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1.发明授权UV radiation process for making electronic devices having low-leakage-current and low-polarization fatigue 失效用于制造具有低漏电流和低极化疲劳的电子器件的UV辐射过程
公开(公告)号：US6133050A
公开(公告)日：2000-10-17
申请号：US405885
申请日：1995-03-17
IPC分类号： C30B29/30 , C23C16/44 , C23C16/448 , C23C16/455 , C23C16/46 , C23C16/48 , C23C16/52 , C23C18/12 , C23C18/14 , C30B7/00 , C30B29/68 , H01L21/02 , H01L21/314 , H01L21/316 , H01L21/3205 , H01L27/108 , H01L27/115 , H01L21/31
CPC分类号： H01L21/31691 , C23C16/4412 , C23C16/448 , C23C16/4486 , C23C16/45561 , C23C16/4558 , C23C16/46 , C23C16/482 , C23C16/52 , C23C18/1216 , C23C18/1225 , C23C18/1279 , C23C18/1283 , C23C18/1295 , C23C18/14 , C30B29/68 , C30B7/00 , H01L27/10805 , H01L27/11502 , H01L28/56 , H01L28/60 , H01L28/55
摘要： A precursor solution formed of a liquid polyoxyalkylated metal complex in as solvent is applied to a substrate in the formation of a metal oxide thin film. The liquid thin film is baked in air to a temperature up to 500.degree. C. while UV radiation having a wavelength ranging from 180 nm to 300 nm is applied. The thin film can be twice-baked at increasing temperatures while UV radiation is applied at one or both bakings. The film is then annealed at temperature ranging from about 700.degree. C. to 850.degree. C. to produce a thin-film solid metal oxide product. Alternatively, the UV radiation may be applied to the liquid precursor, the thin film may be annealed with UV radiation, or combinations of such applications of UV radiation to the precursor, to the thin film before or after baking, and/or UV annealing may be used. The use of UV radiation significantly reduces the leakage current and carbon impurity content of the final metal oxide.
摘要翻译： 将作为溶剂的液态聚氧化烷基化金属络合物形成的前体溶液施加到基板上，形成金属氧化物薄膜。 将液体薄膜在空气中烘烤至高达500℃的温度，同时施加波长为180nm至300nm的UV辐射。 该薄膜可以在增加的温度下进行两次烘烤，同时在一个或两个烘烤处施加UV辐射。 然后将膜在约700℃至850℃的温度范围内退火，以产生薄膜固体金属氧化物产物。 或者，可以将UV辐射施加到液体前体，该薄膜可以在紫外辐射或UV辐射的这种应用的组合与前体之间或在烘烤之前或之后对薄膜进行退火，和/或UV退火 使用。 使用紫外线辐射显着降低了最终金属氧化物的漏电流和碳杂质含量。
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2.发明授权Electrical component having low-leakage current and low polarization fatigue made by UV radiation process 失效具有低漏电流和紫外线辐射过程产生的低极化疲劳的电气部件
公开(公告)号：US5909042A
公开(公告)日：1999-06-01
申请号：US643451
申请日：1996-05-08
IPC分类号： C30B29/30 , C23C16/44 , C23C16/448 , C23C16/455 , C23C16/46 , C23C16/48 , C23C16/52 , C23C18/12 , C23C18/14 , C30B7/00 , C30B29/68 , H01L21/02 , H01L21/314 , H01L21/316 , H01L21/3205 , H01L27/108 , H01L27/115 , H01L29/94
CPC分类号： H01L21/31691 , C23C16/4412 , C23C16/448 , C23C16/4486 , C23C16/45561 , C23C16/4558 , C23C16/46 , C23C16/482 , C23C16/52 , C23C18/1216 , C23C18/1225 , C23C18/1279 , C23C18/1283 , C23C18/1295 , C23C18/14 , C30B29/68 , C30B7/00 , H01L27/10805 , H01L27/11502 , H01L28/56 , H01L28/60 , H01L28/55
摘要： A precursor solution formed of a liquid polyoxyalkylated metal complex in a solvent is applied to a substrate in the formation of a metal oxide thin film. The liquid thin film is baked in air to a temperature up to 500.degree. C. while UV radiation having a wavelength ranging from 180 nm to 300 nm is applied. The thin film can be twice-baked at increasing temperatures while UV radiation is applied at one or both bakings. The film is then annealed at temperature ranging from about 700.degree. C. to 850.degree. C. to produce a thin-film solid metal oxide product. Alternatively, the UV radiation may be applied to the liquid precursor, the thin film may be annealed with UV radiation, or combinations of such applications of UV radiation to the precursor, to the thin film before or after baking, and/or UV annealing may be used. The use of UV radiation significantly reduces the leakage current and carbon impurity content of the final metal oxide.
摘要翻译： 将由溶液中的液态聚氧化烷基化金属络合物形成的前体溶液施加到基板上，形成金属氧化物薄膜。 将液体薄膜在空气中烘烤至高达500℃的温度，同时施加波长为180nm至300nm的UV辐射。 该薄膜可以在增加的温度下进行两次烘烤，同时在一个或两个烘烤处施加UV辐射。 然后将膜在约700℃至850℃的温度范围内退火，以产生薄膜固体金属氧化物产物。 或者，可以将UV辐射施加到液体前体，该薄膜可以在紫外辐射或UV辐射的这种应用的组合与前体之间或在烘烤之前或之后对薄膜进行退火，和/或UV退火 使用。 使用紫外线辐射显着降低了最终金属氧化物的漏电流和碳杂质含量。
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3.发明授权UV radiation process for making electronic devices having low-leakage-current and low-polarization fatigue 失效用于制造具有低漏电流和低极化疲劳的电子器件的UV辐射过程
公开(公告)号：US5871853A
公开(公告)日：1999-02-16
申请号：US646485
申请日：1996-05-08
IPC分类号： C30B29/30 , C23C16/44 , C23C16/448 , C23C16/455 , C23C16/46 , C23C16/48 , C23C16/52 , C23C18/12 , C23C18/14 , C30B7/00 , C30B29/68 , H01L21/02 , H01L21/314 , H01L21/316 , H01L21/3205 , H01L27/108 , H01L27/115 , H01G4/26
CPC分类号： H01L21/31691 , C23C16/4412 , C23C16/448 , C23C16/4486 , C23C16/45561 , C23C16/4558 , C23C16/46 , C23C16/482 , C23C16/52 , C23C18/1216 , C23C18/1225 , C23C18/1279 , C23C18/1283 , C23C18/1295 , C23C18/14 , C30B29/68 , C30B7/00 , H01L27/10805 , H01L27/11502 , H01L28/56 , H01L28/60 , H01L28/55
摘要： A precursor solution formed of a liquid polyoxyalkylated metal complex in a solvent is applied to a substrate in the formation of a metal oxide thin film. The liquid thin film is baked in air to a temperature up to 500.degree. C. while UV radiation having a wavelength ranging from 180 nm to 300 nm is applied. The thin film can be twice-baked at increasing temperatures while UV radiation is applied at one or both bakings. The film is then annealed at temperature ranging from about 700.degree. C. to 850.degree. C. to produce a thin-film solid metal oxide product. Alternatively, the UV radiation may be applied to the liquid precursor, the thin film may be annealed with UV radiation, or combinations of such applications of UV radiation to the precursor, to the thin film before or after baking, and/or UV annealing may be used. The use of UV radiation significantly reduces the leakage current and carbon impurity content of the final metal oxide.
摘要翻译： 将由溶液中的液态聚氧化烷基化金属络合物形成的前体溶液施加到基板上，形成金属氧化物薄膜。 将液体薄膜在空气中烘烤至高达500℃的温度，同时施加波长为180nm至300nm的UV辐射。 该薄膜可以在增加的温度下进行两次烘烤，同时在一个或两个烘烤处施加UV辐射。 然后将膜在约700℃至850℃的温度范围内退火，以产生薄膜固体金属氧化物产物。 或者，可以将UV辐射施加到液体前体，该薄膜可以在紫外辐射或UV辐射的这种应用的组合与前体之间或在烘烤之前或之后对薄膜进行退火，和/或UV退火 使用。 使用紫外线辐射显着降低了最终金属氧化物的漏电流和碳杂质含量。
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公开(公告)号：US5612082A
公开(公告)日：1997-03-18
申请号：US280601
申请日：1994-07-26
IPC分类号： C23C18/12 , C30B7/00 , H01C7/10 , H01L21/02 , H01L21/314 , H01L21/316 , H01L27/108 , H01L27/115 , C07F19/00 , B05D5/12
CPC分类号： H01L27/11502 , C23C16/45561 , C23C18/1216 , C23C18/1225 , C23C18/1279 , C30B29/68 , C30B7/00 , H01C7/1013 , H01L21/314 , H01L21/31691 , H01L27/10805 , H01L28/56 , H01L28/60 , H01L28/55
摘要： Metals are reacted in a first solvent, such as 2-methoxyethanol, to form an initial precursor comprising metal-oxide compounds dissolved in the first solvent. A second solvent, such as xylene, that does not react with the metal is added to the solution and the solution heated to distill away the first solvent and form a final precursor. The final precursor is spin-coated on an integrated circuit substrate then dried and annealed to form a thin film of a metal oxide. For metal oxides including bismuth, the bismuth precursor is added to a cold initial precursor and the final precursor is not heated after the bismuth precursor is added. The second solvent wets the substrate better than the first solvent and has a better viscosity for spin-coating, thus resulting in a denser thin film with fewer imperfections.
摘要翻译： 金属在第一溶剂如2-甲氧基乙醇中反应以形成包含溶解在第一溶剂中的金属氧化物化合物的初始前体。 将不与金属反应的第二溶剂（例如二甲苯）加入到溶液中，并将溶液加热以蒸馏掉第一溶剂并形成最终的前体。 将最终的前体旋涂在集成电路基板上，然后干燥并退火以形成金属氧化物的薄膜。 对于包括铋的金属氧化物，将铋前体加入到冷的初始前体中，并且在添加铋前体之后，最终的前体不被加热。 第二溶剂比第一溶剂润湿底物，并且具有更好的旋涂粘度，因此导致具有较少缺陷的更致密的薄膜。
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公开(公告)号：US5972428A
公开(公告)日：1999-10-26
申请号：US611414
申请日：1996-03-05
IPC分类号： H01L21/314 , H01L21/316 , C23C16/00 , B05D1/02
CPC分类号： H01L21/31691
摘要： A liquid primer is misted, flowed into a deposition chamber and deposited on a substrate. A liquid precursor is then misted, flowed into a deposition chamber and deposited on the substrate. The primer and precursor are dried to form a solid thin film, which is then annealed to form a part of an electronic component in an integrated circuit, such as the dielectric in a memory cell. The primer is a solvent, and the precursor includes a metal carboxylate, a metal alkoxide, or a metal alkoxycarboxylate in a precursor solvent. Preferably, the primer and the precursor solvent are the same solvent, such as 2-methoxyethanol, xylenes, or n-butyl acetate.
摘要翻译： 液体底漆被雾化，流入沉积室并沉积在基底上。 然后液体前体被雾化，流入沉积室并沉积在基底上。 将底漆和前体干燥以形成固体薄膜，然后将其退火以形成集成电路中的电子部件的一部分，例如存储单元中的电介质。 引物是溶剂，前体在前体溶剂中包括金属羧酸盐，金属醇盐或烷氧基羧酸金属盐。 优选地，底漆和前体溶剂是相同的溶剂，例如2-甲氧基乙醇，二甲苯或乙酸正丁酯。
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公开(公告)号：US06404003B1
公开(公告)日：2002-06-11
申请号：US09362480
申请日：1999-07-28
IPC分类号： H01L27108
CPC分类号： C23C18/1216 , C23C18/1245 , C23C18/1279 , C23C18/1283 , H01L28/55 , H01L28/60 , H01L28/75
摘要： An integrated circuit capacitor containing a thin film delectric metal oxide is formed above a silicon germanium substrate. A silicon nitride diffusion barrier layer is deposited on a silicon germanium substrate to prevent evaporation of the substrate in subsequent heating steps. A silicon dioxide stress reduction layer is deposited on the diffusion barrier layer. A bottom electrode is formed on the stress reduction layer, then a liquid precursor is spun on the bottom electrode, dried at about 400° C., and annealed at between 600° C. and 850° C. to form a BST capacitor dielectric. A top electrode is deposited on the dielectric and annealed. The integrated circuit may also include a BiCMOS device, a HBT device or a MOSFET.
摘要翻译： 在硅锗基板上形成包含薄膜电介质金属氧化物的集成电路电容器。 在硅锗衬底上沉积氮化硅扩散阻挡层，以防止随后的加热步骤中衬底的蒸发。 二氧化硅应力降低层沉积在扩散阻挡层上。 在应力降低层上形成底部电极，然后在底部电极上旋转液体前体，在约400℃下干燥，并在600℃和850℃之间退火以形成BST电容器电介质。 顶部电极沉积在电介质上并退火。 集成电路还可以包括BiCMOS器件，HBT器件或MOSFET。
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7.发明授权
公开(公告)号：US5955754A
公开(公告)日：1999-09-21
申请号：US406374
申请日：1995-03-17
IPC分类号： H01L27/10 , C04B35/622 , C23C16/448 , C23C18/12 , C30B7/00 , H01L21/02 , H01L21/314 , H01L21/316 , H01L21/8242 , H01L21/8246 , H01L27/105 , H01L27/108 , H01L27/115 , H01L29/92 , H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113
CPC分类号： C23C16/448 , C04B35/62227 , C23C16/45561 , C23C18/1216 , C23C18/1225 , C23C18/1279 , C30B29/68 , C30B7/00 , C30B7/005 , H01L21/314 , H01L21/31691 , H01L27/10805 , H01L27/11502 , H01L28/40 , H01L28/56 , H01L28/60 , H01L28/55
摘要： Metal alkoxycarboxylate-based liquid precursor solutions are used form electronic devices (100) that include mixed layered superlattice materials (112) of a type having discrete oxygen octahedral layers (124) and (128) collated with a superlattice-generator layer (116). The precursor solutions include a plurality of metal moieties in effective amounts for yielding the layered superlattice materials. These metal moieties are mixed to include an A/B portion capable of forming an A/B layer (124), a perovskite-like AB layer portion capable of forming a perovskite-like AB octahedral layer (128), and a superlattice-generator portion capable of forming the superlattice-generator layer (116). The precursors are deposited in liquid form upon a substrate and annealed to provide the layered superlattice materials.
摘要翻译： 基于金属烷氧基羧酸盐的液体前体溶液用于电子器件（100），其包括具有离散氧八面体层（124）和（128）与超晶格 - 发生层（116）整理的类型的混合层状超晶格材料（112）。 前体溶液包括有效量的用于产生层状超晶格材料的多个金属部分。 这些金属部分被混合以包括能够形成A / B层（124）的A / B部分，能够形成钙钛矿型AB八面体层（128）的钙钛矿型AB层部分和超晶格发生器 能够形成超晶格 - 发生器层（116）的部分。 前体以液体形式沉积在基底上并退火以提供层状超晶格材料。
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公开(公告)号：US06639262B2
公开(公告)日：2003-10-28
申请号：US09906285
申请日：2001-07-16
IPC分类号： H01L31119
CPC分类号： H01L21/02197 , C04B35/4682 , C04B35/6264 , C04B2235/3213 , C04B2235/3224 , C04B2235/3227 , C04B2235/3229 , C04B2235/3243 , C04B2235/3268 , C04B2235/441 , C04B2235/449 , C04B2235/72 , C23C16/4412 , C23C16/448 , C23C16/4486 , C23C16/45561 , C23C16/4558 , C23C16/46 , C23C16/482 , C23C16/52 , C23C18/1216 , C23C18/1225 , C23C18/1245 , C23C18/1275 , C23C18/1279 , C23C18/1283 , C23C18/14 , C30B7/00 , C30B7/005 , C30B29/68 , H01C7/1013 , H01L21/02164 , H01L21/0217 , H01L21/022 , H01L21/02282 , H01L21/314 , H01L21/31691 , H01L27/10805 , H01L27/11502 , H01L28/55 , H01L28/56 , H01L28/60 , H01L28/75
摘要： Integrated circuit capacitors in which the capacitor dielectric is a thin film of BST having a grain size smaller than 200 nanometers formed above a silicon germanium substrate. Typical grain sizes are 40 nm and less. The BST is formed by deposition of a liquid precursor by a spin-on process. The original liquid precursor includes an alkoxycarboxylate dissolved in 2-methoxyethanol and a xylene exchange is performed just prior to spinning. The precursor is dried in air at a temperature of about 400° C. and then furnace annealed in oxygen at a temperature of between 600° C. and 850° C.
摘要翻译： 集成电路电容器，其中电容器电介质是在硅锗衬底上方形成的具有小于200纳米的晶粒尺寸的BST薄膜。 典型的晶粒尺寸为40nm以下。 BST通过旋涂工艺沉积液体前体而形成。 原始液体前体包括溶解在2-甲氧基乙醇中的烷氧基羧酸酯，并且在旋转之前进行二甲苯交换。 前体在空气中在约400℃的温度下干燥，然后在600℃至850℃的温度下在氧气中进行炉退火。
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9.发明授权Method of making ferroelectric FET with polycrystalline crystallographically oriented ferroelectric material 失效制造具有多晶结晶取向铁电材料的铁电FET的方法公开(公告)号：US06537830B1
公开(公告)日：2003-03-25
申请号：US09533204
申请日：2000-03-23
IPC分类号： H01L2100
CPC分类号： C23C16/4558 , C23C16/4412 , C23C16/448 , C23C16/4486 , C23C16/45561 , C23C16/482 , C23C16/52 , C23C18/1216 , C23C18/1279 , C23C18/1283 , C23C18/14 , C30B7/00 , C30B7/005 , C30B29/68 , H01L21/31691 , H01L27/10805 , H01L27/11502 , H01L28/55 , H01L28/56 , H01L28/60
摘要： A nondestructive read-out, nonvolatile ferroelectric field effect transistor (“FET”) memory in an integrated circuit, containing a thin film of polycrystalline crystallographically oriented ferroelectric material. Preferably, the material is polycrystalline c-axis oriented layered superlattice material. More preferably, it is c-axis oriented strontium bismuth tantalate or strontium bismuth tantalum niobate.
摘要翻译： 集成电路中的非破坏性读出非易失性铁电场效应晶体管（“FET”）存储器，其包含多晶结晶取向铁电材料的薄膜。 优选地，材料是多晶c轴取向层状超晶格材料。 更优选的是c轴取向的钽酸铋铋或铌酸铋钽铌酸盐。
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10.发明授权Misted precursor deposition apparatus and method with improved mist and mist flow 失效雾化前体沉积装置和方法具有改善的雾气流
公开(公告)号：US5962085A
公开(公告)日：1999-10-05
申请号：US610330
申请日：1996-03-04
IPC分类号： B05D1/00 , B05D3/04 , B05D3/06 , B05D7/24 , C23C8/10 , C23C16/44 , C23C16/448 , C23C16/455 , C23C16/46 , C23C16/48 , C23C16/52 , C23C18/12 , C23C18/14 , C23C26/02 , C30B7/00 , H01L21/02 , H01L21/31 , H01L21/314 , H01L21/316 , H01L27/115 , H01L39/24 , H01L41/24 , H05K3/10 , C23C8/00
CPC分类号： H01L21/02197 , B05D1/00 , B05D1/60 , B05D3/0493 , B05D3/062 , B05D3/065 , C23C16/4412 , C23C16/4486 , C23C16/45561 , C23C16/4558 , C23C16/46 , C23C16/482 , C23C16/52 , C23C18/12 , C23C18/1216 , C23C18/1287 , C23C18/14 , C23C26/02 , C23C8/10 , C30B29/68 , C30B7/00 , C30B7/005 , H01L21/02282 , H01L21/31691 , H01L27/11502 , H01L28/56 , H01L28/60 , H01L41/314 , H01L28/55 , H01L41/1871 , H05K3/105
摘要： A substrate is located within a deposition chamber, the substrate defining a substrate plane. A barrier plate is disposed in spaced relation above the substrate and substantially parallel thereto, the area of said barrier plate in a plane parallel to said substrate being substantially equal to said area of said substrate in said substrate plane, i.e. within 10% of said substrate area. The barrier plate has a smoothness tolerance of 5% of the average distance between said barrier plate and said substrate. A mist is generated, allowed to settle in a buffer chamber, filtered through a 1 micron filter, and flowed into the deposition chamber between the substrate and barrier plate to deposit a liquid layer on the substrate. The liquid is dried to form a thin film of solid material on the substrate, which is then incorporated into an electrical component of an integrated circuit.
摘要翻译： 衬底位于沉积室内，衬底限定衬底平面。 阻挡板以与衬底相对的基本平行的方式设置成隔开关系，所述阻挡板在平行于所述衬底的平面中的面积基本上等于所述衬底平面中所述衬底的所述面积，即在所述衬底的10％内 区。 阻挡板具有所述阻挡板和所述基板之间的平均距离的5％的平滑度公差。 产生雾，允许沉淀在缓冲室中，通过1微米过滤器过滤，并流入基板和阻挡板之间的沉积室，以在基板上沉积液体层。 将液体干燥以在基板上形成固体材料的薄膜，然后将其并入集成电路的电气部件中。
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