公开(公告)号：US4409457A

公开(公告)日：1983-10-11

申请号：US126199

申请日：1980-03-03

申请人： Kenichi Takahashi ,  Koichi Hirano ,  Shoji Futamura

发明人： Kenichi Takahashi ,  Koichi Hirano ,  Shoji Futamura

IPC分类号： B23H1/00 ,  B29C33/38 ,  B23P1/08

CPC分类号： B23H1/00 ,  B29C33/3842 ,  B29L2030/00

摘要： A system for manufacturing tire molding metal molds with electrical discharge machining is disclosed, which makes possible the rotation, longitudinal and cross feeding of a work table on which a workpiece to be machined into a tire molding metal mold is placed and the rotation, lifting and lowering of a machining head, whereby the workpiece is discharge-machined by feeding a discharge machining electrode in a plurality of different directions corresponding to a plurality of projections protruding essentially vertical to the tire molding surface of the tire molding metal mold to be machined, and by changing electrodes having such profiles as to prevent the excess metal removal of the projections in accordance with each of the electrode feeding directions.

摘要翻译： 公开了一种用于制造具有放电加工的轮胎成型金属模具的系统，这使得可以将待加工的工件放置在轮胎成型金属模具中的工作台的旋转，纵向和交​​叉进给以及旋转，提升和 降低加工头，由此通过在对应于基本上垂直于待加工的轮胎成型金属模具的轮胎成型表面突出的多个突起的多个不同方向上供给放电加工电极来对工件进行放电加工，以及 通过改变具有这种轮廓的电极，以防止根据每个电极馈送方向的多余的金属去除突起。

公开(公告)号：US4543050A

公开(公告)日：1985-09-24

申请号：US499913

申请日：1983-06-01

申请人： Kenichi Takahashi ,  Koichi Hirano ,  Shoji Futamura

发明人： Kenichi Takahashi ,  Koichi Hirano ,  Shoji Futamura

IPC分类号： B29C33/02 ,  B23H1/00 ,  B23H9/00 ,  B29C33/38 ,  B29C35/00 ,  B29D30/06 ,  B23P1/08

CPC分类号： B29D30/0606 ,  B23H9/00 ,  B29C33/3842 ,  B29L2030/00

摘要： A tire manufacturing mold having a contour surface consisting of a predetermined curved surface corresponding to the outer circumferential surface of a tire being molded, a plurality of bone portions and blade portions, both protruding on the contour surface, and a manufacturing method of the same are disclosed. The tire manufacturing mold is manufactured by discharge machining in such a manner that the blade portions are caused to protrude essentially vertically to the contour surface, and that the contour surface, the bone portions and the blade portions are integrally formed.

摘要翻译： 一种具有轮廓表面的轮胎制造模具，其轮廓表面由对应于正在模制的轮胎的外周面的预定弯曲表面组成，在轮廓表面上突出的多个骨部分和刀片部分及其制造方法 披露 轮胎制造模具通过排出加工制造，使得叶片部分基本上垂直于轮廓表面突出，并且轮廓表面，骨部分和叶片部分一体地形成。

公开(公告)号：US4471200A

公开(公告)日：1984-09-11

申请号：US438715

申请日：1982-11-03

申请人： Kenichi Takahashi ,  Koichi Hirano ,  Shoji Futamura

发明人： Kenichi Takahashi ,  Koichi Hirano ,  Shoji Futamura

IPC分类号： B29C33/02 ,  B23H1/00 ,  B23H9/00 ,  B29C33/38 ,  B29C35/00 ,  B29D30/06 ,  B23P1/08 ,  B23P1/20

CPC分类号： B29D30/0606 ,  B23H9/00 ,  B29C33/3842 ,  B29L2030/00

摘要： A method of making a mold which is utilized to manufacture a tire, the mold having a contour curved surface with broad bone portions and narrow blade portions extending therefrom, comprises a first machining stage utilizing a plurality of electrical discharge machining electrodes for approaching a workpiece used to make the mold, at different angles. Each of the electrodes used in the first machining stage are shaped to avoid the removal of excessive metal from the mold so that both the bone portions and the blade portions can extend normally from the contour curved surface. The method includes a second machining stage utilizing a further electrical discharge machining electrode which has recesses for receiving bone portions and blade portions formed by the first stage electrodes, and is movable laterally of the contour surface to form well-defined edges of the bone and blade portions.

摘要翻译： 一种制造用于制造轮胎的模具的方法，所述模具具有宽骨形部分和从其延伸的窄叶片部分的轮廓曲面，包括利用多个放电加工电极接近使用的工件的第一加工台 以不同的角度制造模具。 在第一加工阶段中使用的每个电极被成形为避免从模具中去除过多的金属，使得骨部分和刀片部分可以从轮廓曲面正常延伸。 该方法包括：第二加工台，其利用另外的放电加工电极，该电极具有用于接收由第一级电极形成的骨部分和刀片部分的凹部，并且可在轮廓表面侧向移动以形成骨和刀片的明确限定的边缘 部分。

公开(公告)号：US4411175A

公开(公告)日：1983-10-25

申请号：US193977

申请日：1980-10-06

申请人： Kenichi Takahashi ,  Koichi Hirano ,  Shoji Futamura

发明人： Kenichi Takahashi ,  Koichi Hirano ,  Shoji Futamura

IPC分类号： B29C33/00 ,  B23H7/02 ,  B29B13/00 ,  B29C33/38 ,  B29C33/42 ,  B29C67/00 ,  B29D30/06 ,  B29D30/08 ,  B29K21/00 ,  B29L30/00 ,  B21K5/20 ,  B23P17/00

CPC分类号： B29D30/0606 ,  B29C33/3842 ,  B29C33/42 ,  Y10T29/49796

摘要： A ring-shaped mold of the split mold type constructed by assembling into an annular shape a plurality of sectorial separate blocks formed by cutting a ring-shaped workpiece haveing a mold surface on the annular circumference thereof, and the method and apparatus for making the same are disclosed. Sector lines interfacing adjoining the separate blocks on the mold surface intersect the circumference of the ring-shaped mold at angles not perpendicular to said circumference.

摘要翻译： 一种分型模具的环形模具，其通过将环状圆周上具有模具表面的环状工件切割而形成的多个扇形分离块组装成环形，并且其制造方法和装置 被披露。 与模具表面上的分开的块相邻的扇形线路线与环形模具的圆周以不垂直于所述圆周的角度相交。

公开(公告)号：US08617943B2

公开(公告)日：2013-12-31

申请号：US12746440

申请日：2009-07-22

申请人： Takashi Ichiryu ,  Seiichi Nakatani ,  Koichi Hirano ,  Yoshihisa Yamashita ,  Shingo Komatsu

发明人： Takashi Ichiryu ,  Seiichi Nakatani ,  Koichi Hirano ,  Yoshihisa Yamashita ,  Shingo Komatsu

IPC分类号： H01L21/00

CPC分类号： H01L29/78603 ,  H01L24/19 ,  H01L24/82 ,  H01L27/1218 ,  H01L29/66765 ,  H01L29/78609 ,  H01L29/78681 ,  H01L29/7869 ,  H01L51/0024 ,  H01L51/003 ,  H01L51/0097 ,  H01L51/0541 ,  H01L51/0545 ,  H01L2221/68377 ,  H01L2224/04105 ,  H01L2224/73267 ,  H01L2224/76155 ,  H01L2224/82039 ,  H01L2224/82102 ,  H01L2224/92144 ,  H01L2224/92244 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01056 ,  H01L2924/01057 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/10329 ,  H01L2924/12042 ,  H01L2924/15788 ,  H01L2924/19041 ,  H01L2924/30105 ,  H01L2924/00

摘要： A method for fabricating a flexible semiconductor device includes: preparing a layered film 80 including a first metal layer 10, an inorganic insulating layer 20, a semiconductor layer 30, and a second metal layer 40 which are sequentially formed; etching the first metal layer 10 to form a gate electrode 12g; compression bonding a resin layer 50 to a surface of the layered film 80 provided with the gate electrode 12g to allow the gate electrode 12g to be embedded in the resin layer 50; and etching the second metal layer 40 to form a source electrode 42s and a drain electrode 42d, wherein the inorganic insulating layer 20 on the gate electrode 12g functions as a gate insulating film 22, and the semiconductor layer 30 between the source electrode 42s and drain electrode 42d on the inorganic insulating layer 20 functions as a channel 32.

摘要翻译： 一种制造柔性半导体器件的方法包括：制备包括依次形成的第一金属层10，无机绝缘层20，半导体层30和第二金属层40的层状膜80; 蚀刻第一金属层10以形成栅电极12g; 将树脂层50压接到设置有栅电极12g的层叠膜80的表面，以使栅电极12g嵌入树脂层50中; 并且蚀刻第二金属层40以形成源电极42s和漏电极42d，其中栅电极12g上的无机绝缘层20用作栅极绝缘膜22，并且源电极42s和漏极之间的半导体层30 无机绝缘层20上的电极42d用作通道32。

公开(公告)号：US08525178B2

公开(公告)日：2013-09-03

申请号：US13498700

申请日：2011-04-14

申请人： Takashi Ichiryu ,  Seiichi Nakatani ,  Koichi Hirano

发明人： Takashi Ichiryu ,  Seiichi Nakatani ,  Koichi Hirano

IPC分类号： H01L29/04

CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1262 ,  H01L27/1292 ,  H01L27/3244 ,  H01L29/78603 ,  H01L2251/5338

摘要： A flexible semiconductor device includes an insulating film on which a semiconductor element is formed. The top and bottom surfaces of the insulating film have a top wiring pattern layer and a bottom wiring pattern layer, respectively. The semiconductor element includes a semiconductor layer formed on the top surface of the insulating film, a source electrode and a drain electrode formed on the top surface of the insulating film so as to contact the semiconductor layer, and a gate electrode formed on the bottom surface of the insulating film so as to be opposite the semiconductor layer. A first thickness, which is the thickness of the insulating film facing the source electrode, the drain electrode, the top wiring pattern layer, and the bottom wiring pattern layer, is greater than a second thickness, which is the thickness of the insulating film between the gate electrode and the semiconductor layer.

摘要翻译： 柔性半导体器件包括其上形成有半导体元件的绝缘膜。 绝缘膜的顶表面和底表面分别具有顶部布线图案层和底部布线图案层。 半导体元件包括形成在绝缘膜的顶表面上的半导体层，形成在绝缘膜的顶表面上以与半导体层接触的源电极和漏电极，以及形成在底表面上的栅电极 的绝缘膜与半导体层相对。 作为与源极电极，漏极电极，顶部布线图案层和底部布线图案层相对的绝缘膜的厚度的第一厚度大于第二厚度，其是第二厚度，其是绝缘膜的厚度 栅电极和半导体层。

公开(公告)号：US20130032797A1

公开(公告)日：2013-02-07

申请号：US13641793

申请日：2011-12-19

申请人： Koichi Hirano ,  Shingo Komatsu ,  Yasuteru Saito ,  Naoki Ike

发明人： Koichi Hirano ,  Shingo Komatsu ,  Yasuteru Saito ,  Naoki Ike

IPC分类号： H01L21/336 ,  H01L29/786

CPC分类号： H01L29/7869 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78693

摘要： The present invention achieves a formation of a metal oxide film of a thin film transistor with a simplified process. The present invention is concerned with a method for manufacturing a field-effect transistor comprising a gate electrode, a source electrode, a drain electrode, a channel layer and a gate insulating layer wherein the channel layer is formed by using a metal salt-containing composition comprising a metal salt, a polyvalent carboxylic acid having a cis-form structure of —C(COOH)═C(COOH)—, an organic solvent and a water wherein a molar ratio of the polyvalent carboxylic acid to the metal salt is in the range of 0.5 to 4.0.

摘要翻译： 本发明通过简化的工艺实现了薄膜晶体管的金属氧化物膜的形成。 本发明涉及一种制造场效应晶体管的方法，该场效应晶体管包括栅电极，源电极，漏电极，沟道层和栅极绝缘层，其中通过使用含金属盐的组合物形成沟道层 包括金属盐，具有-C（COOH）= C（COOH） - 的顺式结构的多元羧酸，有机溶剂和水，其中多价羧酸与金属盐的摩尔比为 范围为0.5至4.0。

公开(公告)号：US07910403B2

公开(公告)日：2011-03-22

申请号：US11885562

申请日：2006-03-06

申请人： Koichi Hirano ,  Seiji Karashima ,  Takashi Ichiryu ,  Yoshihiro Tomita

发明人： Koichi Hirano ,  Seiji Karashima ,  Takashi Ichiryu ,  Yoshihiro Tomita

IPC分类号： H01L21/00

CPC分类号： H01L24/81 ,  H01L21/6835 ,  H01L23/49883 ,  H01L24/11 ,  H01L24/12 ,  H01L24/16 ,  H01L2224/0554 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/11003 ,  H01L2224/11005 ,  H01L2224/1141 ,  H01L2224/1152 ,  H01L2224/11524 ,  H01L2224/13099 ,  H01L2224/16 ,  H01L2224/293 ,  H01L2224/294 ,  H01L2224/73104 ,  H01L2224/83886 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01056 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/14 ,  H01L2924/15787 ,  H01L2924/15788 ,  H05K3/323 ,  H05K3/3484 ,  H05K2201/10977 ,  H05K2203/0425 ,  H05K2203/087 ,  H05K2203/1178 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： A flip chip mounting process wherein a semiconductor chip and a circuit substrate are electrically interconnected. The process includes the steps of preparing a semiconductor chip on which a first plurality of electrodes are formed and a circuit substrate on which a second plurality of electrodes are formed; supplying a composition onto a surface of the circuit substrate, such surface being provided with second plurality of electrodes; bringing the semiconductor chip into contact with a surface of said composition such that the first plurality of electrodes are opposed to the second plurality of electrodes; and heating the circuit substrate, and thereby electrical connections including a metal component constituting the metal particles dispersed in the composition are formed between the first plurality of electrodes and the second plurality of electrodes. Also, a thermoset resin layer is formed between the semiconductor chip and the circuit substrate.

摘要翻译： 一种倒装芯片安装工艺，其中半导体芯片和电路基板电连接。 该方法包括制备其上形成有第一多个电极的半导体芯片和形成有第二多个电极的电路基板的步骤; 在电路基板的表面上提供组合物，该表面设置有第二多个电极; 使所述半导体芯片与所述组合物的表面接触，使得所述第一多个电极与所述第二多个电极相对; 并且加热电路基板，从而在第一多个电极和第二多个电极之间形成包括构成分散在组合物中的金属颗粒的金属组分的电连接。 此外，在半导体芯片和电路基板之间形成热固性树脂层。

公开(公告)号：US20110042677A1

公开(公告)日：2011-02-24

申请号：US12863202

申请日：2009-11-13

申请人： Takeshi Suzuki ,  Kenichi Hotehama ,  Koichi Hirano ,  Seiichi Nakatani

发明人： Takeshi Suzuki ,  Kenichi Hotehama ,  Koichi Hirano ,  Seiichi Nakatani

IPC分类号： H01L33/08 ,  H01L21/336

CPC分类号： H01L29/66742 ,  H01L29/66765 ,  H01L29/786 ,  H01L29/78603 ,  H01L29/78681 ,  H01L29/7869

摘要： There is provided a flexible semiconductor device. The flexible semiconductor device of the present invention comprises a metal layer comprising a gate electrode, a source electrode and a drain electrode; a metal oxide film made from a metal which constitutes the metal layer and formed over a surface region of the metal layer; and a semiconductor layer formed above the gate electrode via the metal oxide film. In the flexible semiconductor device, uncovered portions, each of which is not covered with the metal oxide film, are locally formed in the surface region of the metal layer; and also electrical connections are formed between the source electrode and the semiconductor layer and between the drain electrode and the semiconductor layer via the uncovered portions.

摘要翻译： 提供了一种柔性半导体器件。 本发明的柔性半导体器件包括由栅电极，源电极和漏电极组成的金属层; 由金属制成的金属氧化物膜，其构成金属层并形成在金属层的表面区域上; 以及通过金属氧化物膜形成在栅极电极上方的半导体层。 在柔性半导体器件中，在金属层的表面区域局部形成未被金属氧化物膜覆盖的未覆盖部分， 并且还通过未覆盖部分在源电极和半导体层之间以及在漏电极和半导体层之间形成电连接。

公开(公告)号：US20100261321A1

公开(公告)日：2010-10-14

申请号：US12681399

申请日：2009-07-30

申请人： Koichi Hirano ,  Seiichi Nakatani ,  Tatsuo Ogawa

发明人： Koichi Hirano ,  Seiichi Nakatani ,  Tatsuo Ogawa

IPC分类号： H01L21/336

CPC分类号： H01L51/0541 ,  H01L51/0004 ,  H01L51/0022 ,  H01L51/0097 ,  H01L51/107 ,  Y02E10/549 ,  Y02P70/521

摘要： There is provided a method for manufacturing a flexible semiconductor device. The manufacturing method is characterized by comprising (i) a step of forming an insulating film on the upper surface of a resin film, (ii) a step of forming a pattern of extraction electrodes on the upper surface of the resin film, (iii) a step of forming a semiconductor layer on the insulating film in such a manner that the semiconductor layer is in contact with the pattern of extraction electrodes, and (iv) a step of forming a sealing resin layer on the upper surface of the resin film in such a manner that the sealing resin layer covers the semiconductor layer and the pattern of extraction electrodes, wherein at least one forming step among the above (i) to (iv) is carried out by a printing method. In the manufacturing method, various layers can be formed by a simple printing process without using a vacuum process, photolithography, or the like.

摘要翻译： 提供了一种用于制造柔性半导体器件的方法。 （i）在树脂膜的上表面形成绝缘膜的工序，（ii）在树脂膜的上表面形成引出电极的图案的工序，（iii） 以使得半导体层与引出电极的图案接触的方式在绝缘膜上形成半导体层的步骤，以及（iv）在树脂膜的上表面上形成密封树脂层的步骤 密封树脂层覆盖半导体层和提取电极的图案的方式，其中上述（i）至（iv）中的至少一个形成步骤通过印刷方法进行。 在制造方法中，可以通过简单的印刷工艺形成各种层，而不使用真空工艺，光刻等。