Method for fabricating a carrier-less silicon interposer

    公开(公告)号:US10181411B2

    公开(公告)日:2019-01-15

    申请号:US14950180

    申请日:2015-11-24

    Abstract: An insulating second element is provided and overlies a surface of a first element which consists essentially of a material having a CTE of less than 10 ppm/° C. and has a first thickness in a first direction normal to the surface. Openings extend in the first direction through the second element. The first element is abraded to produce a thinned first element having a second thickness less than the first thickness. Conductive elements are formed at a first side of the interposer coincident with or adjacent to a surface of the thinned first element remote from the second element. A conductive structure extends through the openings in the second element, wherein the conductive elements are electrically connected with terminals of the interposer through the conductive structure, and the terminals are disposed at a second side of the interposer opposite from the first side.

    CARRIER-LESS SILICON INTERPOSER
    4.
    发明申请
    CARRIER-LESS SILICON INTERPOSER 审中-公开
    无载体硅介质

    公开(公告)号:US20160079090A1

    公开(公告)日:2016-03-17

    申请号:US14950180

    申请日:2015-11-24

    Abstract: An interposer has conductive elements at a first side and terminals at a second side opposite therefrom, for connecting with a microelectronic element and a second component, respectively. The component includes a first element having a thermal expansion coefficient less than 10 ppm/° C., and an insulating second element, with a plurality of openings extending from the second side through the second element towards the first element. A conductive structure extending through the openings in the second element and through the first element electrically connects the terminals with the conductive elements.

    Abstract translation: 插入件在第一侧具有导电元件,在与其相对的第二侧具有端子,用于分别与微电子元件和第二元件连接。 该组件包括具有小于10ppm /℃的热膨胀系数的第一元件和绝缘的第二元件,多个开口从第二侧延伸穿过第二元件朝向第一元件。 延伸穿过第二元件中的开口并通过第一元件的导电结构将端子与导电元件电连接。

Patent Agency Ranking