公开(公告)号：US09349698B2

公开(公告)日：2016-05-24

申请号：US13534565

申请日：2012-06-27

申请人： Rubayat Mahmud ,  Saikumar Jayaraman ,  Sriram Muthukumar

发明人： Rubayat Mahmud ,  Saikumar Jayaraman ,  Sriram Muthukumar

IPC分类号： H01L23/48 ,  H01L23/00 ,  H01L23/31

CPC分类号： H01L24/05 ,  H01L23/3157 ,  H01L24/03 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L2224/02126 ,  H01L2224/0384 ,  H01L2224/03845 ,  H01L2224/0391 ,  H01L2224/0401 ,  H01L2224/05025 ,  H01L2224/05147 ,  H01L2224/05567 ,  H01L2224/05571 ,  H01L2224/05647 ,  H01L2224/1132 ,  H01L2224/1147 ,  H01L2224/11474 ,  H01L2224/1148 ,  H01L2224/11849 ,  H01L2224/13007 ,  H01L2224/13026 ,  H01L2924/00014 ,  H01L2924/351 ,  H01L2924/00012 ,  H01L2224/05552

摘要： This disclosure relates generally to a wafer having a plurality of semiconductor chips having a major surface, a metal contact positioned on one of the plurality of semiconductor chips and having a side surface and contact surface, the contact surface substantially parallel to the major surface, wherein the contact surface defines a thickness of the metal contact relative to the major surface, an underfill layer abutting the one of the plurality of semiconductor chips and the side surface of the metal contact, the underfill layer having a top surface substantially parallel to the major surface, wherein the top surface of the underfill layer defines a thickness of the underfill layer relative to the major surface, the thickness of the underfill layer being not greater than the thickness of the metal contact, and a solder bump formed in electrical contact with the contact surface of the metal contact.

摘要翻译： 本公开总体上涉及具有多个具有主表面的半导体芯片的晶片，位于多个半导体芯片之一上的金属触点，并且具有侧表面和接触表面，该接触表面基本上平行于主表面，其中 所述接触表面限定所述金属接触件相对于所述主表面的厚度，底部填充层邻接所述多个半导体芯片中的一个和所述金属接触件的侧表面，所述底部填充层具有基本上平行于所述主表面的顶表面 其中所述底部填充层的顶表面相对于所述主表面限定所述底部填充层的厚度，所述底部填充层的厚度不大于所述金属接触件的厚度，以及形成为与所述触点电接触的焊料凸块 表面的金属接触。

公开(公告)号：US07910674B2

公开(公告)日：2011-03-22

申请号：US10464978

申请日：2003-06-18

申请人： Larry Funderburk Rhodes ,  Andrew Bell ,  Ramakrishna Ravikiran ,  John C. Fondran ,  Saikumar Jayaraman ,  Brian Leslie Goodall ,  Richard A. Mimna ,  John-Henry Lipian

发明人： Larry Funderburk Rhodes ,  Andrew Bell ,  Ramakrishna Ravikiran ,  John C. Fondran ,  Saikumar Jayaraman ,  Brian Leslie Goodall ,  Richard A. Mimna ,  John-Henry Lipian

IPC分类号： C08F32/00 ,  G01R31/26 ,  H01L21/00 ,  H01L21/82 ,  H01L23/58 ,  H01L23/02 ,  H01L23/14 ,  H01L23/29

CPC分类号： C08G61/06 ,  C08F32/00 ,  C08F32/08 ,  G02B1/04 ,  C08L65/00

摘要： Methods for the addition polymerization of cycloolefins using a cationic Group 10 metal complex and a weakly coordinating anion of the formula: [(R′)zM(L′)x(L″)y]b[WCA]d wherein [(R′)zM(L′)x(L″)y] is a cation complex where M represents a Group 10 transition metal; R′ represents an anionic hydrocarbyl containing ligand; L′ represents a Group 15 neutral electron donor ligand; L″ represents a labile neutral electron donor ligand; x is 1 or 2; and y is 0, 1, 2, or 3; and z is 0 or 1, wherein the sum of x, y, and z is 4; and [WCA] represents a weakly coordinating counteranion complex; and b and d are numbers representing the number of times the cation complex and weakly coordinating counteranion complex are taken to balance the electronic charge on the overall catalyst complex.

摘要翻译： 使用阳离子第10族金属络合物和式（[（R'）z M（L'）x（L“）y] b [WCA] d的弱配位阴离子进行环烯加成聚合的方法，其中[（R' ）zM（L'）x（L“）y]是阳离子络合物，其中M表示第10族过渡金属; R'表示含阴离子烃基的配体; L'表示15族中性电子给体配体; L“表示不稳定的中性电子给体配体; x为1或2; y为0,1,2或3; 且z为0或1，其中x，y和z之和为4; 和[WCA]代表弱协调的对抗综合体; b和d是表示阳离子络合物和弱配位抗衡阴离子络合物在总体催化剂络合物上平衡电荷的次数的数字。

公开(公告)号：US07521115B2

公开(公告)日：2009-04-21

申请号：US10321060

申请日：2002-12-17

申请人： Terry Lee Sterrett ,  Tian An Chen ,  Saikumar Jayaraman

发明人： Terry Lee Sterrett ,  Tian An Chen ,  Saikumar Jayaraman

IPC分类号： B32B9/00

CPC分类号： C08L101/12 ,  B29C39/026 ,  B29C70/58 ,  B29C70/882 ,  B29L2031/3406 ,  C08J5/10 ,  H01L24/10 ,  H01L24/13 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/14 ,  H01L2924/30107 ,  H05K3/321 ,  H05K2201/0367 ,  H05K2201/10674 ,  H05K2201/10719 ,  Y10T428/24917 ,  Y10T428/25 ,  Y10T428/31681 ,  H01L2924/00 ,  H01L2224/0401

摘要： A method for low temperature bumping is disclosed. A resin capable of being cross-linked by free-radical or cationic polymerization at low temperature is provided. Electrically conductive particles are then added to the resin to form a mixture. The mixture is then activated by heat or exposure to light to polymerize the mixture. In an alternative embodiment, a vinyl ether resin is used, to which electrically conductive particles are added. The mixture is polymerized by exposure to light.

摘要翻译： 公开了一种低温碰撞的方法。 提供能够在低温下通过自由基或阳离子聚合交联的树脂。 然后将导电颗粒加入到树脂中以形成混合物。 然后通过加热或暴露于光使混合物活化，以使混合物聚合。 在替代实施方案中，使用乙烯基醚树脂，其中加入导电颗粒。 混合物通过曝光聚合。

公开(公告)号：US07387841B2

公开(公告)日：2008-06-17

申请号：US11013626

申请日：2004-12-15

申请人： Saikumar Jayaraman

发明人： Saikumar Jayaraman

IPC分类号： B32B9/04

CPC分类号： C09D183/04 ,  C08K3/32 ,  C08K5/5419 ,  Y10T428/31663

摘要： The present invention describes a method including: providing a material A, the material A including a siloxane backbone with a hydride functional group; reacting the material A with a material B in the presence of a catalyst to form a material C, the material B including an alkenyl functional group and an aromatic carbonate functional group; heating the material C to form a material D, the material D including a phenol functional group; and reacting the material D with a material E and a material F to form a material G, the material E including a cyanogen halide, the material F including an acid acceptor, the material G including an aromatic cyanate ester functional group. The present invention further describes a die attach adhesive including a three-dimensional network of substituted triazine rings.

摘要翻译： 本发明描述了一种方法，包括：提供材料A，包含具有氢化物官能团的硅氧烷主链的材料A; 在催化剂存在下使材料A与材料B反应形成材料C，材料B包括链烯基官能团和芳族碳酸酯官能团; 加热材料C以形成材料D，材料D包括酚官能团; 并使材料D与材料E和材料F反应以形成材料G，所述材料E包括卤化氰，包括酸受体的材料F，所述材料G包括芳族氰酸酯官能团。 本发明进一步描述了包含取代的三嗪环的三维网络的管芯附着粘合剂。

公开(公告)号：US07332807B2

公开(公告)日：2008-02-19

申请号：US11323512

申请日：2005-12-30

申请人： Ashay A. Dani ,  Anna M. Prakash ,  Saikumar Jayaraman ,  Mitesh Patel ,  Vijay S. Wakharkar

发明人： Ashay A. Dani ,  Anna M. Prakash ,  Saikumar Jayaraman ,  Mitesh Patel ,  Vijay S. Wakharkar

IPC分类号： H01L23/10 ,  H05K7/20

CPC分类号： H01L23/3737 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/16 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/2929 ,  H01L2224/293 ,  H01L2224/29486 ,  H01L2224/2949 ,  H01L2224/29499 ,  H01L2224/32245 ,  H01L2224/73253 ,  H01L2924/00014 ,  H01L2924/01079 ,  H01L2924/01327 ,  H01L2924/15311 ,  H01L2924/16152 ,  H01L2924/00 ,  H01L2224/05599

摘要： A chip package includes a thermal interface material disposed between a die backside and a heat sink. The thermal interface material includes a first metal particle that is covered by a dielectric film. The dielectric film is selected from an inorganic compound of the first metal or an inorganic compound coating of a second metal. The dielectric film diminishes overall heat transfer from the first metal particle in the thermal interface material by a small fraction of total possible heat transfer without the dielectric film. A method of operating the chip includes biasing the chip with the dielectric film in place.

摘要翻译： 芯片封装包括设置在模具背面和散热器之间的热界面材料。 热界面材料包括由电介质膜覆盖的第一金属颗粒。 电介质膜选自第一金属的无机化合物或第二金属的无机化合物涂层。 电介质膜减少热界面材料中的第一金属颗粒的总传热量，而不需要电介质膜的总可能传热的一小部分。 一种操作该芯片的方法包括：将该电介质膜的芯片偏压就位。

公开(公告)号：US07312292B2

公开(公告)日：2007-12-25

申请号：US10860876

申请日：2004-06-04

申请人： Ravi Ravikiran ,  Xiaoming Wu ,  Larry F. Rhodes ,  Robert A. Shick ,  Hiroko Nakano ,  Hirotaka Nonaka ,  Huabin Wang ,  Saikumar Jayaraman ,  Robert John Duff ,  John-Henry Lipian

发明人： Ravi Ravikiran ,  Xiaoming Wu ,  Larry F. Rhodes ,  Robert A. Shick ,  Hiroko Nakano ,  Hirotaka Nonaka ,  Huabin Wang ,  Saikumar Jayaraman ,  Robert John Duff ,  John-Henry Lipian

IPC分类号： C08F30/02

CPC分类号： C08J5/2256 ,  C08G61/06 ,  C08J2385/04 ,  H01B1/122 ,  H01M4/8605 ,  H01M8/1023 ,  H01M8/1025 ,  H01M8/1032 ,  H01M8/1039

摘要： A polymer comprising polycyclic repeating units having recurring ion conducting groups and optional crosslinkable groups is disclosed. The present invention provides the capability of tailoring polymers to impart unique properties to membranes fabricated from the polymers. Membranes comprising the polymers and methods for preparing the membranes and their use in ion conducting membranes, particularly in fuel cells, are also provided.

摘要翻译： 公开了包含具有重复离子导电基团和任选的可交联基团的多环重复单元的聚合物。 本发明提供了定制聚合物以赋予由聚合物制造的膜独特的性能的能力。 还提供了包含聚合物的膜和用于制备膜的方法及其在离子传导膜中的用途，特别是在燃料电池中。

公开(公告)号：US20070287005A1

公开(公告)日：2007-12-13

申请号：US11893420

申请日：2007-08-15

申请人： Saikumar Jayaraman ,  Paul Koning ,  Ashay Dani

发明人： Saikumar Jayaraman ,  Paul Koning ,  Ashay Dani

IPC分类号： B32B5/16 ,  B32B18/00 ,  H01S4/00

CPC分类号： H01L23/3737 ,  C08K3/08 ,  C08K3/22 ,  H01L23/4275 ,  H01L2224/16 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2924/15311 ,  H01L2924/15312 ,  H01L2924/16152 ,  Y10T29/49002 ,  Y10T29/49083 ,  Y10T29/49099 ,  Y10T29/4913 ,  Y10T428/12701 ,  Y10T428/12896 ,  Y10T428/23 ,  Y10T428/25 ,  Y10T428/252 ,  Y10T428/2982 ,  H01L2924/00

摘要： A thermal interface material made with a phase change polymer and a fusible filler material.

摘要翻译： 由相变聚合物和易熔填料制成的热界面材料。

公开(公告)号：US20070251639A1

公开(公告)日：2007-11-01

申请号：US11825400

申请日：2007-07-06

申请人： Saikumar Jayaraman ,  Paul Koning ,  Ashay Dani

发明人： Saikumar Jayaraman ,  Paul Koning ,  Ashay Dani

IPC分类号： B29C65/02 ,  C09J201/00

CPC分类号： H05K13/0465 ,  H01L23/42 ,  H01L23/4275 ,  H01L24/29 ,  H01L2224/16225 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/29298 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/83101 ,  H01L2924/0001 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01058 ,  H01L2924/01079 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15312 ,  H01L2924/16152 ,  Y10T156/10 ,  Y10T428/24926 ,  Y10T428/25 ,  Y10T428/254 ,  Y10T428/256 ,  Y10T428/31917 ,  H01L2924/00 ,  H01L2924/01022 ,  H01L2924/01083 ,  H01L2224/29099 ,  H01L2224/0401

摘要： Embodiments of the present invention provide various polymeric matrices that may be used as a binder matrix for polymer solder hybrid thermal interface materials. In alternative embodiments the binder matrix material may be phophozene, perfluoro ether, polyether, or urethane. For one embodiment, the binder matrix is selected to provide improved adhesion to a variety of interfaces. For an alternative embodiment the binder matrix is selected to provide low contact resistance. In alternative embodiments, polymeric materials containing fusible and non-fusible particles may be used in application where heat removal is desired and is not restricted to thermal interface materials for microelectronic devices.

公开(公告)号：US07244634B2

公开(公告)日：2007-07-17

申请号：US10815968

申请日：2004-03-31

申请人： Daewoong Suh ,  Saikumar Jayaraman ,  Mohd Erwan P. Bin Basiron ,  Sheau Hooi Lim ,  Yoong Tatt P. Chin

发明人： Daewoong Suh ,  Saikumar Jayaraman ,  Mohd Erwan P. Bin Basiron ,  Sheau Hooi Lim ,  Yoong Tatt P. Chin

IPC分类号： H01L21/00

CPC分类号： H05K3/3436 ,  H01L23/49816 ,  H01L23/49838 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/16 ,  H01L2924/00014 ,  H01L2924/01077 ,  H01L2924/15311 ,  H05K1/0271 ,  H05K2201/10977 ,  H05K2203/0126 ,  H05K2203/1189 ,  Y02P70/613 ,  H01L2224/05599

摘要： A stress-relief layer is formed by dispensing a polymer upon a substrate lower surface under conditions to partially embed a solder bump that is disposed upon the lower surface. The stress-relief layer flows against the solder bump. A stress-compensation collar is formed on a board to which the substrate is mated and the SCC partially embeds the solder bump. An article that exhibits a stress-relief layer and a stress-compensation collar is also included. A computing system that includes a stress-relief layer and a stress-compensation collar is also included.

摘要翻译： 通过在基底下表面上分配聚合物以部分地嵌入设置在下表面上的焊料凸块的条件来形成应力消除层。 应力消除层流向焊料凸块。 应力补偿轴环形成在与基板配合的板上，并且SCC部分地嵌入焊料凸块。 还包括展示应力消除层和应力补偿套环的物品。 还包括一个包括应力消除层和应力补偿环的计算系统。

公开(公告)号：US07084492B2

公开(公告)日：2006-08-01

申请号：US10611618

申请日：2003-06-30

申请人： Saikumar Jayaraman

发明人： Saikumar Jayaraman

IPC分类号： H01L23/48

CPC分类号： C08G69/42 ,  C08G59/504 ,  H01L21/563 ,  H01L23/293 ,  H01L23/296 ,  H01L23/3128 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2224/0401

摘要： An apparatus including a first substrate comprising a first set of contact points; a second substrate including a second set of contact points coupled to the first substrate through interconnections between a portion of the first set of contact points a portion of the second set of contact points; and a composition disposed between the first substrate and the second substrate including a siloxane-based aromatic diamine.

摘要翻译： 一种装置，包括：第一基板，包括第一组接触点; 第二基板，包括通过第一组接触点的一部分与第二组接触点的一部分之间的互连而耦合到第一基板的第二组接触点; 以及设置在所述第一基板和所述第二基板之间的包含硅氧烷基芳族二胺的组合物。