公开(公告)号：US20050179140A1

公开(公告)日：2005-08-18

申请号：US11106929

申请日：2005-04-14

申请人： Michael Goodner ,  Jihperng Leu

发明人： Michael Goodner ,  Jihperng Leu

IPC分类号： H01L21/311 ,  H01L21/312 ,  H01L21/316 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L29/40

CPC分类号： H01L21/02126 ,  H01L21/02118 ,  H01L21/0212 ,  H01L21/022 ,  H01L21/02203 ,  H01L21/0234 ,  H01L21/02343 ,  H01L21/02362 ,  H01L21/31133 ,  H01L21/312 ,  H01L21/3124 ,  H01L21/3127 ,  H01L21/31695 ,  H01L21/7682 ,  H01L21/76834 ,  H01L23/5222 ,  H01L23/5329 ,  H01L2221/1047 ,  H01L2924/0002 ,  H01L2924/00

摘要： An inter-layer dielectric structure and method of making such structure are disclosed. A composite dielectric layer comprising a porous matrix, as well as a porogen in certain variations, is formed adjacent a sacrificial dielectric layer. Subsequent to other processing treatments, a portion of the sacrificial dielectric layer is decomposed and removed through a portion of the porous matrix using supercritical carbon dioxide leaving voids in positions previously occupied by portions of the sacrificial dielectric layer. The resultant structure has a desirably low k value as a result of the voids and materials comprising the porous matrix and other structures. The composite dielectric layer may be used in concert with other dielectric layers of varying porosity, dimensions, and material properties to provide varied mechanical and electrical performance profiles.

摘要翻译： 公开了一种层间电介质结构及其制造方法。 在牺牲电介质层附近形成包括多孔基体的复合介电层以及某些变体中的致孔剂。 在其它处理处理之后，通过使用超临界二氧化碳的一部分多孔基质将一部分牺牲介电层分解和除去，在牺牲介电层的部分先前占据的位置留下空隙。 所得结构由于包含多孔基体和其它结构的空隙和材料而具有期望的低k值。 复合介电层可以与具有不同孔隙率，尺寸和材料性质的其它电介质层一起使用，以提供不同的机械和电气性能轮廓。

公开(公告)号：US20050287787A1

公开(公告)日：2005-12-29

申请号：US10880632

申请日：2004-06-29

申请人： Grant Kloster ,  Jihperng Leu ,  Michael Goodner ,  Michael Haverty ,  Sadasivan Shankar

发明人： Grant Kloster ,  Jihperng Leu ,  Michael Goodner ,  Michael Haverty ,  Sadasivan Shankar

IPC分类号： H01L21/316 ,  H01L21/768 ,  H01L21/4763 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L21/02178 ,  H01L21/02203 ,  H01L21/02274 ,  H01L21/02362 ,  H01L21/31695 ,  H01L21/76807 ,  H01L21/7682 ,  H01L2221/1047

摘要： A method for selecting and forming a low-k, relatively high E porous ceramic film in a semiconductor device is described. A ceramic material is selected having a relatively high Young's modulus and relatively lower dielectric constant. The k is reduced by making the film porous.

摘要翻译： 描述了在半导体器件中选择和形成低k，较高E多孔陶瓷膜的方法。 选择具有相对高的杨氏模量和相对较低的介电常数的陶瓷材料。 通过使膜多孔化来减小k。

公开(公告)号：US20060255432A1

公开(公告)日：2006-11-16

申请号：US11485078

申请日：2006-07-12

申请人： Robert Meagley ,  Kevin O'Brien ,  Tian-An Chen ,  Michael Goodner ,  James Powers ,  Huey-Chiang Liou

发明人： Robert Meagley ,  Kevin O'Brien ,  Tian-An Chen ,  Michael Goodner ,  James Powers ,  Huey-Chiang Liou

IPC分类号： H01L23/58

CPC分类号： H01L23/5222 ,  H01L21/02118 ,  H01L21/02134 ,  H01L21/02137 ,  H01L21/02164 ,  H01L21/0234 ,  H01L21/02351 ,  H01L21/312 ,  H01L21/76224 ,  H01L21/7682 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76829 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor structure may be covered with a thermally decomposing film. That film may then be covered by a sealing cover. Subsequently, the thermally decomposing material may be decomposed, forming a cavity.

公开(公告)号：US20060068318A1

公开(公告)日：2006-03-30

申请号：US10956284

申请日：2004-09-30

申请人： Robert Meagley ,  Michael Goodner ,  Bob Leet ,  Michael McSwiney

发明人： Robert Meagley ,  Michael Goodner ,  Bob Leet ,  Michael McSwiney

IPC分类号： G03C1/76

CPC分类号： G03F7/0382 ,  G03F7/0392 ,  Y10S430/114 ,  Y10S430/115

摘要： A deliberately engineered placement and size constraint (molecular weight distribution) of photoacid generators, solubility switches, photoimageable species, and quenchers forms individual pixels within a photoresist. Upon irradiation, a self-contained reaction occurs within each of the individual pixels that were irradiated to pattern the photoresist. These pixels may take on a variety of forms including a polymer chain, a bulky cluster, a micelle, or a micelle formed of several polymer chains. Furthermore, these pixels may be designed to self-assemble onto the substrate on which the photoresist is applied.

摘要翻译： 光致酸产生剂，溶解度开关，可光成象物质和猝灭剂的故意设计的放置和尺寸约束（分子量分布）在光致抗蚀剂内形成各个像素。 在照射时，在被照射以对光致抗蚀剂进行图案化的各个像素内发生独立的反应。 这些像素可以具有各种形式，包括由几个聚合物链形成的聚合物链，大体积聚集体，胶束或胶束。 此外，这些像素可以被设计为自组装到其上施加光致抗蚀剂的基板上。

公开(公告)号：US20060057506A1

公开(公告)日：2006-03-16

申请号：US11272316

申请日：2005-11-10

申请人： Michael Goodner ,  Robert Meagley ,  Michael Leeson

发明人： Michael Goodner ,  Robert Meagley ,  Michael Leeson

IPC分类号： G03C5/00

CPC分类号： G03F7/11 ,  G03F7/09 ,  G03F7/091 ,  G03F7/095

摘要： Photoresists may be formed over a structure that has been modified so as to poison a lower layer of the photoresist. Then, when the photoresist is patterned, it is only patterned down to the poisoned layer. The poisoned layer may be removed subsequently. However, because of the use of the modification process, the critical dimensions of the photoresist may be improved in some embodiments.

公开(公告)号：US20060003253A1

公开(公告)日：2006-01-05

申请号：US10881475

申请日：2004-06-30

申请人： Robert Meagley ,  Michael Goodner ,  Robert Leet ,  Michael McSwiney

发明人： Robert Meagley ,  Michael Goodner ,  Robert Leet ,  Michael McSwiney

IPC分类号： G03C1/492

CPC分类号： G03F7/0045 ,  Y10S430/106 ,  Y10S430/108 ,  Y10S430/115 ,  Y10S430/122 ,  Y10S430/126

摘要： A composition including a first moiety; and a different second moiety capable of harvesting energy from an external source, wherein the second moiety is positioned such that energy harvested at the second moiety may be transferred to the first moiety. An article of manufacture including a film including a first moiety and a different second moiety capable of harvesting energy from an external source, wherein the second moiety is positioned such that collectively the first and second moieties have an electron capture cross-section greater than the electron capture cross-section of the first moiety alone. A method including forming a film on a substrate including a first moiety and a different second moiety; exposing the film to photonic or charged particle radiation; and patterning the film.

摘要翻译： 包含第一部分的组合物; 以及能够从外部源收获能量的不同的第二部分，其中第二部分被定位成使得在第二部分收获的能量可以转移到第一部分。 包括包括第一部分和能够从外部源收集能量的不同第二部分的膜的制品，其中所述第二部分被定位成使得所述第一部分和所述第二部分的电子捕获截面大于所述电子 仅捕获第一部分的横截面。 一种方法，包括在包括第一部分和不同的第二部分的基底上形成膜; 将膜暴露于光子或带电粒子辐射; 并构图。

公开(公告)号：US20050129926A1

公开(公告)日：2005-06-16

申请号：US10735122

申请日：2003-12-12

申请人： Grant Kloster ,  Robert Meagley ,  Michael Goodner ,  Kevin O'brien

发明人： Grant Kloster ,  Robert Meagley ,  Michael Goodner ,  Kevin O'brien

IPC分类号： B32B3/26 ,  B32B9/04

CPC分类号： B32B3/26 ,  B32B2310/12 ,  B32B2457/00 ,  H01L21/76814 ,  Y10T428/249953 ,  Y10T428/249978 ,  Y10T428/249993 ,  Y10T428/31663

摘要： Method and structure for minimizing the downsides associated with microelectronic device processing adjacent porous dielectric materials are disclosed. In particular, chemical protocols are disclosed wherein porous dielectric materials may be sealed by attaching coupling agents to the surfaces of pores. The coupling agents may form all or part of caps on reactive groups in the dielectric surface or may crosslink to seal pores in the dielectric.

摘要翻译： 公开了用于最小化与邻近多孔电介质材料的微电子器件处理有关的缺点的方法和结构。 特别地，公开了化学方案，其中可以通过将偶联剂附着到孔的表面来密封多孔介电材料。 偶联剂可以在电介质表面中的反应性基团上形成全部或部分盖，或者可以交联以密封电介质中的孔。

公开(公告)号：US20050106886A1

公开(公告)日：2005-05-19

申请号：US10715956

申请日：2003-11-17

申请人： Michael Goodner ,  Robert Meagley ,  Kevin O'Brien

发明人： Michael Goodner ,  Robert Meagley ,  Kevin O'Brien

IPC分类号： H01L21/311 ,  H01L21/768 ,  H01L21/4763 ,  H01L21/302 ,  H01L21/461

CPC分类号： H01L21/76808 ,  H01L21/31144 ,  H01L21/76802

摘要： Several techniques are described for modulating the etch rate of a sacrificial light absorbing material (SLAM) by altering its composition so that it matches the etch rate of a surrounding dielectric. This is particularly useful in a dual damascene process where the SLAM fills a via opening and is etched along with a surrounding dielectric material to form trenches overlying the via opening.

摘要翻译： 描述了几种用于通过改变其组成以使其与周围电介质的蚀刻速率相匹配来调节牺牲光吸收材料（SLAM）的蚀刻速率的技术。 这在双镶嵌工艺中特别有用，其中SLAM填充通孔开口并与周围的电介质材料一起蚀刻以形成覆盖通孔开口的沟槽。

公开(公告)号：US20050025885A1

公开(公告)日：2005-02-03

申请号：US10631627

申请日：2003-07-30

申请人： Michael McSwiney ,  Michael Goodner

发明人： Michael McSwiney ,  Michael Goodner

IPC分类号： C23C16/34 ,  C23C16/00

CPC分类号： C23C16/345

摘要： A method including combining a silicon source precursor and a nitrogen source precursor at a temperature up to 550° C.; and forming a silicon nitride film. A system including a chamber; a silicon precursor source coupled to the chamber; a controller configured to control the introduction into the chamber of a silicon precursor from the silicon precursor source; and a memory coupled to the controller comprising a machine-readable medium having a machine-readable program embodied therein for directing operation of the system, the machine-readable program including instructions for controlling the second precursor source to introduce an effective amount of silicon precursor into the chamber at a temperature up to 550° C.

摘要翻译： 一种方法，包括在高达550℃的温度下组合硅源前体和氮源前体; 并形成氮化硅膜。 包括室的系统 耦合到所述室的硅前体源; 控制器，被配置为控制从所述硅前体源引入所述室中的硅前体; 以及耦合到控制器的存储器，包括机器可读介质，其具有体现在其中的机器可读程序，用于引导系统的操作，该机器可读程序包括用于控制第二前驱源的指令，以将有效量的硅前体引入 该室温度高达550°C

公开(公告)号：US20070032675A1

公开(公告)日：2007-02-08

申请号：US11580399

申请日：2006-10-13

申请人： Robert Meagley ,  Michael Goodner ,  Andrew Ott ,  Grant Kloster ,  Michael McSwiney ,  Bob Leet

发明人： Robert Meagley ,  Michael Goodner ,  Andrew Ott ,  Grant Kloster ,  Michael McSwiney ,  Bob Leet

IPC分类号： C04B41/50 ,  C07F7/02

CPC分类号： H01L21/02126 ,  C23C16/401 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/3122 ,  H01L21/31633

摘要： In one embodiment, the present invention includes introducing a precursor containing hydrocarbon substituents and optionally a second conventional or hydrocarbon-containing precursor into a vapor deposition apparatus; and forming a dielectric layer having the hydrocarbon substituents on a substrate within the vapor deposition apparatus from the precursor(s). In certain embodiments, at least a portion of the hydrocarbon substituents may be later removed from the dielectric layer to reduce density thereof.

摘要翻译： 在一个实施方案中，本发明包括将含有烃取代基的前体和任选的第二常规或含烃前体引入气相沉积设备中; 以及在所述气相沉积设备内的所述前体上形成具有所述烃取代基的介电层。 在某些实施方案中，至少一部分烃取代基可以稍后从介电层去除以降低其密度。