公开(公告)号：US08524094B2

公开(公告)日：2013-09-03

申请号：US12219117

申请日：2008-07-16

申请人： Isao Nakatani ,  Kimiko Mashimo ,  Naoko Matsui

发明人： Isao Nakatani ,  Kimiko Mashimo ,  Naoko Matsui

IPC分类号： B44C1/22 ,  C23F1/00

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  C23F4/00 ,  G11B5/3116 ,  G11B5/3163 ,  G11B5/3909 ,  H01F41/308 ,  H01L21/0332 ,  H01L21/32136 ,  H01L21/32139 ,  H01L43/12 ,  Y10T29/49021 ,  Y10T29/49052

摘要： The object of the present invention is to provide a masking material for dry etching, which is suitable for fine processing of a magnetic film as thin as a few nm such as NiFe or CoFe constituting a TMR film and capable of simplifying the process for producing a TMR element and reducing production costs related to facilities and materials. This object was solved by a masking material for dry etching of a magnetic material by using a mixed gas of carbon monoxide and a nitrogenous compound as etching gas, which comprises a metal (tantalum, tungsten, zirconium or hafnium) with a melting or boiling point increasing upon conversion thereof into a nitride or carbide.

公开(公告)号：US20080277377A1

公开(公告)日：2008-11-13

申请号：US12219117

申请日：2008-07-16

申请人： Isao Nakatani ,  Kimiko Mashimo ,  Naoko Matsui

发明人： Isao Nakatani ,  Kimiko Mashimo ,  Naoko Matsui

IPC分类号： B44C1/22 ,  C23F1/00

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  C23F4/00 ,  G11B5/3116 ,  G11B5/3163 ,  G11B5/3909 ,  H01F41/308 ,  H01L21/0332 ,  H01L21/32136 ,  H01L21/32139 ,  H01L43/12 ,  Y10T29/49021 ,  Y10T29/49052

摘要： The object of the present invention is to provide a masking material for dry etching, which is suitable for fine processing of a magnetic film as thin as a few nm such as NiFe or CoFe constituting a TMR film and capable of simplifying the process for producing a TMR element and reducing production costs related to facilities and materials. This object was solved by a masking material for dry etching of a magnetic material by using a mixed gas of carbon monoxide and a nitrogenous compound as etching gas, which comprises a metal (tantalum, tungsten, zirconium or hafnium) with a melting or boiling point increasing upon conversion thereof into a nitride or carbide.

摘要翻译： 本发明的目的是提供一种用于干蚀刻的掩模材料，其适用于细小的几nm的薄膜的细微处理，例如构成TMR膜的NiFe或CoFe，并且能够简化制造方法 TMR元素，降低与设备和材料相关的生产成本。 该目的通过使用一氧化碳和含氮化合物的混合气体作为蚀刻气体的用于干法蚀刻磁性材料的掩模材料来解决，该蚀刻气体包括具有熔点或沸点的金属（钽，钨，锆或铪） 在将其转化成氮化物或碳化物时增加。

公开(公告)号：US20070119811A1

公开(公告)日：2007-05-31

申请号：US11601737

申请日：2006-11-20

申请人： Isao Nakatani ,  Kimiko Mashimo ,  Naoko Matsui

发明人： Isao Nakatani ,  Kimiko Mashimo ,  Naoko Matsui

IPC分类号： B44C1/22 ,  H01B13/00

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  C23F4/00 ,  G11B5/3116 ,  G11B5/3163 ,  G11B5/3909 ,  H01F41/308 ,  H01L21/0332 ,  H01L21/32136 ,  H01L21/32139 ,  H01L43/12 ,  Y10T29/49021 ,  Y10T29/49052

摘要： The object of the present invention is to provide a masking material for dry etching, which is suitable for fine processing of a magnetic film as thin as a few nm such as NiFe or CoFe constituting a TMR film and capable of simplifying the process for producing a TMR element and reducing production costs related to facilities and materials. This object was solved by a masking material for dry etching of a magnetic material by using a mixed gas of carbon monoxide and a nitrogenous compound as etching gas, which comprises a metal (tantalum, tungsten, zirconium or hafnium) with a melting or boiling point increasing upon conversion thereof into a nitride or carbide.

摘要翻译： 本发明的目的是提供一种用于干蚀刻的掩模材料，其适用于细小的几nm的薄膜的细微处理，例如构成TMR膜的NiFe或CoFe，并且能够简化制造方法 TMR元素，降低与设备和材料相关的生产成本。 该目的通过使用一氧化碳和含氮化合物的混合气体作为蚀刻气体的用于干法蚀刻磁性材料的掩模材料来解决，该蚀刻气体包括具有熔点或沸点的金属（钽，钨，锆或铪） 在将其转化成氮化物或碳化物时增加。

公开(公告)号：US09322092B2

公开(公告)日：2016-04-26

申请号：US13606346

申请日：2012-09-07

申请人： Nobuo Yamaguchi ,  Kimiko Mashimo ,  Shinya Nagasawa

发明人： Nobuo Yamaguchi ,  Kimiko Mashimo ,  Shinya Nagasawa

IPC分类号： H01J37/34 ,  C23C14/34 ,  C23C14/56 ,  H01J37/32

CPC分类号： C23C14/34 ,  C23C14/564 ,  H01J37/32477 ,  H01J37/32504 ,  H01J37/3411 ,  H01J37/3417 ,  H01J37/3447

摘要： It is an object of this invention to prevent a deposited film from adhering to an exhaust chamber so as to suppress the generation of particles. A sputtering apparatus (1) includes a shutter accommodation unit (23) which is detachably placed in an exhaust chamber (8) and accommodates a shutter (19) in a retracted state, and shield members (40a, 40b) which at least partially cover the exhaust port of the exhaust chamber (8), and are at least partially formed around an opening portion of the shutter accommodation unit (23).

摘要翻译： 本发明的目的是防止沉积的膜粘附到排气室，以抑制颗粒的产生。 溅射装置（1）包括一个可拆卸地放置在排气室（8）中并容纳处于缩回状态的挡板（19）的挡板容纳单元（23），以及遮蔽构件（40a，40b） 排气室（8）的排气口，并且至少部分地形成在活门容纳单元（23）的开口部分周围。

公开(公告)号：US20100221895A1

公开(公告)日：2010-09-02

申请号：US12764242

申请日：2010-04-21

申请人： Takuya Seino ,  Manabu Ikemoto ,  Kimiko Mashimo

发明人： Takuya Seino ,  Manabu Ikemoto ,  Kimiko Mashimo

IPC分类号： H01L21/36 ,  H01L21/465

CPC分类号： H01L21/02049 ,  H01J37/32091 ,  H01J37/3244 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02573 ,  H01L21/0262 ,  H01L21/02658 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/67196 ,  H01L29/4916 ,  H01L29/495 ,  H01L29/4966 ,  H01L29/4975 ,  H01L29/517 ,  H01L29/66651

摘要： HF-originated radicals generated in a plasma-forming chamber are fed to a treatment chamber via feed holes, while HF gas molecules as the treatment gas are supplied to the treatment chamber from near the radical feed holes to suppress the excitation energy, thereby increasing the selectivity to Si to remove a native oxide film. Even with the dry-treatment, the surface treatment provides good surface flatness equivalent to that obtained by the wet-cleaning which requires high-temperature treatment, and further attains growth of Si single crystal film on the substrate after the surface treatment. The surface of formed Si single crystal film has small quantity of impurities of oxygen, carbon, and the like. After sputtering Hf and the like onto the surface of the grown Si single crystal film, oxidation and nitrification are applied thereto to form a dielectric insulation film such as HfO thereon, thus forming a metal electrode film. All through the above steps, the substrate is not exposed to atmospheric air, thereby suppressing the adsorption of impurities onto the interface, and thus obtaining a C-V curve with small hysteresis. As a result, good device characteristics are obtained in MOS-FET.

摘要翻译： 在等离子体形成室中产生的HF产生的自由基通过进料孔供给到处理室，而作为处理气体的HF气体分子从自由基进料孔附近供给到处理室，以抑制激发能，从而增加 Si的选择性去除天然氧化物膜。 即使进行干式处理，表面处理也能够提供与通过高温处理的湿式清洗相同的表面平坦度，进一步在表面处理后的基板上生长Si单晶膜。 形成的Si单晶膜的表面具有少量的氧，碳等的杂质。 在生长的Si单晶膜的表面上溅射Hf等之后，对其进行氧化和硝化以在其上形成诸如HfO的介电绝缘膜，从而形成金属电极膜。 通过上述步骤，基板不暴露于大气中，从而抑制杂质在界面上的吸附，从而获得滞后小的C-V曲线。 结果，在MOS-FET中获得良好的器件特性。

公开(公告)号：US20100133092A1

公开(公告)日：2010-06-03

申请号：US12684513

申请日：2010-01-08

申请人： Kimiko Mashimo ,  Naomu Kitano ,  Koji Tsunekawa

发明人： Kimiko Mashimo ,  Naomu Kitano ,  Koji Tsunekawa

IPC分类号： C23C14/36

CPC分类号： H01L21/02266 ,  C23C14/165 ,  C23C14/225 ,  C23C14/34 ,  C23C14/505 ,  C23C14/568 ,  H01L21/02175 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02183 ,  H01L21/02186 ,  H01L21/02189 ,  H01L21/02192 ,  H01L21/28088 ,  H01L21/28229 ,  H01L21/3144 ,  H01L21/318 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/518 ,  H01L43/12

摘要： A sputtering method and a sputtering apparatus are provided in which a target is disposed being inclined relative to a substrate placed on a substrate-placing table so that the condition of d≧D is satisfied, (d is the diameter of the substrate, and D is the diameter of the target), and the total number of rotations R of the substrate-placing table from the beginning of film-deposition on the substrate to the completion thereof becomes ten or more. Also the sputtering method and the sputtering apparatus are provided in which the rotational speed V of the substrate-placing table is controlled so that the total number of rotations R thereof satisfies the formula of 0.95×S−0.025≦R≦1.05×S+0.025 at R≦10, (R is the total number of rotations of the substrate-placing table from the beginning of film-deposition on the substrate to the completion thereof, and S is the value of the number of total rotations R rounded off to integer).

摘要翻译： 提供了一种溅射方法和溅射装置，其中设置了相对于放置在基板载置台上的基板倾斜的目标，使得满足d≥D的条件，（d是基板的直径，D 是目标的直径），并且从基板上的成膜开始到完成的基板载置台的总转数R变为十个以上。 还提供了溅射方法和溅射装置，其中控制基片放置台的旋转速度V，使得其总转数R满足0.95×S-0.025＆nlE; R＆lt; 1; 1.05×S + 0.025在R＆lt; 10;（R是基片放置台从基片上成膜开始到其完成的总转数，S是总转数R 整数）。

公开(公告)号：US08663437B2

公开(公告)日：2014-03-04

申请号：US12781903

申请日：2010-05-18

申请人： Nobuo Yamaguchi ,  Kimiko Mashimo ,  Shinya Nagasawa

发明人： Nobuo Yamaguchi ,  Kimiko Mashimo ,  Shinya Nagasawa

IPC分类号： C23C14/00 ,  C25B9/00 ,  C25B11/00 ,  C25B13/00 ,  C23C16/00

CPC分类号： C23C14/564 ,  C23C14/0036 ,  C23C14/35 ,  H01J37/34 ,  H01J37/3447 ,  H01J37/3464

摘要： A deposition apparatus includes a shutter storage unit which is connected to a processing chamber via an opening and stores a shutter in the retracted state into an exhaust chamber, and a shield member which is formed around the opening of the shutter storage unit and covers the exhaust port of the exhaust chamber. The shield member has, at a position of a predetermined height between the opening of the shutter storage unit and a deposition unit, the first exhaust path which communicates with the exhaust port of the exhaust chamber.

摘要翻译： 沉积装置包括快门存储单元，其经由开口连接到处理室，并将处于缩回状态的快门存储到排气室中;以及屏蔽构件，其围绕快门存储单元的开口形成并覆盖排气 排气室的端口。 在挡板存储单元的开口和沉积单元之间的预定高度的位置处具有与排气室的排气口连通的第一排气路径。

公开(公告)号：US20110312179A1

公开(公告)日：2011-12-22

申请号：US13115410

申请日：2011-05-25

申请人： Takashi Nakagawa ,  Eun-mi Kim ,  Naomu Kitano ,  Kimiko Mashimo

发明人： Takashi Nakagawa ,  Eun-mi Kim ,  Naomu Kitano ,  Kimiko Mashimo

IPC分类号： H01L21/285 ,  B05C11/00

CPC分类号： H01L27/11568 ,  C23C14/14 ,  C23C14/3492 ,  C23C14/5853 ,  H01L21/02181 ,  H01L21/02244 ,  H01L21/28185 ,  H01L21/28229 ,  H01L21/31683 ,  H01L29/40117 ,  H01L29/517 ,  H01L29/792

摘要： The present invention provides a substrate processing method and a substrate processing apparatus, which are capable of forming a high-k dielectric film with few trapping levels due to oxygen deficiencies and hot carriers by a sputtering method in one and the same vacuum vessel. The substrate processing method according to a first embodiment of the present invention includes: a first step of heating a to-be-processed substrate (102) arranged in a film forming treatment chamber (100) and depositing a metal film on the to-be-processed substrate (102) by physical vapor deposition using a target (106); and a second step of supplying a gas containing elements for oxidizing a metal film in the film forming treatment chamber (100) to oxidize the metal film by a thermal oxidation reaction.

摘要翻译： 本发明提供了一种基板处理方法和基板处理装置，其能够通过溅射法在同一真空容器中形成由于氧缺陷而具有很少的捕获水平的高k电介质膜和热载流子。 根据本发明第一实施例的基板处理方法包括：加热布置在成膜处理室（100）中的待处理基板（102）的第一步骤，并将金属膜沉积在待 - 处理的基底（102），通过使用靶（106）的物理气相沉积; 以及第二步骤，在成膜处理室（100）中供给含有氧化金属膜的元素的气体，以通过热氧化反应来氧化金属膜。

公开(公告)号：US20100224482A1

公开(公告)日：2010-09-09

申请号：US12781903

申请日：2010-05-18

申请人： Nobuo Yamaguchi ,  Kimiko Mashimo ,  Shinya Nagasawa

发明人： Nobuo Yamaguchi ,  Kimiko Mashimo ,  Shinya Nagasawa

IPC分类号： C23C14/34

CPC分类号： C23C14/564 ,  C23C14/0036 ,  C23C14/35 ,  H01J37/34 ,  H01J37/3447 ,  H01J37/3464

摘要： A deposition apparatus includes a shutter storage unit which is connected to a processing chamber via an opening and stores a shutter in the retracted state into an exhaust chamber, and a shield member which is formed around the opening of the shutter storage unit and covers the exhaust port of the exhaust chamber. The shield member has, at a position of a predetermined height between the opening of the shutter storage unit and a deposition unit, the first exhaust path which communicates with the exhaust port of the exhaust chamber.

摘要翻译： 沉积装置包括快门存储单元，其经由开口连接到处理室，并将处于缩回状态的快门存储到排气室中;以及屏蔽构件，其围绕快门存储单元的开口形成并覆盖排气 排气室的端口。 在挡板存储单元的开口和沉积单元之间的预定高度的位置处具有与排气室的排气口连通的第一排气路径。

公开(公告)号：US20100326818A1

公开(公告)日：2010-12-30

申请号：US12842732

申请日：2010-07-23

申请人： Manabu Ikemoto ,  Nobuo Yamaguchi ,  Kimiko Mashimo ,  Kazuaki Matsuo

发明人： Manabu Ikemoto ,  Nobuo Yamaguchi ,  Kimiko Mashimo ,  Kazuaki Matsuo

IPC分类号： C23C14/35 ,  C23C14/34

CPC分类号： H01L21/28097 ,  C23C14/0063 ,  C23C14/0068 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32761 ,  H01J37/3405 ,  H01J37/3447 ,  H01L21/02181 ,  H01L21/02186 ,  H01L21/02189 ,  H01L21/02266 ,  H01L21/28202 ,  H01L21/3143 ,  H01L29/4966 ,  H01L29/517

摘要： The invention provides a method of manufacturing a semiconductor device and a sputtering apparatus which improve the composition of a film formed by a metal and a reactive gas without increasing the number of steps. An embodiment includes the steps of: placing a substrate on a substrate holder in a process chamber; and sputtering a target in the process chamber by applying electric power thereto while feeding a first reactive gas and a second reactive gas having higher reactivity than that of the first reactive gas into the process chamber, to form a film containing a target material on the substrate. The step of forming a film is conducted by feeding at least the first reactive gas from a first gas feed opening formed near the target, and by feeding the second reactive gas from a second gas feed opening formed at a position with the distance from the target larger than that of the first gas feed opening.

摘要翻译： 本发明提供一种制造半导体器件和溅射装置的方法，该方法改善由金属和反应性气体形成的膜的组成而不增加步骤数。 实施例包括以下步骤：将衬底放置在处理室中的衬底保持器上; 并且在将第一反应气体和具有比第一反应气体的反应性高的第二反应气体供给到处理室的同时向处理室中施加电力而溅射靶，以在基板上形成含有靶材料的膜 。 形成膜的步骤是通过从形成在靶附近的第一气体供给口至少供给第一反应性气体，并且通过从形成在距离靶的距离的位置形成的第二气体供给口 大于第一气体供给口的尺寸。