Semiconductor integrated circuit memory
    5.
    发明授权
    Semiconductor integrated circuit memory 有权
    半导体集成电路存储器

    公开(公告)号:US06185149B2

    公开(公告)日:2001-02-06

    申请号:US09340147

    申请日:1999-06-28

    IPC分类号: G11C800

    CPC分类号: G11C7/1018 G11C7/1072

    摘要: A semiconductor memory includes memory cell blocks, a burst-length information generating circuit which generates burst-length information based on a burst length, and a block enable circuit which receives the burst-length information. The block enable circuit selectively enables one of the memory cell blocks when the burst length is equal to or shorter than a predetermined burst length and selectively enables a plurality of memory cell blocks based on the burst length when the burst length is longer than the predetermined burst length. Data are read from the above-mentioned one or plurality of memory cell blocks.

    摘要翻译: 半导体存储器包括存储单元块,基于突发长度生成突发长度信息的突发长度信息产生电路,以及接收脉冲串长度信息的块使能电路。 当突发长度等于或小于预定突发长度时,块使能电路选择性地启用存储单元块中的一个,并且当突发长度长于预定突发时,基于脉冲串长度选择性地启用多个存储单元块 长度。 从上述一个或多个存储单元块读取数据。