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    Hollow RF feed with coaxial DC power feed
    2.
    发明授权
    Hollow RF feed with coaxial DC power feed 有权

    公开(公告)号：US10153136B2

    公开(公告)日：2018-12-11

    申请号：US14817372

    申请日：2015-08-04

    Applicant: Lam Research Corporation

    Inventor： Jason Augustino ,  John Drewery ,  Alex Paterson ,  Neil Benjamin

    IPC: H01J37/32 ,  H01P3/06

    Abstract: A feed tube for a substrate processing system includes an outer tube and a feed rod. The feed rod is arranged within the outer tube. The feed rod is arranged to provide radio frequency power to the substrate processing system and the outer tube provides a return for the radio frequency power. At least one conductor is routed within the feed rod. The conductor is arranged to provide electrical power to at least one component of the substrate processing system separate from the radio frequency power provided by the feed rod.

    Multiplexed heater array using AC drive for semiconductor processing
    3.
    发明授权
    Multiplexed heater array using AC drive for semiconductor processing 有权

    公开(公告)号：US09775194B2

    公开(公告)日：2017-09-26

    申请号：US15070919

    申请日：2016-03-15

    Applicant: Lam Research Corporation

    Inventor： John Pease ,  Neil Benjamin

    IPC: H05B3/68 ,  H05B1/02 ,  H01L21/67 ,  H01L21/683 ,  H05B3/26

    CPC classification number: H05B1/0233 ,  H01L21/67103 ,  H01L21/6831 ,  H05B3/26

    Abstract: A heating plate for a substrate support assembly in a semiconductor plasma processing apparatus, comprises multiple independently controllable heater zones arranged in a scalable multiplexing layout, and electronics to independently control and power the heater zones. A substrate support assembly in which the heating plate is incorporated includes an electrostatic clamping electrode and a temperature controlled base plate. Methods for manufacturing the heating plate include bonding together ceramic or polymer sheets having heater zones, branch transmission lines, common transmission lines and vias. The heating plate is capable of being driven by AC current or direct current phase alternating power, which has an advantage of minimizing DC magnetic field effects above the substrate support assembly and reduce plasma non-uniformity caused by DC magnetic fields.

    HYBRID EDGE RING FOR PLASMA WAFER PROCESSING
    7.
    发明申请
    HYBRID EDGE RING FOR PLASMA WAFER PROCESSING 有权
    用于等离子体加工的混合边缘环

    公开(公告)号：US20140235063A1

    公开(公告)日：2014-08-21

    申请号：US14175509

    申请日：2014-02-07

    Applicant: Lam Research Corporation

    Inventor： Brian McMillin ,  Arthur Sato ,  Neil Benjamin

    IPC: H01L21/67 ,  H01L21/3065 ,  H01J37/32

    CPC classification number: H01L21/67069 ,  H01J37/32009 ,  H01J37/32082 ,  H01J37/32642 ,  H01L21/3065 ,  H01L21/30655 ,  H01L21/76898

    Abstract: An edge ring assembly is disclosed for use in a plasma processing chamber, which includes an RF conductive ring positioned on an annular surface of a base plate and configured to surround an upper portion of the baseplate and extend underneath an outer edge of a wafer positioned on the upper surface of the baseplate, and a wafer edge protection ring positioned above an upper surface of the RF conductive ring and configured to extend over the outer edge of the wafer. The protection ring has an inner edge portion with a uniform thickness, which extends over the outer edge of the wafer, a conical upper surface extending outward from the inner edge portion to a horizontal upper surface, an inner annular recess which is positioned on the upper surface of the RF conductive and configured to extend over the outer edge of the wafer.

    Abstract translation: 公开了用于等离子体处理室中的边缘环组件，其包括定位在基板的环形表面上的RF导电环，并且被配置为围绕基板的上部并且延伸到位于基板上的晶片的外边缘下方 基板的上表面，以及晶片边缘保护环，其位于RF导电环的上表面上方并且被配置为在晶片的外边缘上延伸。 保护环具有均匀厚度的内边缘部分，其在晶片的外边缘延伸，从内边缘部分向外延伸到水平上表面的圆锥形上表面，位于上部的内部环形凹部 RF的表面导电并且构造成在晶片的外边缘上延伸。

    POWER SWITCHING SYSTEM FOR ESC WITH ARRAY OF THERMAL CONTROL ELEMENTS
    8.
    发明申请
    POWER SWITCHING SYSTEM FOR ESC WITH ARRAY OF THERMAL CONTROL ELEMENTS 审中-公开
    用于具有热控制元件阵列的ESC的电源开关系统

    公开(公告)号：US20140154819A1

    公开(公告)日：2014-06-05

    申请号：US13690745

    申请日：2012-11-30

    Applicant: LAM RESEARCH CORPORATION

    Inventor： Keith William Gaff ,  Tom Anderson ,  Keith Comendant ,  Ralph Jan-Pin Lu ,  Paul Robertson ,  Eric A. Pape ,  Neil Benjamin

    IPC: H01L21/3065

    CPC classification number: H01L22/14 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/67248 ,  H01L21/6831 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A semiconductor substrate support for supporting a semiconductor substrate in a plasma processing chamber includes a heater array comprising thermal control elements operable to tune a spatial temperature profile on the semiconductor substrate, the thermal control elements defining heater zones each of which is powered by two or more power supply lines and two or more power return lines wherein each power supply line is connected to at least two of the heater zones and each power return line is connected to at least two of the heater zones. A power distribution circuit is mated to a baseplate of the substrate support, the power distribution circuit being connected to each power supply line and power return line of the heater array. A switching device is connected to the power distribution circuit to independently provide time-averaged power to each of the heater zones by time divisional multiplexing of a plurality of switches.

    Abstract translation: 用于在等离子体处理室中支撑半导体衬底的半导体衬底支撑件包括加热器阵列，其包括用于调节半导体衬底上的空间温度分布的热控制元件，热控制元件限定加热器区域，每个加热器区域由两个或更多个 电源线和两个或更多个电力返回线，其中每个电源线连接到至少两个加热器区域，并且每个电力返回线路连接到至少两个加热器区域。 配电电路配合到基板支架的基板上，配电电路连接到加热器阵列的每个电源线和电源返回线。 开关装置连接到配电电路，以通过多个开关的时分复用来独立地为每个加热器区提供时间平均功率。

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