摘要:
In one embodiment, a semiconductor package may include a semiconductor chip having a chip pad formed on a first surface thereof, a sealing member for sealing the semiconductor chip and exposing the first surface of the semiconductor chip, a conductive wiring overlying a part of the first surface of the semiconductor chip and directly contacting a part of an upper surface of the sealing member. The conductive wiring further contacts the pad. The semiconductor package may also include an encapsulant covering the conductive wiring and having openings for exposing parts of the conductive wiring.
摘要:
In one embodiment, a semiconductor package may include a semiconductor chip having a chip pad formed on a first surface thereof, a sealing member for sealing the semiconductor chip and exposing the first surface of the semiconductor chip, a conductive wiring overlying a part of the first surface of the semiconductor chip and directly contacting a part of an upper surface of the sealing member. The conductive wiring further contacts the pad. The semiconductor package may also include an encapsulant covering the conductive wiring and having openings for exposing parts of the conductive wiring.
摘要:
In one embodiment, a semiconductor package may include a semiconductor chip having a chip pad formed on a first surface thereof, a sealing member for sealing the semiconductor chip and exposing the first surface of the semiconductor chip, a conductive wiring overlying a part of the first surface of the semiconductor chip and directly contacting a part of an upper surface of the sealing member. The conductive wiring further contacts the pad. The semiconductor package may also include an encapsulant covering the conductive wiring and having openings for exposing parts of the conductive wiring.
摘要:
In one embodiment, a semiconductor package may include a semiconductor chip having a chip pad formed on a first surface thereof, a sealing member for sealing the semiconductor chip and exposing the first surface of the semiconductor chip, a conductive wiring overlying a part of the first surface of the semiconductor chip and directly contacting a part of an upper surface of the sealing member. The conductive wiring further contacts the pad. The semiconductor package may also include an encapsulant covering the conductive wiring and having openings for exposing parts of the conductive wiring.
摘要:
A method of interconnecting semiconductor devices by using capillary motion, thereby simplifying fabricating operations, reducing fabricating costs, and simultaneously filling of through-silicon-vias (TSVs) and interconnecting semiconductor devices. The method includes preparing a first semiconductor device in which first TSVs are formed, positioning solder balls respectively on the first TSVs, performing a back-lap operation on the first semiconductor device, positioning a second semiconductor device, in which second TSVs are formed, above the first semiconductor device on which the solder balls are positioned, and performing a reflow operation such that the solder balls fill the first and second TSVs due to capillary motion.
摘要:
A semiconductor package of a POP structure includes first and second semiconductor packages, the second directly mounted on the first and containing a plurality of semiconductor chips. Chips in the second package are electrically connected via a through-electrode and the first and second packages are connected through a connection member disposed on the top surface of the first package.
摘要:
A semiconductor package comprises a first semiconductor chip, a second semiconductor chip on the first semiconductor chip, a third semiconductor chip on the second semiconductor chip and a fourth semiconductor chip on the third semiconductor chip. A first underfill layer is positioned between the second semiconductor chip and the first semiconductor chip; a second underfill layer is positioned between the third semiconductor chip and the second semiconductor chip, and a third underfill layer is positioned between the fourth semiconductor chip and the third semiconductor chip. In some embodiments, the second underfill layer comprises a material that is different than the first and third underfill layers.