公开(公告)号：US20070219234A1

公开(公告)日：2007-09-20

申请号：US11578492

申请日：2005-04-11

申请人： Kiyoshi Oizumi ,  Satoru Naito ,  Akira Nakao ,  Tsuyoshi Shinozuka ,  Satoshi Matsui ,  Kousei Shimada

发明人： Kiyoshi Oizumi ,  Satoru Naito ,  Akira Nakao ,  Tsuyoshi Shinozuka ,  Satoshi Matsui ,  Kousei Shimada

IPC分类号： A61K31/4365 ,  C07D513/04

CPC分类号： C07D495/04 ,  A61K31/4365 ,  A61K31/4545 ,  A61K31/4725 ,  A61K31/496 ,  A61K31/5377 ,  A61K31/541 ,  A61K31/55 ,  A61K31/551 ,  A61K31/553 ,  A61K31/554

摘要： [Problem to be Solved]The present invention provides a compound promoting osteogenesis. [Solution] The present invention provides a compound having the following general formula (I) wherein R1 is H or alkyl, R2 is RaS—, RaO—, RaNH—, Ra(Rb)N— or cyclic amino, and Ra and Rb are alkyl which may be substituted, cycloalkyl which may be substituted, or the like, or a pharmacologically acceptable salt thereof.

摘要翻译： [待解决的问题]本发明提供促进成骨的化合物。 [溶液]本发明提供具有以下通式（I）的化合物，其中R 1是H或烷基，R 2是R a，O （S），R a，O，R a，O，R a， 或环状氨基，R a和R b都为可被取代的烷基，可被取代的环烷基等，或其药学上可接受的盐。

公开(公告)号：US20130029964A1

公开(公告)日：2013-01-31

申请号：US13595608

申请日：2012-08-27

申请人： Kazumasa Aoki ,  Satoshi Matsui ,  Kenji Yoshikawa ,  Hiroki Shimizu ,  Junko Sasaki ,  Katsuyoshi Nakajima ,  Osamu Kanno ,  Kiyoshi Oizumi

发明人： Kazumasa Aoki ,  Satoshi Matsui ,  Kenji Yoshikawa ,  Hiroki Shimizu ,  Junko Sasaki ,  Katsuyoshi Nakajima ,  Osamu Kanno ,  Kiyoshi Oizumi

IPC分类号： A61K31/4184 ,  C07D471/04 ,  A61K31/437 ,  C07D235/14 ,  C07D401/10 ,  C07D413/10 ,  A61K31/5377 ,  C07D405/12 ,  C07D491/056 ,  A61K31/4188 ,  C07D403/10 ,  A61K31/496 ,  A61K31/506 ,  A61K31/454 ,  A61K31/4439 ,  A61P19/08 ,  A61P19/10 ,  C07D235/12

CPC分类号： C07D235/06 ,  A61K31/4184 ,  A61K31/4188 ,  A61K31/437 ,  A61K31/4439 ,  A61K31/454 ,  A61K31/496 ,  A61K31/506 ,  A61K31/5377 ,  C07D401/04 ,  C07D403/04 ,  C07D405/12 ,  C07D405/14 ,  C07D417/04 ,  C07D471/04 ,  C07D491/056

摘要： An object of the present invention is to provide a novel low molecular weight compound exhibiting an osteogenesis-promoting action. This object is achieved by a compound having the general formula (I) or a pharmacologically acceptable salt thereof. In the general formula (I), R1 and R2 represent hydrogen atoms, and the like; R3 represents a hydrogen atom, and the like; X, Y, and Z represent nitrogen atoms, and the like; A represents a phenylene group, and the like; n represents 1 or 2, and the like; and V and W represent oxygen atoms, and the like.

摘要翻译： 本发明的目的是提供一种表现出成骨促进作用的新型低分子量化合物。 该目的通过具有通式（I）的化合物或其药理学上可接受的盐来实现。 在通式（I）中，R 1和R 2表示氢原子等; R3表示氢原子等; X，Y和Z表示氮原子等; A表示亚苯基等; n表示1或2，等等; V和W表示氧原子等。

公开(公告)号：US08511272B2

公开(公告)日：2013-08-20

申请号：US12268257

申请日：2008-11-10

申请人： Kazuaki Koyama ,  Sumito Hori ,  Satoshi Matsui

发明人： Kazuaki Koyama ,  Sumito Hori ,  Satoshi Matsui

IPC分类号： F02B67/00

CPC分类号： F02B67/00 ,  F02F7/0068

摘要： A horizontal groove extending horizontally when an alternator bracket is fixed to a cylinder block of a vehicle engine is formed in the alternator bracket. A shank of a bolt inserted through mounting pieces of an alternator is inserted into the horizontal groove from a horizontally lateral direction toward the cylinder block to support the bolt on a lower surface of the horizontal groove. After insertion, the bolt is restrained from moving toward an opening of the horizontal groove. Since the insertion of the bolt into the horizontal groove is facilitated, and the weight of the alternator is borne by the lower surface of the horizontal groove, a burden on a fixing portion is reduced, and it becomes easy to position the alternator and hold it when it is fixed. Thus, the accessory can be mounted on the cylinder block with satisfactory work efficiency and with support accuracy kept high.

摘要翻译： 在交流发电机支架上形成有将交流发电机支架固定在车辆发动机的气缸体上时水平延伸的水平槽。 通过交流发电机的安装件插入的螺栓的柄部从水平方向朝向气缸体插入到水平槽中，以将螺栓支撑在水平槽的下表面上。 插入后，螺栓被限制向水平槽的开口移动。 由于容易将螺栓插入水平槽中，并且交流发电机的重量由水平槽的下表面承担，所以固定部分的负担减小，容易定位交流发电机并保持 当它是固定的。 因此，附件可以以令人满意的工作效率安装在气缸体上，并且支撑精度保持较高。

公开(公告)号：US20090302430A1

公开(公告)日：2009-12-10

申请号：US12477178

申请日：2009-06-03

申请人： Nobuaki Takahashi ,  Masahiro Komuro ,  Satoshi Matsui

发明人： Nobuaki Takahashi ,  Masahiro Komuro ,  Satoshi Matsui

IPC分类号： H01L23/48 ,  H01L21/768 ,  H01L21/3205

CPC分类号： H01L23/481 ,  H01L21/76898 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/05624 ,  H01L2224/05684 ,  H01L2224/13009 ,  H01L2224/131 ,  H01L2224/13562 ,  H01L2224/1357 ,  H01L2224/13644 ,  H01L2224/13664 ,  H01L2224/17181 ,  H01L2924/00014

摘要： In this semiconductor device, the through-hole is formed in the substrate, and is located under the conductive pattern. The insulating layer is located at the bottom surface of the through-hole. The conductive pattern is located on one surface side of the substrate. The opening pattern is formed in the insulating layer which is located between the through-hole and the conductive pattern, where the distance r3 from the circumference of the opening pattern to the central axis of the through-hole is smaller than the distance r1 in the through-hole. By providing the opening pattern, the conductive pattern is exposed at the bottom surface of the through-hole. The bump is located on the back surface side of the substrate, and is formed integrally with the through-electrode.

摘要翻译： 在该半导体装置中，通孔形成在基板上，位于导电图案的下方。 绝缘层位于通孔的底面。 导电图案位于基板的一个表面侧。 开口图案形成在位于通孔和导电图案之间的绝缘层中，其中从开口图案的周边到通孔的中心轴线的距离r3小于通孔中的距离r1 通孔。 通过设置开口图案，导电图案在通孔的底面露出。 凸块位于基板的背面侧，与贯通电极一体形成。

公开(公告)号：US20080222436A1

公开(公告)日：2008-09-11

申请号：US12043506

申请日：2008-03-06

申请人： Satoshi Matsui

发明人： Satoshi Matsui

IPC分类号： G06F1/32

CPC分类号： G06F1/26 ,  G06F1/32

摘要： A power supply voltage regulator circuit including a power supply circuit which switches to a first through a fourth state; the first state being the state wherein voltage is supplied to neither a normal circuit nor a backup system circuit based on the combination of logic for the normal circuit power control signal, the second state being the state wherein a primary power supply voltage is supplied to the normal circuit and a secondary power supply voltage is supplied to the backup system circuit, the third state being the state wherein voltage is not supplied to the normal circuit and the secondary power supply voltage is supplied to the backup system circuit, the fourth state being the state wherein the primary power supply voltage is supplied to both the normal circuit and the backup system circuit.

摘要翻译： 一种电源稳压器电路，包括切换到第一至第四状态的电源电路; 第一状态是基于用于正常电路功率控制信号的逻辑的组合而不向正常电路和备用系统电路供应电压的状态，第二状态是向第一状态提供主电源电压的状态 正常电路和次级电源电压被提供给备用系统电路，第三状态是其中电压不被提供给正常电路并且次级电源电压被提供给备用系统电路的状态，第四状态是 其中主电源电压被提供给正常电路和备用系统电路。

公开(公告)号：US20080048337A1

公开(公告)日：2008-02-28

申请号：US11842973

申请日：2007-08-22

申请人： Nobuaki TAKAHASHI ,  Masahiro Komuro ,  Koji Soejima ,  Satoshi Matsui ,  Masaya Kawano

发明人： Nobuaki TAKAHASHI ,  Masahiro Komuro ,  Koji Soejima ,  Satoshi Matsui ,  Masaya Kawano

IPC分类号： H01L29/40 ,  H01L21/44

CPC分类号： H01L21/76898 ,  H01L23/481 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/12 ,  H01L2224/0401 ,  H01L2224/05001 ,  H01L2224/0554 ,  H01L2224/06181 ,  H01L2224/1147 ,  H01L2224/11472 ,  H01L2224/11901 ,  H01L2224/13009 ,  H01L2224/13025 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/14181 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/04953 ,  H01L2924/10329 ,  H01L2924/00014

摘要： The present invention provides a semiconductor device including at least one of an insulating layer and a semiconductor layer each including a hole formed therein, and a through electrode provided in the hole. In the semiconductor device, the side wall of the hole is constituted of a first region from the opening of the hole to a predetermined position between the opening of the hole and the bottom surface of the hole, and a second region from the predetermined position to the bottom surface of the hole. The through electrode includes a seed layer and a plating layer. The seed layer covers the second region and the bottom surface of the hole without covering the first region. In addition, the plating layer covers the seed layer and at least a part of the first region.

摘要翻译： 本发明提供一种半导体器件，其包括绝缘层和各自包括形成在其中的孔的半导体层中的至少一个，以及设置在孔中的通孔。 在半导体装置中，孔的侧壁由从孔的开口到孔的开口部与孔的底面之间的规定位置的第一区域和从规定位置到第二区域 孔的底面。 通孔包括种子层和镀层。 种子层覆盖孔的第二区域和底部表面而不覆盖第一区域。 此外，电镀层覆盖种子层和第一区域的至少一部分。

公开(公告)号：US20070004084A1

公开(公告)日：2007-01-04

申请号：US11518274

申请日：2006-09-11

申请人： Satoshi Matsui

发明人： Satoshi Matsui

IPC分类号： H01L21/00 ,  H01L23/02

CPC分类号： H01L25/50 ,  H01L23/481 ,  H01L23/49827 ,  H01L23/49833 ,  H01L23/544 ,  H01L24/81 ,  H01L25/0657 ,  H01L2223/54473 ,  H01L2224/05573 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05666 ,  H01L2224/05684 ,  H01L2224/13025 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/17181 ,  H01L2224/81136 ,  H01L2224/81801 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2225/06593 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/30105 ,  Y10S438/975 ,  H01L2924/00 ,  H01L2924/00014

摘要： The chip for the multi-chip semiconductor device having the markings for alignment formed on the front surface and/or the back surface of the chip only by the processing from the front surface of the chip (photolithography, etch) and the method for manufacturing same are presented, without adding any dedicated process step to the formation process for the marking for alignment. In the chip for the multi-chip semiconductor device having two or more electroconductive through plug in one chip for the multi-chip semiconductor device, one or more electroconductive through plugs are employed for the marking for alignment, and the chip is configured to allow identification of the marking for alignment on the front surface and/or the back surface of the chip for the multi-chip semiconductor device. Then, an insulating film is provided on the front surface and/or the back surface of the electrically conducting through plug.

摘要翻译： 仅通过从芯片的前表面（光刻，蚀刻）的处理及其制造方法的仅在芯片的前表面和/或后表面上形成的用于对准的标记的多芯片半导体器件的芯片 而不需要为对准标记的形成过程添加任何专门的工艺步骤。 在具有用于多芯片半导体器件的一个芯片中具有两个或多个导电贯穿插头的多芯片半导体器件的芯片中，采用一个或多个导电通孔用于对准的标记，并且芯片被配置为允许识别 用于在用于多芯片半导体器件的芯片的前表面和/或背表面上对准的标记。 然后，在导电贯通插头的前表面和/或后表面上设置绝缘膜。

公开(公告)号：US20060118965A1

公开(公告)日：2006-06-08

申请号：US11290433

申请日：2005-12-01

申请人： Satoshi Matsui

发明人： Satoshi Matsui

IPC分类号： H01L23/48

CPC分类号： H01L23/481 ,  H01L25/0657 ,  H01L2224/0554 ,  H01L2224/05573 ,  H01L2224/13025 ,  H01L2224/16 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/00014 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/12044 ,  H01L2924/15311 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： The layout density of the through electrodes in the horizontal plane of the substrate is enhanced. Through holes 103 extending through the silicon substrate 101 is provided. An insulating film 105 is buried within the through hole 103. A plurality of columnar through plugs 107 are provided in the insulating film 105.

摘要翻译： 衬底的水平面中的贯通电极的配置密度提高。 提供延伸穿过硅衬底101的通孔103。 绝缘膜105被埋在通孔103内。绝缘膜105中设有多个柱状贯通插头107。

公开(公告)号：US20050252463A1

公开(公告)日：2005-11-17

申请号：US11125143

申请日：2005-05-10

申请人： Satoshi Matsui ,  Toshihiko Oka ,  Koichi Yoshimoto ,  Yoshinori Sakurai ,  Tetsushi Nagira ,  Kenichi Morishima

发明人： Satoshi Matsui ,  Toshihiko Oka ,  Koichi Yoshimoto ,  Yoshinori Sakurai ,  Tetsushi Nagira ,  Kenichi Morishima

IPC分类号： F02F1/38 ,  F01P3/02 ,  F02B31/00 ,  F02F1/24 ,  F02F1/26 ,  F02F1/36 ,  F02F1/40 ,  F02F1/42

CPC分类号： F02F1/40 ,  F02B31/00

摘要： The bottom surface 18 of the cylinder head 10 is formed by an intake-side bottom surface 18a and an exhaust-side bottom surface 18b on which an intake port 13 and an exhaust port 15 are formed respectively. Further, a first wall 19 formed between an intake-side water jacket 16 and the intake-side bottom surface 18a is larger in thickness than a second wall 20 formed between an exhaust-side water jacket 17 and the exhaust-side bottom surface 18b. This structure can reduce an amount of HC included in exhaust gas.

摘要翻译： 气缸盖10的底表面18由分别形成有进气口13和排气口15的进气侧底面18a和排气侧底面18b形成。 此外，形成在进气侧水套16和进气侧底面18a之间的第一壁19的厚度大于形成在排气侧水套17和排气侧底面18之间的第二壁20 b。 该结构可以减少废气中包含的HC的量。

公开(公告)号：US20050182885A1

公开(公告)日：2005-08-18

申请号：US10898339

申请日：2004-07-26

申请人： Satoshi Matsui ,  Seiji Suetake

发明人： Satoshi Matsui ,  Seiji Suetake

IPC分类号： G06F12/04 ,  G06F13/16 ,  G06F13/40

CPC分类号： G06F13/1678 ,  G06F13/4018

摘要： A data controlling unit activates a predetermined number of data terminals according to a mode signal and changes a bus width of external data signal. According to the mode signal, an address controlling unit selects a predetermined number of bits of an internal address signal outputted from a controller and outputs the selected bits as an external address signal. Specifically, the address controlling unit selects upper bits of the internal address signal when the bus width of the external data signal is increased according to the mode signal. Therefore, it is possible to prevent occurrence of an unused external address terminal, enabling the increase in accessible external memory capacity.

摘要翻译： 数据控制单元根据模式信号激活预定数量的数据终端并改变外部数据信号的总线宽度。 根据模式信号，地址控制单元选择从控制器输出的内部地址信号的预定数量的比特，并将所选择的比特输出为外部地址信号。 具体地说，当根据模式信号增加外部数据信号的总线宽度时，地址控制单元选择内部地址信号的高位。 因此，可以防止未使用的外部地址端子的发生，从而能够增加可访问的外部存储器容量。