公开(公告)号：US4872010A

公开(公告)日：1989-10-03

申请号：US153750

申请日：1988-02-08

申请人： Lawrence E. Larson ,  Joseph F. Jensen ,  Robert H. Walden ,  Adele E. Schmitz

发明人： Lawrence E. Larson ,  Joseph F. Jensen ,  Robert H. Walden ,  Adele E. Schmitz

IPC分类号： H01L21/265 ,  H01L27/12 ,  H01L29/06 ,  H01L29/78 ,  H01L29/786 ,  H03M1/00 ,  H03M1/36

CPC分类号： H01L29/78696 ,  H01L27/12 ,  H01L29/0692 ,  H01L29/7838 ,  H01L29/78612 ,  H01L29/78657 ,  H03M1/361

摘要： An analog-to-digital converter 10 employs a series of comparators 12, 14, 16 and 18. Each comparator includes at least one inverter consisting of a CMOS transistor pair including a P-channel transistor 22 and N-channel transistor 24. The threshold levels of the transistors 22, 24 are modified using focused ion beam implantation techniques to provide the comparators with monotonically increasing transistion levels.

摘要翻译： 模拟 - 数字转换器10采用一系列比较器12,14,16和18.每个比较器包括至少一个由包括P沟道晶体管22和N沟道晶体管24的CMOS晶体管对组成的反相器。阈值 使用聚焦离子束注入技术来修改晶体管22,24的电平，以使比较器具有单调递增的电流电平。

公开(公告)号：US06316342B1

公开(公告)日：2001-11-13

申请号：US09640458

申请日：2000-08-15

申请人： Adele E. Schmitz ,  Robert H. Walden ,  Mark Lui ,  Mark K. Yu

发明人： Adele E. Schmitz ,  Robert H. Walden ,  Mark Lui ,  Mark K. Yu

IPC分类号： H01L2100

CPC分类号： H01L29/155 ,  H01L29/475 ,  H01L29/872

摘要： A Schottky diode, and a method of making the same, which is fabricated on InP material and employs a Schottky layer including InxAl1−xAS with x>0.6, or else including a chirped graded superlattice in which successive periods of the superlattice contain progressively less GaInAs and progressively more AlInAs, the increase in AlInAs being terminated before the proportion of AlInAs within the last period (adjacent the anode metal) exceeds 80%. Such fabrication creates an InP-based Schottky diode having a low turn-on voltage which may be predictably set within a range by adjusting the fabrication parameters

摘要翻译： 肖特基二极管及其制造方法，其制造在InP材料上并且采用包括x> 0.6的In x Al 1-xAS​​的肖特基层，或者包括啁啾分级超晶格，其中超晶格的连续周期包含逐渐减少的GaInAs 并且逐渐增加AlInAs，AlInAs在上一期（邻近阳极金属）的比例超过80％之前终止的AlInAs的增加。 这种制造产生了具有低导通电压的基于InP的肖特基二极管，其可以通过调整制造参数来预测地设置在一个范围内

公开(公告)号：US06380552B2

公开(公告)日：2002-04-30

申请号：US09322260

申请日：1999-05-28

申请人： Adele E. Schmitz ,  Robert H. Walden ,  Mark Lui ,  Mark K. Yu

发明人： Adele E. Schmitz ,  Robert H. Walden ,  Mark Lui ,  Mark K. Yu

IPC分类号： H01L2906

CPC分类号： H01L29/155 ,  H01L29/475 ,  H01L29/872

摘要： A Schottky diode, and a method of making the same, which is fabricated on InP material and employs a Schottky layer including InxAl1−xAs with x>0.6, or else including a chirped graded supperlattice in which successive periods of the superlattice contain progressively less GaInAs and progressively more AlInAs, the increase in AlInAs being terminated before the proportion of AlInAs within the last period (adjacent the anode metal) exceeds 80%. Such fabrication creates an InP-based Schottky diode having a low turn-on voltage which may be predictably set within a range by adjusting the fabrication parameters.

摘要翻译： 肖特基二极管及其制造方法，其制造在InP材料上，并采用包括x> 0.6的In x Al 1-x As的肖特基层，或者包括啁啾分级超晶格，其中超晶格的连续周期含有逐渐减少的GaInAs 并且逐渐增加AlInAs，AlInAs在上一期（邻近阳极金属）的比例超过80％之前终止的AlInAs的增加。 这种制造产生具有低导通电压的基于InP的肖特基二极管，其可以通过调整制造参数在一定范围内可预测地设置。

公开(公告)号：US07280015B1

公开(公告)日：2007-10-09

申请号：US11006426

申请日：2004-12-06

申请人： James H. Schaffner ,  Tsung-Yuan Hsu ,  Adele E. Schmitz ,  Hui-Pin Hsu

发明人： James H. Schaffner ,  Tsung-Yuan Hsu ,  Adele E. Schmitz ,  Hui-Pin Hsu

IPC分类号： H01H51/22

CPC分类号： H01H59/0009 ,  H01H2001/0047 ,  H01H2059/0054

摘要： Apparatus for a micro-electro-mechanical switch that provides single pole, double throw switching action. The switch has two input lines and two output lines. The switch has a seesaw cantilever arm with contacts at each end that electrically connect the input lines with the output lines. The cantilever arm is latched into position by frictional forces between structures on the cantilever arm and structures on the substrate in which the cantilever arm is disposed. The state of the switch is changed by applying an electrostatic force at one end of the cantilever arm to overcome the mechanical force holding the other end of the cantilever arm in place.

摘要翻译： 用于微机电开关的装置，其提供单极双掷切换动作。 开关有两条输入线和两条输出线。 开关具有跷跷板悬臂，每端具有触点，将输入线与输出线电连接。 悬臂由于悬臂上的结构与设置有悬臂的基板上的结构之间的摩擦力而被锁定到位。 通过在悬臂的一端施加静电力来克服将悬臂的另一端保持就位的机械力来改变开关的状态。

公开(公告)号：US06504235B2

公开(公告)日：2003-01-07

申请号：US09876538

申请日：2001-06-06

申请人： Adele E. Schmitz ,  Julia J. Brown

发明人： Adele E. Schmitz ,  Julia J. Brown

IPC分类号： H01L2358

CPC分类号： H01L23/3171 ,  H01L2924/0002 ,  H01L2924/13063 ,  H01L2924/00

摘要： A semiconductor passivation technique uses a plasma enhanced chemical vapor deposition (PECVD) process to produce a silicon-rich nitride film as a passivation layer on a Group III-V semiconductor device. The silicon-rich film has a nitrogen to silicon ratio of about 0.7, has a relatively high index of refraction of, for example, approximately 2.4, is compressively stressed, and is very low in hydrogen and oxygen content.

摘要翻译： 半导体钝化技术使用等离子体增强化学气相沉积（PECVD）工艺在III-V族半导体器件上产生富硅氮化物膜作为钝化层。 富含硅的膜的氮与硅的比例约为0.7，具有相对高的折射率，例如约2.4，是压缩应力，并且氢和氧含量非常低。

公开(公告)号：US07348864B2

公开(公告)日：2008-03-25

申请号：US10856106

申请日：2004-05-28

申请人： Debabani Choudhury ,  Adele E. Schmitz

发明人： Debabani Choudhury ,  Adele E. Schmitz

IPC分类号： H01P5/02 ,  H01P1/00

CPC分类号： H01L23/66 ,  H01L2223/6677 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01P5/107 ,  Y10T29/49016 ,  Y10T29/4913 ,  Y10T29/49155 ,  Y10T29/49789 ,  H01L2924/00

摘要： An integrated circuit module comprising integrated coupling transmission structures protruding from the main body of the integrated circuit with extra substrate material removed around and/or under the coupling transmission structures.

摘要翻译： 一种集成电路模块，包括从集成电路的主体突出的集成耦合传输结构，并且在耦合传输结构周围和/或下方移除额外的基板材料。

公开(公告)号：US07653985B1

公开(公告)日：2010-02-02

申请号：US11823443

申请日：2007-06-27

申请人： David T. Chang ,  James H. Schaffner ,  Tsung-Yuan Hsu ,  Adele E. Schmitz

发明人： David T. Chang ,  James H. Schaffner ,  Tsung-Yuan Hsu ,  Adele E. Schmitz

IPC分类号： H01H11/00 ,  H01H65/00

CPC分类号： H01H59/0009 ,  H01H2001/0068 ,  Y10T29/49105 ,  Y10T29/49117 ,  Y10T29/49155 ,  Y10T29/49204

摘要： Disclosed are methods for fabricating a micro-electro-mechanical switch. The switch has a cantilever arm disposed on a substrate that can be moved in orthogonal directions for latching and unlatching. For latching, the cantilever arm is moved back by a comb-drive actuator and then pulled down by electrodes disposed on the substrate and the cantilever arm. The comb-drive actuator switch is then released and the cantilever arm moves forward to be captured by a dove-tail structure on the substrate. When the voltage is removed, the cantilever arm is held in place by the dove-tail structure. The switch is unlatched by actuating the comb-drive actuator to move the cantilever arm away from the dove-tail structure. The cantilever arm will then pop up once it is released from the dove-tail structure.

摘要翻译： 公开了用于制造微机电开关的方法。 开关具有设置在基板上的悬臂，该悬臂可以沿正交方向移动以锁定和解锁。 为了锁定，悬臂由梳驱动致动器向后移动，然后由设置在基板和悬臂上的电极拉下。 然后梳梳驱动致动器开关被释放，并且悬臂臂向前移动以通过基板上的鸽尾结构捕获。 当电压被去除时，悬臂由鸠尾结构保持在适当位置。 通过启动梳齿驱动执行机构将悬臂移动离开鸽尾结构，开关被解锁。 一旦从鸽尾结构中释放出来，悬臂就会弹出。

公开(公告)号：US4973544A

公开(公告)日：1990-11-27

申请号：US320208

申请日：1989-03-07

申请人： Charles W. Slayman ,  Robert A. Metzger ,  Adele E. Schmitz

发明人： Charles W. Slayman ,  Robert A. Metzger ,  Adele E. Schmitz

IPC分类号： G03F7/09 ,  H01L21/027 ,  H01L21/033

CPC分类号： G03F7/094 ,  H01L21/0271 ,  H01L21/033

摘要： The tone or polarity of a patterned layer such as a photoresist mask on an integrated circuit or device substrate is reversed with substantially perfect alignment. A liquid planarizing layer is formed and hardened onto the patterned layer and underlying substrate, filling in spaces between pattern areas. The planarizing layer is then etched to a sufficient depth to expose the patterned layer. Finally, the patterned layer is dissolved away, leaving the reversed tone image which is constituted by the planarizing material in the spaces which were filled in. Modified embodiments enable large spaces between original pattern areas to be effectively reversed, and multi-level reversed tone images to be formed in which the reversed tone layers are thicker than the original layers.

摘要翻译： 集成电路或器件衬底上的诸如光致抗蚀剂掩模的图案层的色调或极性基本上完美对准地反转。 形成液体平坦化层并硬化到图案化层和下面的基底上，填充图案区域之间的空间。 然后将平坦化层蚀刻到足够的深度以暴露图案化层。 最后，图案化层被溶解掉，留下由填充的空间中的平面化材料构成的反向色调图像。修改的实施例能够使原始图案区域之间的大空间被有效地反转，并且多级反转色调图像 形成反转色调层比原始层厚的层。

公开(公告)号：US07253709B1

公开(公告)日：2007-08-07

申请号：US10961732

申请日：2004-10-07

申请人： David T. Chang ,  James H. Schaffner ,  Tsung-Yuan Hsu ,  Adele E. Schmitz

发明人： David T. Chang ,  James H. Schaffner ,  Tsung-Yuan Hsu ,  Adele E. Schmitz

IPC分类号： H01H51/22

CPC分类号： H01H59/0009 ,  H01H2001/0068 ,  Y10T29/49105 ,  Y10T29/49117 ,  Y10T29/49155 ,  Y10T29/49204

摘要： Apparatus for a micro-electro-mechanical switch that provides for latching switching action. The switch has a cantilever arm disposed on a substrate that can be moved in orthogonal directions for latching and unlatching. To latch the switch, the cantilever arm is moved back by a comb-drive actuator and then pulled down by electrodes disposed on the substrate and the cantilever arm. The comb-drive actuator switch is then released and the cantilever arm moves forward to be captured by a dove-tail structure on the substrate. When the voltage to the electrodes on the substrate and the cantilever arm is removed, the cantilever arm is held in place by the dove-tail structure. The switch is unlatched by actuating the comb-drive actuator to move the cantilever arm away from the dove-tail structure. The cantilever arm will then pop up once it is released from the dove-tail structure.

摘要翻译： 用于微电机械开关的装置，其提供闭锁开关动作。 开关具有设置在基板上的悬臂，该悬臂可以沿正交方向移动以锁定和解锁。 为了锁定开关，悬臂由梳驱动致动器向后移动，然后由设置在基板和悬臂上的电极拉下。 然后梳梳驱动致动器开关被释放，并且悬臂臂向前移动以通过基板上的鸽尾结构捕获。 当去除基板和悬臂上的电极的电压时，悬臂通过尾尾结构保持在适当位置。 通过启动梳齿驱动执行机构将悬臂移动离开鸽尾结构，开关被解锁。 一旦从鸽尾结构中释放出来，悬臂就会弹出。

公开(公告)号：US06916720B2

公开(公告)日：2005-07-12

申请号：US10190223

申请日：2002-07-05

申请人： Kursad Kiziloglu ,  Charles H. Fields ,  Adele E. Schmitz

发明人： Kursad Kiziloglu ,  Charles H. Fields ,  Adele E. Schmitz

IPC分类号： H01L29/73 ,  H01L21/02 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/331 ,  H01L21/335 ,  H01L21/338 ,  H01L21/822 ,  H01L27/04 ,  H01L29/778 ,  H01L29/812 ,  H01L21/20

CPC分类号： H01L28/20 ,  H01L29/66318 ,  H01L29/66462

摘要： A method for making a thin film device on integrated circuits including the steps of applying a first photoresist layer to a first surface, and patterning the first photoresist layer to have at least a first opening that exposes the first surface. A film is deposited onto the first photoresist layer, wherein a portion of the deposited film is deposited onto the exposed first surface. A second photoresist layer is applied onto the deposited layer, wherein the second photoresist layer is applied to the portion of the deposited film within the first opening and covers a second portion of the deposited layer, wherein the first photoresist layer and the second photoresist layer assist in the defining of the deposited layer. The deposited layer, first photoresist layer, and second photoresist layer are selectively removed, therein exposing the first surface and the second portion of the deposited layer.

摘要翻译： 一种用于在集成电路上制造薄膜器件的方法，包括以下步骤：将第一光致抗蚀剂层施加到第一表面，以及使第一光致抗蚀剂层图案化，以至少具有暴露第一表面的第一开口。 将膜沉积在第一光致抗蚀剂层上，其中沉积膜的一部分沉积在暴露的第一表面上。 将第二光致抗蚀剂层施加到沉积层上，其中第二光致抗蚀剂层被施加到第一开口内的沉积膜的部分并且覆盖沉积层的第二部分，其中第一光致抗蚀剂层和第二光致抗蚀剂层辅助 在沉积层的定义中。 选择性地去除沉积层，第一光致抗蚀剂层和第二光致抗蚀剂层，其中暴露沉积层的第一表面和第二部分。