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    Plasma treatment of low-K surface to improve barrier deposition
    1.
    发明授权
    Plasma treatment of low-K surface to improve barrier deposition 有权
    等离子体处理低K面以改善屏障沉积

    公开(公告)号：US09245793B2

    公开(公告)日：2016-01-26

    申请号：US14135182

    申请日：2013-12-19

    Applicant: Intermolecular, Inc.

    Inventor： Ratsamee Limdulpaiboon ,  Frank Greer ,  Chi-I Lang ,  J. Watanabe ,  Wenxian Zhu

    IPC: H01L21/31 ,  H01L21/768 ,  H01L21/3105 ,  H01J37/32

    CPC classification number: H01L21/76841 ,  H01J37/32357 ,  H01J37/32449 ,  H01L21/3105 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76843

    Abstract: Methods and apparatus for processing using a remote plasma source are disclosed. The apparatus includes an outer chamber enclosing a substrate support, a remote plasma source, and a showerhead. A substrate heater can be mounted in the substrate support. A transport system moves the substrate support and is capable of positioning the substrate. The plasma system may be used to generate activated species. The activated species can be used to treat the surfaces of low-k and/or ultra low-k dielectric materials to facilitate improved deposition of diffusion barrier materials.

    Abstract translation: 公开了使用远程等离子体源的处理方法和装置。 该装置包括封闭衬底支撑件，远程等离子体源和喷头的外室。 基板加热器可以安装在基板支撑件中。 运输系统移动基板支撑件并且能够定位基板。 等离子体系统可用于产生活化物质。 活化物质可用于处理低k和/或超低k介电材料的表面，以促进扩散阻挡材料的改进沉积。

    Methods for forming resistive switching memory elements
    2.
    发明授权
    Methods for forming resistive switching memory elements 有权
    形成电阻式开关存储元件的方法

    公开(公告)号：US09178145B2

    公开(公告)日：2015-11-03

    申请号：US14264475

    申请日：2014-04-29

    Applicant: Intermolecular Inc.

    Inventor： Nitin Kumar ,  Tony P. Chiang ,  Chi-I Lang ,  Zhi-Wen Wen Sun ,  Jinhong Tong

    IPC: H01L45/00 ,  H01L27/24

    CPC classification number: H01L45/145 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/146 ,  H01L45/1633

    Abstract: Resistive switching memory elements are provided that may contain electroless metal electrodes and metal oxides formed from electroless metal. The resistive switching memory elements may exhibit bistability and may be used in high-density multi-layer memory integrated circuits. Electroless conductive materials such as nickel-based materials may be selectively deposited on a conductor on a silicon wafer or other suitable substrate. The electroless conductive materials can be oxidized to form a metal oxide for a resistive switching memory element. Multiple layers of conductive materials can be deposited each of which has a different oxidation rate. The differential oxidization rates of the conductive layers can be exploited to ensure that metal oxide layers of desired thicknesses are formed during fabrication.

    Abstract translation: 提供电阻式开关存储器元件，其可以包含由无电金属形成的化学金属电极和金属氧化物。 电阻式开关存储器元件可以表现出双稳态，并且可以用于高密度多层存储器集成电路中。 诸如镍基材料的无电导电材料可以选择性地沉积在硅晶片或其它合适的衬底上的导体上。 无电导电材料可以被氧化以形成用于电阻式开关存储元件的金属氧化物。 可以沉积多层导电材料，每层具有不同的氧化速率。 可以利用导电层的差异氧化速率来确保在制造期间形成所需厚度的金属氧化物层。

    Method and system of improved uniformity testing
    4.
    发明授权
    Method and system of improved uniformity testing 有权
    改进均匀性测试的方法和系统

    公开(公告)号：US09105563B2

    公开(公告)日：2015-08-11

    申请号：US13713421

    申请日：2012-12-13

    Applicant: Intermolecular, Inc.

    Inventor： Charlene Chen ,  Tony P. Chiang ,  Chi-I Lang ,  Yun Wang

    IPC: G01N21/59 ,  H01L21/66 ,  H01L29/16 ,  H01L21/02

    CPC classification number: H01L22/20 ,  G01N21/59 ,  H01L21/02491 ,  H01L21/02527 ,  H01L21/0262 ,  H01L22/12 ,  H01L29/1606

    Abstract: A method and system includes a first substrate and a second substrate, each substrate comprising a predetermined baseline transmittance value at a predetermine wavelength of light, processing regions on the first substrate by combinatorially varying at least one of materials, process conditions, unit processes, and process sequences associated with the graphene production, performing a first characterization test on the processed regions on the first substrate to generate first results, processing regions on a second substrate in a combinatorial manner by varying at least one of materials, process conditions, unit processes, and process sequences associated with the graphene production based on the first results of the first characterization test, performing a second characterization test on the processed regions on the second substrate to generate second results, and determining whether at least one of the first substrate and the second substrate meet a predetermined quality threshold based on the second results.

    Abstract translation: 一种方法和系统包括第一衬底和第二衬底，每个衬底在光的预定波长处包括预定的基线透射率值，第一衬底上的处理区域通过组合地改变材料，工艺条件，单元工艺中的至少一个和 与所述石墨烯生产相关联的工艺序列，对所述第一衬底上的所述经处理区域执行第一表征测试以产生第一结果，通过改变材料，工艺条件，单位过程中的至少一种以组合方式处理第二衬底上的区域， 以及基于第一表征测试的第一结果与石墨烯生产相关联的处理顺序，对第二衬底上的经处理区域执行第二表征测试以产生第二结果，以及确定第一衬底和第二衬底中的至少一个 基板满足预定的质量阈值 基于第二个结果。

    Methods and Apparatus for Combinatorial PECVD or PEALD
    5.
    发明申请
    Methods and Apparatus for Combinatorial PECVD or PEALD 审中-公开
    组合PECVD或PEALD的方法和装置

    公开(公告)号：US20150184298A1

    公开(公告)日：2015-07-02

    申请号：US14660772

    申请日：2015-03-17

    Applicant: Intermolecular, Inc.

    Inventor： ShouQian Shao ,  Chi-I Lang ,  Jingang Su

    IPC: C23C16/455 ,  C23C16/04 ,  C23C16/458 ,  C23C16/52

    CPC classification number: C23C16/45544 ,  C23C16/04 ,  C23C16/042 ,  C23C16/45536 ,  C23C16/45565 ,  C23C16/4584 ,  C23C16/4586 ,  C23C16/50 ,  C23C16/52

    Abstract: Apparatus and methods for depositing materials on a plurality of site-isolated regions on a substrate are provided. The deposition uses PECVD or PEALD. The apparatus include an inner chamber with an aperture and barrier that can be used to isolate the regions during the deposition and prevent the remaining portions of the substrate from being exposed to the deposition process. The process parameters for the deposition process are varied among the site-isolate regions in a combinatorial manner.

    Abstract translation: 提供了用于在衬底上的多个位置隔离区域上沉积材料的设备和方法。 沉积使用PECVD或PEALD。 该装置包括具有开口和屏障的内室，其可以用于在沉积期间隔离区域，并且防止基板的剩余部分暴露于沉积工艺。 用于沉积过程的工艺参数以组合方式在位点隔离区域之间变化。

    Plasma Treatment of Low-K Surface to Improve Barrier Deposition
    6.
    发明申请
    Plasma Treatment of Low-K Surface to Improve Barrier Deposition 有权
    低K表面的等离子体处理提高了阻挡层沉积

    公开(公告)号：US20150179509A1

    公开(公告)日：2015-06-25

    申请号：US14135182

    申请日：2013-12-19

    Applicant: Intermolecular, Inc.

    Inventor： Ratsamee Limdulpaiboon ,  Frank Greer ,  Chi-I Lang ,  J. Watanabe ,  Wenxian Zhu

    IPC: H01L21/768 ,  H01L21/02

    CPC classification number: H01L21/76841 ,  H01J37/32357 ,  H01J37/32449 ,  H01L21/3105 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76843

    Abstract: Methods and apparatus for processing using a remote plasma source are disclosed. The apparatus includes an outer chamber enclosing a substrate support, a remote plasma source, and a showerhead. A substrate heater can be mounted in the substrate support. A transport system moves the substrate support and is capable of positioning the substrate. The plasma system may be used to generate activated species. The activated species can be used to treat the surfaces of low-k and/or ultra low-k dielectric materials to facilitate improved deposition of diffusion barrier materials.

    Abstract translation: 公开了使用远程等离子体源的处理方法和装置。 该装置包括封闭衬底支撑件，远程等离子体源和喷头的外室。 基板加热器可以安装在基板支撑件中。 运输系统移动基板支撑件并且能够定位基板。 等离子体系统可用于产生活化物质。 活化物质可用于处理低k和/或超低k介电材料的表面，以促进扩散阻挡材料的改进沉积。

    Methods and apparatus for combinatorial PECVD or PEALD
    8.
    发明授权
    Methods and apparatus for combinatorial PECVD or PEALD 有权
    组合PECVD或PEALD的方法和装置

    公开(公告)号：US09023438B2

    公开(公告)日：2015-05-05

    申请号：US13716829

    申请日：2012-12-17

    Applicant: Intermolecular, Inc.

    Inventor： ShouQian Shao ,  Chi-I Lang ,  Jingang Su

    IPC: H05H1/24 ,  C23C16/04 ,  C23C16/455 ,  C23C16/50 ,  C23C16/52

    CPC classification number: C23C16/45544 ,  C23C16/04 ,  C23C16/042 ,  C23C16/45536 ,  C23C16/45565 ,  C23C16/4584 ,  C23C16/4586 ,  C23C16/50 ,  C23C16/52

    Abstract: Apparatus and methods for depositing materials on a plurality of site-isolated regions on a substrate are provided. The deposition uses PECVD or PEALD. The apparatus include an inner chamber with an aperture and barrier that can be used to isolate the regions during the deposition and prevent the remaining portions of the substrate from being exposed to the deposition process. The process parameters for the deposition process are varied among the site-isolate regions in a combinatorial manner.

    Abstract translation: 提供了用于在衬底上的多个位置隔离区域上沉积材料的设备和方法。 沉积使用PECVD或PEALD。 该装置包括具有开口和屏障的内室，其可以用于在沉积期间隔离区域，并且防止基板的剩余部分暴露于沉积工艺。 用于沉积过程的工艺参数以组合方式在位点隔离区域之间变化。

    Screening of Surface Passivation Processes for Germanium Channels
    10.
    发明申请
    Screening of Surface Passivation Processes for Germanium Channels 审中-公开
    锗通道表面钝化过程的筛选

    公开(公告)号：US20140315331A1

    公开(公告)日：2014-10-23

    申请号：US14205078

    申请日：2014-03-11

    Applicant: Intermolecular, Inc.

    Inventor： Sandip Niyogi ,  Shuogang Huang ,  Chi-I Lang

    IPC: H01L21/66 ,  H01L21/306

    CPC classification number: H01L22/12 ,  H01L21/02052 ,  H01L21/306 ,  H01L21/30604 ,  H01L21/67051 ,  H01L21/6708 ,  H01L22/20 ,  H01L22/26

    Abstract: Candidate wet processes for native oxide removal from, and passivation of, germanium surfaces can be screened by high-productivity combinatorial variation of different process parameters on different site-isolated regions of a single substrate. Variable process parameters include the choice of hydrohalic acid used to remove the native oxide, the concentration of the acid in the solution, the exposure time, and the use of an optional sulfur passivation step. Measurements to compare the results of the process variations include attenuated total reflectance Fourier transform infrared spectroscopy (ATR-FTIR), contact angle, atomic force microscopy (AFM), scanning electron microscopy (SEM), and X-ray fluorescence (XRF). A sample screening experiment indicated somewhat less native oxide regrowth using HCl or HBr without sulfur passivation, compared to using HF with sulfur passivation.

    Abstract translation: 可以通过在单个衬底的不同位置分离区域上的不同工艺参数的高生产率组合变化来筛选锗表面的自然氧化物去除和钝化的候选湿法。 可变工艺参数包括用于去除天然氧化物的氢卤酸的选择，溶液中酸的浓度，暴露时间以及使用任选的硫钝化步骤。 用于比较过程变化结果的测量包括衰减全反射傅立叶变换红外光谱（ATR-FTIR），接触角，原子力显微镜（AFM），扫描电子显微镜（SEM）和X射线荧光（XRF）。 与使用具有硫钝化的HF相比，样品筛选实验表明使用没有硫钝化的HCl或HBr较少的天然氧化物再生长。

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