公开(公告)号：US20110075389A1

公开(公告)日：2011-03-31

申请号：US12960148

申请日：2010-12-03

申请人： Shintaro YAMAMICHI ,  Katsumi KIKUCHI ,  Yoichiro KURITA ,  Koji SOEJIMA

发明人： Shintaro YAMAMICHI ,  Katsumi KIKUCHI ,  Yoichiro KURITA ,  Koji SOEJIMA

IPC分类号： H01R9/00

CPC分类号： H01L23/49816 ,  H01L21/6835 ,  H01L23/5383 ,  H01L23/5386 ,  H01L24/81 ,  H01L24/97 ,  H01L25/0657 ,  H01L2221/68345 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/16 ,  H01L2224/16235 ,  H01L2224/81801 ,  H01L2224/97 ,  H01L2225/06517 ,  H01L2225/06572 ,  H01L2225/06586 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01056 ,  H01L2924/01057 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01082 ,  H01L2924/09701 ,  H01L2924/10329 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/15173 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/18161 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/00 ,  H01L2224/05599

摘要： A semiconductor device comprising a flat wiring board, a first LSI disposed on one surface of the wiring board, a sealing resin for covering the one surface and a side face of the first semiconductor element, and a second LSI disposed on another surface of the wiring board. The wiring board has conductive wiring as a wiring layer, an insulation resin as a support layer for the wiring layer, and a conductive through-hole that passes through the wiring layer and the support layer. Connection points between lands disposed in positions in which the external peripheral edges of the semiconductor elements transverse the interior of the lands as viewed vertically from above, which lands are selected from land portions on which the external connection terminals are formed, and the wiring board formed in the same plane as the lands, are unevenly distributed toward one side of the wiring board. Connections for very small wiring are thereby made possible, and a plurality of semiconductor elements can be very densely connected.

摘要翻译： 一种半导体器件，包括平面布线板，布置在所述布线板的一个表面上的第一LSI，用于覆盖所述一个表面的密封树脂和所述第一半导体元件的侧面，以及设置在所述布线的另一个表面上的第二LSI 板。 布线基板具有作为布线层的导电布线，作为布线层的支撑层的绝缘树脂，以及穿过布线层和支撑层的导电性通孔。 半导体元件的外周边缘从上方垂直观察到的焊盘的内部的位置之间的连接点，其中所述焊盘从形成有外部连接端子的焊盘部分选择，并且形成了布线板 在与地面相同的平面中，不均匀地分布在布线板的一侧。 由此，可以实现非常小的布线的连接，并且可以非常密集地连接多个半导体元件。

公开(公告)号：US20100127405A1

公开(公告)日：2010-05-27

申请号：US12618399

申请日：2009-11-13

申请人： Katsumi KIKUCHI ,  Shintaro YAMAMICHI ,  Yoichiro KURITA ,  Koji SOEJIMA

发明人： Katsumi KIKUCHI ,  Shintaro YAMAMICHI ,  Yoichiro KURITA ,  Koji SOEJIMA

IPC分类号： H01L23/48 ,  H05K1/11 ,  H01L23/52

CPC分类号： H01L25/0657 ,  H01L21/6835 ,  H01L23/49811 ,  H01L23/49816 ,  H01L23/49838 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L2221/68345 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2225/0651 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06572 ,  H01L2225/06586 ,  H01L2924/00014 ,  H01L2924/01019 ,  H01L2924/01046 ,  H01L2924/01057 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/15311 ,  H01L2924/1532 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/3025 ,  H05K3/20 ,  H05K3/28 ,  H05K3/4007 ,  H05K2201/0367 ,  H05K2201/09881 ,  H05K2201/0989 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45015 ,  H01L2924/207

摘要： A wiring board comprising a first surface on which a first electrode is disposed and a second surface on which a second electrode is disposed; at least a single insulation layer and at least a single wiring layer; and one or a plurality of mounted semiconductor elements, wherein the second electrode disposed on the second surface is embedded in the insulation layer, the surface on the opposite side of the exposed surface on the second surface side of the second electrode is connected to the wiring layer, and all or part of the side surface of the second electrode does not make contact with the insulation layer.

摘要翻译： 一种布线板，包括：第一表面，其上设置有第一电极;第二表面，其上设置有第二电极; 至少单个绝缘层和至少一个布线层; 以及一个或多个安装的半导体元件，其中设置在第二表面上的第二电极嵌入在绝缘层中，在第二电极的第二表面侧上的暴露表面的相对侧上的表面连接到布线 层，并且第二电极的全部或部分侧面不与绝缘层接触。

公开(公告)号：US20100087058A1

公开(公告)日：2010-04-08

申请号：US12635160

申请日：2009-12-10

申请人： Koji SOEJIMA ,  Yoichiro KURITA ,  Masaya KAWANO ,  Shintaro YAMAMICHI ,  Katsumi KIKUCHI

发明人： Koji SOEJIMA ,  Yoichiro KURITA ,  Masaya KAWANO ,  Shintaro YAMAMICHI ,  Katsumi KIKUCHI

IPC分类号： H01L21/60

CPC分类号： H01L21/563 ,  H01L21/6835 ,  H01L24/81 ,  H01L25/0657 ,  H01L2221/68345 ,  H01L2224/0554 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/1147 ,  H01L2224/131 ,  H01L2224/16225 ,  H01L2224/16235 ,  H01L2224/32225 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/8121 ,  H01L2224/81815 ,  H01L2225/06572 ,  H01L2225/06586 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01021 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/15311 ,  H01L2924/014 ,  H01L2224/13099 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： A first electronic circuit component and a second electronic circuit component are electrically connected to an electro-conductive member via a first solder and a second solder, respectively. The electro-conductive member is formed in a resin film. The electro-conductive member is configured as containing a second diffusion barrier metal film. The second diffusion barrier metal film prevents diffusion of the second solder. Between the electro-conductive member and the first solder, a first diffusion barrier metal film is provided. The first diffusion barrier metal film prevents diffusion of the first solder. On the first surface of the resin film and on the electro-conductive member, an adhesive metal film is formed so as to contact with the resin film and the electro-conductive member. The adhesive metal film has stronger adhesiveness to the resin film than either of those of the first solder and the first diffusion barrier metal film.

摘要翻译： 第一电子电路部件和第二电子电路部件分别经由第一焊料和第二焊料电连接到导电部件。 导电构件形成在树脂膜中。 导电构件被构造成包含第二扩散阻挡金属膜。 第二扩散阻挡金属膜防止第二焊料的扩散。 在导电构件和第一焊料之间设置有第一扩散阻挡金属膜。 第一扩散阻挡金属膜防止第一焊料的扩散。 在树脂膜的第一表面和导电部件上形成粘接金属膜，以与树脂膜和导电部件接触。 粘合金属膜比第一焊料和第一扩散阻挡金属膜中的任一种具有比树脂膜更强的粘附性。

公开(公告)号：US20100297811A1

公开(公告)日：2010-11-25

申请号：US12853660

申请日：2010-08-10

申请人： Masaya KAWANO ,  Koji SOEJIMA ,  Yoichiro KURITA

发明人： Masaya KAWANO ,  Koji SOEJIMA ,  Yoichiro KURITA

IPC分类号： H01L21/50 ,  H01L21/768

CPC分类号： H05K3/423 ,  H01L21/4846 ,  H01L21/563 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/3128 ,  H01L23/49816 ,  H01L23/49827 ,  H01L24/48 ,  H01L24/73 ,  H01L25/0657 ,  H01L2221/68345 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16235 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48228 ,  H01L2224/73204 ,  H01L2224/73207 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2224/81005 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06586 ,  H01L2924/00014 ,  H01L2924/01078 ,  H01L2924/10253 ,  H01L2924/15173 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/3011 ,  H01L2924/3025 ,  H05K1/113 ,  H05K1/114 ,  H05K3/025 ,  H05K3/064 ,  H05K2203/016 ,  H05K2203/0733 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A method of manufacturing according to an embodiment of the present invention includes forming a seed metal layer 20a on a supporting substrate 70, forming an interconnect layer 10 including an interconnect 18 on the seed metal layer 20a, removing the supporting substrate 70 after forming the interconnect layer 10, and patterning the seed metal layer 20a thus to form an interconnect 20 after removing the supporting substrate.

摘要翻译： 根据本发明的实施例的制造方法包括在支撑衬底70上形成种子金属层20a，在种子金属层20a上形成包括互连18的互连层10，在形成互连之后移除支撑衬底70 层10，并且图案化种子金属层20a，从而在去除支撑衬底之后形成互连20。

公开(公告)号：US20110101541A1

公开(公告)日：2011-05-05

申请号：US12986716

申请日：2011-01-07

申请人： Masaya KAWANO ,  Koji SOEJIMA ,  Nobuaki TAKAHASHI

发明人： Masaya KAWANO ,  Koji SOEJIMA ,  Nobuaki TAKAHASHI

IPC分类号： H01L23/48

CPC分类号： H01L21/76898 ,  H01L23/481 ,  H01L2224/13 ,  H01L2224/13025 ,  H01L2224/14181

摘要： A falling off of a through electrode is inhibited without decreasing a reliability of a semiconductor device including a through electrode. A semiconductor device 100 includes: a silicon substrate 101; a through electrode 129 extending through the silicon substrate 101; and a first insulating ring 130 provided in a circumference of a side surface of the through electrode 129 and extending through the semiconductor substrate 101. In addition, the semiconductor device 100 also includes a protruding portion 146, being provided at least in the vicinity of a back surface of a device-forming surface of the semiconductor substrate 101 so as to contact with the through electrode 129, and protruding in a direction along the surface of the semiconductor substrate 101 toward an interior of the through electrode 129.

摘要翻译： 在不降低包括通孔的半导体器件的可靠性的情况下，抑制穿通电极的脱落。 半导体器件100包括：硅衬底101; 穿过硅衬底101的通孔电极129; 以及设置在贯通电极129的侧面的周围并延伸穿过半导体基板101的第一绝缘环130.此外，半导体器件100还包括突出部分146，其设置在至少在 半导体衬底101的器件形成表面的背表面与通孔129接触，并沿着半导体衬底101的表面朝向通孔129的内部突出。

公开(公告)号：US20120211872A1

公开(公告)日：2012-08-23

申请号：US13461230

申请日：2012-05-01

申请人： Masaya KAWANO ,  Koji SOEJIMA ,  Nobuaki TAKAHASHI

发明人： Masaya KAWANO ,  Koji SOEJIMA ,  Nobuaki TAKAHASHI

IPC分类号： H01L23/522

CPC分类号： H01L21/76898 ,  H01L23/481 ,  H01L2224/13 ,  H01L2224/13025 ,  H01L2224/14181

摘要： A falling off of a through electrode is inhibited without decreasing a reliability of a semiconductor device including a through electrode. A semiconductor device 100 includes: a silicon substrate 101; a through electrode 129 extending through the silicon substrate 101; and a first insulating ring 130 provided in a circumference of a side surface of the through electrode 129 and extending through the semiconductor substrate 101. In addition, the semiconductor device 100 also includes a protruding portion 146, being provided at least in the vicinity of a back surface of a device-forming surface of the semiconductor substrate 101 so as to contact with the through electrode 129, and protruding in a direction along the surface of the semiconductor substrate 101 toward an interior of the through electrode 129.

摘要翻译： 在不降低包括通孔的半导体器件的可靠性的情况下，抑制穿通电极的脱落。 半导体器件100包括：硅衬底101; 穿过硅衬底101的通孔电极129; 以及设置在贯通电极129的侧面的周围并延伸穿过半导体基板101的第一绝缘环130.此外，半导体器件100还包括突出部分146，其设置在至少在 半导体衬底101的器件形成表面的背表面与通孔129接触，并沿着半导体衬底101的表面朝向通孔129的内部突出。

公开(公告)号：US20120100715A1

公开(公告)日：2012-04-26

申请号：US13331640

申请日：2011-12-20

申请人： Nobuaki TAKAHASHI ,  Masahiro KOMURO ,  Koji SOEJIMA ,  Satoshi MATSUI ,  Masaya KAWANO

发明人： Nobuaki TAKAHASHI ,  Masahiro KOMURO ,  Koji SOEJIMA ,  Satoshi MATSUI ,  Masaya KAWANO

IPC分类号： H01L21/768

CPC分类号： H01L21/76898 ,  H01L23/481 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/12 ,  H01L2224/0401 ,  H01L2224/05001 ,  H01L2224/0554 ,  H01L2224/06181 ,  H01L2224/1147 ,  H01L2224/11472 ,  H01L2224/11901 ,  H01L2224/13009 ,  H01L2224/13025 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/14181 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/04953 ,  H01L2924/10329 ,  H01L2924/00014

摘要： The present invention provides a semiconductor device including at least one of an insulating layer and a semiconductor layer each including a hole formed therein, and a through electrode provided in the hole. In the semiconductor device, the side wall of the hole is constituted of a first region from the opening of the hole to a predetermined position between the opening of the hole and the bottom surface of the hole, and a second region from the predetermined position to the bottom surface of the hole. The through electrode includes a seed layer and a plating layer. The seed layer covers the second region and the bottom surface of the hole without covering the first region. In addition, the plating layer covers the seed layer and at least a part of the first region.

摘要翻译： 本发明提供一种半导体器件，其包括绝缘层和各自包括形成在其中的孔的半导体层中的至少一个，以及设置在孔中的通孔。 在半导体装置中，孔的侧壁由从孔的开口到孔的开口部与孔的底面之间的规定位置的第一区域和从规定位置到第二区域 孔的底面。 通孔包括种子层和镀层。 种子层覆盖孔的第二区域和底部表面而不覆盖第一区域。 此外，电镀层覆盖种子层和第一区域的至少一部分。

公开(公告)号：US20110147058A1

公开(公告)日：2011-06-23

申请号：US12973162

申请日：2010-12-20

申请人： Masaya KAWANO ,  Koji SOEJIMA

发明人： Masaya KAWANO ,  Koji SOEJIMA

IPC分类号： H05K1/09 ,  H05K1/18 ,  H05K3/10

CPC分类号： H05K3/4682 ,  H01L21/4846 ,  H01L23/3121 ,  H01L23/3128 ,  H01L23/49811 ,  H01L23/49816 ,  H01L23/49827 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H05K3/205 ,  H05K3/4644 ,  H05K3/4647 ,  H05K2201/09481 ,  H05K2201/09563 ,  H05K2201/096 ,  H05K2201/09781 ,  H05K2201/10545 ,  H05K2201/10674 ,  Y10T29/49155 ,  H01L2924/00

摘要： A multilayer wiring substrate has a configuration in which a first wiring layer including a plurality of first conductive members formed in a first insulating film, and formed to be exposed at a second surface side, and a second wiring layer including a plurality of second conductive members formed in a second insulating film which is formed on a first surface side on the side opposite to the second surface are laminated. The plurality of second conductive members is respectively connected directly to any of the plurality of first conductive members or connected through a different conductive material. The plurality of first conductive members is connected directly to any of the plurality of second conductive members or connected through a different conductive material, but includes dummy conductive members which do not form current pathways connecting with connected second conductive member.

摘要翻译： 多层布线基板具有这样的构造，其中，第一布线层包括形成在第一绝缘膜中并形成为在第二表面侧露出的多个第一导电部件和包括多个第二导电部件的第二布线层 形成在形成在与第二表面相对的一侧上的第一表面侧上的第二绝缘膜中。 多个第二导电构件分别直接连接到多个第一导电构件中的任一个或通过不同的导电材料连接。 多个第一导电构件直接连接到多个第二导电构件中的任一个或通过不同的导电材料连接，但是包括不形成与连接的第二导电构件连接的电流路径的虚拟导电构件。

公开(公告)号：US20100048019A1

公开(公告)日：2010-02-25

申请号：US12605586

申请日：2009-10-26

申请人： Masaya KAWANO ,  Koji SOEJIMA ,  Nobuaki TAKAHASHI

发明人： Masaya KAWANO ,  Koji SOEJIMA ,  Nobuaki TAKAHASHI

IPC分类号： H01L21/768

CPC分类号： H01L21/76898 ,  H01L23/481 ,  H01L2224/13 ,  H01L2224/13025 ,  H01L2224/14181

摘要： A falling off of a through electrode is inhibited without decreasing a reliability of a semiconductor device including a through electrode. A semiconductor device 100 includes: a silicon substrate 101; a through electrode 129 extending through the silicon substrate 101; and a first insulating ring 130 provided in a circumference of a side surface of the through electrode 129 and extending through the semiconductor substrate 101. In addition, the semiconductor device 100 also includes a protruding portion 146, being provided at least in the vicinity of a back surface of a device-forming surface of the semiconductor substrate 101 so as to contact with the through electrode 129, and protruding in a direction along the surface of the semiconductor substrate 101 toward an interior of the through electrode 129.

摘要翻译： 在不降低包括通孔的半导体器件的可靠性的情况下，抑制穿通电极的脱落。 半导体器件100包括：硅衬底101; 穿过硅衬底101的通孔电极129; 以及设置在贯通电极129的侧面的周围并延伸穿过半导体基板101的第一绝缘环130.此外，半导体器件100还包括突出部分146，其设置在至少在 半导体衬底101的器件形成表面的背表面与通孔129接触，并沿着半导体衬底101的表面朝向通孔129的内部突出。