路，该自编程电路就会断开。
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公开(公告)号：US07923628B2
公开(公告)日：2011-04-12
申请号：US12556335
申请日：2009-09-09
IPC分类号： H01L31/0216 , H01L31/18 , H01L21/3205 , H01L21/31
CPC分类号： H01L31/0749 , H01L31/0322 , Y02E10/541
摘要： A method of reducing the loss of elements of a photovoltaic thin film structure during an annealing process, includes depositing a thin film on a substrate, wherein the thin film includes a single chemical element or a chemical compound, coating the thin film with a protective layer to form a coated thin film structure, wherein the protective layer prevents part of the single chemical element or part of the chemical compound from escaping during an annealing process, and annealing the coated thin film structure to form a coated photovoltaic thin film structure, wherein the coated photovoltaic thin film retains the part of the single chemical element or the part of the chemical compound that is prevented from escaping during the annealing by the protective layer.
摘要翻译： 一种在退火工艺中减少光伏薄膜结构元件损耗的方法，包括在衬底上沉积薄膜，其中薄膜包括单一化学元素或化合物，用保护层涂覆薄膜 以形成涂覆的薄膜结构，其中所述保护层防止在退火过程期间所述单一化学元素或所述化学化合物的一部分的部分逸出，并且使所述涂覆的薄膜结构退火以形成涂覆的光伏薄膜结构，其中 涂覆的光伏薄膜保留在保护层退火期间防止单一化学元素或化学化合物部分逸出的部分。
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公开(公告)号：US09347147B2
公开(公告)日：2016-05-24
申请号：US13608386
申请日：2012-09-10
IPC分类号： C03C15/00 , C25D17/00 , G01N27/403 , G01N27/404 , C25D17/12 , C25D21/12
CPC分类号： C25D17/007 , C25D17/12 , C25D21/12 , G01N27/403 , G01N27/404
摘要： An electroplating apparatus including a reference electrode to control the potential during an electro-deposition process. The electroplating apparatus may include a bath containing a plating electrolyte and an anode present in a first portion of the bath containing the plating electrolyte. A cathode is present in a second portion of the bath containing the plating electrolyte. A reference electrode is present at a perimeter of the cathode. The electroplating apparatus also includes a control system to bias the cathode and the anode to provide a potential. A measuring system is provided in electrical communication with the reference electrode to measure the potential of the cathode. Methods of using the above described electroplating apparatus are also provided. Structures and method for electroless deposition are also provided.
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公开(公告)号：US08940149B2
公开(公告)日：2015-01-27
申请号：US13604060
申请日：2012-09-05
申请人： Shafaat Ahmed , Hariklia Deligianni
发明人： Shafaat Ahmed , Hariklia Deligianni
摘要： Solutions and processes for electrodepositing gallium or gallium alloys includes a plating bath free of complexing agents including a gallium salt, an indium salt, a combination thereof, and a combination of any of the preceding salts with copper, an acid, and a solvent, wherein the pH of the solution is in a range selected from the group consisting of from about zero to about 2.6 and greater than about 12.6 to about 14. An optional metalloid may be included in the solution.
摘要翻译： 用于电镀镓或镓合金的溶液和方法包括不含络合剂的镀浴，所述配合剂包括镓盐，铟盐，其组合以及任何前述盐与铜，酸和溶剂的组合，其中 溶液的pH在选自约0至约2.6且大于约12.6至约14的范围内。溶液中可包含任选的准金属。
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7.发明申请APPARATUS AND METHOD FOR ELECTROCHEMICAL PROCESSING OF THIN FILMS ON RESISTIVE SUBSTRATES 审中-公开电阻基片薄膜电化学处理装置及方法公开(公告)号：US20120318673A1
公开(公告)日：2012-12-20
申请号：US13596641
申请日：2012-08-28
CPC分类号： C25D5/54 , C25D5/006 , C25D5/02 , C25D7/123 , C25D11/005 , C25D11/024 , C25D17/001 , C25F3/14 , H01L21/28079 , H01L21/2885
摘要： An electrochemical process comprising: providing a 125 mm or larger semiconductor wafer in electrical contact with a conducting surface, wherein at least a portion of the semiconductor wafer is in contact with an electrolytic solution, said semiconductor wafer functioning as a first electrode; providing a second electrode in the electrolytic solution, the first and second electrode connected to opposite ends of an electric power source; and irradiating a surface of the semiconductor wafer with a light source as an electric current is applied across the first and the second electrodes. The invention is also directed to an apparatus including a light source and electrochemical components to conduct the electrochemical process.
摘要翻译： 一种电化学方法，包括：提供与导电表面电接触的125mm或更大的半导体晶片，其中所述半导体晶片的至少一部分与电解液接触，所述半导体晶片用作第一电极; 在所述电解液中提供第二电极，所述第一和第二电极连接到电源的相对端; 并且在第一和第二电极之间施加用作为电流的光源照射半导体晶片的表面。 本发明还涉及一种包括光源和用于进行电化学过程的电化学组分的设备。
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公开(公告)号：US20120055801A1
公开(公告)日：2012-03-08
申请号：US12874504
申请日：2010-09-02
申请人： Shafaat Ahmed , Hariklia Deligianni
发明人： Shafaat Ahmed , Hariklia Deligianni
IPC分类号： C25D3/54
摘要： Solutions and processes for electrodepositing gallium or gallium alloys includes a plating bath free of complexing agents including a gallium salt, an indium salt, a combination thereof, and a combination of any of the preceding salts with copper, an acid, and a solvent, wherein the pH of the solution is in a range selected from the group consisting of from about zero to about 2.6 and greater than about 12.6 to about 14. An optional metalloid may be included in the solution.
摘要翻译： 用于电镀镓或镓合金的溶液和方法包括不含络合剂的镀浴，所述配合剂包括镓盐，铟盐，其组合以及任何前述盐与铜，酸和溶剂的组合，其中 溶液的pH在选自约0至约2.6且大于约12.6至约14的范围内。溶液中可包含任选的准金属。
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公开(公告)号：US20120043814A1
公开(公告)日：2012-02-23
申请号：US12858535
申请日：2010-08-18
申请人： Hariklia Deligianni , Fei Liu
发明人： Hariklia Deligianni , Fei Liu
CPC分类号： H01M10/39 , G06F17/5045 , G06F17/5068 , G06F17/5081 , H01L31/022458 , H01L31/053 , H01L31/068 , H01M10/465 , H01M14/005 , H01M16/00 , H01M16/006 , H02J7/35 , H02S40/38 , Y02E10/547 , Y10T156/10 , Y10T307/50
摘要： An integrated photovoltaic cell and battery device, a method of manufacturing the same and a photovoltaic power system incorporating the integrated photovoltaic cell and battery device. The integrated photovoltaic cell and battery device includes a photovoltaic cell, a battery, and interconnects providing three-dimensional integration of the photovoltaic cell and the battery into an integrated device for capturing and storing solar energy. Also provided is a design structure readable by a machine to simulate, design, or manufacture the above integrated photovoltaic cell and battery device.
摘要翻译： 集成光伏电池和电池装置，其制造方法以及并入有集成光伏电池和电池装置的光伏发电系统。 集成光伏电池和电池装置包括光伏电池，电池和将光伏电池和电池三维集成在一起的用于捕获和存储太阳能的集成装置的互连。 还提供了用于模拟，设计或制造上述集成光伏电池和电池装置的机器可读的设计结构。
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公开(公告)号：US07944006B2
公开(公告)日：2011-05-17
申请号：US12014511
申请日：2008-01-15
申请人： Veeraraghavan S. Basker , Hariklia Deligianni , Rajarao Jammy , Vamsi Krishna Paruchuri , Lubomyr T. Romankiw
发明人： Veeraraghavan S. Basker , Hariklia Deligianni , Rajarao Jammy , Vamsi Krishna Paruchuri , Lubomyr T. Romankiw
IPC分类号： H01L29/78
CPC分类号： C25D3/567 , C25D5/02 , C25D7/12 , H01L21/28079 , H01L21/28088 , H01L21/28176 , H01L29/495 , H01L29/4966 , H01L29/517
摘要： Stabilized metal gate electrode for complementary metal-oxide-semiconductor (“CMOS”) applications and methods of making the stabilized metal gate electrodes are disclosed. Specifically, the metal gate electrodes are stabilized by alloying wherein the alloy comprises a metal selected from the group consisting of Re, Ru, Pt, Rh, Ni, Al and combinations thereof and an element selected from the group consisting of W, V, Ti, Ta and combinations thereof.
摘要翻译： 公开了用于互补金属氧化物半导体（“CMOS”）应用的稳定金属栅极电极和制造稳定的金属栅电极的方法。 具体地说，金属栅电极通过合金化来稳定化，其中合金包括选自Re，Ru，Pt，Rh，Ni，Al及其组合的金属和选自W，V，Ti ，Ta及其组合。
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