Surface emitting laser element, surface emitting laser array, optical scanning apparatus, image forming apparatus, and optical communication system
    1.
    发明申请
    Surface emitting laser element, surface emitting laser array, optical scanning apparatus, image forming apparatus, and optical communication system 有权
    表面发射激光元件,表面发射激光器阵列,光学扫描装置,成像装置和光通信系统

    公开(公告)号:US20080056321A1

    公开(公告)日:2008-03-06

    申请号:US11895832

    申请日:2007-08-27

    IPC分类号: H01S5/18 B41J27/00

    摘要: A vertical cavity surface emitting laser element is disclosed that includes a substrate, a first semiconductor multilayer reflector including plural pairs of layers having differing refractive indexes and thermal resistances, a resonator region including an active layer, and a second semiconductor multilayer reflector including plural pairs of layers having differing refractive indexes and thermal resistances. At least one pair of layers of the first semiconductor multilayer reflector and/or the second semiconductor multilayer reflector includes a first layer with a lower thermal resistance that has an optical thickness greater than ¼ of the oscillation wavelength and a second layer with a higher thermal resistance that has an optical thickness less than ¼ of the oscillation wavelength. The sum of the optical thickness of the first layer and the optical thickness of the second layer is equal to m/4 times the oscillation wavelength (m: even number≧2).

    摘要翻译: 公开了一种垂直腔表面发射激光器元件,其包括衬底,包括具有不同折射率和热阻的多对层的第一半导体多层反射器,包括有源层的谐振器区域和包括多个对的第二半导体多层反射器 具有不同折射率和热阻的层。 第一半导体多层反射器和/或第二半导体多层反射器的至少一对层包括具有大于振荡波长的1/4的光学厚度的具有较低热阻的第一层和具有较高热阻的第二层 其光学厚度小于振荡波长的1/4。 第一层的光学厚度和第二层的光学厚度之和等于振荡波长的m / 4倍(m:偶数> = 2)。

    Surface emitting laser element, surface emitting laser array, optical scanning device, and image forming apparatus
    9.
    发明授权
    Surface emitting laser element, surface emitting laser array, optical scanning device, and image forming apparatus 有权
    表面发射激光元件,表面发射激光器阵列,光学扫描装置和成像装置

    公开(公告)号:US08035676B2

    公开(公告)日:2011-10-11

    申请号:US12432872

    申请日:2009-04-30

    IPC分类号: B41J2/45 H01S5/00

    摘要: In a surface emitting laser element, on a substrate whose normal direction of a principal surface is inclined, a resonator structural body including an active layer, and a lower semiconductor DBR and an upper semiconductor DBR sandwiching the resonator structural body are stacked. A shape of a current passing through region in an oxide confinement structure of the upper semiconductor DBR is symmetrical to an axis passing through a center of the current passing through region parallel to an X axis and symmetrical to an axis passing through the center of the current passing through region parallel to a Y axis, and a length of the current passing through region is greater in the Y axis direction than in the X axis direction. A thickness of an oxidized layer surrounding the current passing through region is greater in the −Y direction than in the +X and −X directions.

    摘要翻译: 在表面发射激光元件中,在主表面的法线方向倾斜的基板上堆叠包括有源层的谐振器结构体和夹持谐振器结构体的下半导体DBR和上半导体DBR。 上半导体DBR的氧化物限制结构中的电流通过区域的形状与通过平行于X轴的电流通过区域的中心的轴对称,并且与通过电流的中心的轴对称 通过区域与Y轴平行,并且电流通过区域的长度在Y轴方向上比在X轴方向上大。 围绕电流通过区域的氧化层的厚度在-Y方向上大于在+ X和-X方向上的厚度。