Method for a thin film multilayer capacitor
    9.
    发明授权
    Method for a thin film multilayer capacitor 失效
    薄膜多层电容器的方法

    公开(公告)号:US06216324B1

    公开(公告)日:2001-04-17

    申请号:US09382536

    申请日:1999-08-25

    IPC分类号: H01G4002

    摘要: An electronic component structure is proposed, wherein an interposer thin film capacitor structure is employed between an active electronic component and a multilayer circuit card. A method for making the interposer thin film capacitor is also proposed. In order to eliminate fatal electrical shorts in the overlying thin film regions that arise from pits, voids, or undulations on the substrate surface, a thick first metal layer, on the order of 0.5-10 mm thick, is deposited on the substrate upon which the remaining thin films, including a dielectric film and second metal layer, are then applied. The first metal layer is comprised of Pt or other electrode metal, or a combination of Pt, Cr, and Cu metals, and a diffusion barrier layer. Additional Ti layers may be employed for adhesion enhancement. The thickness of the first metal layers are approximately: 200 A for the Cr layer; 0.5-10 mm for the Cu layer; 1000 A-5000 A for the diffusion barrier; and 100 A-2500 A for a Pt layer.

    摘要翻译: 提出了一种电子部件结构,其中在有源电子部件和多层电路卡之间采用中介层薄膜电容器结构。 还提出了一种用于制造中介层薄膜电容器的方法。 为了消除由衬底表面上的凹坑,空隙或起伏引起的上覆薄膜区域中的致命电短路,厚度为0.5-10毫米的厚的第一金属层沉积在衬底上,衬底上沉积 然后施加包括电介质膜和第二金属层的剩余薄膜。 第一金属层由Pt或其他电极金属或Pt,Cr和Cu金属的组合以及扩散阻挡层组成。 另外的Ti层可以用于附着增强。 对于Cr层,第一金属层的厚度约为:200A; 铜层为0.5-10毫米; 1000 A-5000 A用于扩散阻挡层; 和Pt层的100A-2500A。