公开(公告)号：US20060180945A1

公开(公告)日：2006-08-17

申请号：US11402777

申请日：2006-04-12

申请人： Krishna Seshan ,  Kevin Jeng ,  Haiping Dun

发明人： Krishna Seshan ,  Kevin Jeng ,  Haiping Dun

IPC分类号： H01L23/48

CPC分类号： H01L24/05 ,  H01L24/03 ,  H01L24/48 ,  H01L2224/04042 ,  H01L2224/05073 ,  H01L2224/05187 ,  H01L2224/05553 ,  H01L2224/05558 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05666 ,  H01L2224/48463 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01057 ,  H01L2924/01079 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/01081 ,  H01L2224/45099

摘要： In one embodiment, the present invention includes an apparatus having a metal layer with a pad disposed above a substrate; and a cap disposed above the metal layer having a first portion to provide for contact with a probe and a second portion to provide a bonding surface, and the cap is electrically coupled to the pad.

摘要翻译： 在一个实施例中，本发明包括具有金属层的装置，其中衬垫设置在衬底之上; 以及设置在所述金属层上方的帽，其具有第一部分以提供与探针和第二部分接触以提供接合表面，并且所述帽电耦合到所述垫。

公开(公告)号：US07056817B2

公开(公告)日：2006-06-06

申请号：US10300253

申请日：2002-11-20

申请人： Krishna Seshan ,  Kevin Jeng ,  Haiping Dun

发明人： Krishna Seshan ,  Kevin Jeng ,  Haiping Dun

IPC分类号： H01L21/44

CPC分类号： H01L24/05 ,  H01L24/03 ,  H01L24/48 ,  H01L2224/04042 ,  H01L2224/05073 ,  H01L2224/05187 ,  H01L2224/05553 ,  H01L2224/05558 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05666 ,  H01L2224/48463 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01057 ,  H01L2924/01079 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/01081 ,  H01L2224/45099

摘要： In one embodiment, the present invention includes an apparatus having a metal layer with a pad disposed above a substrate; and a cap disposed above the metal layer having a first portion to provide for contact with a probe and a second portion to provide a bonding surface, and the cap is electrically coupled to the pad.

公开(公告)号：US07960831B2

公开(公告)日：2011-06-14

申请号：US11840269

申请日：2007-08-17

申请人： Fay Hua ,  Albert T. Wu ,  Kevin Jeng ,  Krishna Seshan

发明人： Fay Hua ,  Albert T. Wu ,  Kevin Jeng ,  Krishna Seshan

IPC分类号： H01L23/48

CPC分类号： H01L24/16 ,  H01L21/563 ,  H01L24/03 ,  H01L24/11 ,  H01L2224/0401 ,  H01L2224/05027 ,  H01L2224/05572 ,  H01L2224/13099 ,  H01L2224/16225 ,  H01L2224/16507 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01072 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15311 ,  Y10T29/49144 ,  Y10T29/49179 ,  H01L2924/00014 ,  H01L2224/05552 ,  H01L2924/00

摘要： A ball-limiting metallurgy (BLM) stack is provided for an electrical device. The BLM stack resists tin migration toward the metallization of the device. A solder system is also provided that includes a eutectic-Pb solder on a substrate that is mated to a high-Pb solder, and that withstands higher temperature reflows and other higher temperature processes.

摘要翻译： 为电气设备提供了限流冶金（BLM）堆叠。 BLM堆叠抵抗锡朝向器件的金属化迁移。 还提供了一种焊料系统，其包括与高Pb焊料配合的衬底上的共晶Pb焊料，并且能够承受更高的温度回流和其它更高温度的工艺。

公开(公告)号：US07314819B2

公开(公告)日：2008-01-01

申请号：US11173238

申请日：2005-06-30

申请人： Fay Hua ,  Albert T. Wu ,  Kevin Jeng ,  Krishna Seshan

发明人： Fay Hua ,  Albert T. Wu ,  Kevin Jeng ,  Krishna Seshan

IPC分类号： H01L21/44 ,  H05K3/34

CPC分类号： H01L24/16 ,  H01L21/563 ,  H01L24/03 ,  H01L24/11 ,  H01L2224/0401 ,  H01L2224/05027 ,  H01L2224/05572 ,  H01L2224/13099 ,  H01L2224/16225 ,  H01L2224/16507 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01072 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15311 ,  Y10T29/49144 ,  Y10T29/49179 ,  H01L2924/00014 ,  H01L2224/05552 ,  H01L2924/00

摘要： A ball-limiting metallurgy (BLM) stack is provided for an electrical device. The BLM stack resists tin migration toward the metallization of the device. A solder system is also provided that includes a eutectic-Pb solder on a substrate that is mated to a high-Pb solder, and that withstands higher temperature reflows and other higher temperature processes.

摘要翻译： 为电气设备提供了限流冶金（BLM）堆叠。 BLM堆叠抵抗锡朝向器件的金属化迁移。 还提供了一种焊料系统，其包括与高Pb焊料配合的衬底上的共晶Pb焊料，并且能够承受更高的温度回流和其它更高温度的工艺。

公开(公告)号：US20070284741A1

公开(公告)日：2007-12-13

申请号：US11840269

申请日：2007-08-17

申请人： Fay Hua ,  Albert Wu ,  Kevin Jeng ,  Krishna Seshan

发明人： Fay Hua ,  Albert Wu ,  Kevin Jeng ,  Krishna Seshan

IPC分类号： H01L23/48

CPC分类号： H01L24/16 ,  H01L21/563 ,  H01L24/03 ,  H01L24/11 ,  H01L2224/0401 ,  H01L2224/05027 ,  H01L2224/05572 ,  H01L2224/13099 ,  H01L2224/16225 ,  H01L2224/16507 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01072 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15311 ,  Y10T29/49144 ,  Y10T29/49179 ,  H01L2924/00014 ,  H01L2224/05552 ,  H01L2924/00

摘要： A ball-limiting metallurgy (BLM) stack is provided for an electrical device. The BLM stack resists tin migration toward the metallization of the device. A solder system is also provided that includes a eutectic-Pb solder on a substrate that is mated to a high-Pb solder, and that withstands higher temperature reflows and other higher temperature processes.

摘要翻译： 为电气设备提供了限流冶金（BLM）堆叠。 BLM堆叠抵抗锡朝向器件的金属化迁移。 还提供了一种焊料系统，其包括与高Pb焊料配合的衬底上的共晶Pb焊料，并且能够承受更高的温度回流和其它更高温度的工艺。

公开(公告)号：US20070004086A1

公开(公告)日：2007-01-04

申请号：US11173238

申请日：2005-06-30

申请人： Fay Hua ,  Albert Wu ,  Kevin Jeng ,  Krishna Seshan

发明人： Fay Hua ,  Albert Wu ,  Kevin Jeng ,  Krishna Seshan

IPC分类号： H01L21/00

CPC分类号： H01L24/16 ,  H01L21/563 ,  H01L24/03 ,  H01L24/11 ,  H01L2224/0401 ,  H01L2224/05027 ,  H01L2224/05572 ,  H01L2224/13099 ,  H01L2224/16225 ,  H01L2224/16507 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01072 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15311 ,  Y10T29/49144 ,  Y10T29/49179 ,  H01L2924/00014 ,  H01L2224/05552 ,  H01L2924/00

摘要： A ball-limiting metallurgy (BLM) stack is provided for an electrical device. The BLM stack resists tin migration toward the metallization of the device. A solder system is also provided that includes a eutectic-Pb solder on a substrate that is mated to a high-Pb solder, and that withstands higher temperature reflows and other higher temperature processes.

摘要翻译： 为电气设备提供了限流冶金（BLM）堆叠。 BLM堆叠抵抗锡朝向器件的金属化迁移。 还提供了一种焊料系统，其包括与高Pb焊料配合的衬底上的共晶Pb焊料，并且能够承受更高的温度回流和其它更高温度的工艺。

公开(公告)号：US07425458B2

公开(公告)日：2008-09-16

申请号：US11184521

申请日：2005-07-19

申请人： Krishna Seshan

发明人： Krishna Seshan

IPC分类号： H01L23/48 ,  H01L23/52

CPC分类号： G01R31/31718 ,  G01R31/31723 ,  H01L23/50 ,  H01L23/5382 ,  H01L24/10 ,  H01L24/13 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05572 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2224/16 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01022 ,  H01L2924/01027 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01057 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15174 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/05099

摘要： Selectable capacitors are used to modify performance characteristics of functional circuit elements of an integrated circuit (IC). In an embodiment, the decoupling capacitors are implemented as additional or alternative mounting pads on a surface of the IC. At least one selectable capacitor is provided for each IC circuit element, such as a logic network, whose operational characteristic(s) is predicted to be and is actually identified as sub-optimal through IC testing, particularly following a process change, a mask shrink, operation of the IC at higher clock frequency, or the like. Expensive redesign is avoided by selectively coupling capacitors into the IC circuit element as needed, under control of selector logic that is responsive to control signals. Methods of operation, as well as application of the apparatus to an electronic assembly and an electronic system, are also described.

摘要翻译： 可选择的电容器用于修改集成电路（IC）的功能电路元件的性能特征。 在一个实施例中，去耦电容器被实现为IC表面上的附加或替代的安装焊盘。 为每个IC电路元件（例如逻辑网络）提供至少一个可选择的电容器，其逻辑网络的操作特性被预测为并且实际上通过IC测试被识别为次优，特别是在过程变化之后，掩模收缩 ，在较高时钟频率下操作IC等。 在根据控制信号响应的选择器逻辑的控制下，通过选择性地将电容器耦合到IC电路元件中来避免昂贵的重新设计。 还描述了操作方法以及将装置应用于电子组件和电子系统。

公开(公告)号：US20070013023A1

公开(公告)日：2007-01-18

申请号：US11525982

申请日：2006-09-22

申请人： Qing Ma ,  Jin Lee ,  Harry Fujimoto ,  Changhong Dai ,  Shiuh-Wuu Lee ,  Travis Eiles ,  Krishna Seshan

发明人： Qing Ma ,  Jin Lee ,  Harry Fujimoto ,  Changhong Dai ,  Shiuh-Wuu Lee ,  Travis Eiles ,  Krishna Seshan

IPC分类号： H01L29/00

CPC分类号： H01L29/7842 ,  H01L21/76224 ,  H01L29/7846 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2924/13091 ,  H01L2924/00014 ,  H01L2924/00

摘要： An apparatus and methods for modifying isolation structure configurations for MOS devices to either induce or reduce tensile and/or compressive stresses on an active area of the MOS devices. The isolation structure configurations according to the present invention include the use of low-modulus and high-modulus, dielectric materials, as well as, tensile stress-inducing and compressive stress-inducing, dielectric materials, and further includes altering the depth of the isolation structure and methods for modifying isolation structure configurations, such as trench depth and isolation materials used, to modify (i.e., to either induce or reduce) tensile and/or compressive stresses on an active area of a semiconductor device.

摘要翻译： 一种用于修改MOS器件的隔离结构配置以诱导或减小MOS器件的有源区上的拉伸和/或压缩应力的装置和方法。 根据本发明的隔离结构构造包括使用低模量和高模量介电材料以及拉伸应力诱导和压应力诱导介电材料，还包括改变隔离深度 用于改变隔离结构构造的结构和方法，例如使用的沟槽深度和隔离材料，以修饰（即，诱发或减少）半导体器件的有源区域上的拉伸和/或压缩应力。

公开(公告)号：US06937458B2

公开(公告)日：2005-08-30

申请号：US10726050

申请日：2003-12-02

申请人： Krishna Seshan

发明人： Krishna Seshan

IPC分类号： H01L23/50 ,  H01L23/538 ,  H01L23/58 ,  H01G4/10

CPC分类号： G01R31/31718 ,  G01R31/31723 ,  H01L23/50 ,  H01L23/5382 ,  H01L24/10 ,  H01L24/13 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05572 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2224/16 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01022 ,  H01L2924/01027 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01057 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15174 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/05099

摘要： Selectable capacitors are used to modify performance characteristics of functional circuit elements of an integrated circuit (IC). In one embodiment, the decoupling capacitors are implemented as additional or alternative mounting pads on a surface of the IC. At least one selectable capacitor is provided for each IC circuit element, such as a logic network, whose operational characteristic(s) is predicted to be and is actually identified as sub-optimal through IC testing, particularly following a process change, a mask shrink, operation of the IC at higher clock frequency, or the like. Expensive redesign is avoided by selectively coupling capacitors into the IC circuit element as needed, under control of selector logic that is responsive to control signals. Methods of operation, as well as application of the apparatus to an electronic assembly and an electronic system, are also described.

摘要翻译： 可选择的电容器用于修改集成电路（IC）的功能电路元件的性能特征。 在一个实施例中，去耦电容器被实现为IC表面上的附加或替代安装焊盘。 为每个IC电路元件（例如逻辑网络）提供至少一个可选择的电容器，其逻辑网络的操作特性被预测为并通过IC测试被实际识别为次优，特别是在过程变化之后，掩模收缩 ，在较高时钟频率下操作IC等。 在根据控制信号响应的选择器逻辑的控制下，通过选择性地将电容器耦合到IC电路元件中来避免昂贵的重新设计。 还描述了操作方法以及将装置应用于电子组件和电子系统。

公开(公告)号：US20050158980A1

公开(公告)日：2005-07-21

申请号：US11056324

申请日：2005-02-10

申请人： Krishna Seshan

发明人： Krishna Seshan

IPC分类号： H01L23/485 ,  H01L21/44

CPC分类号： H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/0401 ,  H01L2224/05017 ,  H01L2224/05551 ,  H01L2224/05557 ,  H01L2224/05578 ,  H01L2224/13099 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01051 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01076 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15787 ,  H01L2924/30107 ,  H01L2924/00

摘要： The present invention discloses a novel layout and process for a device with segmented BLM for the I/Os. In a first embodiment, each BLM is split into two segments. The segments are close to each other and connected to the same overlying bump. In a second embodiment, each BLM is split into more than two segments. In a third embodiment, each segment is electrically connected to more than one underlying via. In a fourth embodiment, each segment is electrically connected to more than one underlying bond pad.

摘要翻译： 本发明公开了一种用于I / O的具有分段BLM的设备的新颖布局和过程。 在第一实施例中，每个BLM被分成两个段。 这些片段彼此靠近并连接到相同的上覆凸起。 在第二实施例中，每个BLM被分成多于两个段。 在第三实施例中，每个段电连接到多于一个的底层通孔。 在第四实施例中，每个段电连接到多于一个的底层接合焊盘。