摘要:
A large ceramic substrate article for electronic applications including at least one layer of sintered ceramic material, the layer including a plurality of greensheet segments of ceramic material joined edge to edge. Also disclosed is a method of fabricating a large ceramic greensheet article as well as a large ceramic substrate article.
摘要:
A large ceramic substrate article for electronic applications including at least one layer of sintered ceramic material, the layer including a plurality of greensheet segments of ceramic material joined edge to edge. Also disclosed is a method of fabricating a large ceramic greensheet article as well as a large ceramic substrate article.
摘要:
Disclosed is a method of selectively depositing a metallic layer on a metallic feature on a ceramic substrate. The metallic layer preferably may be elemental nickel particles, elemental copper particles, a mixture of copper and nickel particles, or copper/nickel alloy particles. The metallic layer is deposited as a paste mixture which includes the metallic particles and a binder material. Through a subsequent heating step, the metallic layer tightly bonds to the metallic feature but only loosely bonds to the ceramic substrate. Thereafter, an ultrasonic treatment is applied to remove the loosely adhered metallic layer on the ceramic substrate. The metallic layer on the metallic feature, being tightly bonded, is not removed by the ultrasonic treatment.
摘要:
A ceramic substrate having an improved I/O pad adhesion layer. The ceramic substrate has an I/O pad for joining to an I/O pin. The I/O pad includes an improved adhesion layer of TiO, followed by layers of Ti (or Ti and Ni) and a solder wettable layer which may be Au or Pt. Also disclosed are low yield stress solders of Sn/Sb, Sn/Ag, Sn/Cu and Sn/Cu/Ti.
摘要:
Improved via-filling compositions for producing conductive vias in circuitized ceramic substrates, particularly multilayer substrates, without cracking and/or loss of hermetic sealing. The via-filling compositions comprise pastes containing a mixture of (a) ceramic and/or glass spheres of substantially- uniform diameter between about 0.5 and 6 .mu.m, (b) conductive metal particles or spheres having a maximum dimension or diameter between about 1/3 and 1/4 of the diameter of the ceramic and/or glass spheres, and (c) a binder vehicle. The formed conductive via bodies comprise a uniform conductive skeletal network of sintered metal particles densely packed within a uniform matrix of the co-sintered ceramic and/or glass spheres, which matrix is hermetically fused and integrated with ceramic layers forming the wall of the via in the ceramic circuit substrate.
摘要:
Improved vie-filling compositions for producing conductive vias in circuitized ceramic substrates, particularly multi-layer substrates, without cracking and/or loss of hermetic sealing. The via-filling compositions comprise pastes containing a mixture of (a) ceramic and/or glass spheres of substantially- uniform diameter between about 0.5 and 6 .mu.m, (b) conductive metal particles or spheres having a maximum dimension or diameter between about 1/3 and 1/4 of the diameter of the ceramic and/or glass spheres, and (c) a binder vehicle. The formed conductive via bodies comprise a uniform conductive skeletal network of sintered metal particles densely packed within a uniform matrix of the co-sintered ceramic and/or glass spheres, which matrix is hermetically fused and integrated with ceramic layers forming the wall of the via in the ceramic circuit substrate.
摘要:
A pre-thermal reflown dielectric interposer having a plurality of vias traversing through the interposer which correspond to the I/O pads on a chip and substrate. Cone shaped solder elements reside within the vias, whereby these solder elements are cone shaped prior to thermal reflow to permit a reduced force for allowing some non-planarity for joining the chip to the substrate. The interposer may comprise a polyester film, glass, alumina, polyimide, a heat curable polymer or an inorganic powder filler in an organic material. The interposer may also have an adhesive or adhesive layers disposed on the linear surfaces thereof. The present pre-thermal reflown interposer prohibits contact between the solder joints by isolating each of the joints and corresponding bonding pads, as well as preventing over compression of the solder joints by acting as a stand off.
摘要:
A method of forming non-spherically shaped solder interconnects, preferably conical, for attachment of electronic components in an electronic module. Preferably, the solder interconnects of the present invention are cone shaped and comprise of depositing a first solder followed by a second solder having a lower reflow temperature than the first solder. Warm placement of the electronic component at a somewhat elevated temperature than room temperature but less than the solder reflow temperature reduces the force required during placement of a semiconductor chip to a substrate. After warm placement, reflow of the module occurs at the lower reflow temperature of the second solder. The conical shape of the solder interconnects are formed by a heated coining die which may also coin a portion of the interconnects with flat surfaces for stand-offs. The ability of the cone shaped solder interconnects to meet the opposing surface of a chip or substrate at different heights accommodates the camber typically associated with chip and substrate surfaces.
摘要:
An electronic component structure is proposed, wherein an interposer thin film capacitor structure is employed between an active electronic component and a multilayer circuit card. A method for making the interposer thin film capacitor is also proposed. In order to eliminate fatal electrical shorts in the overlying thin film regions that arise from pits, voids, or undulations on the substrate surface, a thick first metal layer, on the order of 0.5-10 mm thick, is deposited on the substrate upon which the remaining thin films, including a dielectric film and second metal layer, are then applied. The first metal layer is comprised of Pt or other electrode metal, or a combination of Pt, Cr, and Cu metals, and a diffusion barrier layer. Additional Ti layers may be employed for adhesion enhancement. The thickness of the first metal layers are approximately: 200 A for the Cr layer; 0.5-10 mm for the Cu layer; 1000 A-5000 A for the diffusion barrier; and 100 A-2500 A for a Pt layer.
摘要:
A method of forming non-spherically shaped solder interconnects, preferably conical, for attachment of electronic components in an electronic module. Preferably, the solder interconnects of the present invention are cone shaped and comprise of depositing a first solder followed by a second solder having a lower reflow temperature than the first solder. Warm placement of the electronic component at a somewhat elevated temperature than room temperature but less than the solder reflow temperature reduces the force required during placement of a semiconductor chip to a substrate. After warm placement, reflow of the module occurs at the lower reflow temperature of the second solder. The conical shape of the solder interconnects are formed by a heated coining die which may also coin a portion of the interconnects with flat surfaces for stand-offs. The ability of the cone shaped solder interconnects to meet the opposing surface of a chip or substrate at different heights accommodates the camber typically associated with chip and substrate surfaces.