摘要:
A chip-on-flex HDI module is fabricated by dispensing encapsulant material onto the components of a populated dielectric film or sheet in an interrupted pattern which leaves the backsides of selected components free of encapsulant. The dispensing is accomplished by relative motion of the dispenser tip and the populated film, with the dispenser tip at a height slightly above the desired liquid fill height during dispensing. At the locations of the components which are to be free of encapsulant, the dispensing stops, and the tip may be raised to prevent residual viscous matter on the dispenser tip from contacting the backside of the exposed component.
摘要:
Interconnect structures suitable for use in connecting anode-illuminated detector modules to downstream circuitry are disclosed. In certain embodiments, the interconnect structures are based on or include low atomic number or polymeric features and/or are formed at a density or thickness so as to minimize or reduce radiation attenuation by the interconnect structures.
摘要:
A barrier coating for a composite article is provided. The barrier coating includes an organic zone; an inorganic zone; and an interface zone between the organic zone and the inorganic zone.
摘要:
An adhesive includes an epoxy resin and a hardener. The hardener includes trioxdiamine, diaminodicyclohexylmethane, toluene diamine, and bisphenol-A dianhydride.
摘要:
A semiconductor device package is provided. The semiconductor device package includes a laminate comprising a first metal layer disposed on a dielectric film; a plurality of vias extending through the laminate according to a predetermined pattern; one or more semiconductor devices attached to the dielectric film such that the semiconductor device contacts one or more vias; a patterned interconnect layer disposed on dielectric film, said patterned interconnect layer comprising one or more patterned regions of the first metal layer and an electrically conductive layer, wherein a portion of the patterned interconnect layer extends through one or more vias to form an electrical contact with the semiconductor device. The patterned interconnect layer comprises a top interconnect region and a via interconnect region, wherein the package interconnect region has a thickness greater than a thickness of the via interconnect region.
摘要:
A semiconductor device package includes a semiconductor device having connection pads formed thereon, with the connection pads being formed on first and second surfaces of the semiconductor device with edges of the semiconductor device extending therebetween. A first passivation layer is applied on the semiconductor device and a base dielectric laminate is affixed to the first surface of the semiconductor device that has a thickness greater than that of the first passivation layer. A second passivation layer having a thickness greater than that of the first passivation layer is applied over the first passivation layer and the semiconductor device to cover the second surface and the edges of the semiconductor device, and metal interconnects are coupled to the connection pads, with the metal interconnects extending through vias formed through the first and second passivation layers and the base dielectric laminate sheet to form a connection with the connection pads.
摘要:
An embedded chip package (ECP) includes a plurality of re-distribution layers joined together in a vertical direction to form a lamination stack, each re-distribution layer having vias formed therein. The embedded chip package also includes a first chip embedded in the lamination stack and a second chip attached to the lamination stack and stacked in the vertical direction with respect to the first chip, each of the chips having a plurality of chip pads. The embedded chip package further includes an input/output (I/O) system positioned on an outer-most re-distribution layer of the lamination stack and a plurality of metal interconnects electrically coupled to the I/O system to electrically connect the first and second chips to the I/O system. Each of the plurality of metal interconnects extends through a respective via to form a direct metallic connection with a metal interconnect on a neighboring re-distribution layer or a chip pad on the first or second chip.
摘要:
Methods and devices for coating an interior surface of a container using ICPECVD are provided. In one embodiment, a method of coating an interior surface of a container comprises: depositing a barrier film on the interior surface of the container using inductively coupled plasma-enhanced chemical-vapor deposition.
摘要:
A surface mount packaging structure that yields improved thermo-mechanical reliability and more robust second-level package interconnections is disclosed. The surface mount packaging structure includes a sub-module having a dielectric layer, semiconductor devices attached to the dielectric layer, a first level metal interconnect structure electrically coupled to the semiconductor devices, and a second level I/O connection electrically coupled to the first level interconnect and formed on the dielectric layer on a side opposite the semiconductor devices, with the second level I/O connection configured to connect the sub-module to an external circuit. The semiconductor devices of the sub-module are attached to the first surface of a multi-layer substrate structure, with a dielectric material positioned between the dielectric layer and the multi-layer substrate structure to fill in gaps in the surface-mount structure and provide additional structural integrity thereto.
摘要:
A composite article with at least one high integrity protective coating, the high integrity protective coating having at least one planarizing layer and at least one organic-inorganic composition barrier coating layer. A method for depositing a high integrity protective coating.