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    Method of producing semiconductor device
    4.
    发明授权
    Method of producing semiconductor device 失效
    半导体器件的制造方法

    公开(公告)号：US07674634B2

    公开(公告)日：2010-03-09

    申请号：US10532249

    申请日：2003-11-05

    申请人： Kenji Maruyama ,  Masaki Kurasawa ,  Masao Kondo ,  Yoshihiro Arimoto

    发明人： Kenji Maruyama ,  Masaki Kurasawa ,  Masao Kondo ,  Yoshihiro Arimoto

    IPC分类号： H01L21/8246

    CPC分类号： H01L27/11502 ,  H01L27/11507 ,  H01L28/55

    摘要： A semiconductor device incorporating a capacitor structure that includes a ferroelectric thin film is obtained by forming, on a single crystalline substrate 10 having a surface suited for growing thereon a thin film layer of ferroelectric single crystal having a plane (111), a ferroelectric single crystalline thin film 12′ containing Pb and having a plane (111) 11 in parallel with the surface of the substrate (or a ferroelectric polycrystalline thin film containing Pb and oriented parallel with the plane (111) in parallel with the surface of the substrate) and part 16 of a circuit of a semiconductor device, to thereby fabricate the single crystalline substrate 10 having said ferroelectric thin film containing Pb and said part of the circuit of the semiconductor device; and bonding said single crystalline substrate 10 to another substrate on which the other circuit of the semiconductor device has been formed in advance, to couple the two circuits together.The capacitor in the semiconductor device thus obtained includes a ferroelectric thin film having a large amount of polarizing charge. The semiconductor device can be used as a highly reliable nonvolatile memory.

    摘要翻译： 通过在具有适于生长表面的单晶衬底10上形成具有平面（111）的铁电单晶薄膜层，铁电单结晶 含有Pb的具有与基板表面平行的平面（111）11的薄膜12'（或含有Pb的铁电体多晶薄膜，与基板的表面平行取向平行），以及 半导体器件的电路的第16部分，从而制造具有含有Pb的所述铁电薄膜和所述半导体器件的所述电路的所述部分的单晶衬底10; 并将所述单晶衬底10预先连接到其上形成有半导体器件的另一电路的另一衬底上，以将两个电路耦合在一起。 由此得到的半导体装置中的电容器具有大量的极化电荷的铁电薄膜。 半导体器件可以用作高度可靠的非易失性存储器。

    Semiconductor memory device and method of fabricating the same
    5.
    发明授权
    Semiconductor memory device and method of fabricating the same 有权
    半导体存储器件及其制造方法

    公开(公告)号：US07893473B2

    公开(公告)日：2011-02-22

    申请号：US12239892

    申请日：2008-09-29

    申请人： Kenji Maruyama ,  Masao Kondo ,  Keisuke Sato

    发明人： Kenji Maruyama ,  Masao Kondo ,  Keisuke Sato

    IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119 ,  H01L21/00

    CPC分类号： H01L21/28291 ,  G11C11/22 ,  H01L29/516 ,  H01L29/6684 ,  H01L29/78391 ,  H01L43/06

    摘要： The present invention is to provide a semiconductor memory device capable of providing excellent storage properties, scaling and high integration and a method of fabricating the same. A semiconductor memory device has a multiferroic film exhibiting ferroelectricity and ferromagnetism, a channel region on an interface of a semiconductor substrate below the multiferroic film, source and drain regions formed on both sides of the channel region, a gate electrode (data write electrode) applying gate voltage to the multiferroic film to write data in such a way that the orientation of magnetization is changed as corresponding to the orientation of dielectric polarization, and source and drain electrodes (data read electrodes) that read data based on a deviation in a flow of the carrier, the deviation caused by applying the Lorentz force to the carrier flowing in the channel region from a magnetic field occurring in the channel region because of magnetization.

    摘要翻译： 本发明提供能够提供优异的存储特性，缩放和高集成度的半导体存储器件及其制造方法。 半导体存储器件具有显示铁电性和铁磁性的多铁性膜，在多铁性膜下方的半导体衬底的界面上的沟道区，形成在沟道区两侧的源极和漏极区，施加了栅电极（数据写入电极） 栅极电压到多层膜以这样的方式写入数据，使得磁化的取向对应于介电极化的取向而变化，以及源极和漏极（数据读取电极），其基于流动的偏差读取数据 载体，由于由于磁化而从在沟道区域中发生的磁场向在沟道区域中流动的载流子施加洛伦兹力所引起的偏差。

    Electronic device with electrode and its manufacture
    6.
    发明授权
    Electronic device with electrode and its manufacture 失效
    带电极的电子设备及其制造

    公开(公告)号：US07153705B2

    公开(公告)日：2006-12-26

    申请号：US10821841

    申请日：2004-04-12

    申请人： Kenji Maruyama ,  Masao Kondo ,  Masaki Kurasawa

    发明人： Kenji Maruyama ,  Masao Kondo ,  Masaki Kurasawa

    IPC分类号： H01L21/00

    CPC分类号： H01L27/11502 ,  H01L27/11507 ,  H01L28/55 ,  H01L28/56 ,  H01L28/60

    摘要： A method of manufacturing an electronic device includes the steps of: (a) preparing a (001) oriented ReO3 layer; and (b) forming a (001) oriented oxide ferroelectric layer having a perovskite structure on the ReO3 layer. Preferably, the step (a) includes the steps of: (a-1) preparing a (001) oriented MgO layer; and (a-2) forming a (001) oriented ReO3 layer on the MgO layer. An electronic device capable of obtaining a ferroelectric layer of a large polarization and a method of manufacturing the same are provided.

    摘要翻译： 制造电子器件的方法包括以下步骤：（a）制备（001）取向的ReO 3 N 3层; 和（b）在ReO 3层上形成具有钙钛矿结构的（001）取向的氧化物铁电层。 优选地，步骤（a）包括以下步骤：（a-1）制备（001）取向的MgO层; 和（a-2）在MgO层上形成（001）取向的ReO 3 3层。 提供一种能够获得大极化的铁电体层的电子装置及其制造方法。

    Method of producing semiconductor device
    7.
    发明申请
    Method of producing semiconductor device 失效
    半导体器件的制造方法

    公开(公告)号：US20060166378A1

    公开(公告)日：2006-07-27

    申请号：US10532249

    申请日：2003-11-05

    申请人： Kenji Maruyama ,  Masaki Kurasawa ,  Masao Kondo ,  Yoshihiro Arimoto

    发明人： Kenji Maruyama ,  Masaki Kurasawa ,  Masao Kondo ,  Yoshihiro Arimoto

    IPC分类号： H01L21/20 ,  H01L21/00

    CPC分类号： H01L27/11502 ,  H01L27/11507 ,  H01L28/55

    摘要： A semiconductor device incorporating a capacitor structure that includes a ferroelectric thin film is obtained by forming, on a single crystalline substrate 10 having a surface suited for growing thereon a thin film layer of ferroelectric single crystal having a plane (111), a ferroelectric single crystalline thin film 12′ containing Pb and having a plane (111) 11 in parallel with the surface of the substrate (or a ferroelectric polycrystalline thin film containing Pb and oriented parallel with the plane (111) in parallel with the surface of the substrate) and part 16 of a circuit of a semiconductor device, to thereby fabricate the single crystalline substrate 10 having said ferroelectric thin film containing Pb and said part of the circuit of the semiconductor device; and bonding said single crystalline substrate 10 to another substrate on which the other circuit of the semiconductor device has been formed in advance, to couple the two circuits together. The capacitor in the semiconductor device thus obtained includes a ferroelectric thin film having a large amount of polarizing charge. The semiconductor device can be used as a highly reliable nonvolatile memory.

    摘要翻译： 通过在具有适于生长表面的单晶衬底10上形成具有平面（111）的铁电单晶薄膜层，铁电单结晶 含有Pb的具有与基板表面平行的平面（111）11的薄膜12'（或含有Pb的铁电体多晶薄膜，与基板的表面平行取向平行），以及 半导体器件的电路的第16部分，从而制造具有含有Pb的所述铁电薄膜和所述半导体器件的所述电路的所述部分的单晶衬底10; 并将所述单晶衬底10预先连接到其上形成有半导体器件的另一电路的另一衬底上，以将两个电路耦合在一起。 由此得到的半导体装置中的电容器具有极性电荷量大的铁电薄膜。 半导体器件可以用作高度可靠的非易失性存储器。