公开(公告)号：US08871567B2

公开(公告)日：2014-10-28

申请号：US13641793

申请日：2011-12-19

申请人： Koichi Hirano ,  Shingo Komatsu ,  Yasuteru Saito ,  Naoki Ike

发明人： Koichi Hirano ,  Shingo Komatsu ,  Yasuteru Saito ,  Naoki Ike

IPC分类号： H01L21/336 ,  H01L29/786 ,  H01L29/66

CPC分类号： H01L29/7869 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78693

摘要： The present invention achieves a formation of a metal oxide film of a thin film transistor with a simplified process. The present invention is concerned with a method for manufacturing a field-effect transistor comprising a gate electrode, a source electrode, a drain electrode, a channel layer and a gate insulating layer wherein the channel layer is formed by using a metal salt-containing composition comprising a metal salt, a polyvalent carboxylic acid having a cis-form structure of —C(COOH)═C(COOH)—, an organic solvent and a water wherein a molar ratio of the polyvalent carboxylic acid to the metal salt is in the range of 0.5 to 4.0.

摘要翻译： 本发明通过简化的工艺实现了薄膜晶体管的金属氧化物膜的形成。 本发明涉及一种制造场效应晶体管的方法，该场效应晶体管包括栅电极，源电极，漏电极，沟道层和栅极绝缘层，其中通过使用含金属盐的组合物形成沟道层 包括金属盐，具有-C（COOH）= C（COOH） - 的顺式结构的多元羧酸，有机溶剂和水，其中多价羧酸与金属盐的摩尔比为 范围为0.5至4.0。

公开(公告)号：US20130032797A1

公开(公告)日：2013-02-07

申请号：US13641793

申请日：2011-12-19

申请人： Koichi Hirano ,  Shingo Komatsu ,  Yasuteru Saito ,  Naoki Ike

发明人： Koichi Hirano ,  Shingo Komatsu ,  Yasuteru Saito ,  Naoki Ike

IPC分类号： H01L21/336 ,  H01L29/786

CPC分类号： H01L29/7869 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78693

摘要： The present invention achieves a formation of a metal oxide film of a thin film transistor with a simplified process. The present invention is concerned with a method for manufacturing a field-effect transistor comprising a gate electrode, a source electrode, a drain electrode, a channel layer and a gate insulating layer wherein the channel layer is formed by using a metal salt-containing composition comprising a metal salt, a polyvalent carboxylic acid having a cis-form structure of —C(COOH)═C(COOH)—, an organic solvent and a water wherein a molar ratio of the polyvalent carboxylic acid to the metal salt is in the range of 0.5 to 4.0.

摘要翻译： 本发明通过简化的工艺实现了薄膜晶体管的金属氧化物膜的形成。 本发明涉及一种制造场效应晶体管的方法，该场效应晶体管包括栅电极，源电极，漏电极，沟道层和栅极绝缘层，其中通过使用含金属盐的组合物形成沟道层 包括金属盐，具有-C（COOH）= C（COOH） - 的顺式结构的多元羧酸，有机溶剂和水，其中多价羧酸与金属盐的摩尔比为 范围为0.5至4.0。

公开(公告)号：US08617943B2

公开(公告)日：2013-12-31

申请号：US12746440

申请日：2009-07-22

申请人： Takashi Ichiryu ,  Seiichi Nakatani ,  Koichi Hirano ,  Yoshihisa Yamashita ,  Shingo Komatsu

发明人： Takashi Ichiryu ,  Seiichi Nakatani ,  Koichi Hirano ,  Yoshihisa Yamashita ,  Shingo Komatsu

IPC分类号： H01L21/00

CPC分类号： H01L29/78603 ,  H01L24/19 ,  H01L24/82 ,  H01L27/1218 ,  H01L29/66765 ,  H01L29/78609 ,  H01L29/78681 ,  H01L29/7869 ,  H01L51/0024 ,  H01L51/003 ,  H01L51/0097 ,  H01L51/0541 ,  H01L51/0545 ,  H01L2221/68377 ,  H01L2224/04105 ,  H01L2224/73267 ,  H01L2224/76155 ,  H01L2224/82039 ,  H01L2224/82102 ,  H01L2224/92144 ,  H01L2224/92244 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01056 ,  H01L2924/01057 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/10329 ,  H01L2924/12042 ,  H01L2924/15788 ,  H01L2924/19041 ,  H01L2924/30105 ,  H01L2924/00

摘要： A method for fabricating a flexible semiconductor device includes: preparing a layered film 80 including a first metal layer 10, an inorganic insulating layer 20, a semiconductor layer 30, and a second metal layer 40 which are sequentially formed; etching the first metal layer 10 to form a gate electrode 12g; compression bonding a resin layer 50 to a surface of the layered film 80 provided with the gate electrode 12g to allow the gate electrode 12g to be embedded in the resin layer 50; and etching the second metal layer 40 to form a source electrode 42s and a drain electrode 42d, wherein the inorganic insulating layer 20 on the gate electrode 12g functions as a gate insulating film 22, and the semiconductor layer 30 between the source electrode 42s and drain electrode 42d on the inorganic insulating layer 20 functions as a channel 32.

摘要翻译： 一种制造柔性半导体器件的方法包括：制备包括依次形成的第一金属层10，无机绝缘层20，半导体层30和第二金属层40的层状膜80; 蚀刻第一金属层10以形成栅电极12g; 将树脂层50压接到设置有栅电极12g的层叠膜80的表面，以使栅电极12g嵌入树脂层50中; 并且蚀刻第二金属层40以形成源电极42s和漏电极42d，其中栅电极12g上的无机绝缘层20用作栅极绝缘膜22，并且源电极42s和漏极之间的半导体层30 无机绝缘层20上的电极42d用作通道32。

公开(公告)号：US08709293B2

公开(公告)日：2014-04-29

申请号：US11793175

申请日：2005-12-14

申请人： Takashi Kitae ,  Seiji Karashima ,  Koichi Hirano ,  Toshiyuki Kojima ,  Seiichi Nakatani ,  Shingo Komatsu ,  Yoshihisa Yamashita

发明人： Takashi Kitae ,  Seiji Karashima ,  Koichi Hirano ,  Toshiyuki Kojima ,  Seiichi Nakatani ,  Shingo Komatsu ,  Yoshihisa Yamashita

IPC分类号： H01B1/02

CPC分类号： H05K3/323 ,  H01L21/6835 ,  H01L23/49838 ,  H01L24/06 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L2224/0401 ,  H01L2224/05554 ,  H01L2224/06131 ,  H01L2224/06135 ,  H01L2224/11001 ,  H01L2224/11003 ,  H01L2224/1141 ,  H01L2224/11502 ,  H01L2224/11522 ,  H01L2224/13099 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/16058 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/165 ,  H01L2224/2741 ,  H01L2224/27436 ,  H01L2224/29101 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29291 ,  H01L2224/293 ,  H01L2224/29311 ,  H01L2224/29313 ,  H01L2224/29316 ,  H01L2224/73204 ,  H01L2224/8121 ,  H01L2224/81815 ,  H01L2224/83097 ,  H01L2224/83192 ,  H01L2224/832 ,  H01L2224/83856 ,  H01L2224/83862 ,  H01L2224/8388 ,  H01L2224/83886 ,  H01L2224/83887 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01009 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01056 ,  H01L2924/01061 ,  H01L2924/01065 ,  H01L2924/01073 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/1579 ,  H01L2924/381 ,  H01L2924/3841 ,  H05K3/3436 ,  H05K2201/10674 ,  H05K2201/10977 ,  H05K2203/083 ,  H05K2203/087 ,  Y02P70/613 ,  H01L2924/00011 ,  H01L2924/066 ,  H01L2924/06 ,  H01L2924/0695 ,  H01L2924/062 ,  H01L2924/0615 ,  H01L2924/068 ,  H01L2924/0705 ,  H01L2924/0675 ,  H01L2924/07001 ,  H01L2924/0103 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2924/01083 ,  H01L2924/00015 ,  H01L2924/00 ,  H01L2924/00014

摘要： There is provided a flip-chip mounting resin composition which can be used for a flip-chip mounting process that is high in productivity and reliability and thus can be applicable to a flip-chip mounting of a next-generation LSI. This flip-chip mounting resin composition comprises a resin, metal particles and a convection additive 12 that boils upon heating the resin 13. Upon the heating of the resin 13, the metal particles melt and the boiling convection additive 12 convects within the resin 13. This flip-chip mounting resin composition is supplied between a circuit substrate 10 and a semiconductor chip 20, and subsequently the resin 13 is heated so that the molten metal particles self-assemble into the region between each electrode of the circuit substrate and each electrode of the semiconductor chip. As a result, an electrical connection is formed between each electrode of the circuit substrate and each electrode of the semiconductor chip. Finally, the resin 13 is allowed to cure so that the semiconductor chip 20 is secured to the circuit substrate 10, which leads to in a formation of a flip chip assembly.

摘要翻译： 提供了一种倒装芯片安装树脂组合物，其可用于生产率和可靠性高的倒装芯片安装工艺，因此可以应用于下一代LSI的倒装芯片安装。 这种倒装芯片安装树脂组合物包括树脂，金属颗粒和在加热树脂13时沸腾的对流添加剂12.当加热树脂13时，金属颗粒熔化，沸腾对流添加剂12在树脂13内对流。 将该倒装芯片安装树脂组合物供给在电路基板10和半导体芯片20之间，随后加热树脂13，使得熔融金属颗粒自组装成电路基板的每个电极和电极的每个电极之间的区域 半导体芯片。 结果，在电路基板的每个电极和半导体芯片的每个电极之间形成电连接。 最后，使树脂13固化，使得半导体芯片20固定到电路基板10，这导致形成倒装芯片组件。

公开(公告)号：US07888789B2

公开(公告)日：2011-02-15

申请号：US11090401

申请日：2005-03-25

申请人： Yasuhiro Sugaya ,  Shingo Komatsu ,  Koichi Hirano ,  Seiichi Nakatani ,  Yasuyuki Matsuoka ,  Toshiyuki Asahi ,  Yoshihisa Yamashita

发明人： Yasuhiro Sugaya ,  Shingo Komatsu ,  Koichi Hirano ,  Seiichi Nakatani ,  Yasuyuki Matsuoka ,  Toshiyuki Asahi ,  Yoshihisa Yamashita

IPC分类号： H01L23/12 ,  H01L21/4763 ,  H01R43/20

CPC分类号： H05K3/20 ,  H01L2221/68345 ,  H01L2221/68359 ,  H01L2221/68363 ,  H01L2924/0002 ,  H01L2924/0102 ,  H01L2924/01078 ,  H05K1/0306 ,  H05K1/16 ,  H05K1/162 ,  H05K1/165 ,  H05K1/167 ,  H05K3/205 ,  H05K3/4061 ,  H05K3/4069 ,  H05K2203/1461 ,  Y10T29/49149 ,  Y10T29/49179 ,  Y10T29/49208 ,  Y10T29/49213 ,  Y10T428/12486 ,  H01L2924/00

摘要： A transfer material capable of transferring a fine wiring pattern to a substrate reliably and easily. The transfer material includes at least three layers of a first metal layer as a carrier, a second metal layer that is transferred to the substrate as a wiring pattern, and a peel layer adhering the first and second metal layers releasably. On the surface portion of the first metal layer, a concave and convex portion corresponding to the wiring pattern is formed, and the peel layer and the second metal layer are formed on a region of the convex portions.

摘要翻译： 能够可靠且容易地将精细布线图案转印到基板上的转印材料。 转印材料包括作为载体的第一金属层，作为布线图案转印到基板的第二金属层和可释放地粘附第一和第二金属层的剥离层的至少三层。 在第一金属层的表面部分上形成与布线图形对应的凹凸部分，并且在凸部的区域上形成剥离层和第二金属层。

公开(公告)号：US07977741B2

公开(公告)日：2011-07-12

申请号：US12939729

申请日：2010-11-04

申请人： Koichi Hirano ,  Seiichi Nakatani ,  Shingo Komatsu ,  Yoshihisa Yamashita ,  Takashi Ichiryu

发明人： Koichi Hirano ,  Seiichi Nakatani ,  Shingo Komatsu ,  Yoshihisa Yamashita ,  Takashi Ichiryu

IPC分类号： H01L29/786

CPC分类号： H01L51/0024 ,  H01L29/41733 ,  H01L29/66742 ,  H01L29/78603 ,  H01L51/0023 ,  H01L51/0097 ,  H01L51/0525 ,  H01L51/055 ,  H01L51/102 ,  Y10T428/24917

摘要： A layered film of a three-layer clad foil formed with a first metal layer 23, a second metal layer 25, and an inorganic insulating layer 35 interposed therebetween is prepared. After the second metal layer 25 is partially etched to form a gate electrode 20g, the first metal layer 23 is partially etched to form source/drain electrodes 20s, 20d in a region corresponding to the gate electrode 20g. A semiconductor layer 40 is then formed in contact with the source/drain electrodes 20s, 20d and on the gate electrode 20g with the inorganic insulating layer 35 interposed therebetween. The inorganic insulating layer 35 on the gate electrode 20g functions as a gate insulating film 30, and the semiconductor layer 40 between the source/drain electrodes 20s, 20d on the inorganic insulating layer 35 functions as a channel.

摘要翻译： 制备形成有第一金属层23，第二金属层25和介于其间的无机绝缘层35的三层复合箔的分层膜。 在第二金属层25被部分蚀刻以形成栅电极20g之后，第一金属层23被部分蚀刻以在对应于栅电极20g的区域中形成源/漏电极20s，20d。 然后，将半导体层40形成为与源极/漏极20s，20d接触并且在栅极电极20g上形成有绝缘层35。 栅电极20g上的无机绝缘层35用作栅极绝缘膜30，无机绝缘层35上的源/漏电极20s，20d之间的半导体层40用作沟道。

公开(公告)号：US07851281B2

公开(公告)日：2010-12-14

申请号：US12518602

申请日：2008-10-01

申请人： Koichi Hirano ,  Seiichi Nakatani ,  Shingo Komatsu ,  Yoshihisa Yamashita ,  Takashi Ichiryu

发明人： Koichi Hirano ,  Seiichi Nakatani ,  Shingo Komatsu ,  Yoshihisa Yamashita ,  Takashi Ichiryu

IPC分类号： H01L21/336

CPC分类号： H01L51/0024 ,  H01L29/41733 ,  H01L29/66742 ,  H01L29/78603 ,  H01L51/0023 ,  H01L51/0097 ,  H01L51/0525 ,  H01L51/055 ,  H01L51/102 ,  Y10T428/24917

摘要： A layered film of a three-layer clad foil formed with a first metal layer 23, a second metal layer 25, and an inorganic insulating layer 35 interposed therebetween is prepared. After the second metal layer 25 is partially etched to form a gate electrode 20g, the first metal layer 23 is partially etched to form source/drain electrodes 20s, 20d in a region corresponding to the gate electrode 20g. A semiconductor layer 40 is then formed in contact with the source/drain electrodes 20s, 20d and on the gate electrode 20g with the inorganic insulating layer 35 interposed therebetween. The inorganic insulating layer 35 on the gate electrode 20g functions as a gate insulating film 30, and the semiconductor layer 40 between the source/drain electrodes 20s, 20d on the inorganic insulating layer 35 functions as a channel.

摘要翻译： 制备形成有第一金属层23，第二金属层25和介于其间的无机绝缘层35的三层复合箔的分层膜。 在第二金属层25被部分蚀刻以形成栅电极20g之后，第一金属层23被部分蚀刻以在对应于栅电极20g的区域中形成源/漏电极20s，20d。 然后，将半导体层40形成为与源极/漏极20s，20d接触并且在栅极电极20g上形成有绝缘层35。 栅电极20g上的无机绝缘层35用作栅极绝缘膜30，无机绝缘层35上的源/漏电极20s，20d之间的半导体层40用作沟道。

公开(公告)号：US20100012936A1

公开(公告)日：2010-01-21

申请号：US12518602

申请日：2008-10-01

申请人： Koichi Hirano ,  Seiichi Nakatani ,  Shingo Komatsu ,  Yoshihisa Yamashita ,  Takashi Ichiryu

发明人： Koichi Hirano ,  Seiichi Nakatani ,  Shingo Komatsu ,  Yoshihisa Yamashita ,  Takashi Ichiryu

IPC分类号： H01L29/786 ,  H01L21/336 ,  H01L21/8234 ,  B32B3/02

CPC分类号： H01L51/0024 ,  H01L29/41733 ,  H01L29/66742 ,  H01L29/78603 ,  H01L51/0023 ,  H01L51/0097 ,  H01L51/0525 ,  H01L51/055 ,  H01L51/102 ,  Y10T428/24917

摘要： A layered film of a three-layer clad foil formed with a first metal layer 23, a second metal layer 25, and an inorganic insulating layer 35 interposed therebetween is prepared. After the second metal layer 25 is partially etched to form a gate electrode 20g, the first metal layer 23 is partially etched to form source/drain electrodes 20s, 20d in a region corresponding to the gate electrode 20g. A semiconductor layer 40 is then formed in contact with the source/drain electrodes 20s, 20d and on the gate electrode 20g with the inorganic insulating layer 35 interposed therebetween. The inorganic insulating layer 35 on the gate electrode 20g functions as a gate insulating film 30, and the semiconductor layer 40 between the source/drain electrodes 20s, 20d on the inorganic insulating layer 35 functions as a channel.

摘要翻译： 制备形成有第一金属层23，第二金属层25和介于其间的无机绝缘层35的三层复合箔的分层膜。 在第二金属层25被部分蚀刻以形成栅电极20g之后，第一金属层23被部分蚀刻以在对应于栅电极20g的区域中形成源/漏电极20s，20d。 然后，将半导体层40形成为与源极/漏极20s，20d接触并且在栅极电极20g上形成有绝缘层35。 栅电极20g上的无机绝缘层35用作栅极绝缘膜30，无机绝缘层35上的源/漏电极20s，20d之间的半导体层40用作沟道。

公开(公告)号：US20050263860A1

公开(公告)日：2005-12-01

申请号：US11136110

申请日：2005-05-24

申请人： Koichi Hirano ,  Yoshiyuki Yamamoto ,  Seiichi Nakatani ,  Toshiyuki Kojima ,  Shingo Komatsu

发明人： Koichi Hirano ,  Yoshiyuki Yamamoto ,  Seiichi Nakatani ,  Toshiyuki Kojima ,  Shingo Komatsu

IPC分类号： H01L21/60 ,  H01L23/48 ,  H01L23/52 ,  H01L23/538 ,  H01L25/065

CPC分类号： H01L25/0657 ,  H01L23/5389 ,  H01L24/24 ,  H01L24/45 ,  H01L24/48 ,  H01L24/50 ,  H01L24/82 ,  H01L24/86 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/05624 ,  H01L2224/16225 ,  H01L2224/2402 ,  H01L2224/24051 ,  H01L2224/24145 ,  H01L2224/24226 ,  H01L2224/24227 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/92 ,  H01L2224/92244 ,  H01L2225/0651 ,  H01L2225/06517 ,  H01L2225/06524 ,  H01L2225/06551 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01058 ,  H01L2924/01064 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/12041 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2924/15165 ,  H01L2924/15311 ,  H01L2924/1532 ,  H01L2924/19043 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01L2224/83 ,  H01L2224/82 ,  H01L2924/00 ,  H01L2224/05599

摘要： An example of a semiconductor device of the present invention includes a first semiconductor element including a first element body portion and a first element electrode that is provided on a first face of the first element body portion; a wiring board including an insulating substrate and a first wiring layer that is formed on one principal face of the insulating substrate, the wiring board being disposed such that the one principal face of the wiring board is opposed to a second face of the first element body portion; a first film that covers at least a portion of a face of the first semiconductor element that includes the surface of the first element electrode and at least a portion of a face on the first semiconductor element side of the wiring board; and a second wiring layer that is formed on a face on the wiring board side of the first film and that includes a first conductor having first and second ends. The first end of the first conductor is bonded to the first element electrode, and the second end of the first conductor is bonded to a portion of the first wiring layer.

摘要翻译： 本发明的半导体器件的一个例子包括：第一半导体元件，包括第一元件主体部分和设置在第一元件主体部分的第一面上的第一元件电极; 布线板，包括绝缘基板和形成在所述绝缘基板的一个主面上的第一布线层，所述布线板布置成使得所述布线板的所述一个主面与所述第一元件体的第二面相对 一部分; 第一膜，其覆盖包括第一元件电极的表面和布线板的第一半导体元件侧的面的至少一部分的第一半导体元件的表面的至少一部分; 以及第二布线层，其形成在第一膜的布线板侧的面上，并且包括具有第一端和第二端的第一导体。 第一导体的第一端接合到第一元件电极，第一导体的第二端接合到第一布线层的一部分。

公开(公告)号：US20050186768A1

公开(公告)日：2005-08-25

申请号：US11090401

申请日：2005-03-25

申请人： Yasuhiro Sugaya ,  Shingo Komatsu ,  Koichi Hirano ,  Seiichi Nakatani ,  Yasuyuki Matsuoka ,  Toshiyuki Asahi ,  Yoshihisa Yamashita

发明人： Yasuhiro Sugaya ,  Shingo Komatsu ,  Koichi Hirano ,  Seiichi Nakatani ,  Yasuyuki Matsuoka ,  Toshiyuki Asahi ,  Yoshihisa Yamashita

IPC分类号： H05K1/03 ,  H05K1/16 ,  H05K3/20 ,  H05K3/40 ,  H01L21/00 ,  H01L21/44 ,  H01L21/461 ,  H01L23/48 ,  H01L29/40

CPC分类号： H05K3/20 ,  H01L2221/68345 ,  H01L2221/68359 ,  H01L2221/68363 ,  H01L2924/0002 ,  H01L2924/0102 ,  H01L2924/01078 ,  H05K1/0306 ,  H05K1/16 ,  H05K1/162 ,  H05K1/165 ,  H05K1/167 ,  H05K3/205 ,  H05K3/4061 ,  H05K3/4069 ,  H05K2203/1461 ,  Y10T29/49149 ,  Y10T29/49179 ,  Y10T29/49208 ,  Y10T29/49213 ,  Y10T428/12486 ,  H01L2924/00

摘要： A transfer material capable of transferring a fine wiring pattern to a substrate reliably and easily. The transfer material includes at least three layers of a first metal layer as a carrier, a second metal layer that is transferred to the substrate as a wiring pattern, and a peel layer adhering the first and second metal layers releasably. On the surface portion of the first metal layer, a concave and convex portion corresponding to the wiring pattern is formed, and the peel layer and the second metal layer are formed on a region of the convex portions.