公开(公告)号：US6093911A

公开(公告)日：2000-07-25

申请号：US83055

申请日：1998-05-22

申请人： Hiroki Kawada ,  Tomoji Watanabe ,  Nobuo Tsumaki ,  Toshimitsu Miyata

发明人： Hiroki Kawada ,  Tomoji Watanabe ,  Nobuo Tsumaki ,  Toshimitsu Miyata

IPC分类号： H01L21/22 ,  H01L21/00

CPC分类号： H01L21/67115

摘要： A vacuum heating furnace comprises a translucent container for retaining a heated object and a heating light source for heating a heated object retained in the translucent container. The translucent container has on its surface a tapered portion to receive transmitted light totally reflected on the inner surface of the translucent container at an angle smaller than a critical angle.

摘要翻译： 真空加热炉包括用于保持加热物体的半透明容器和用于加热保持在半透明容器中的被加热物体的加热光源。 半透明容器在其表面上具有锥形部分，以小于临界角的角度接收在半透明容器的内表面上全反射的透射光。

公开(公告)号：US06288368B1

公开(公告)日：2001-09-11

申请号：US09547316

申请日：2000-04-11

申请人： Hiroki Kawada ,  Tomoji Watanabe ,  Nobuo Tsumaki ,  Toshimitsu Miyata

发明人： Hiroki Kawada ,  Tomoji Watanabe ,  Nobuo Tsumaki ,  Toshimitsu Miyata

IPC分类号： A21B100

CPC分类号： H01L21/67115

摘要： A vacuum heating furnace comprises a translucent container for retaining a heated object and a heating light source for heating a heated object retained in the translucent container. The translucent container has on its surface a tapered portion to receive transmitted light totally reflected on the inner surface of the translucent container at an angle smaller than a critical angle.

摘要翻译： 真空加热炉包括用于保持加热物体的半透明容器和用于加热保持在半透明容器中的被加热物体的加热光源。 半透明容器在其表面上具有锥形部分，以小于临界角的角度接收在半透明容器的内表面上全反射的透射光。

公开(公告)号：US07485874B2

公开(公告)日：2009-02-03

申请号：US11510277

申请日：2006-08-24

申请人： Seiichi Nakamura ,  Hideki Nishihata ,  Riyuusuke Kasamatsu ,  Kazunori Tsubuku ,  Akira Bando ,  Nobuo Tsumaki ,  Tomoji Watanabe ,  Kazuo Mera ,  Tsuneo Hayashi ,  Yoichi Kurosawa

发明人： Seiichi Nakamura ,  Hideki Nishihata ,  Riyuusuke Kasamatsu ,  Kazunori Tsubuku ,  Akira Bando ,  Nobuo Tsumaki ,  Tomoji Watanabe ,  Kazuo Mera ,  Tsuneo Hayashi ,  Yoichi Kurosawa

IPC分类号： G01N21/00 ,  G01N23/00 ,  G21K5/10 ,  G21K5/08 ,  H01J37/08 ,  H01J37/20

CPC分类号： H01J37/3172 ,  H01J37/20 ,  H01J2237/2007 ,  H01L21/68728 ,  H01L21/68764 ,  H01L21/68771

摘要： This apparatus for manufacturing semiconductor substrates has support disks and holding units holding semiconductor substrates on the support disks. The holding unit has a stopper which is formed of a conductive material and holds the brim of the semiconductor substrate, a stopper holder which supports the stopper at the outer circumferential portion thereof, a retaining member which retains the stopper to the support disk, and a heating unit which heats the stopper.

摘要翻译： 该半导体基板的制造装置具有在支撑盘上保持半导体基板的支撑盘和保持单元。 保持单元具有由导电材料形成并保持半导体衬底的边缘的止动件，在其外圆周部分处支撑止动件的止动器保持器，将止动件保持在支撑盘上的保持构件， 加热装置加热塞子。

公开(公告)号：US20070114458A1

公开(公告)日：2007-05-24

申请号：US11510277

申请日：2006-08-24

申请人： Seiichi Nakamura ,  Hideki Nishihata ,  Riyunsuke Kasamatsu ,  Kazunori Tsubuku ,  Akira Bando ,  Nobuo Tsumaki ,  Tomoji Watanabe ,  Kazuo Mera ,  Tsuneo Hayashi ,  Yoichi Kurosawa

发明人： Seiichi Nakamura ,  Hideki Nishihata ,  Riyunsuke Kasamatsu ,  Kazunori Tsubuku ,  Akira Bando ,  Nobuo Tsumaki ,  Tomoji Watanabe ,  Kazuo Mera ,  Tsuneo Hayashi ,  Yoichi Kurosawa

IPC分类号： H01J37/08

CPC分类号： H01J37/3172 ,  H01J37/20 ,  H01J2237/2007 ,  H01L21/68728 ,  H01L21/68764 ,  H01L21/68771

摘要： This apparatus for manufacturing semiconductor substrates has support disks and holding units holding semiconductor substrates on the support disks. The holding unit has a stopper which is formed of a conductive material and holds the brim of the semiconductor substrate, a stopper holder which supports the stopper at the outer circumferential portion thereof, a retaining member which retains the stopper to the support disk, and a heating unit which heats the stopper.

摘要翻译： 该半导体基板的制造装置具有在支撑盘上保持半导体基板的支撑盘和保持单元。 保持单元具有由导电材料形成并保持半导体衬底的边缘的止动件，在其外圆周部分处支撑止动件的止动器保持器，将止动件保持在支撑盘上的保持构件， 加热装置加热塞子。

公开(公告)号：US06518548B2

公开(公告)日：2003-02-11

申请号：US10084378

申请日：2002-02-28

申请人： Masakazu Sugaya ,  Fumio Murai ,  Yutaka Kaneko ,  Masafumi Kanetomo ,  Shigeki Hirasawa ,  Tomoji Watanabe ,  Tatuharu Yamamoto ,  Katsuhiro Kuroda

发明人： Masakazu Sugaya ,  Fumio Murai ,  Yutaka Kaneko ,  Masafumi Kanetomo ,  Shigeki Hirasawa ,  Tomoji Watanabe ,  Tatuharu Yamamoto ,  Katsuhiro Kuroda

IPC分类号： H05B368

CPC分类号： H01L21/67103 ,  H01L21/67248

摘要： So as to provide a substrate temperature control system capable of unifying the temperature of the substrate and capable of shortening the temperature elevation time (temperature lowering time), the substrate temperature control system is equipped with a temperature control plate (heating or cooling plate) having a plurality of projections on the surface and serving to set the temperature of the substrate, and a chuck mechanism to fix the substrate in contact to a plurality of the projections by chucking the substrate toward the direction of the temperature control plate.

公开(公告)号：US5001327A

公开(公告)日：1991-03-19

申请号：US242175

申请日：1988-09-09

申请人： Shigeki Hirasawa ,  Takuji Torii ,  Tomoji Watanabe ,  Toshihiro Komatsu ,  Kazuo Honma ,  Akihiko Sakai ,  Tetsuya Takagaki ,  Toshiyuki Uchino ,  Hiroto Nagazomo

发明人： Shigeki Hirasawa ,  Takuji Torii ,  Tomoji Watanabe ,  Toshihiro Komatsu ,  Kazuo Honma ,  Akihiko Sakai ,  Tetsuya Takagaki ,  Toshiyuki Uchino ,  Hiroto Nagazomo

IPC分类号： H01L21/00 ,  H01L21/673 ,  H01L21/677 ,  H01L21/687

CPC分类号： H01L21/67751 ,  H01L21/67109 ,  H01L21/67313 ,  Y10S414/135 ,  Y10S414/138

摘要： An apparatus for containing semiconductor wafers and performing heat treatment thereon. Heaters disposed in a high temperature furnace form at least one heating space therein. An insertion and retrieval aperture is disposed at the lower portion of each heating space for allowing passage of wafers therethrough. Each of the heating spaces is adapted to receive one or two wafers and to provide simultaneous and uniform heat treatment on the wafers.

公开(公告)号：US06656838B2

公开(公告)日：2003-12-02

申请号：US10150950

申请日：2002-05-21

申请人： Tomoji Watanabe ,  Akiko Kagatsume ,  Tadanori Yoshida

发明人： Tomoji Watanabe ,  Akiko Kagatsume ,  Tadanori Yoshida

IPC分类号： H01L2144

CPC分类号： C23C16/45565 ,  C23C16/45521 ,  C23C16/45557 ,  C23C16/45572 ,  C23C16/4581 ,  C23C16/46 ,  C30B25/02 ,  C30B29/06 ,  H01L21/28556 ,  H01L21/76877

摘要： To provide a process for producing a semiconductor, which can form a CVD film at a high film-forming rate with a good step coverage, good uniformities of film forming rate and sheet resistance in the in-plane region of a wafer and a good reproducibility at every wafers, and an apparatus for treating a semiconductor for the process. In a treating chamber kept under pressure of 1,000-50,000 Pa, a wafer is placed on a susceptor, and a film is deposited on the wafer by heating the wafer at 500° C. or higher by a plate-shaped heater through the susceptor, while supplying a feed gas into the treating chamber at 500-50,000 sccm through gas injection nozzles provided near the center of a shower plate provided approximately in parallel with the wafer at a distance of 1-20 mm from the wafer and kept at a temperature of 200° C. or lower.

公开(公告)号：US06462411B1

公开(公告)日：2002-10-08

申请号：US09205299

申请日：1998-12-04

申请人： Tomoji Watanabe ,  Nobuyuki Mise ,  Toshiyuki Uchino ,  Norio Suzuki ,  Yoshihiko Sakurai ,  Toshiya Uenishi ,  Yohsuke Inoue ,  Yasuhiro Inokuchi ,  Fumihide Ikeda

发明人： Tomoji Watanabe ,  Nobuyuki Mise ,  Toshiyuki Uchino ,  Norio Suzuki ,  Yoshihiko Sakurai ,  Toshiya Uenishi ,  Yohsuke Inoue ,  Yasuhiro Inokuchi ,  Fumihide Ikeda

IPC分类号： H01L2334

CPC分类号： H01L21/67748 ,  H01L21/67109 ,  H01L21/68735 ,  H01L21/6875 ,  H01L21/68785 ,  Y10T29/41

摘要： A semiconductor wafer processing apparatus comprises a reaction furnace capable of heating inside thereof, a wafer mount for mounting a semiconductor wafer thereon and a transfer device. The wafermount includes an opening which is greater than the semiconductor wafer and which has a circle shape or a shape substantially similar to an outer periphery of the semiconductor wafer, and includes a wafer supporting portion projecting inwardly of the opening for supporting the semiconductor wafer. The transfer device is capable of holding the wafer mount outside the semiconductor wafer as viewed from a vertical direction, and transferring the wafer mount carrying the semiconductor wafer thereon substantially horizontally into and/or out from the reaction furnace.

摘要翻译： 半导体晶片处理装置包括能够在其内部加热的反应炉，用于将半导体晶片安装在其上的晶片载体和转印装置。 所述瓦台车包括比所述半导体晶片大的开口部，该开口部具有与所述半导体晶片的外周大致相同的圆形或形状，并且具有向所述开口的内侧突出以支撑所述半导体晶片的晶片支撑部。 传送装置能够从垂直方向观察时将晶片安装体保持在半导体晶片外部，并将承载半导体晶片的晶片载体基本水平地转移到反应炉内和/或从反应炉出来。

公开(公告)号：US5235399A

公开(公告)日：1993-08-10

申请号：US719945

申请日：1991-06-24

申请人： Tatehito Usui ,  Tomoji Watanabe ,  Junichi Kobayashi ,  Takehiko Ooshima ,  Shunji Sasabe

发明人： Tatehito Usui ,  Tomoji Watanabe ,  Junichi Kobayashi ,  Takehiko Ooshima ,  Shunji Sasabe

IPC分类号： G01J5/10 ,  G01J5/00 ,  G01J5/06 ,  G01J5/60 ,  H05H1/00

CPC分类号： G01J5/0014 ,  G01J5/0018 ,  G01J5/06 ,  G01J5/08 ,  G01J5/0806 ,  G01J5/0825 ,  G01J5/602

摘要： An apparatus for measuring the temperature of an object placed in a plasma by utilizing radiation includes measuring means for measuring the intensity of radiation from the object and the intensity of plasma light in different directions at the same time. The measuring means includes a first lens for receiving the radiation from the object and the plasma light, a second lens for converting the output beam of the first lens into parallel light rays, a third lens for focusing the parallel light rays, and an interference filter disposed rotatably between the second lens and the third lens.

摘要翻译： 用于通过利用辐射来测量放置在等离子体中的物体的温度的装置包括用于同时测量来自物体的辐射强度和等离子体光的强度的测量装置。 测量装置包括用于接收来自物体和等离子体光的辐射的第一透镜，用于将第一透镜的输出光束转换为平行光线的第二透镜，用于聚焦平行光线的第三透镜和用于聚焦平行光线的干涉滤光器 可旋转地设置在第二透镜和第三透镜之间。

公开(公告)号：US06403479B1

公开(公告)日：2002-06-11

申请号：US09787242

申请日：2001-03-16

申请人： Tomoji Watanabe ,  Akiko Kagatsume ,  Tadanori Yoshida

发明人： Tomoji Watanabe ,  Akiko Kagatsume ,  Tadanori Yoshida

IPC分类号： H01L2144

CPC分类号： C23C16/45565 ,  C23C16/45521 ,  C23C16/45572 ,  C23C16/4581 ,  C23C16/4583 ,  C23C16/46 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262

摘要： To provide a process for producing a semiconductor, which can form a CVD film at a high film-forming rate with a good step coverage, good uniformities of film forming rate and sheet resistance in the in-plane region of a wafer and a good reproducibility at every wafers, and an apparatus for treating a semiconductor for the process. In a treating chamber kept under pressure of 1,000-50,000 Pa, a wafer is placed on a susceptor, and a film is deposited on the wafer by heating the wafer at 500° C. or higher by a plate-shaped heater through the susceptor, while supplying a feed gas into the treating chamber at 500-50,000 sccm through gas injection nozzles provided near the center of a shower plate provided approximately in parallel with the wafer at a distance of 1-20 mm from the wafer and kept at a temperature of 200° C. or lower.

摘要翻译： 为了提供一种制造半导体的方法，其能够以高的成膜速度以良好的阶梯覆盖率形成CVD膜，在晶片的面内区域具有良好的成膜速度和薄层电阻的均匀性以及良好的再现性 在每个晶片处，以及用于处理该半导体的装置。 在保持在1000-50,000Pa的压力下的处理室中，将晶片放置在基座上，通过板式加热器通过基座加热500℃或更高的晶片，将膜沉积在晶片上， 同时通过设置在与晶片大致平行于淋洗板的中心附近的气体注射喷嘴以500-50,000sccm供给进料气体，距离晶片为距离晶片1-20mm的距离，并保持在 200℃以下。