公开(公告)号：US20070034525A1

公开(公告)日：2007-02-15

申请号：US11203545

申请日：2005-08-12

申请人： Masayuki Kumekawa ,  Norio Kimura ,  Yukio Fukunaga ,  Katsuyuki Musaka ,  Hariklia Deligianni ,  Emanuel Cooper ,  Philippe Vereecken

发明人： Masayuki Kumekawa ,  Norio Kimura ,  Yukio Fukunaga ,  Katsuyuki Musaka ,  Hariklia Deligianni ,  Emanuel Cooper ,  Philippe Vereecken

IPC分类号： B23H9/00

CPC分类号： B23H5/08

摘要： An electrolytic processing method is used to remove a metal film formed on a surface of a substrate. The electrolytic processing method includes providing a feeding electrode 31 and a processing electrode 32 on a table 12, providing an insulating member 36 between the feeding electrode and the processing electrode, holding the substrate W by a substrate carrier 11, bringing the substrate into contact with the insulating member, supplying first and second electrolytic processing liquids to gaps between the feeding electrode and the substrate and between the processing electrode and the substrate, respectively, while the first and second electrolytic processing liquids are electrically isolated, applying voltage between the feeding electrode and the processing electrode, and making a relative movement between the substrate carrier and the table to electrically process the metal film.

摘要翻译： 使用电解处理方法去除在基板的表面上形成的金属膜。 电解处理方法包括在台12上设置馈电电极31和处理电极32，在馈电电极和处理电极之间提供绝缘构件36，通过衬底载体11保持衬底W，使衬底与 所述绝缘构件在所述第一和第二电解处理液体被电绝缘的同时，在所述馈电电极和所述衬底之间以及所述处理电极和所述衬底之间的间隙中分别供应第一和第二电解处理液体， 处理电极，并且在基板载体和工作台之间进行相对运动以对金属膜进行电加工。

公开(公告)号：US20070034526A1

公开(公告)日：2007-02-15

申请号：US11202684

申请日：2005-08-12

申请人： Natsuki Makino ,  Junji Kunisawa ,  Keisuke Namiki ,  Yukio Fukunaga ,  Katsuyuki Musaka ,  Ray Fang ,  Emanuel Cooper ,  John Cotte ,  Hariklia Deligianni ,  Keith Kwietniak ,  Brett Baker-O'Neal ,  Matteo Flotta ,  Philippe Vereecken

发明人： Natsuki Makino ,  Junji Kunisawa ,  Keisuke Namiki ,  Yukio Fukunaga ,  Katsuyuki Musaka ,  Ray Fang ,  Emanuel Cooper ,  John Cotte ,  Hariklia Deligianni ,  Keith Kwietniak ,  Brett Baker-O'Neal ,  Matteo Flotta ,  Philippe Vereecken

IPC分类号： B23H3/00

CPC分类号： B23H5/08 ,  C25F3/02 ,  C25F7/00

摘要： An electrolytic processing apparatus can planarize uniformly over an entire surface of a substrate under a low pressure without any damages to the substrate. The electrolytic processing apparatus has a substrate holder configured to hold and rotate a substrate having a metal film formed on a surface of the substrate and an electrolytic processing unit configured to perform an electrolytic process on the substrate held by the substrate holder. The electrolytic processing unit has a rotatable processing electrode, a polishing pad attached to the rotatable processing electrode, and a pressing mechanism configured to press the polishing pad against the substrate. The electrolytic processing unit also has a liquid supply mechanism configured to supply an electrolytic processing liquid between the substrate and the rotatable processing electrode, a relative movement mechanism operable to move the substrate and the rotatable processing electrode relative to each other, and a power supply configured to applying a voltage between the rotatable processing electrode and the metal film of the substrate so that the rotatable processing electrode serves as a cathode and the metal film of the substrate serves as an anode.

摘要翻译： 电解处理装置可以在低压下在基板的整个表面上均匀地平坦化，而不会对基板造成任何损坏。 所述电解处理装置具有基板保持件，所述基板保持器被构造成保持和旋转形成在所述基板的表面上的金属膜的基板和被配置为在由所述基板保持器保持的所述基板上进行电解处理的电解处理单元。 电解处理单元具有可旋转的处理电极，附接到可旋转处理电极的抛光垫，以及被配置为将抛光垫压靠在基板上的按压机构。 电解处理单元还具有：液体供给机构，被构造成在基板和可旋转处理电极之间提供电解处理液体;相对移动机构，其可操作以相对于彼此移动基板和可旋转处理电极;电源配置 在可旋转处理电极和基板的金属膜之间施加电压，使得可旋转处理电极用作阴极，并且基板的金属膜用作阳极。

公开(公告)号：US20090095634A1

公开(公告)日：2009-04-16

申请号：US11907589

申请日：2007-10-15

申请人： Natsuki Makino ,  Keisuke Namiki ,  Kunihito Ide ,  Junji Kunisawa ,  Katsuyuki Musaka ,  Philippe Vereecken ,  Brett C. Baker-O'Neal ,  Hariklia Deligianni ,  Keith Kwietniak

发明人： Natsuki Makino ,  Keisuke Namiki ,  Kunihito Ide ,  Junji Kunisawa ,  Katsuyuki Musaka ,  Philippe Vereecken ,  Brett C. Baker-O'Neal ,  Hariklia Deligianni ,  Keith Kwietniak

IPC分类号： C25D5/48 ,  C25D5/00

CPC分类号： C25D17/00 ,  C25D17/008 ,  C25D21/12 ,  H01L21/2885 ,  H01L21/76877

摘要： A plating method can form a plated film having a uniform thickness over the entire surface, including the peripheral surface, of a substrate. The plating method includes: disposing an anode so as to face a conductive film, formed on a substrate, which serves as a cathode, and disposing an auxiliary cathode on an ring-shaped seal member for sealing a peripheral portion of the substrate; bringing the conductive film, the anode and the auxiliary cathode into contact with a plating solution; and supplying electric currents between the anode and the conductive film, and between the anode and the auxiliary cathode to carry out plating.

摘要翻译： 电镀方法可以在基板的整个表面（包括外周表面）上形成均匀厚度的镀膜。 电镀方法包括：将阳极设置成面对形成在用作阴极的基板上的导电膜，并将辅助阴极设置在用于密封基板的周边部分的环形密封构件上; 使导电膜，阳极和辅助阴极与电镀液接触; 并且在阳极和导电膜之间以及阳极和辅助阴极之间提供电流以进行电镀。

公开(公告)号：US20060086616A1

公开(公告)日：2006-04-27

申请号：US11245490

申请日：2005-10-07

申请人： Keiichi Kurashina ,  Mizuki Nagai ,  Satoru Yamamoto ,  Hiroyuki Kanda ,  Koji Mishima ,  Shinya Morisawa ,  Junji Kunisawa ,  Kunihito Ide ,  Hidenao Suzuki ,  Emanuel Cooper ,  Philippe Vereecken ,  Brett Baker-O' Neal ,  Hariklia Deligianni

发明人： Keiichi Kurashina ,  Mizuki Nagai ,  Satoru Yamamoto ,  Hiroyuki Kanda ,  Koji Mishima ,  Shinya Morisawa ,  Junji Kunisawa ,  Kunihito Ide ,  Hidenao Suzuki ,  Emanuel Cooper ,  Philippe Vereecken ,  Brett Baker-O' Neal ,  Hariklia Deligianni

IPC分类号： C25D21/12 ,  C25B15/00

CPC分类号： C25D5/22 ,  C25D5/18 ,  C25D7/123 ,  C25D17/001 ,  C25D17/002 ,  C25D17/004 ,  C25D17/005 ,  C25D17/12 ,  C25D21/12 ,  H01L21/2885 ,  H01L21/7684 ,  H01L21/76849 ,  H01L21/76877

摘要： A plating apparatus can securely carry out a flattening plating of a substrate to form a plated film having a flat surface without using a costly mechanism, and without applying an extra plating to the substrate. The plating apparatus includes a substrate holder; a cathode section having a seal member for watertightly sealing a peripheral portion of the substrate, and a cathode electrode for supplying an electric current to the substrate; an anode disposed in a position facing the surface of the substrate; a porous member disposed between the anode and the surface of the substrate; a constant-voltage control section for controlling a voltage applied between the cathode electrode and the anode at a constant value; and a current monitor section for monitoring an electric current flowing between the cathode electrode and the anode, and feeding back a detection signal to the constant-voltage control section.

摘要翻译： 电镀装置可以可靠地进行基板的平坦化镀以形成具有平坦表面的镀膜而不使用昂贵的机构，并且不对基板施加额外的电镀。 电镀装置包括：基板支架; 具有用于水密密封基板的周边部分的密封部件的阴极部分和用于向基板供给电流的阴极电极; 设置在面向所述基板的表面的位置的阳极; 设置在所述阳极和所述基板的表面之间的多孔构件; 恒定电压控制部分，用于以恒定值控制在所述阴极和所述阳极之间施加的电压; 以及电流监视部分，用于监视在阴极和阳极之间流动的电流，并将检测信号反馈到恒压控制部分。

公开(公告)号：US20060081885A1

公开(公告)日：2006-04-20

申请号：US11228269

申请日：2005-10-26

申请人： Katherine Saenger ,  Cyril Cabral ,  Hariklia Deligianni ,  Panayotis Andricacos ,  Caliopi Andricacos ,  Philippe Vereecken ,  Emanuel Cooper

发明人： Katherine Saenger ,  Cyril Cabral ,  Hariklia Deligianni ,  Panayotis Andricacos ,  Caliopi Andricacos ,  Philippe Vereecken ,  Emanuel Cooper

IPC分类号： H01L29/76 ,  H01L29/745

CPC分类号： H01L21/28088 ,  H01L29/4966 ,  H01L29/66621 ,  H01L29/7834

摘要： Disclosed is a method for making a metal gate for a FET, wherein the metal gate comprises at least some material deposited by electroplating as well as an FET device comprising a metal gate that is at least partially plated. Further disclosed is a method for making a metal gate for a FET wherein the metal gate comprises at least some plated material and the method comprises the steps of: selecting a substrate having a top surface and a recessed region; conformally depositing a thin conductive seed layer on the substrate; and electroplating a filler gate metal on the seed layer to fill and overfill the recessed region.

摘要翻译： 公开了一种用于制造用于FET的金属栅极的方法，其中金属栅极包括通过电镀沉积的至少一些材料以及包括至少部分镀覆的金属栅极的FET器件。 还公开了一种用于制造用于FET的金属栅极的方法，其中金属栅极包括至少一些镀层材料，并且该方法包括以下步骤：选择具有顶表面和凹陷区域的衬底; 在衬底上共形沉积导电种子层; 并在种子层上电镀填充栅极金属以填充和覆盖凹陷区域。

公开(公告)号：US20050095852A1

公开(公告)日：2005-05-05

申请号：US10694793

申请日：2003-10-29

申请人： Katherine Saenger ,  Cyril Cabral ,  Emanuel Cooper ,  Hariklia Deligianni ,  Panayotis Andricacos ,  Philippe Vereecken

发明人： Katherine Saenger ,  Cyril Cabral ,  Emanuel Cooper ,  Hariklia Deligianni ,  Panayotis Andricacos ,  Philippe Vereecken

IPC分类号： H01L21/28 ,  H01L21/288 ,  H01L21/336 ,  H01L29/49 ,  H01L29/78 ,  H01L29/745 ,  H01L21/44 ,  H01L29/76

CPC分类号： H01L21/28088 ,  H01L29/4966 ,  H01L29/66621 ,  H01L29/7834

摘要： Disclosed is a method for making a metal gate for a FET, wherein the metal gate comprises at least some material deposited by electroplating as well as an FET device comprising a metal gate that is at least partially plated. Further disclosed is a method for making a metal gate for a FET wherein the metal gate comprises at least some plated material and the method comprises the steps of: selecting a substrate having a top surface and a recessed region; conformally depositing a thin conductive seed layer on the substrate; and electroplating a filler gate metal on the seed layer to fill and overfill the recessed region.

摘要翻译： 公开了一种用于制造用于FET的金属栅极的方法，其中金属栅极包括通过电镀沉积的至少一些材料以及包括至少部分镀覆的金属栅极的FET器件。 还公开了一种用于制造用于FET的金属栅极的方法，其中金属栅极包括至少一些电镀材料，并且该方法包括以下步骤：选择具有顶表面和凹陷区域的衬底; 在衬底上共形沉积导电种子层; 并在种子层上电镀填充栅极金属以填充和覆盖凹陷区域。

公开(公告)号：US20060166474A1

公开(公告)日：2006-07-27

申请号：US11050790

申请日：2005-01-27

申请人： Philippe Vereecken ,  Veeraraghavan Basker ,  Cyril Cabral ,  Emanuel Cooper ,  Hariklia Deligianni ,  Martin Frank ,  Rajarao Jammy ,  Vamsi Paruchuri ,  Katherine Saenger ,  Xiaoyan Shao

发明人： Philippe Vereecken ,  Veeraraghavan Basker ,  Cyril Cabral ,  Emanuel Cooper ,  Hariklia Deligianni ,  Martin Frank ,  Rajarao Jammy ,  Vamsi Paruchuri ,  Katherine Saenger ,  Xiaoyan Shao

IPC分类号： H01L21/20

CPC分类号： H01L21/2885 ,  C25D3/50 ,  C25D5/02 ,  C25D5/024 ,  C25D5/54 ,  C25D7/123 ,  C25D9/04 ,  C25F3/14 ,  H01L21/28079 ,  H01L21/28114 ,  H01L21/76885 ,  H01L29/513 ,  H01L29/517 ,  H01L29/78648

摘要： A method is provided for electroplating a gate metal or other conducting or semiconducting material directly on a dielectric such as a gate dielectric. The method involves selecting a substrate, dielectric layer, and electrolyte solution or melt, wherein the combination of the substrate, dielectric layer, and electrolyte solution or melt allow an electrochemical current to be passed from the substrate through the dielectric layer into the electrolyte solution or melt. Methods are also provided for electrochemical modification of dielectrics utilizing through-dielectric current flow.

摘要翻译： 提供了一种用于将栅极金属或其它导电或半导体材料直接电镀在诸如栅极电介质的电介质上的方法。 该方法包括选择衬底，电介质层和电解质溶液或熔体，其中衬底，电介质层和电解质溶液或熔体的组合允许电化学电流从衬底通过电介质层进入电解质溶液或 熔化。 还提供了利用电介质电流流动的电介质电化学修饰方法。

公开(公告)号：US20100219078A1

公开(公告)日：2010-09-02

申请号：US12771056

申请日：2010-04-30

申请人： Keiichi KURASHINA ,  Mizuki Nagai ,  Satoru Yamamoto ,  Hiroyuki Kanda ,  Koji Mishima ,  Shinya Morisawa ,  Junji Kunisawa ,  Kunihito Ide ,  Hidenao Suzuki ,  Emanuel Cooper ,  Philippe Vereecken ,  Brett Baker-O'Neal ,  Hariklia Deligianni

发明人： Keiichi KURASHINA ,  Mizuki Nagai ,  Satoru Yamamoto ,  Hiroyuki Kanda ,  Koji Mishima ,  Shinya Morisawa ,  Junji Kunisawa ,  Kunihito Ide ,  Hidenao Suzuki ,  Emanuel Cooper ,  Philippe Vereecken ,  Brett Baker-O'Neal ,  Hariklia Deligianni

IPC分类号： C25D21/12 ,  C25D5/00

CPC分类号： C25D5/22 ,  C25D5/18 ,  C25D7/123 ,  C25D17/001 ,  C25D17/002 ,  C25D17/004 ,  C25D17/005 ,  C25D17/12 ,  C25D21/12 ,  H01L21/2885 ,  H01L21/7684 ,  H01L21/76849 ,  H01L21/76877

摘要： A plating apparatus securely carries out a flattening plating of a substrate to form a plated film having a flat surface without using a costly mechanism, and without applying an extra plating to the substrate. The plating apparatus includes a substrate holder; a cathode section having a seal member for watertightly sealing a peripheral portion of the substrate, and a cathode electrode for supplying an electric current to the substrate; an anode disposed in a position facing the surface of the substrate; a porous member disposed between the anode and the surface of the substrate; a constant-voltage control section for controlling a voltage applied between the cathode electrode and the anode at a constant value; and a current monitor section for monitoring an electric current flowing between the cathode electrode and the anode, and feeding back a detection signal to the constant-voltage control section.

摘要翻译： 电镀装置可以牢固地进行基板的平坦化镀以形成具有平坦表面的镀膜而不使用昂贵的机构，并且不对基板施加额外的电镀。 电镀装置包括：基板支架; 具有用于水密密封基板的周边部分的密封部件的阴极部分和用于向基板供给电流的阴极电极; 设置在面向所述基板的表面的位置的阳极; 设置在所述阳极和所述基板的表面之间的多孔构件; 恒定电压控制部分，用于以恒定值控制在所述阴极和所述阳极之间施加的电压; 以及电流监视部分，用于监视在阴极和阳极之间流动的电流，并将检测信号反馈到恒压控制部分。

公开(公告)号：US07736474B2

公开(公告)日：2010-06-15

申请号：US11245490

申请日：2005-10-07

申请人： Keiichi Kurashina ,  Mizuki Nagai ,  Satoru Yamamoto ,  Hiroyuki Kanda ,  Koji Mishima ,  Shinya Morisawa ,  Junji Kunisawa ,  Kunihito Ide ,  Hidenao Suzuki ,  Emanuel Cooper ,  Philippe Vereecken ,  Brett Baker-O'Neal ,  Hariklia Deligianni

发明人： Keiichi Kurashina ,  Mizuki Nagai ,  Satoru Yamamoto ,  Hiroyuki Kanda ,  Koji Mishima ,  Shinya Morisawa ,  Junji Kunisawa ,  Kunihito Ide ,  Hidenao Suzuki ,  Emanuel Cooper ,  Philippe Vereecken ,  Brett Baker-O'Neal ,  Hariklia Deligianni

IPC分类号： C25D17/00 ,  C25D7/12

CPC分类号： C25D5/22 ,  C25D5/18 ,  C25D7/123 ,  C25D17/001 ,  C25D17/002 ,  C25D17/004 ,  C25D17/005 ,  C25D17/12 ,  C25D21/12 ,  H01L21/2885 ,  H01L21/7684 ,  H01L21/76849 ,  H01L21/76877

摘要： A plating apparatus securely carries out a flattening plating of a substrate to form a plated film having a flat surface without using a costly mechanism, and without applying an extra plating to the substrate. The plating apparatus includes a substrate holder; a cathode section having a seal member for watertightly sealing a peripheral portion of the substrate, and a cathode electrode for supplying an electric current to the substrate; an anode disposed in a position facing the surface of the substrate; a porous member disposed between the anode and the surface of the substrate; a constant-voltage control section for controlling a voltage applied between the cathode electrode and the anode at a constant value; and a current monitor section for monitoring an electric current flowing between the cathode electrode and the anode, and feeding back a detection signal to the constant-voltage control section.

摘要翻译： 电镀装置可以牢固地进行基板的平坦化镀以形成具有平坦表面的镀膜而不使用昂贵的机构，并且不对基板施加额外的电镀。 电镀装置包括：基板支架; 具有用于水密密封基板的周边部分的密封部件的阴极部分和用于向基板供给电流的阴极电极; 设置在面向所述基板的表面的位置的阳极; 设置在所述阳极和所述基板的表面之间的多孔构件; 恒定电压控制部分，用于以恒定值控制在所述阴极和所述阳极之间施加的电压; 以及电流监视部分，用于监视在阴极和阳极之间流动的电流，并将检测信号反馈到恒压控制部分。

公开(公告)号：US20050241946A1

公开(公告)日：2005-11-03

申请号：US11016924

申请日：2004-12-21

申请人： Mizuki Nagai ,  Hiroyuki Kanda ,  Keiichi Kurashina ,  Satoru Yamamoto ,  Ryoichi Kimizuka ,  Hariklia Deligianni ,  Brett Baker ,  Keith Kwietniak ,  Panayotis Andricacos ,  Philippe Vereecken

发明人： Mizuki Nagai ,  Hiroyuki Kanda ,  Keiichi Kurashina ,  Satoru Yamamoto ,  Ryoichi Kimizuka ,  Hariklia Deligianni ,  Brett Baker ,  Keith Kwietniak ,  Panayotis Andricacos ,  Philippe Vereecken

IPC分类号： C25D3/38 ,  C25D5/00 ,  C25D5/02 ,  C25D5/08 ,  C25D5/18 ,  C25D7/12 ,  C25D17/00 ,  H01L21/288 ,  H01L21/768

CPC分类号： C25D3/38 ,  C25D5/02 ,  C25D5/18 ,  C25D7/123 ,  C25D17/001 ,  C25D17/007 ,  C25D17/008 ,  H01L21/2885 ,  H01L21/76877

摘要： A plating method is capable of mechanically and electrochemically preferentially depositing a plated film in fine interconnect recesses such as trenches and via holes, and depositing the plated film to a flatter surface. The plating method including: disposing a substrate having fine interconnect recesses such that a conductive layer faces an anode; disposing a porous member between the substrate and the anode; filling a plating solution between the substrate and the anode; and repeating a process of holding the conductive layer and the porous member in contact with each other and moving the conductive layer and the porous member relatively to each other, a process of passing an electric current between the conductive layer and the anode while keeping the conductive layer still with respect to the porous member, and a process of stopping the supply of the electric current between the conductive layer and the anode.

摘要翻译： 电镀方法能够机械地和电化学地优先在诸如沟槽和通孔的精细互连凹槽中沉积镀膜，并将镀膜沉积到更平坦的表面上。 电镀方法包括：设置具有导电层面向阳极的细微互连凹槽的衬底; 在基板和阳极之间设置多孔构件; 在基板和阳极之间填充电镀液; 并且重复保持导电层和多孔构件彼此接触并相对于彼此移动导电层和多孔构件的过程，使导电层和阳极之间的电流通过，同时保持导电 相对于多孔构件的静止层，以及停止在导电层和阳极之间的电流的供给的处理。